TO-220 FP wide creepage

AM15572v1_no_tab

D(2)

G(1)

S(3)

FeaturesOrder code VDS @TJmax RDS(on) max. ID

STFH18N60M2 650 V 0.280 Ω 13 A

• Extremely low gate charge• Excellent output capacitance (COSS) profile• 100% avalanche tested• Zener-protected• Wide distance of 4.25 mm between the pins

Applications• Switching applications• LCC converters• Resonant converters

DescriptionThis device is an N-channel Power MOSFET developed using MDmesh M2technology. Thanks to its strip layout and an improved vertical structure, the deviceexhibits low on-resistance and optimized switching characteristics, rendering itsuitable for the most demanding high efficiency converters.

The TO-220FP wide creepage package provides increased surface insulation forPower MOSFETs to prevent failure due to arcing, which can occur in pollutedenvironments.

Product status link

STFH18N60M2

Product summary

Order code STFH18N60M2

Marking 18N60M2

Package TO-220FP widecreepage

Packing Tube

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package

STFH18N60M2

Datasheet

DS11693 - Rev 3 - June 2019For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate-source voltage ±25 V

ID (1)Drain current (continuous) at TC = 25 °C 13 A

Drain current (continuous) at TC = 100 °C 8 A

IDM (2) Drain current (pulsed) 52 A

PTOT Total power dissipation at TC = 25 °C 25 W

dv/dt (3) Peak diode recovery voltage slope 15 V/ns

dv/dt (4) MOSFET dv/dt ruggedness 50 V/ns

VISOInsulation withstand voltage (RMS) from all three leads to external heatsink (t = 1 s; TC = 25 °C) 2.5 kV

Tstg Storage temperature range-55 to 150 °C

Tj Operating junction temperature range

1. Limited by maximum junction temperature.2. Pulse width limited by safe operating area.3. ISD ≤ 13 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V

4. VDS ≤ 480 V

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 5 °C/W

Rthj-amb Thermal resistance junction-ambient 62.5 °C/W

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

IARAvalanche current, repetitive or not repetitive (pulse width limited byTjmax)

3 A

EAS Single pulse avalanche energy (starting Tj=25 °C, ID= IAR, VDD=50 V) 135 mJ

STFH18N60M2Electrical ratings

DS11693 - Rev 3 page 2/12

2 Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdownvoltage ID = 1 mA, VGS = 0 V 600 V

IDSSZero gate voltage

drain current

VGS = 0 V, VDS = 600 V 1 µA

VGS = 0 V, VDS = 600 V,TC = 125 °C (1) 100 µA

IGSSGate-body leakage

currentVDS = 0 V, VGS = ± 25 V ±10 µA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V

RDS(on)Static drain-source

on-resistanceVGS = 10 V, ID = 6.5 A 0.255 0.280 Ω

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitanceVDS = 100 V, f = 1 MHz,

VGS = 0 V

- 791 - pF

Coss Output capacitance - 40 - pF

Crss Reverse transfer capacitance - 1.3 - pF

Coss eq. (1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 164.5 - pF

RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 5.6 - Ω

Qg Total gate charge VDD = 480 V, ID = 13 A,

VGS = 0 to 10 V (seeFigure 14. Test circuit for gatecharge behavior)

- 21.5 - nC

Qgs Gate-source charge - 3.2 - nC

Qgd Gate-drain charge - 11.3 - nC

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0to 80% VDSS.

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 300 V, ID = 6.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13. Test circuit forresistive load switching timesand Figure 18. Switching timewaveform)

- 12 - ns

tr Rise time - 9 - ns

td(off) Turn-off delay time - 47 - ns

tf Fall time - 10.6 - ns

STFH18N60M2Electrical characteristics

DS11693 - Rev 3 page 3/12

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 13 A

ISDM (1) Source-drain current (pulsed) - 52 A

VSD (2) Forward on voltage ISD = 13 A, VGS = 0 V - 1.6 V

trr Reverse recovery time ISD = 13 A, di/dt = 100 A/µs

VDD = 60 V (seeFigure 15. Test circuit forinductive load switching anddiode recovery times)

- 305 ns

Qrr Reverse recovery charge - 3.3 µC

IRRM Reverse recovery current - 22 A

trr Reverse recovery time ISD = 13 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 15. Test circuit forinductive load switching anddiode recovery times)

- 417 ns

Qrr Reverse recovery charge - 4.6 µC

IRRM Reverse recovery current - 22 A

1. Pulse width limited by safe operating area.2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

STFH18N60M2Electrical characteristics

DS11693 - Rev 3 page 4/12

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area

ID

1

0.1

0.010.1 1 100 VDS(V)10

(A)

Operati

on in

this a

rea is

Limite

d by m

ax RDS(on

)

10µs

100µs

1ms10msTj=150°C

Tc=25°CSinglepulse

10

AM15834v1

Figure 2. Thermal impedance

GC20940

10 -1

10 -2

10 -310 -4 10 -3 10 -2 10 -1 10 0

K

t p (s)

Figure 3. Output characteristics

ID

15

10

5

00 10 VDS(V)

(A)

5 15

20

4V

5V

6V

VGS=7, 8, 9, 10V

20

25

30

AM15837v1

Figure 4. Transfer characteristics

ID

10

00 4 VGS(V)8

(A)

2 6

20

30VDS=18V

10

5

15

25

AM15838v1

Figure 5. Gate charge vs gate-source voltage

VDS

VGS

6

4

2

00 Qg(nC)

(V)

5

8

10

VDD=480V

300

200

100

0

400

VDS

10

500

VDS(V)

ID=13A

15 20 25

12

AM15839v1

Figure 6. Static drain-source on-resistance

RDS(on)

0.260

0.255

0.250

0.2450 2 ID(A)

(Ω)

0.265

4

VGS=10V0.270

6 8 10 12

AM15840v1

STFH18N60M2Electrical characteristics (curves)

DS11693 - Rev 3 page 5/12

Figure 7. Capacitance variations

C

100

10

10.1 10 VDS(V)

(pF)

1 100

Ciss

Coss

Crss

1000

AM15841v1

Figure 8. Normalized gate threshold voltage vs.temperature

GIPG070815BQ6KLVTH

1.1

1.0

0.9

0.8

0.7

0.6-75 -25 25 75 125

V GS(th) (norm.)

T j (°C)

I D = 250 µA

Figure 9. Normalized on-resistance vs temperature

GIPG070815BQ6KLRON

2.4

2.0

1.6

1.2

0.8

0.4

0.0-75 -25 25 75 125

RDS(on) (norm.)

Tj (°C)

VGS = 10 V

Figure 10. Source-drain diode forward characteristics

VSD

0 2 ISD(A)

(V)

40.0

0.2

0.4

0.6

TJ=-50°C

TJ=150°C TJ=25°C

0.8

6

1.0

1.2

1.4

8 10 12

AM15842v1

Figure 11. Normalized V(BR)DSS vs temperature

GIPG070815BQ6KLBDV

1.12

1.08

1.04

1.00

0.96

0.92

0.88-75 -25 25 75 125

V (BR)DSS (norm.)

T j (°C)

I D = 1 mA

Figure 12. Output capacitance stored energy

Eoss

0 VDS(V)

(µJ)

200100 5000

1

2

3

300 400 600

4

5

6

AM15843v1

STFH18N60M2Electrical characteristics (curves)

DS11693 - Rev 3 page 6/12

3 Test circuits

Figure 13. Test circuit for resistive load switching times

AM01468v1

VD

RG

RL

D.U.T.

2200μF VDD

3.3μF+

pulse width

VGS

Figure 14. Test circuit for gate charge behavior

AM01469v1

47 kΩ1 kΩ

47 kΩ

2.7 kΩ

1 kΩ

12 V

IG= CONST100 Ω

100 nF

D.U.T.

+pulse width

VGS

2200μF

VG

VDD

Figure 15. Test circuit for inductive load switching anddiode recovery times

AM01470v1

AD

D.U.T.S

B

G

25 Ω

A A

B B

RG

GD

S

100 µH

µF3.3 1000

µF VDD

D.U.T.

+

_

+

fastdiode

Figure 16. Unclamped inductive load test circuit

AM01471v1

VD

ID

D.U.T.

L

VDD+

pulse width

Vi

3.3µF

2200µF

Figure 17. Unclamped inductive waveform

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

Figure 18. Switching time waveform

AM01473v1

0

VGS 90%

VDS

90%

10%

90%

10%

10%

ton

td(on) tr

0

toff

td(off) tf

STFH18N60M2Test circuits

DS11693 - Rev 3 page 7/12

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220FP wide creepage package information

Figure 19. TO-220FP wide creepage package outline

DM00260252_1

STFH18N60M2Package information

DS11693 - Rev 3 page 8/12

Table 8. TO-220FP wide creepage package mechanical data

Dim.mm

Min. Typ. Max.

A 4.60 4.70 4.80

B 2.50 2.60 2.70

D 2.49 2.59 2.69

E 0.46 0.59

F 0.76 0.89

F1 0.96 1.25

F2 1.11 1.40

G 8.40 8.50 8.60

G1 4.15 4.25 4.35

H 10.90 11.00 11.10

L2 15.25 15.40 15.55

L3 28.70 29.00 29.30

L4 10.00 10.20 10.40

L5 2.55 2.70 2.85

L6 16.00 16.10 16.20

L7 9.05 9.15 9.25

Dia 3.00 3.10 3.20

STFH18N60M2TO-220FP wide creepage package information

DS11693 - Rev 3 page 9/12

Revision history

Table 9. Document revision history

Date Revision Changes

08-Jun-2016 1 First release.

16-Jun-2016 2Document status promoted from preliminary data to production data.

Minor text changes.

06-Jun-2019 3

Modified Figure 8. Normalized gate threshold voltage vs. temperature,Figure 9. Normalized on-resistance vs temperature and Figure 11. NormalizedV(BR)DSS vs temperature.

Minor text changes.

STFH18N60M2

DS11693 - Rev 3 page 10/12

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

4.1 TO-220FP wide creepage package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

STFH18N60M2Contents

DS11693 - Rev 3 page 11/12

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© 2019 STMicroelectronics – All rights reserved

STFH18N60M2

DS11693 - Rev 3 page 12/12