Chapter 4: p-n Junctions -...
Transcript of Chapter 4: p-n Junctions -...
Chapter 4: p-n Junctions 4.2. Structure and principle of operation
2
lni
adti
n
NNV=φ
(4.2.1)
ai V−= φφ (4.2.2)
4.3. Electrostatic analysis of a p-n diode
)(2
2−+ −+−−=−= ad
ssNNnp
q
dx
dεε
ρφ
(4.3.1)
)sinh(sinh
22
2
t
F
t
F
s
iVV
nq
dx
d φφφε
φ+
−=
(4.3.2)
i
da
t
Fn
NN
V 2sinh
+− −=
φ
(4.3.3)
pnd xxx += (4.3.4)
npadad xxxNNqNNnpq ≤≤−−≅−+−= −+−+ for ,)()(ρ (4.3.5)
0)(
)(
)(
0)(
=
=
−=
=
x
qNx
qNx
x
d
a
ρ
ρ
ρ
ρ
xx
xx
xx
xx
n
n
p
p
≤
≤≤
≤≤−
−≤
for ,
0for ,
0for ,
for ,
(4.3.6)
ndn xqNQ = (4.3.7)
pap xqNQ −= (4.3.8)
npad
ssxxxxNxN
qxdx
(x)d≤≤−−≅= −+ for ,))()((
)(εε
ρE
(4.3.9)
0)(
)()(
)()(
0)(
=
−=
+−=
=
x
xxqNx
xxqNx
x
s
nd
s
pa
E
E
E
E
ε
ε
xx
xx
xx
xx
n
n
p
p
≤
≤≤
≤≤−
−≤
for ,
0for ,
0for ,
for ,
(4.3.10)
s
nd
s
pa xNqxNqx
εε−=−== )0(E
(4.3.11)
pand xNxN = (4.3.12)
da
adn NN
Nxx
+=
(4.3.13)
da
ddp NN
Nxx
+=
(4.3.14)
(x)
dxxd E−=
)(φ
(4.3.15)
s
pa
s
ndai
xNqxNqV
εεφ
22
22
+=− (4.3.16)
))(
11(
2ai
da
sd V
NNqx −+= φ
ε
(4.3.17)
)(
12ai
dad
asn V
NNNN
qx −
+= φ
ε
(4.3.18)
)(
12ai
daa
dsp V
NNNN
qx −
+= φ
ε
(4.3.19)
a
aa dV
VdQVC
)()(
∆
= (4.3.20)
da
da
ai
sj NN
NNV
qC
+−=
)(2 φε
(4.3.21)
d
sj x
Cε
= (4.3.22)
)(
212 ai
da
da
sjV
NNNN
qC−
+= φ
ε
(4.3.23)
da
da
sa
j
NNNN
qdV
Cd +−=
ε2)/1( 2
(4.3.24)
da
a
jsd NN
dV
CdqN >>−= if ,
)/1(
122ε
(4.3.25)
4.4. The p-n diode current ta VV
nnn epxxp /0)( == (4.4.1)
ta VVppp enxxn /
0)( =−= (4.4.2)
0)( nnn pwxp == (4.4.3)
0)( ppp nwxn =−= (4.4.4)
pnpn LxxLxxnnn eBeApxxp
/)(/)(0)(
−−−++=≥ (2.9.13)
pppp LxxLxxppp eDeCnxxn /)(/)(
0)( ++− ++=−≤ (2.9.14)
p
n
p
nnnn L
xxB
Lxx
Apxxp−
+−
+=≥ sinhcosh)( **0
(4.4.5)
n
p
n
pppp L
xxD
L
xxCnxxn
++
++=−≤ sinhcosh)( **
0 (4.4.6)
]sinhcothcosh)[1()(
'/
00p
n
p
n
p
nVVnnnn L
xxLw
Lxx
eppxxp ta−
−−
−+=≥ (4.4.7)
]sinhcothcosh)[1()(
'/
00n
p
n
p
n
pVVpppp L
xx
L
w
L
xxennxxn ta
++
+−+=−≤
(4.4.8)
nnn xww −=' (4.4.9)
ppp xww −=' (4.4.10)
]coshcothsinh)[1(
)(
'/0
p
n
p
n
p
nVV
p
np
pnp
Lxx
Lw
Lxx
eL
pqDdxdp
qDxxJ
ta−
−−
−−=
−=≥
(4.4.11)
]coshcoth)[sinh1(
)(
'/0
n
p
n
p
n
pVV
n
pn
npn
L
xx
L
w
L
xxe
L
nqDdxdn
qDxxJ
ta+
++
−=
=−≤
(4.4.12)
)1(])()([ / −≅+=+−== ta VVsrnppn eIJxxJxxJAI (4.4.13)
)]coth()coth([
'0'
0
p
n
p
np
n
p
n
pns L
wL
pD
L
w
L
nDAqI +=
(4.4.14)
1for ,
1tanh
1coth <<≅= x
xxx
(4.4.15)
p
nVVnnnn L
xxeppxxp ta
)(exp)1()( /
00−−
−+=≥ (4.4.16)
n
pVVpppp L
xxennxxn ta
+−+=−≤ exp)1()( /
00 (4.4.17)
p
nVV
p
npnp L
xxe
L
pqDxxJ ta
)(exp)1()( /0 −−
−=≥ (4.4.18)
n
pVV
n
pnpn L
xxe
L
nqDxxJ ta
+−=−≤ exp)1()( /0
(4.4.19)
][][ 0000
p
pn
n
np
p
np
n
pns
LpLnAq
L
pD
L
nDAqI
ττ+=+=
(4.4.20)
)1( /0 −≥ ta VV
p
nnr e
xpAqI
τ
(4.4.21)
pn Lx << (4.4.22)
2
2
2
20 and ,0
dx
pdD
dx
ndD n
pp
n == (4.4.23)
DxCpBxAn np +=+= and , (4.4.24)
−−−+= '
/00 1)1e(
n
nVVnnn
w
xxppp ta
(4.4.25)
++−+= '
/00 1)1e(
p
pVVppp w
xxnnn ta
(4.4.26)
)1(])()([ / −≅+=+−== ta VVsrnppn eIJxxJxxJAI (4.4.27)
][ '
0'
0
n
np
p
pns
w
pD
w
nDAqI +=
(4.4.28)
∫
−−− =
n
p
x
xbbbb dxUqJ
(4.4.29)
)( 2ibb nnpbU −=− (4.4.30)
taFpiiFn VVi
kTEEi
kTEEi enenenpn /2/)(/)( == −− (4.4.31)
)1()1( /2/2 −=−= ∫
−− ta
n
p
ta VVdi
x
x
VVibb exbnqdxenqJ
(4.4.32)
∫=
−
n
p
x
xSHRSHR dxUqJ
(4.4.33)
∫ −
++
−=
−
n
p
tax
x iti
VVi
SHR dx
kTEE
npn
enqJ
)cosh(2
)1(1 /2
τ
(4.4.34)
tapiin VVi
kTFEi
kTEFi enenenpn /2/)(/)( == −− (4.4.35)
)1(
2)
)cosh(2
)1(1( MAX 2/
/2
max, −≅−
++
−= ta
ta VVi
iti
VVi
SHR en
kTEE
npn
enU
ττ
(4.4.36)
max,
/2
)cosh(2
)1(1
SHR
x
x iti
VVi
U
dx
kTEE
npn
en
x
n
p
ta
∫ −++
−
=′− τ
(4.4.37)
)1(
22/
'−= ta VVi
SHR exqn
Jτ
(4.4.38)
ta VVs eJJ η/= (4.4.39)
mV/decade 59.6slope
1
slope )elog(
==tV
η
(4.4.40)
i
dta n
NVV ln2=
(4.4.41)
saa IRVV +=* (4.4.42)
adVQd
C∆
= (4.4.43)
∫ −=∆n
n
w
xnnp dxppqAQ )( 0
(4.4.44)
p
VVpsp
VVnp tata ILpAqQ τ)1e()1e( /
,/
0 −=−=∆ (4.4.45)
p
pnps L
DpAqI 0
, = (4.4.46)
t
pVV
ps
a
pVV
pspd V
I
dV
IdC
tata ττ /,
/,
,e))1e((
=−
= (4.4.47)
t
prVV
pspd V
tIC
ta ,/
,,
e=
(4.4.48)
p
ppr D
wt
2
2'
, =
(4.4.49)
4.5. Reverse bias breakdown
V/cm )10/log(1
10416
31
5
N
xbr
−=E
(4.5.1)
qNV sbr
ibr 2
2εφ
E+−=
(4.5.2)
qNx sbr
brd
εE=,
(4.5.3)
dxndn nα= (4.5.4)
∫−
=2
1
1
1x
xdx
M
α
(4.5.5)
6 2 where,
1
1<<
−
= n
VV
Mn
br
a
(4.5.6)
−=Θ
E
2/3*234
exp gE
qmh
(4.5.7)
Θ= nvqJ Rn (4.5.8)
4.6. Optoelectronic devices
phVV
s III ta −−= )1e( / (4.6.1)
inph P
hq
Iν
=max, (4.6.2)
να
hqP
RI indph )e1)(1( −−−=
(4.6.3)
fIqi ∆>=< 22 (4.6.4)
ocsc
mmVIVI
=Factor Fill (4.6.5)
1e ion amplificat Roundtrip 212 == RRgL (4.6.6)
21
1ln
21
RRLg =
(4.6.7)
)( thout II
qh
P −=ν
η (4.6.8)