BUZ 73 - Cornell University Group 1 07/96 BUZ 73 SIPMOS ® Power Transistor • N channel •...

Semiconductor Group 1 07/96

BUZ 73

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1 Pin 2 Pin 3

G D S

Type VDS ID RDS(on ) Package Ordering Code

BUZ 73 200 V 7 A 0.4 Ω TO-220 AB C67078-S1317-A2

Maximum Ratings

Parameter Symbol Values Unit

Continuous drain current

TC = 28 °C

ID 7

A

Pulsed drain current

TC = 25 °C

IDpuls

28

Avalanche current,limited by Tjmax IAR 7

Avalanche energy,periodic limited by Tjmax EAR 6.5 mJ

Avalanche energy, single pulse

ID = 7 A, VDD = 50 V, RGS = 25 Ω

L = 3.67 mH, Tj = 25 °C

EAS

120

Gate source voltage VGS ± 20 V

Power dissipation

TC = 25 °C

Ptot

40

W

Operating temperature Tj -55 ... + 150 °C

Storage temperature Tstg -55 ... + 150

Thermal resistance, chip case RthJC ≤ 3.1 K/W

Thermal resistance, chip to ambient RthJA 75

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 55 / 150 / 56


BUZ 73

Electrical Characteristics, at Tj = 25°C, unless otherwise specified


min. typ. max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

V(BR)DSS

200 - -

V

Gate threshold voltage

VGS=VDS, ID = 1 mA

VGS(th)

2.1 3 4

Zero gate voltage drain current

VDS = 200 V, VGS = 0 V, Tj = 25 °C

VDS = 200 V, VGS = 0 V, Tj = 125 °C

IDSS

-

-

10

0.1

100

1

µA

Gate-source leakage current

VGS = 20 V, VDS = 0 V

IGSS

- 10 100

nA

Drain-Source on-resistance

VGS = 10 V, ID = 4.5 A

RDS(on)

- 0.3 0.4

Ω


BUZ 73



min. typ. max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 4.5 A

gfs

3 4.2 -

S

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Ciss

- 400 530

pF

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss

- 85 130

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Crss

- 45 70

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

td(on)

- 10 15

ns

Rise time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

tr

- 40 60

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

td(off)

- 55 75

Fall time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

tf

- 30 40


BUZ 73



min. typ. max.

Reverse Diode

Inverse diode continuous forward current

TC = 25 °C

IS- - 7

A

Inverse diode direct current,pulsed

TC = 25 °C

ISM

- - 28

Inverse diode forward voltage

VGS = 0 V, IF = 14 A

VSD

- 1.3 1.7

V

Reverse recovery time

VR = 100 V, IF=lS, diF/dt = 100 A/µs

trr- 200 -

ns

Reverse recovery charge

VR = 100 V, IF=lS, diF/dt = 100 A/µs

Qrr

- 0.6 -

µC

5 07/96Semiconductor Group

BUZ 73

Drain current ID = ƒ(TC)

parameter: VGS ≥ 10 V

0 20 40 60 80 100 120 °C 160TC

0.0 0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

A

7.5

ID

Power dissipation Ptot = ƒ(TC)

0 20 40 60 80 100 120 °C 160TC

0

5

10

15

20

25

30

35

W

45

Ptot

Safe operating area ID = ƒ(VDS)

parameter: D = 0.01, TC = 25°C

-1 10

0 10

1 10

2 10

A

ID

10 0 10 1 10 2 V VDS

R DS(on

) =

V DS

/

I D

DC

10 ms

1 ms

100 µs

tp = 22.0µs

Transient thermal impedance Zth JC = ƒ(tp)

parameter: D = tp / T

-3 10

-2 10

-1 10

0 10

1 10

K/W

ZthJC

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp

single pulse 0.01

0.02

0.05

0.10

0.20

D = 0.50


BUZ 73

Typ. output characteristics ID = ƒ(VDS)

parameter: tp = 80 µs

0 2 4 6 8 V 11VDS

0

2

4

6

8

10

12

A

16

ID

VGS [V]

a

a 4.0

b

b 4.5

c

c 5.0

d

d 5.5e

e 6.0

f

f 6.5

g

g 7.0

h

h 7.5

i

i 8.0

j

j 9.0

k

k 10.0

lPtot = 40W

l 20.0

Typ. drain-source on-resistance RDS (on) = ƒ(ID)

parameter: VGS

0 2 4 6 8 10 A 14ID

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

Ω

1.3

RDS (on)

VGS [V] = a4.0

VGS [V] =

a

a4.5

b

b5.0

c

c5.5

d

d6.0

e

e6.5

f

f7.0

g

g7.5

h

h8.0

i

i9.0

j

j10.0

k

k20.0

Typ. transfer characteristics ID = f (VGS)

parameter: tp = 80 µsVDS≥2 x ID x RDS(on)max

0 1 2 3 4 5 6 7 8 V 10VGS

0

1

2

3

4

5

6

7

8

9

10

11

A

13

ID

Typ. forward transconductance gfs = f (ID)parameter: tp = 80 µs,VDS≥2 x ID x RDS(on)max

0 2 4 6 8 A 12ID

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

S

6.0

gfs

7 07/96Semiconductor Group

BUZ 73

Gate threshold voltage VGS (th) = ƒ(Tj)

parameter: VGS = VDS, ID = 1 mA

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

V

4.6

VGS(th)

-60 -20 20 60 100 °C 160Tj

2%

typ

98%

Drain-source on-resistance RDS (on) = ƒ(Tj)

parameter: ID = 4.5 A, VGS = 10 V

-60 -20 20 60 100 °C 160Tj

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Ω

1.9

RDS (on)

typ

98%

Typ. capacitances

C = f (VDS)parameter:VGS = 0V, f = 1MHz

0 5 10 15 20 25 30 V 40VDS

-2 10

-1 10

0 10

1 10

nF

C

Crss

Coss

Ciss

Forward characteristics of reverse diode IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

-1 10

0 10

1 10

2 10

A

IF

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0VSD

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)


BUZ 73

Avalanche energy EAS = ƒ(Tj)

parameter: ID = 7 A, VDD = 50 V

RGS = 25 Ω, L = 3.67 mH

20 40 60 80 100 120 °C 160Tj

0

10

20

30

40

50

60

70

80

90

100

110

mJ

130

EAS

Typ. gate charge VGS = ƒ(QGate)

parameter: ID puls = 14 A

0 4 8 12 16 20 24 28 32 nC 38QGate

0

2

4

6

8

10

12

V

16

VGS

DS maxV0,8 DS max

V0,2

Drain-source breakdown voltage V(BR)DSS = ƒ(Tj)

-60 -20 20 60 100 °C 160Tj

180

185

190

195

200

205

210

215

220

225

230

V

240

V(BR)DSS


BUZ 73

Package OutlinesTO-220 ABDimension in mm

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

http://www.datasheetcatalog.com



BUZ 73 - Cornell University Group 1 07/96 BUZ 73 SIPMOS ® Power Transistor • N channel •...

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