BA

S16HT1G

— Sm

all Signal Diode

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.comBAS16HT1G Rev. A1 1

March 2010

BAS16HT1G Small Signal Diode

Absolute Maximum Ratings * TA = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of the diode may be impaired.

NOTES:1)These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Value UnitsVRRM Maximum Repetitive Reverse Voltage 85 V

IF(AV) Average Rectified Forward Current 200 mA

IFSMNon-repetitive Peak Forward Surge CurrentPulse Width = 1.0 second

600 mA

TSTG Storage Temperature Range -65 to +150 °CTJ Operating Junction Temperature -55 to +150 °C

Symbol Parameter Value UnitsPD Power Dissipation 200 mW

RθJA Thermal Resistance, Junction to Ambient 600 °C/W

Symbol Parameter Test Conditions Min. Max. UnitsVR Breakdown Voltage IR = 5.0μA 85 V

VF Forward Voltage IF = 0.1mAIF = 10mAIF = 50mAIF = 150mA

7158551.0

1.25

mVmVVV

IR Reverse Leakage VR = 75VVR = 25V, TA = 150°CVR = 75V, TA = 150°C

1.03050

μAμAμA

CT Total Capacitance VR = 0, f = 1.0MHz 2.0 pF

trr Reverse Recovery Time IF = IR = 10mA, IRR = 1.0mA, RL = 100Ω

6.0 ns

Connection Diagram

1

22

1

A1

SOD-323

BA

S16HT1G

— Sm

all Signal Diode

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.comBAS16HT1G Rev. A1 2

Typical Performance Characteristics

Figure 1. Reverse Voltage vs Reverse CurrentBV - 1.0 to 100μA

Figure 2. Reverse Current vs Reverse VoltageIR - 10 to 100V

Figure 3. Forward Voltage vs Forward CurrentVF - 1.0 to 100μA

Figure 4. Forward Voltage vs Forward CurrentVF - 0.1 to 10mA

Figure 5. Forward Voltage vs Forward CurrentVF - 10 - 800mA

Figure 6. Total Capacitance

1 2 3 5 10 20 30 50 100110

120

130

140

150

Reverse Current, IR [uA]

R

Ta= 25°C

Rev

erse

Vo

ltag

e, V

R [

v]

Ta= 25°C

GENERAL RULE: The Reverse Current of a diode will approximatelydouble for every ten (10) Degree C increase in Temperature

10 20 30 50 70 1000

50

100

150

200

250

300

Reverse Voltage, VR [v]

Rev

erse

Cur

rent

, IR [n

A]

2251 2 3 5 10 20 30 50 100

250

300

350

400

450

Forward Current, IF [uA]

Fo

rwar

d V

olt

age,

VF [m

V]

F

F

485Ta= 25°C

0.1 0.2 0.3 0.5 1 2 3 5 10450

500

550

600

650

700

Forward Current, IF [mA]

Forw

ard

Vol

tage

, VF

[mV

]F

725 Ta= 25°C

10 20 30 50 100 200 300 5000.6

0.8

1

1.2

1.4

Forward Current, IF [mA]

Forw

ard

Vol

tage

, VF

[V]

F

1.5Ta= 25°C

0 2 4 6 8 10 12 141

1.1

1.2

1.3

Reverse Voltage [V]

Tota

l Cap

acita

nce,

CT

[pF

] Ta= 25°C

15

BA

S16HT1G

— Sm

all Signal Diode

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.comBAS16HT1G Rev. A1 3

Typical Performance Characteristics (Continued)

Figure 1. Reverse Recovery Time vs Reverse CurrentTRR - IR 10mA vs 60mA

Figure 2. Average Rectified Current (IF(AV)) vsAmbient Temperature (TA)

Figure 3. Power Derating Curve

IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms

10 20 30 40 50 601

1.5

2

2.5

3

3.5

4

Reverse Current [mA]

Rev

erse

Rec

ove

ry T

ime,

t rr [n

s] Ta= 25°C

0 50 100 1500

100

200

300

400

500 I - FORWARD CURRENT STEADY STATE - mA

o

D

R

A

Io - AVERAGE RECTIFIED CURRENT - mA

0 5 0 1 0 0 1 5 00

1 0 0

2 0 0

3 0 0

4 0 0

IF (A V )

- A V E R A G E R E C T IF IE D C U R R E N T - m A

Cu

rre

nt [

mA

]

Ambient Temperature, TA [ C]o

0 50 100 150 2000

100

200

300

400

500

SOD-323 Pkg

SOT-23 Pkg

DO-35 Pkg

Pow

er D

issi

patio

n, P

D [m

W]

Average Temperature, Io [oC]

BA

S16HT1G

— Sm

all Signal Diode

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.comBAS16HT1G Rev. A1 4

Physical Dimension

SOD-323

Dimensions in Millimeters

© Fairchild Semiconductor Corporation www.fairchildsemi.com

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Rev. I47