769-101 APD TIA TEC DS - Esterline Technologies … APD_TIA...Receiver TIA with TEC 200 MHz , 200μm...

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MIL-PRF-38534 CERTIFIED LAB by DSCC Receiver TIA with TEC 200 MHz , 200μm InGaAs APD (Avalanche Photodiode) 264-339769-101 MONTREAL OTTAWA CHICAGO WWW.CMCELECTRONICS.CA M I C R O E L E C T R O N I C S Description CMC Electronics’ 264-339769-101 is using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The amplifier internal feedback resistor is listed in the characteristics table. Each amplifier has an overload input protection circuit for fast recovery. The output can be AC or DC coupled to a 100 ohm load. An internal TEC allows temperature control of the APD. The APD temperature is monitored by an internal thermistor. Features Low k of 0.2 (Low noise) InGaAs APD Low power TEC High Quantum Efficiency Low Noise Equivalent Power NEP Spectral Response: 1000 to 1600nm Fast overload recovery Hermetically-Sealed TO-8 Package Applications Range Finding / LIDAR Instrumentation Laser Profiling Free –Space Communications Industrial, Medical Photometry Bloc Diagram Negative Going with light +5V 2 1 4 3 6 5 8 7 10 12 11 9 C1 1n C1 1n C6 1n OUT R8 10k D2 PHOTODIODE GND/CASE -5V Vio1 -0.5 Ty p RF + - TIA TEC TEC+ TEC- THERMAL ASSY RT1 N.C. Figure 1: CMC 264-339769 SERIES BLOCK DIAGRAM

Transcript of 769-101 APD TIA TEC DS - Esterline Technologies … APD_TIA...Receiver TIA with TEC 200 MHz , 200μm...

MIL-PRF-38534CERTIFIED LAB by DSCC

Receiver TIA with TEC 200 MHz , 200μm InGaAs APD (Avalanche Photodiode)

264-339769-101

MONTREAL OTTAWA CHICAGO WWW.CMCELECTRONICS.CA

M I C R O E L E C T R O N I C S

Description CMC Electronics’ 264-339769-101 is using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The amplifier internal feedback resistor is listed in the characteristics table. Each amplifier has an overload input protection circuit for fast recovery. The output can be AC or DC coupled to a 100 ohm load. An internal TEC allows temperature control of the APD. The APD temperature is monitored by an internal thermistor.

Features

• Low k of 0.2 (Low noise) InGaAs APD

• Low power TEC

• High Quantum Efficiency

• Low Noise Equivalent Power NEP

• Spectral Response: 1000 to 1600nm

• Fast overload recovery

• Hermetically-Sealed TO-8 Package

Applications

• Range Finding / LIDAR

• Instrumentation

• Laser Profiling

• Free –Space Communications

• Industrial, Medical

• Photometry

Bloc Diagram

Negative Going with light

+5V

2

1

4

3

6

5

8

7

10

12 11

9

C11n

C1

1n

C6

1n

OUT

R8

10k

D2

PHOTODIODE

GND/CASE

-5V

Vio1

-0.5 Ty p

RF

+

- TIA

TECTEC+

TEC-

THERMAL ASSY

RT1 t°

N.C.

Figure 1: CMC 264-339769 SERIES BLOCK DIAGRAM

Receiver TIA with TEC 200 MHz , 200μm InGaAs APD (Avalanche Photodiode)

264-339769-101

M I C R O E L E C T R O N I C S

Electro-Optical Characteristics at TA=25°C Unless otherwise specified: V+=5V, V-=-5V, VR, RL=50Ω AC, Cooler OFF (Externally AC coupled through 4.7uF)

Note : 1 - Vr as specified on datasheet of each module.

Parameter/Condition Min. Typ. Max.

Unit. VR for specified responsivity......................

Temperature Coefficient of VR.........................

Id APD dark current @ 25°C

40

-

NOTE 1

0.065

20

85

0.080

30

V

V/°C

nA Responsivity (R) 1064 1570 nm, M=10

50 90

60 100

- kV/W

Noise Equivalent Power (NEP = En/R) 1570 nm, 25˚C 1570 nm, 85°C

- -

260 310

310 370

fW/√Hz fW/√Hz

Output Spectral Noise Voltage Density (En): Average over 100 kHz to f-3dB ...

Output Impedance .................................... Bandwidth, f-3dB.............................

- -

200

25 50 210

35 - -

nV/√Hz Ω MHz

Rise Time (10-90%) Fall Time tF (90-10%)

- -

2 2

- -

ns ns

Linear Output Voltage Swing (Pulse) Output Offset Voltage ..............................

1.5 1.0

2.2 1.5

- 2.0

V V

Vout recovery within V initial At 1mW, 15ns pulse 100 nS after pulse start 200 ns after pulse start

- -

- -

50 10

mV mV

TEC and Thermistor Thermistor @25°C Thermistor slope TEC Current for ΔT=25˚C TEC Voltage for ΔT=25˚C

-

10

-4.4 0.6 1.5

-

1.0 2.9

kΩ %/°C A V

Supply current V+ V-

- -

30 15

40 20

mA mA

Internal Components R8 C1 Rf

10 10 22

kΩ nF kΩ

Receiver TIA with TEC 200 MHz , 200μm InGaAs APD (Avalanche Photodiode)

264-339769-101

Contact Andy Krilick 600 Dr. Frederik Philips Blvd. Ville Saint-Laurent, Quebec, [email protected] Canada H4M 2S9 Tel: (514) 748-3000 Ext. 4329 Fax: (514) 748-3017

For information purposes only. To accommodate product improvements, specifications are subject to change without notice. Opto769-101 Rev 0.1 Jan 2013 Printed in Canada

M I C R O E L E C T R O N I C S

0.215" nom

ACTIVE AREA

0.134" NOM

0.350" min.

0.028" NOM

ø 0.600"

ø 0.008" [200um]

-A-

-B-

0.010" A B

Pinout: 1 +5V 2 TEC- 3 TEC+ 4 Th 5 Th 6 GND

7 +HV 8 GND 9 Output 10 +5V 11 -5V 12 NC

0.400"

0.200"0.400"

0.200"

1 2 312

BOTTOM VIEW

COLORED BEAD

Absolute-Maximum Ratings, Limiting Values Photodiode Total Current (All temp.)

Average ................................... 100 uA Peak (1s).................................. 1 mA

Incident Radiant Flux, ΦM Average ..............................…. 10 uW Peak, 20ns pulses < 100Hz 100 kW/cm2

Preamplifier Voltage: V+ Max ........................... 6 V V- Max ........................... 6 V

TEC

Current 1.0 A Voltage 2.9 V

Ambient Temperature:

Storage Range, Tstg .................... -55 to +125 °C Operating Range, TA .................. -40 to + 85 °C

Mechanical and Pinout