Rev.5.00 Sep 07, 2005 page 1 of 8

2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching

REJ03G1034-0500 (Previous: ADE-208-534C)

Rev.5.00 Sep 07, 2005

Features • Low on-resistance

RDS(on) = 0.12 Ω typ. • 4 V gate drive devices. • High speed switching

Outline

RENESAS Package code: PRSS0004ZD-A

(Package name: DPAK(L)-(1))

1. Gate

2. Drain

3. Source

4. Drain

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK(S))

12 3

4

12

3

4 D

G

S

参考資料

2SK2796(L), 2SK2796(S)

Rev.5.00 Sep 07, 2005 page 2 of 8

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 5 A Drain peak current ID(pulse)

Note1 20 A Body-drain diode reverse drain current IDR 5 A Avalanche current IAP

Note3 5 A Avalanche energy EAR

Note3 2.14 mJ Channel dissipation Pch Note2 20 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V

RDS(on) — 0.12 0.16 Ω ID = 3 A, VGS = 10 V Note4 Static drain to source on state resistance RDS(on) — 0.16 0.25 Ω ID = 3 A, VGS = 4 V Note4 Forward transfer admittance |yfs| 2.5 4.0 — S ID = 3 A, VDS = 10 V Note4 Input capacitance Ciss — 180 — pF Output capacitance Coss — 90 — pF Reverse transfer capacitance Crss — 30 — pF

VDS = 10V, VGS = 0, f = 1MHz

Turn-on delay time td(on) — 9 — ns Rise time tr — 25 — ns Turn-off delay time td(off) — 35 — ns Fall time tf — 55 — ns

VGS = 10 V, ID = 3 A, RL = 10 Ω

Body–drain diode forward voltage VDF — 1.0 — V IF = 5A, VGS = 0 Body–drain diode reverse recovery time

trr — 40 — ns IF = 5A, VGS = 0 diF/ dt =50 A/ µs

Note: 4. Pulse test

参考資料

2SK2796(L), 2SK2796(S)

Rev.5.00 Sep 07, 2005 page 3 of 8

Main Characteristics

Power vs. Temperature DeratingC

hannel D

issip

ation P

ch (W

)

Case Temperature TC (°C)

Maximum Safe Operation Area

Drain to Source Voltage VDS (V)

Dra

in C

urr

ent I

D (A

)

Typical Output Characteristics

Dra

in C

urr

ent I

D (A

)

Drain to Source Voltage VDS (V)

Typical Transfer Characteristics

Gate to Source Voltage VGS (V)

Dra

in C

urr

ent I

D (A

)

Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

Dra

in to S

ourc

e S

atu

ration V

oltage

V

DS

(on) (

V)

Drain Current ID (A)

Static Drain to Source on State

Resistance vs. Drain Current

Sta

tic D

rain

to S

ourc

e o

n S

tate

Resis

tance

R

DS

(on) (

Ω)

0.2 0.5 1 2 10 20 100

5

4

3

2

1

0 2 4 6 8 10

5

4

3

2

1

0 2 4 6 8 10

10 V 6 V

40

30

20

10

0 50 100 150 200

100

30

10

3

1

0.3

0.1

3.5 V4 V5 V

VGS = 2 V

2.5 V

3 VTc = 75°C

25°C–25°C

VDS = 10 V

Pulse Test

5 50

Ta = 25°C

1 ms

PW = 10 m

s (1shot)

DC O

peration (Tc = 25°C)

Operation inthis area islimited by RDS(on)

100 µs

10 µs

Pulse Test

2.0

1.6

1.2

0.8

0.4

0 2 4 6 8 10 0.1 3 1000.3 30

5

2

1

0.2

0.5

0.1

0.05

101

ID = 5 A

2 A

1 A

VGS = 4 V

10 V

Pulse Test Pulse Test

参考資料

2SK2796(L), 2SK2796(S)

Rev.5.00 Sep 07, 2005 page 4 of 8

Case Temperature TC (°C)

Static Drain to Source on State

Resistance vs. Temperature

Sta

tic D

rain

to

So

urc

e o

n S

tate

Re

sis

tan

ce

RD

S (

on) (

Ω)

Forward Transfer Admittance

vs. Drain Current

Drain Current ID (A)

Fo

rwa

rd T

ran

sfe

r A

dm

itta

nce

y

fs

(S

)

Body to Drain Diode Reverse

Recovery Time

Reverse Drain Current IDR (A)

Re

ve

rse

Re

co

ve

ry T

ime

t r

r (

ns)

Typical Capacitance

vs. Drain to Source Voltage

Drain to Source Voltage VDS (V)

Ca

pa

cita

nce

C (

pF

)

Dynamic Input Characteristics

Gate Charge Qg (nc)

Dra

in t

o S

ou

rce

Vo

lta

ge

V

DS

(V)

Ga

te t

o S

ou

rce

Vo

lta

ge

V

GS

(V)

Switching Characteristics

Sw

itch

ing

Tim

e

t (

ns)

Drain Current ID (A)

0.5

0.4

0.3

0.2

0.1

–40 0 40 80 120 160

0

0.1 0.2 0.5 1 2 5 10

10

5

1

2

0.2

0.5

0.1

ID = 5 A

VGS = 4 V

10 V

1, 2 A

1 A2 A

5 A

25°C

Tc = –25°C

75°C

Pulse Test

VDS = 10 V

Pulse Test

0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50

1000

200

500

100

10

20

50

100

80

60

40

20

0

20

16

12

8

4

2 4 6 8 10

0

100

50

10

20

2

5

1

500

200

50

100

10

20

5

di / dt = 50 A / µs

VGS = 0, Ta = 25°C

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

ID = 5 A

VGS

VDS

VDD = 50 V25 V10 V

VDD = 10 V25 V50 V

0.1 0.2 0.5 1 2 5 10

VGS = 10 V, VDD = 30 V

PW = 5 µs, duty < 1 %

tf tr

td(on)

td(off)

参考資料

2SK2796(L), 2SK2796(S)

Rev.5.00 Sep 07, 2005 page 5 of 8

Pulse Width PW (S)

Norm

aliz

ed T

ransie

nt T

herm

al Im

pedance

γ s (

t)

Normalized Transient Thermal Impedance vs. Pulse Width

Channel Temperature Tch (°C)

Repetitive A

vala

nche E

nerg

y E

AR

(

mJ)

Maximum Avalanche Energy vs.Channel Temperature Derating

Source to Drain Voltage VSD (V)

Revers

e D

rain

Curr

ent I D

R (A

)

Reverse Drain Current vs.Source to Drain Voltage

D. U. TRg

IAPMonitor

VDS Monitor

VDD

50 ΩVin

15 V

0

I D

VDS

IAP

V(BR)DSS

L

VDD

EAR = • L • IAP2 •

2

1VDSS

VDSS – VDD

Avalanche Test Circuit Avalanche Waveform

10

8

6

4

2

0 0.4 0.8 1.2 1.6 2.0

V = 0, –5 VGS

10 V

5 V

Pulse Test

2.5

2.0

1.5

1.0

0.5

25 50 75 100 125 1500

IAP = 5 A

VDD = 25 V

duty < 0.1 %

Rg > 50 Ω

3

1

0.3

0.1

0.03

0.0110 µ 100 µ 1 m 10 m 100 m 1 10

DMP

PW

T

D =PWT

ch – c(t) = s (t) • ch – c

ch – c = 6.25°C/W, Tc = 25°Cθ γ θθ

D = 1

0.5

0.2

0.010.02

0.1

0.05

1 shot Pulse

Tc = 25°C

参考資料

2SK2796(L), 2SK2796(S)

Rev.5.00 Sep 07, 2005 page 6 of 8

Vin Monitor

D.U.T.

Vin

10 V

RL

VDD

= 30 V

trtd(on)

Vin

90% 90%

10%

10%Vout

td(off)

VoutMonitor

50 Ω

90%

10%

tf

Switching Time Test Circuit Switching Time Waveforms

参考資料

2SK2796(L), 2SK2796(S)

Rev.5.00 Sep 07, 2005 page 7 of 8

Package Dimensions

6.5 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

1.2 ± 0.3

0.55 ± 0.1

5.5

± 0

.51.7

± 0

.5

16.2

± 0

.5

3.1

± 0

.5

5.4 ± 0.5

1.15 ± 0.1

2.29 ± 0.5 2.29 ± 0.5

0.8 ± 0.1

Package Name

PRSS0004ZD-A DPAK(L)-(1) / DPAK(L)-(1)V

MASS[Typ.]

0.42g

RENESAS CodeJEITA Package Code Unit: mm

6.5 ± 0.55.4 ± 0.5

2.3 ± 0.2

0.55 ± 0.1

0 – 0.25

0.55 ± 0.1

1.5

± 0

.55.5

± 0

.52.5

± 0

.5

(1.2)

0.8 ± 0.1

2.29 ± 0.52.29 ± 0.5

1.2

Ma

x

(5.1)

(5.1

)

1.0 Max.

(0.1)(0.1)

Package Name

PRSS0004ZD-C DPAK(S) / DPAK(S)V

MASS[Typ.]

0.28gSC-63

RENESAS CodeJEITA Package CodeUnit: mm

参考資料

2SK2796(L), 2SK2796(S)

Rev.5.00 Sep 07, 2005 page 8 of 8

Ordering Information Part Name Quantity Shipping Container

2SK2796L-E 3200 pcs Box (Sack) 2SK2796STL-E 3000 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of

production before ordering the product.

参考資料