Post on 14-Mar-2018
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FETISSUE 2 – MARCH 94
FEATURES* 60 Volt VDS* RDS(on)=5Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -60 V
Continuous Drain Current at Tamb=25°C ID -280 mA
Pulsed Drain Current IDM -4 A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source BreakdownVoltage
BVDSS -60 V ID=-1mA, VGS=0V
Gate-Source ThresholdVoltage
VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage DrainCurrent
IDSS -0.5-100
µAµA
VDS=-60 V, VGS=0VDS=-48 V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) -1 A VDS=-18 V, VGS=-10V
Static Drain-Source On-StateResistance (1)
RDS(on) 5 Ω VGS=-10V,ID=-500mA
Forward Transconductance(1)(2)
gfs 150 mS VDS=-18V,ID=-500mA
Input Capacitance (2) Ciss 100 pF
Common Source OutputCapacitance (2)
Coss 60 pF VDS=-18V, VGS=0V, f=1MHz
Reverse TransferCapacitance (2)
Crss 20 pF
Turn-On Delay Time (2)(3) td(on) 7 ns
VDD ≈-18V, ID=-500mARise Time (2)(3) tr 15 ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf 15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%(2) Sample test.
(3)
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVP2106A
3-417
D G S
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
ID(O
n) -O
n-S
tate
Dra
in C
urre
nt (
Am
ps)
Transfer Characteristics
Normalised R DS(on) and VGS(th) vs Temperature
Nor
mal
ised
RD
S(o
n)an
d V
GS
(th
)
-40 -20 0 20 40 60 80 120100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain
-Sourc
e Resis
tance
RDS(o
n)
Gate Threshold Voltage VGS(th)
ID=-0.5A
0 -2 -4 -6 -8 -100 -10 -20 -30 -40 -50
Saturation Characteristics
VD
S- D
rain
Sou
rce
Vo
ltag
e (V
olt
s)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
-10V
ID(O
n)-O
n-S
tate
Dra
in C
urre
nt (
Am
ps)
VGS-Gate Source Voltage (Volts)
VGS=-10V
ID=-1mAVGS=VDS
-3.5
-3.0
-2.0
-0.5
0
-1.0
-2.5
-1.5
2.6
180
VGS=
-20V-14V
-5V
-6V
-7V
-4V-3.5V
-8V
VGS=-18V
ID(O
n) -O
n-S
tate
Dra
in C
urre
nt (
Am
ps)
VDS - Drain Source Voltage (Volts)
On-resistance v drain current
ID-Drain Current (Amps)
RD
S(O
N) -D
rain
So
urc
e R
esis
tan
ce (Ω
)
-0.1 -1.0
10
5
-2.0
-12V
-6V
-4V
0 -2 -4 -6 -8 -10
1
-10V-9V
-8V-7V
-5V
-9V
0
-0.6
-0.4
-0.2
-0.8
-1.6
-1.4-1.2
-1.0
-1.8
-2.0
0
-10
-6
-2
-4
-8
0 -2 -4 -6 -8 -10
ID=
-1A
-0.5A
-0.25A
-0.8
-0.6
-0.2
-0.4
VDS=-10V
-1.6
-1.4
-1.0
-1.2
-6V -7V VGS=-5V -8V -10V -9V
Tj-Junction Temperature (°C)
ZVP2106A
3-418
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FETISSUE 2 – MARCH 94
FEATURES* 60 Volt VDS* RDS(on)=5Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -60 V
Continuous Drain Current at Tamb=25°C ID -280 mA
Pulsed Drain Current IDM -4 A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source BreakdownVoltage
BVDSS -60 V ID=-1mA, VGS=0V
Gate-Source ThresholdVoltage
VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage DrainCurrent
IDSS -0.5-100
µAµA
VDS=-60 V, VGS=0VDS=-48 V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) -1 A VDS=-18 V, VGS=-10V
Static Drain-Source On-StateResistance (1)
RDS(on) 5 Ω VGS=-10V,ID=-500mA
Forward Transconductance(1)(2)
gfs 150 mS VDS=-18V,ID=-500mA
Input Capacitance (2) Ciss 100 pF
Common Source OutputCapacitance (2)
Coss 60 pF VDS=-18V, VGS=0V, f=1MHz
Reverse TransferCapacitance (2)
Crss 20 pF
Turn-On Delay Time (2)(3) td(on) 7 ns
VDD ≈-18V, ID=-500mARise Time (2)(3) tr 15 ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf 15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%(2) Sample test.
(3)
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVP2106A
3-417
D G S
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
ID(O
n) -O
n-S
tate
Dra
in C
urre
nt (
Am
ps)
Transfer Characteristics
Normalised R DS(on) and VGS(th) vs Temperature
Nor
mal
ised
RD
S(o
n)an
d V
GS
(th
)
-40 -20 0 20 40 60 80 120100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain
-Sourc
e Resis
tance
RDS(o
n)
Gate Threshold Voltage VGS(th)
ID=-0.5A
0 -2 -4 -6 -8 -100 -10 -20 -30 -40 -50
Saturation Characteristics
VD
S- D
rain
Sou
rce
Vo
ltag
e (V
olt
s)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
-10V
ID(O
n)-O
n-S
tate
Dra
in C
urre
nt (
Am
ps)
VGS-Gate Source Voltage (Volts)
VGS=-10V
ID=-1mAVGS=VDS
-3.5
-3.0
-2.0
-0.5
0
-1.0
-2.5
-1.5
2.6
180
VGS=
-20V-14V
-5V
-6V
-7V
-4V-3.5V
-8V
VGS=-18V
ID(O
n) -O
n-S
tate
Dra
in C
urre
nt (
Am
ps)
VDS - Drain Source Voltage (Volts)
On-resistance v drain current
ID-Drain Current (Amps)
RD
S(O
N) -D
rain
So
urc
e R
esis
tan
ce (Ω
)
-0.1 -1.0
10
5
-2.0
-12V
-6V
-4V
0 -2 -4 -6 -8 -10
1
-10V-9V
-8V-7V
-5V
-9V
0
-0.6
-0.4
-0.2
-0.8
-1.6
-1.4-1.2
-1.0
-1.8
-2.0
0
-10
-6
-2
-4
-8
0 -2 -4 -6 -8 -10
ID=
-1A
-0.5A
-0.25A
-0.8
-0.6
-0.2
-0.4
VDS=-10V
-1.6
-1.4
-1.0
-1.2
-6V -7V VGS=-5V -8V -10V -9V
Tj-Junction Temperature (°C)
ZVP2106A
3-418
TYPICAL CHARACTERISTICS
Transconductance v drain current
ID- Drain Current (Amps)
gfs-
Tra
nsco
nduc
tanc
e (m
S)
0
Q-Charge (nC)
Transconductance v gate-source voltage
VGS-Gate Source Voltage (Volts)gf
s-Tr
ansc
ondu
ctan
ce (
mS
)
0 -10 -20 -30
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-C
apac
itanc
e (p
F)
Coss
VG
S-G
ate
Sou
rce
Vol
tage
(V
olts
)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
VDS= -20V -30V -50V
-40 -50 0.2 0.4 0.6 0.8 1.0 1.2
40
20
0
60Ciss
Crss
80
100
1.4 1.6 1.8 2.0 2.2 2.4
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
0
VDS=-10V200
150
100
50
250
300
0 -2 -4 -6 -8 -10
0
VDS=-10V
200
150
100
50
250
300
ZVP2106A
3-419