InAs Photodiode KPDS100‐H54P

Features• φ1.0mm sensitive area• Cutoff wavelength 3.5µm• TO‐5 package• One‐stage TE cooler

Applications• MID‐IR sensors• MID‐IR spectroscopy• Gas analysis• Temperature sensors• Temperature sensors

TO‐39Unit: mm

1. TEC(‐)2. TEC(+)3. Thermistor(Case)4. Thermistor5. Cathode6. Anode

Absolute Maximum Ratings

Parameter Symbol Value Unit NoteReverse voltage VR 0.5 VTEC current IC 1.0 AThermistor power dissipation P 1 5 mW

Electrical and Optical Characteristics (VR=0V unless otherwise noted)

Thermistor power dissipation Pth 1.5 mWOperating temperature Topr ‐40 to +60 oC Avoid dew condensationStorage temperature Tstg ‐40 to +80 oC Avoid dew condensation

Parameter Symbol Min. Typ. Max. Unit Test ConditionCutoff wavelength λC ‐ 3.5 ‐ µmPeak sensitive wavelength λp ‐ 3.3 ‐ µmResponsivity R 1.0 1.2 ‐ A/W λ=λpShunt resistance Rsh 15 18 ‐ ΩDitectivity D* 2.5x109 3.5x109 ‐ cmHz1/2/W λ=λ

• Cooler temperature 25oC

Ditectivity D 2.5x10 3.5x10 cmHz /W λ λp

Parameter Symbol Min. Typ. Max. Unit Test ConditionCutoff wavelength λC ‐ 3.4 ‐ µmPeak sensitive wavelength λp ‐ 3.2 ‐ µmResponsivity R 1.2 1.4 ‐ A/W λ=λp

• Cooler temperature ‐20oC

(1312/KPDS100‐H54P) http://www.kyosemi.co.jp/

p y / p

Shunt resistance Rsh 300 380 ‐ ΩDitectivity D* 1.4x109 1.7x109 ‐ cmHz1/2/W λ=λp

InAs Photodiode KPDS100‐H54P

1.2

1.4

Spectral Responsivity10000

Dark Current ‐ Ambient Temperature

VR=10mV

0.2

0.4

0.6

0.8

1.0

Respon

sivity (A/W

)

‐20oC

25oC

10

100

1000

Dark current (µA

)

0.0

0.2

1.5 2.0 2.5 3.0 3.5 4.0

Wavelength (nm)

1‐40 ‐20 0 20 40 60

Ambient temperature (oC)

TEC Temperature ‐ Current TEC Current ‐ Voltage

‐10

0

10

20

30

mpe

rature (

o C)

Ta=25oCwith 2K/W Heatsink

0.4

0.6

0.8

1.0

oler current (A)

‐40

‐30

‐20

0.0 0.2 0.4 0.6 0.8 1.0

Te

Cooler current (A)

0.0

0.2

0.0 0.5 1.0 1.5 2.0

Coo

Cooler voltage (V)

100

1000

ance (kΩ

)

R25=10kΩB value=3435K

Thermistor Resistance ‐ Temperature

1

10

‐20 ‐10 0 10 20 30 40 50

Thermistor resista

(1312/KPDS100‐H54P) http://www.kyosemi.co.jp/

Temperature (oC)

InAs Photodiode KPDS100‐H54P

Specifications , characteristics, data, materials, structures specified in this datasheet are subject to change without notice. Please refer to the latest specification before use of the products.Products listed in this datasheet comply with the RoHS Directive (EU2002/95/EC).

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Opto-technologies for the Future

KYOSEMI CORPORATION http://www.kyosemi.co.jp/

(1312/KPDS100‐H54P)

Headquarters : 949 2 Ebisucho Fushimi ku, Kyoto 612 8201 Japan TEL: +81 75 605 7311Tokyo Sales Office: 24th Sky Bldg.2F, 1‐34‐3 Shinjuku Shinjuku‐ku, Tokyo 160‐0022 Japan TEL: +81‐3‐5312‐5360Kansai Sales Office: 949‐2 Ebisucho Fushimi‐ku, Kyoto 612‐8201 Japan TEL: +81‐75‐605‐7311Kyosemi Opto America Corp: 4655 Old ironsides Suite 230 Santa Clara, California 95054 USA TEL: +1‐408‐492‐9361Eniwa Operation: 358‐31 Toiso Eniwa‐shi, Hokkaido 061‐1405 Japan TEL: +81‐123‐34‐3111Kamisunagawa Operation: 70‐1 Kamisunagawa Kamisunagawa‐cho Sorachi‐gun, Hokkaido 073‐0200 Japan

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