Transcript of 2015. λ= 13.2–13.7 nm ± 1/1450 Δλ/λ 4xNA= {0.25, 0.33, 0.42, 0.50, 0.625} CRA= 6° (typical);...
- Slide 1
- 2015
- Slide 2
- = 13.213.7 nm 1/1450 / 4xNA= {0.25, 0.33, 0.42, 0.50, 0.625}
CRA= 6 (typical); 8, 10 for NA > 0.33 = 0.051 + (fully
programmable) t = 58 sec/image. (~8 through-focus series per hour,
923 images) at a glance
- Slide 3
- CRA= {6, 6, 8, 8, 10} lenses SHARP uses Fresnel zoneplate
lenses to achieve diffraction-limited quality with a range of NA
values and image magnifications. SHARP emulates the mask-side
imaging conditions of current and future EUV litho tools. Hundreds
of lenses are installed and ready for use. 4xNA= {0.25, 0.33, 0.42,
0.50, 0.625} Lenses for anamorphic imaging emulation will be ready
in 2015.
- Slide 4
- illumination SHARPs lossless Fourier synthesis illuminator
provides coherence control and engineering, to reproduce arbitrary
and complex illumination conditions. Both standard and FlexRay-type
pupil fills are available, including grayscale.
- Slide 5
- mask requirements SHARP can image any 6-inch EUV mask, across
the entire front surface. Mask navigation can be done either
manually (by eye) from a known map, or using fiducial markers and
known coordinates for points of interest. SHARP can image patterned
or reflective blank masks. SHARP can accept wafer-mask samples, in
which a specially prepared, ML-coated, wafer, or wafer piece is
attached to a standard 6-inch mask.
- Slide 6
- topics for research SHARP is used to study nearly every mask
imaging effect. Some examples include: Defects: native &
programmed defects, pattern defects, ML blank defects, phase
defects, absorber defects, covered defects Repair Strategies:
imaging before/after repair, through-focus, and under various
illumination conditions Mask Architecture and Materials: line
contrast, pattern roughness, exposure latitude, NILS OPC and Assist
Features: depth of focus, illumination dependence, CD variation ML
Roughness: effect on pattern roughness High-NA effects:
pitch-dependent pattern shift through focus
- Slide 7
- advanced topics The SHARP team is demonstrating advanced
microscopy techniques to extract more information from images.
Phase Imaging: For understanding roughness and repair through-focus
phase reconstruction Fourier-ptychography microscopy differential
phase contrast Zernike phase contrast Anamorphic Imaging: emulating
future litho tools with different x and y NA and magnification
High-Angle Multilayer Development: performance of EUVL at central
ray angles beyond 6, with 4xNA values above 0.35 Source-Mask
Optimization (SMO): customizing source pupil fill and mask patterns
for improved imaging metrics
- Slide 8
- DATA
- Slide 9
- 500 nm Courtesy Mangat, Wood: GlobalFoundries
- Slide 10
- = 0.50.7 0.33 4xNA
- Slide 11
- Coherence affects roughness 0.5 m = 0.05 = 0.5 coherentpartial
coherence ANIMATED
- Slide 12
- Coherence affects edges = 0.1 = 0.5 coherentpartial coherence
ANIMATED
- Slide 13
- Native phase and amplitude defects 2.0 m phaseamplitude focus
ANIMATED
- Slide 14
- 132-nm hp 2-m (intentional roughness) focus ANIMATED Substrate
roughness experiments
- Slide 15
- Resolutions NA dependence 4xNA 0.250.350.420.50 CD 16 nm
- Slide 16
- 5% dose levels 5% dose levels High-quality data extraction from
line patterns 100-nm CD, = 0.5 Bossung plot
- Slide 17
- Actinic mask imaging: Recent results and future directions from
the SHARP EUV Microscope, Kenneth A. Goldberg, Markus P. Benk,
Antoine Wojdyla, Iacopo Mochi, et al. SPIE 9048, 90480Y (2014).
Extreme ultraviolet mask roughness: requirements, characterization,
and modeling, Naulleau, P., S. Bhattaria, R. Chao, R. Claus, et
al., SPIE 9256 92560J, (2014). A broader view on EUV-masks: adding
complementary imaging modes to the SHARP microscope, M. P. Benk, R.
H. Miyakawa, W. Chao, Y.-G. Wang, et al. SPIE 9235 92350K, (2014).
Gradient descent algorithm applied to wavefront retrieval from
through-focus images by an extreme ultraviolet microscope with
partially coherent source, K. Yamazoe, I. Mochi, and K. A.
Goldberg, J. Opt. Soc. Am. A 31 (12), B34-43 (2014). Experimental
measurements of telecentricity errors in high-numerical-aperture
extreme ultraviolet mask images, S. Raghunathan, O. R. Wood II, P.
Mangat, E. Verduijn, et al., J. Vac. Sci. Technol. B 32, 06F801
(2014). Investigating Printability of Native Defects on EUV Mask
Blanks through Simulations and Experiments, Mihir Upadhyaya, Vibhu
Jindal, Henry Herbol, Jenah Harris-Jones, et al., EUVL Symposium
2014. New Source and Imaging Capabilities of the SHARP EUV Mask
Microscope, Kenneth A. Goldberg, Markus Benk, Antoine Wojdyla, Alex
Donoghue, et al., EUVL Symposium 2014. Fourier Ptychography
Microscopy with the SHARP EUV Microscope for increased imaging
resolution based no illumination diversity, A. Wojdyla, M. P. Benk,
D. G. Johnson, A. Donoghue, et al., EUVL Symposium 2014. Source
optimization at the SHARP microscope, Markus P. Benk, David G.
Johnson, Alexander Donoghue, Antoine Wojdyla, et al., EUVL
Symposium 2014. Phase-enhanced Defect Sensitivity for EUV Mask
Inspection, Y.-G. Wang, R. Miyakawa, W. Chao, D. Johnson, et al.,
EUVL Symposium 2014. Repairing native defects on EUV mask blanks,
M. Lawliss, E. Gallagher, M. Hibbs, K. Seki, et al., SPIE 9235
923516, (2014) Actinic Mask Imaging: _Emulating Current and Future
Litho Tools_with the SHARP EUV Microscope, (Invited) K. A.
Goldberg, M. Benk, A. Wojdyla, I. Mochi, et al., SPIE Photomask
Japan 2014. Screening EUV mask absorbers for defect repair, Takeshi
Isogawa, Kazunori Seki, Mark Lawliss, Emily Gallagher, et al., SPIE
9256 92560N, (2014). Learning from native defects on EUV mask
blanks, Emily Gallagher, Alfred Wagner, Mark Lawliss, Gregory
McIntyre, et al., SPIE 9256 92560K, (2014). Extreme ultraviolet
mask roughness: requirements, characterization, and modeling,
Patrick Naulleau, Suchit Bhattaria, Rick Chao, Rene Claus, et al.,
SPIE 9256 92560J, (2014). publications 2014
- Slide 18
- Application of phase shift focus monitor in EUVL process
control, L. Sun, S. Raghunathan, V. Jindal, E. Gullikson, et al.,
SPIE 8679 86790, (2013). Commissioning an EUV mask microscope for
lithography generations reaching 8 nm, K. A. Goldberg, I. Mochi, M.
Benk, A. P. Allezy, et al., SPIE 8679 867919, (2013). Through-focus
EUV multilayer defect repair with nanomachining, G. R. McIntyre, E.
E. Gallagher, T. E. Robinson, et al., SPIE 8679 86791I, (2013).
Pupil shaping and coherence control in an EUV mask-imaging
microscope, Iacopo Mochi, Kenneth A. Goldberg, Markus P. Benk,
Patrick P. Naulleau, SPIE 8880 888022, (2013). Increased depth of
field through wave-front coding: using an off-zone plate lens with
cubic phase modulation in an EUV microscope, Markus P. Benk,
Kenneth A. Goldberg, Iacopo Mochi, Weilun Chao, et al., SPIE 8880
88801R, (2013). Recovering Effective Amplitude and Phase Roughness
of EUV Masks, Rene A. Claus, Iacopo Mochi, Markus P. Benk, Kenneth
A. Goldberg, et al., SPIE 8880 88802B, (2013). The SEMATECH high-NA
actinic reticle review project (SHARP) EUV mask-imaging microscope,
Kenneth A. Goldberg, Iacopo Mochi, Markus P. Benk, Chihcheng Lin,
et al., SPIE 8880 88800T, (2013). publications 2013