November 2013
Thermal Characteristics
FQP4P40P-Channel QFET® MOSFET-400 V, -3.5 A, 3.1 Ω
Description
©2000 Fairchild Semiconductor Corporation FQP4P40 Rev. C0
www.fairchildsemi.com1
FQP4P40 —
P-Channel Q
FET® M
OSFET
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features• -3.5 A, -400 V, RDS(on) = 3.1 Ω (Max.) @ VGS = -10 V,
ID = -1.75 A
• Low Gate Charge (Typ. 18 nC)
• Low Crss (Typ. 11 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
FQP4P40
+θ Thermal Resistance, Junction-to-Case, Max. 1.47 6?
+θ Thermal Resistance, Junction-to-Ambient, Max. -' & 6?
TO-220
GDS
G
S
D
Symbol Parameter FQP4P40 Unit
VDSS Drain-Source Voltage -400 V
ID Drain Current -3.5 A- Continuous (TC = 25°C)
- Continuous (TC = 100°C) -2.2 A
IDM Drain Current - Pulsed (Note 1) -14 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 260 mJ
IAR Avalanche Current (Note 1) -3.5 A
EAR Repetitive Avalanche Energy (Note 1) 8.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -4.5 V/ns
PD Power Dissipation (TC = 25°C) 85 W
- Derate above 25°C 0.68 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum lead temperature for soldering, 1/8" from case for 5 seconds
300 °C
Package Marking and Ordering Information
©2000 Fairchild Semiconductor Corporation FQP4P40 Rev. C0
www.fairchildsemi.com2
FQP4P40 —
P-Channel Q
FET® M
OSFET
Electrical Characteristics TC = 25°C unless otherwise noted.
1. Repetitive rating : pulse-width limited by maximum junction temperature.2. L = 37 mH, IAS = -3.5 A, VDD = -50 V, RG = 25 Ω, starting TJ = 25°C.3. ISD ≤ -3.5 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.4. Essentially independent of operating temperature.
Notes:
Part Number Top Mark Package Reel Size Tape Width QuantityFQP4P40FQP4P40 TO-220 N/A N/A 50 units
Packing MethodTube
( N ote 4)
( Note 4)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -400 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature Coefficient
ID = -250 µA, Referenced to 25°C -- 0.36 -- V/°C
IDSSZero Gate Voltage Drain Current
VDS = -400 V, VGS = 0 V -- -- -1 µA
VDS = -320 V, TC = 125°C -- -- -10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA
On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V
RDS(on) Static Drain-Source On-Resistance
VGS = -10 V, ID = -1.75 A -- 2.44 3.1 Ω
gFS Forward Transconductance VDS = -50 V, ID = -1.75 A -- 2.7 -- S
Dynamic CharacteristicsCiss Input Capacitance VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 520 680 pF
Coss Output Capacitance -- 80 105 pF
Crss Reverse Transfer Capacitance -- 11 15 pF
Switching Characteristics td(on) Turn-On Delay Time
VDD = -200 V, ID = -3.5 A,
RG = 25 Ω
-- 13 35 ns
tr Turn-On Rise Time -- 55 120 ns
td(off) Turn-Off Delay Time -- 35 80 ns
tf Turn-Off Fall Time -- 37 85 ns
Qg Total Gate Charge VDS = -320 V, ID = -3.5 A,
VGS = -10 V
-- 18 23 nC
Qgs Gate-Source Charge -- 3.8 -- nC
Qgd Gate-Drain Charge -- 9.4 -- nC
Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- -3.5 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -14 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -3.5 A -- -- -5.0 V
trr Reverse Recovery Time VGS = 0 V, IS = -3.5 A,
dIF / dt = 100 A/µs
-- 260 -- ns
Qrr Reverse Recovery Charge -- 1.4 -- µC
©2000 Fairchild Semiconductor Corporation FQP4P40 Rev. C0
www.fairchildsemi.com3
FQP4P40 —
P-Channel Q
FET® M
OSFET
Typical Characteristics
0 2 4 6 8 10 21 41 16 81 200
2
4
6
8
10
12
VDS
= -200V
VDS
= -80V
VDS
= -320V
※ Note : ID = -3.5 A
-VG
S, G
ate-
Sou
rce
Vol
tage
[V]
QG, Total Gate Charge [nC]
10-1 0
101
0
200
400
600
800
1000
1200C
iss = C
gs + C
gd (C
ds = shorted)
Coss
= Cds
+ Cgd
Crss
= Cgd
※ Notes : 1. V
GS = 0 V
2. f = 1 MHzCrss
Coss
Ciss
Cap
acita
nce
[pF]
10
VDS
, Drain-Source Voltage [V]
0.0 0.5 1.0 1.5 2.0 2.5 3.010
-1
100
101
150 ※ Notes : 1. V
GS = 0V
2. 250μs Pulse Test
25
-ID
R ,
Rev
erse
Dra
in C
urre
nt [
A]
-VSD
, Source-Drain Voltage [V]
00 30 120
2
4
6
8
※ Note : TJ = 25
VGS
= - 20V
VGS
= - 10V
RD
S(o
n) [
Ω],
Dra
in-S
ourc
e O
n-R
esis
tanc
e
-ID , Drain Current [A]
2 6 84 1010
-1
100
101
150
25
-55 ※ Notes : 1. V
DS = -50V
2. 250μs Pulse Test
-ID ,
Dra
in C
urre
nt [
A]
-VGS
, Gate-Source Voltage [V]10
-110
010
110
-2
10-1
100
101 V
GS
Top : -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V
Bottom : -5.5 V
※ Notes : 1. 250μs Pulse Test 2. T
C = 25
-ID, D
rain
Cur
rent
[A]
-VDS
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
©2000 Fairchild Semiconductor Corporation FQP4P40 Rev. C0
www.fairchildsemi.com4
FQP4P40 —
P-Channel Q
FET® M
OSFET
Typical Characteristics (Continued)
1 0-5
1 0-4
1 0-3
1 0-2
1 0-1
1 00
1 01
1 0-2
1 0-1
1 00
※ N o te s : 1 . Z θ J C
( t ) = 1 4 7.4 /W M a x . 2 . D u ty F a c to r , D = t
1/ t
2
3 . TJ M
- TC
= PD M
* Z θ J C( t )
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
25 50 75 100 125 1500
1
2
3
4
-ID, D
rain
Cur
rent
[A]
TC, Case Temperature []
100
101
102
103
10-2
10-1
100
101
102
DC
10 ms
1 ms
100 µs
Operation in This Area is Limited by R
DS(on)
※ Notes :
1. TC = 25
oC
2. TJ = 150
oC
3. Single Pulse
-ID, D
rain
Cur
rent
[A]
-100 -50 0 50 100 150 2000.0
0.5
1.0
1.5
2.0
2.5
※ Notes : 1. V
GS = -10 V
2. ID = -1.75 A
RD
S(O
N), (
Nor
mal
ized
)D
rain
-Sou
rce
On-
Res
ista
nce
TJ, Junction Temperature [
oC]
-100 -50 0 50 100 150 2000.8
0.9
1.0
※ Notes : 1. V
GS = 0 V
2. ID = -250 μA
-BV
DSS
, (N
orm
aliz
ed)
Dra
in-S
ourc
e Br
eakd
own
Volta
ge
TJ, Junction Temperature [
oC]
-VDS
, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs. Case Temperature
Figure 7. Breakdown Voltage Variationvs. Temperature
Figure 8. On-Resistance Variationvs. Temperature
t1, S q u a re W a v e P u ls e D u ra t io n [s e c ]
Figure 11. Transient Thermal Response Curve
t1
PDM
t2
Z JC
(t), T
herm
al R
espo
nse
[o C/W
]
©2000 Fairchild Semiconductor Corporation FQP4P40 Rev. C0
www.fairchildsemi.com5
FQP4P40 —
P-Channel Q
FET® M
OSFET
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VVDSDS
VVGSGS1010%%
90%90%
ttd(d(onon)) ttrr
tt onon tt ofofff
ttd(d(ofofff)) ttffVVDDDD
VVDSDS
RRLL
DUTDUT
RRGG
VVGSGS
ChChargargee
VVGSGS
QQgg
QQgsgs QQgdgdVVGSGS
DUDUTT
VVDSDS
300300nFnF
50K50KΩΩ
200n200nFF12V12V
SamSamee T Tyypepeas as DUDUTT
EEEAS AS AS ----=== 21212121------------ LLL ASASASIII
BVBVDSDSSS222 ----------------------------------------
BVBVDSDSSS - V- VDDDD
VVDDDD
VVDSDS
BVBVDSSDSS
t t pp
VVDDDD
IIASAS
VVDS DS (t)(t)
IID D (t(t))
TiTimmee
DUDUTT
RRGG
LLL
III DDD
t t pp
IG = const.
VVGSGS
VVGSGS
©2000 Fairchild Semiconductor Corporation FQP4P40 Rev. C0
www.fairchildsemi.com6
FQP4P40 —
P-Channel Q
FET® M
OSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
••
DUTDUT
VVDSDS
++
__
DrivDrivererRRGG
ComCompplliimmentent ofof DUTDUT (N-(N-CChannelhannel))
VVGSGS •• ddvv//dtdt ccoontntrroolllleed d bbyy RRGG
IISDSD ccononttrrolollleded byby pupullsse e peperriiodod
VVDDDD
LLLII SDSD
1010VVVVGSGS
( ( DrivDriver er ))
II SDSD
( ( DUT DUT ))
VVDSDS
( ( DUT DUT ))
VVDDDDBoBodydy DDiiooddee
ForForwward ard VVololttagage e DrDropop
IIFMFM ,, BoBodydy DDiiodode e FFororwwaarrd d CCuurrrrenentt
VVSDSD
BoBodydy DDiiodode e RReevveerrssee CCuurrrrenentt
IIRMRM
BoBodydy DiDiodode e RReecovcoveerryy dvdv/d/dtt
didi//dtdt
D D D === ---------GateGateGate--------------------------- PPPulululsss------------------------e e e WWWiiiddd---------------ttthhh---GaGaGate te te PuPuPulllssseee PePePerrriiiododod
©2000 Fairchild Semiconductor Corporation FQP4P40 Rev. C0
www.fairchildsemi.com7
FQP4P40 —
P-Channel Q
FET® M
OSFET
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation ABPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003
©2000 Fairchild Semiconductor Corporation FQP4P40 Rev. C0
www.fairchildsemi.com8
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:1. Life support devices or systems are devices or systems which, (a) are
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2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety oreffectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms
AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®
Dual Cool™EcoSPARK®
EfficentMax™ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™FACT®
FAST®
FastvCore™FETBench™FPS™
F-PFS™FRFET®
Global Power ResourceSM
GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®
OptoHiT™OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™Programmable Active Droop™QFET®
QS™Quiet Series™RapidConfigure™
Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®
STEALTH™SuperFET®
SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®
SyncFET™
Sync-Lock™®*
TinyBoost®
TinyBuck®
TinyCalc™TinyLogic®
TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™
UHC®
Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™
®
™
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No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
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Rev. I66
tm
®
FQP4P40 —
P-Channel Q
FET® M
OSFET
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