©2002 Fairchild Semiconductor Corporation Rev. B1, April 2002

KSK

595

Si N-channel Junction FETAbsolute Maximum Ratings Ta=25°C unless otherwise noted

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Ratings UnitsVGDO Gate-Drain Voltage -20 VIG Gate Current 10 mAID Drain Current 1 mAPD Power Dissipation 100 mWTJ Junction Temperature 150 °CTSTG Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. UnitsBVGDO Gate-Drain Breakdown Voltage IG= -100uA -20 VVGS(off) Gate-Source Cut-off Voltage VDS=5V, ID=1µA -0.6 -1.5 VIDSS Drain Current VDS=5V, VGS=0 150 350 µAlYFSl Forward Transfer Admittance VDS=5V, VGS=0, f=1MHz 0.4 1.2 msCiss Input Capacitance VDS=5V, VGS=0, f=1MHz 3.5 pFCrss Output Capacitance VDS=5V, VGS=0, f=1MHz 0.65 pF

KSK595

Capacitor Microphone Applications• Especially Suited for use in Audio, Telephone Capacitor Microphones• Excellent Voltage Characteristic• Excellent Transient Characteristic

1.Drain 2. Source 3. Gate

SOT-231

2

3

©2002 Fairchild Semiconductor Corporation Rev. B1, April 2002

KSK

595Specified Test Circuit Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. UnitsGV Voltage Gain VIN=10mV, f=1KHz -3 dB∆GVV Reduced Voltage Characteristic VIN=10mV, f=1KHz

VCC=4.5V → 1.5V-1.2 -3.5 dB

∆GVF Frequency Characteristic f=1KHz to 110Hz -1 dBZIN Input Resistance f=1KHz 25 MΩZO Output Resistance f=1KHz 700 ΩTHD Total Harmonic Distortion VIN=30mV, f=1KHz 1 %VNO Output Noise Voltage VIN=0, A CURVE -110 dB

Cin=15p

V

VTVMOSC

RL=1k

THD

A

+33u

VCC=4.5V

VCC=1.5V

B

1k

©2002 Fairchild Semiconductor Corporation

KSK

595

Rev. B1, April 2002

Typical Characteristics

Figure 1. Figure 2.

Figure 3. Figure 4.

Figure 5. Figure 6.

0 1 2 3 4 5 6 7 8 9 100

50

100

150

200

250

300

350

400

450

500

VGS = -0.3V

IDSS = 200µA

VGS = 0

VGS = -0.1V

VGS = -0.2V

VGS = -0.4V

I D[ µ

A], D

RAI

N C

UR

REN

T

VDS[V], DRAIN-SOURCE VOLTAGE

-1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.00.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VDS = 5V

I D[m

A], D

RAI

N C

UR

REN

T

VGS[V], GATE-SOURCE VOLTAGE

0.1 10.1

1

10

-

-

-VDS = 5V ID = 1µA

V GS(o

ff)[V

], G

ATE-

SOUR

CE

CUT-

OFF

VO

LTAG

E

IDSS[mA], DRAIN CURRENT

0 1 2 3 4 5 6 7 8 9 100

100

200

300

400

500

600

700

800

900

1000

VGS = -0.6VVGS = -0.5V

I D[µ

A], D

RAI

N C

UR

REN

T

VDS[V], DRAIN-SOURCE VOLTAGE

IDSS = 500µA

VGS = -0.4VVGS = -0.3V

VGS = -0.2V

VGS = -0.1V

VGS = 0

0.1 10.1

1

10

VDS = 5VVGS = 0f=1kHz

lFSl

[ms]

, FO

RWAR

D TR

ANSF

ER A

DMIT

TANC

E

IDSS[mA], DRAIN CURRENT

1 101

10

100

C iss[p

F], I

NPUT

CAP

ACIT

ANCE

VDS[V], DRAIN-SOURCE VOLTAGE

©2002 Fairchild Semiconductor Corporation

KSK

595

Rev. B1, April 2002

Typical Characteristics (Continued)

Figure 7. Figure 8.

Figure 9. Figure 10.

Figure 11. Figure 12.

1 100.1

1

10

VGS = 0f = 1MHz

Crs

s[pF]

, OUT

PUT

CAPA

CITA

NCE

VDS[V], DRAIN-SOURCE VOLTAGE

10 100 1000-120

-118

-116

-114

-112

-110VNO:VCC =4.5V VI = 0, A CURVE RL = 1KΩ

IDSS:VDS=5V

V NO[d

B], O

UTP

UT

NO

ISE

VOLT

AGE

IDSS[µA], DRAIN CURRENT

10 100 100026

28

30

32

34

36ZI:VCC =4.5V VIN = 10mV f = 1kHzIDSS:VDS=5V

Z I[M

Ω],

INPU

T R

ESIS

TAN

CE

IDSS[µA], DRAIN CURRENT

0 25 50 75 100 125 1500

20

40

60

80

100

120

140

P C[m

W],

POW

ER D

ISSI

PATI

ON

Ta[oC], AMBIENT TEMPERATURE

10 100 1000200

300

400

500

600

700ZO:VCC =4.5V VIN = 10mV f = 1kHzIDSS:VDS=5V

Z O[Ω

], O

UTP

UT

RESI

STAN

CE

IDSS[µA], DRAIN CURRENT

100 10001

10

100

THD:VCC = 4.5V VIN = 30mV f = 1kHzIDSS:VDS = 5V

THD

[%],

TOTA

L H

ARM

ON

IC D

ISTO

RTI

ON

IDSS[µA], DRAIN CURRENT

©2002 Fairchild Semiconductor Corporation

KSK

595

Rev. B1, April 2002

Typical Characteristics (Continued)

Figure 13. Figure 14.

Figure 15.

10 100 1000-6

-4

-2

0

2

4∆GVV:VCC = 4.5V → 1.5V VIN = 10mV f = 1kHzIDSS:VDS=5V

∆G

VV -

I DSS

[dB]

, R

EDU

CED

VO

LTAG

E CH

ARAC

TER

ISTI

C

IDSS[µA], DRAIN CURRENT

0 40 80 120 160 200 2400.1

1

10

100

IDSS = 200µA

IDSS = 400µA

IDSS = 100µA

THD

[%],

TOTA

L H

ARM

ON

IC D

ISTO

RTIO

N

VIN[mV], INPUT VOLTAGE

THD:VCC = 4.5V VIN = 30mV f = 1kHzIDSS:VDS = 5V

10 100 1000-10

-8

-6

-4

-2

0

2

4

6

8

10GV:VCC = 4.5V VIN = 10mV RL = 1kΩ

IDSS:VDS = 5V

GV[d

B], V

OLT

AGE

GAI

N

IDSS[µA], DRAIN CURRENT

0.96~1.14

0.12

0.03~0.10

0.38 REF

0.40 ±0.03

2.90 ±0.10

0.95 ±0.03 0.95 ±0.03

1.90 ±0.03 0.508REF

0.9

7R

EF

1.3

0 ±

0.1

00.4

5~

0.6

0

2.4

0 ±

0.1

0

+0.05–0.023

0.2

0 M

IN

0.40 ±0.03

SOT-23

Package Demensions

Rev. B1, April 2002

KSK

595

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.As used herein:

©2002 Fairchild Semiconductor Corporation Rev. H5

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is notintended to be an exhaustive list of all such trademarks.

1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.

2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

STAR*POWER is used under license

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FAST®

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SLIENT SWITCHER®

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