Phase equilibria and β-BaB2O4 crystal growth in the BaB2O4–BaF2 system
Transcript of Phase equilibria and β-BaB2O4 crystal growth in the BaB2O4–BaF2 system
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Phase equilibria and b-BaB2O4 crystal growth in the BaB2O4–BaF2 system
Tatyana Bekker,*a Alexander Kokha and Pavel Fedorovb
Received 16th January 2011, Accepted 11th March 2011
DOI: 10.1039/c1ce05071k
The phase formation in the BaB2O4–BaF2 system has been studied. According to the results obtained,
the BaB2O4–BaF2 system is quasi binary with the eutectic at 760 �C, 41 mol% of BaB2O4, and 59 mol%
of BaF2. The fast pyrohydrolysis of BaF2 in air causes the gradual transformation of the BaB2O4–BaF2
system into the BaB2O4–BaO system and results in the co-crystallization of BaB2O4 and Ba5B4O11
phases, making the growth of large high-quality b-BaB2O4 crystals in air impossible.
Introduction
BBO (b-BaB2O4) crystal is a nonlinear optical material widely
used in the commercial laser systems. It combines a number of
unique properties.1–4 For instance, BBO is the only NLOmaterial
that can be used for the fifth harmonic generation (5HG) of Nd:
YAG lasers at 213 nm. Frequency-doubling and -tripling of
ultrashort pulse lasers (Ti:sapphire) are the applications in which
BBO shows more preferable characteristics than other nonlinear
optical crystals. However, some applications such as large
aperture laser systems have remained limited.
Due to the phase transition at 925 �C the main method for
growing BBO crystals is crystallization from a high temperature
solution by the top seeded solution growth technique. The most
promising results in terms of crystal quality have been obtained
using Na2O as the solvent and some compositions in the BaO–
B2O3–Na2O ternary system.5–10 However, the growth process in
such boron-enriched systems is hindered by the high viscosity of
the melt. This results in the constitutional undercooling and
related cellular growth, preventing the formation of large high-
quality crystals.
Fluoride solvents that allow a reduction in the viscosity of the
melt are of great interest for growing BBO crystals. Thus, the
viscosity of the BaB2O4–NaF system is 15% below the viscosity
of the BaB2O4–Na2O system in the corresponding growth
temperature range.11 W. Chen et al. reported the growth of a b-
BaB2O4 crystal with a diameter of 100 mm, height of 40 mm and
mass of 800 g in the BaB2O4–NaF system; it was used to produce
an optical element 21 � 14 � 8 mm3 in size.12 The reproducibility
of this result was not discussed. Our investigations of the
BaB2O4–NaF system showed that it could not be considered as
quasi binary. It includes a primary crystallization area of the new
compound Ba2Na3[B3O6]2F (hexagonal system, P63/m, a¼ 7,346
aInstitute of Geology andMineralogy Siberian Branch of Russian Academyof Science, Novosibirsk, Russia. E-mail: [email protected]; Fax:+7 383 333394; Tel: +7 383 333394bGeneral Physics Institute Russian Academy of Science, Moscow, Russia.E-mail: [email protected]
3822 | CrystEngComm, 2011, 13, 3822–3826
(1) �A, c ¼ 12,637(2) �A) and belongs to the BaB2O4–(NaBO2)2–
(NaF)2–BaF2 ternary mutual system. Chemical processes in the
melt in the BaB2O4–NaF system are responsible for the essential
decrease of the yield coefficient during the growth of b-BaB2O4
crystals.13,14
Another fluoride compound BaF2 was also considered as
a candidate for the solvent. For b-BaB2O4 crystal growth the
BaF2 solvent was first used by C. Chen et al.15 Jiang et al. grew
large transparent b-BaB2O4 crystals from the composition
55.6 mol% BaB2O4 and 44.4 mol% BaF2.16 The eutectic
temperature determined by differential-thermal analysis was
752 �C. The liquidus temperature for several compositions was
determined by means of visual polythermal analysis (see Fig. 1).
Feigelson et al.5 carried out limited experiments with BaF2
additions to the BaB2O4–Na2O system. Modest viscosity reduc-
tions were achieved with additions of up to 10 wt% BaF2.
Kaplun et al. investigated the phase equilibria in the BaB2O4–
BaF2 system by the vibration method of phase analysis and
thermal analysis17 and the results reported were quite different
from those by Jiang et al.16 According to the Kaplun et al. data,
the composition used for b-BaB2O4 crystal growth by Jiang et al.
belongs to the BaF2 primary crystallization area. The determined
eutectic coordinates were 57 mol% BaB2O4, 43 mol% BaF2 and
a temperature of 890 �C. The temperature range of b-BaB2O4
crystallization was very small - from 925 to 890 �C and the
corresponding concentration range was from 61 to 57 mol%
BaB2O4. Several growth experiments were carried out by spon-
taneous crystallization and TSSG technique.
Disagreements in the interpretation of the phase equilibria in
the BaB2O4–BaF2 system impelled us to carry out further
investigations.
Experimental
The phase equilibria in the BaB2O4–BaF2 system were studied
using the modified method of visual polythermal analysis (VPA),
solid-phase synthesis, X-ray powder diffraction analysis (XRD),
and differential thermal analysis (DTA). We used commercially
This journal is ª The Royal Society of Chemistry 2011
Fig. 1 The phase equilibria in the BaB2O4–BaF2 system. 1, the data
obtained by VPA; 2, the data obtained by DTA; 3, the data obtained by
Jiang et al.16 by VPA; 4, the data obtained by Jiang et al.10 by DTA.
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available BaCO3, H3BO3 and BaF2 of high-purity grade as
starting materials.
The modified VPA method allows the determination of the
liquidus temperature in a high-temperature solution of specified
composition.18 The experiments were performed in a precise
furnace with a thermal field of high symmetry and stability. The
solution (40 g) was prepared in a platinum crucible (40 mm
diameter) through the intermediate stage of solid-phase
synthesis. The solution was then overheated and kept for several
hours for homogenization. The furnace temperature was
decreased stepwise by 5 �C increments; at each temperature stage
the solution was kept for 1–2 h while the seed material was
introduced. Chips of spontaneously grown crystals that were
0.5–1 mm in transverse size were used, compositionally corre-
sponding to the crystallization field of the given phase, as the seed
material. We estimate the accuracy of the modified VPA at�5 �Cand believe that this method mostly excludes the errors stemming
from the melt undercooling.
The solid-phase synthesis was performed in platinum crucibles
with periodic sample grinding. The ratio and amount of the
components were determined on the basis of the calculated
composition to reach 5 g total weight of the final product. Each
sample obtained was characterized with its XRD pattern.
The XRD patterns were recorded with the use of a DRON-3
diffractometer (CuKa irradiation). The DTA experiments were
carried out in air in a platinum crucible. Thermocouples were
calibrated against the melting points of ground single crystals of
This journal is ª The Royal Society of Chemistry 2011
NaCl (800 �C) and LiF (845 �C). The accuracy of determination
of the thermal effects was �5 �C.Chemical analysis was performed by Energy Dispersion
Spectroscopy technique with the use of a JSM-6480LV Electron
Microscope (JEOL) with INCA Oxford Instruments device.
Results and discussion
Phase equilibria in the BaB2O4–BaF2 system
Modified VPA was applied to study the concentration range
from 30 to 65 mol% of BaF2. The obtained liquidus temperatures
are presented in Table 1 and Fig. 1. Two compositions were
investigated by DTA (see Fig. 1). The results obtained are in
a good agreement with those by Jiang et al.16 The annealing
temperature and time for the solid-state synthesis were 720 �Cand 2 d. The criterion of reaction completion was the constant
ratio of peak intensities. All the XRD patterns of the samples
contained reflections of b-BaB2O4 and BaF2. Thus, the BaB2O4–
BaF2 system could be considered as quasi binary with the eutectic
at 59 mol% BaF2 and a temperature of 760 �C.
Growth of b-BaB2O4 crystals in the BaB2O4–BaF2 system
We performed three successive growth cycles on b-BaB2O4
crystal growth in the BaB2O4–BaF2 system. The crystals were
grown by the top-seeded solution growth technique in a precise
furnace with a heat field of 3-fold axis symmetry L3.19 A high-
temperature solution of 0.7 kg 54.5 mol% BaB2O4–45.5 mol%
BaF2 composition was melted in a platinum crucible (80 mm in
diameter and 80 mm in height). A crystal was grown on a 5 �5 mm2 seed oriented along the optical axis. After determining the
equilibrium temperature, the seed was allowed to grow using
constant one-sided rotation (1 rpm). The cooling and pulling
rates varied from 1 to 2 K d�1 and 0.43 to 0.17 mm d�1, respec-
tively, during the crystal growth.
To repeatedly use the prepared solution, we added BaB2O4
synthesized from metaboric acid H3BO3 and BaCO3 after each
growth cycle. The weight of the added material corresponded to
the grown crystal weight.
Table 2 contains the experimental data on b-BaB2O4 crystal
growth in the BaB2O4–BaF2 system. Due to the sharp incline of
the liquidus line, the theoretical value of the yield coefficient in
the BaB2O4–BaF2 system is relatively small 1.58 g/(kg �C). Theexperimental value of the yield coefficient turned out to be much
less than the theoretical one. It was 1.05 g/(kg �C) for the first
growth cycle and decreased to 0.72 g/(kg �C) for the two
following ones.
The crystal grown in the first growth cycle with a weight of
62.4 g is shown in Fig. 2. It doesn’t have light scattering centres in
most of the volume. We would like to pay attention to the
morphology of the crystal. Normally, the faces appearing on the
BBO crystals are rhombohedra R{102} and r{014}, trigonal
prisms m1{100} or m2{�100}, hexagonal prism a{2�10} and
monohedron c(001) or c(00�1).20 The crystal grown in the
BaB2O4–BaF2 system exhibits three rhombohedral and six
ditrigonal pyramidal faces (Fig. 2). The measured Bragg angle q
(DRON-3 diffractometer, CuKa irradiation) was 8.8� for the
rhombohedral faces and 20.9� for the ditrigonal pyramidal faces.
According to the structural data, the observed faces belong to
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Table 1 Study of the BaB2O4- BaF2 System by VPA
meltcomposition (mol%)
Crystallization onset temperaturedetermined by VPA, �C
meltcomposition (mol%)
Crystallization onset temperaturedetermined by VPA, �C
70 BaB2O4–30 BaF2 >970 50 BaB2O4–50 BaF2 86565 BaB2O4–35 BaF2 960 45 BaB2O4–55 BaF2 81560 BaB2O4–40 BaF2 945 40 BaB2O4–60 BaF2 80555 BaB2O4–45 BaF2 897 35 BaB2O4–65 BaF2 845
Fig. 2 Photographs of the b-BaB2O4 crystal grown in the BaB2O4–BaF2
system (side and upper view) and schematic drawing of the crystal
morphology.
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rhombohedra R{102} and ditrigonal pyramid {215} simple
forms, correspondingly. In the second cycle, a cracked unfaceted
crystal was grown. The XRD analysis of the crystal exhibited
a set of peaks corresponding to b-BaB2O4. A hard polycrystalline
aggregate of 32 mm in diameter and 5 mm in height was grown in
the third growth cycle. Three parallel thin plates were cut from
the central part of the aggregate as shown in Fig. 3 and investi-
gated by XRD analysis. For the identification of the compounds
we used the existing data bank (International center for
diffraction data). The XRD pattern of sample (a) corresponds to
nearly pure b-BaB2O4 phase. Several additional peaks of very
low intensity can be seen. The XRD patterns of samples (b) and
(c) exhibit clearly revealed sets of peaks corresponding to the b-
BaB2O4 and Ba5(BO3)2(B2O5) phases. The compound
Ba5(BO3)2(B2O5) (Ba5B4O11, BaO : B2O3 ¼ 2.5 : 1) with space
group P212121, a ¼ 9.590, b ¼ 16.66, c ¼ 22.92 �A (PDF 00-058-
0115) melts incongruously at 1170 �C (Fig. 4).21 The crystal
structure of Ba5B4O11 is described in detail in ref. 22. Thus, the
aggregate is composed of co-crystallized b-BaB2O4 and
Ba5B4O11 phases and the relative content of the Ba5B4O11 phase
increases during the growth process.
Based on the weight loss of the initial high temperature solu-
tion we estimated the volatility of the BaB2O4–BaF2 system at
temperatures from 940 to 840 �C as 25 mg/h.
We believe that the results obtained are connected with the
process of pyrohydrolysis.23,24 This process occurs at high
temperature in air and consists of the fluorides reaction with
water, with the elimination of HF. In our case the fluoride ion in
BaF2 is replaced by an O2� anion according to the reaction
shown in eqn 1:
BaF2 + H2O / BaO + 2HF[ (1)
The pyrohydrolysis of BaF2 during crystallization causes the
gradual transformation of the BaB2O4–BaF2 system into the
BaB2O4–BaO system. The excess of barium oxide forming
accumulates in the high temperature solution over the course of
time and reacts with BaB2O4 according to the reaction shown in
Table 2 Experimental data on b-BaB2O4 crystal growth in the BaB2O4–BaF
Growthcycle
cooling range/�C
pullingrange/mm
Crystalweight/g
Crystaand h
1 85 15.13 62.4 53�20
2 85 15.71 42.5 47�153 35 17.6 17.5 32�5
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eqn 2. As a result, we observe the co-crystallization of b-BaB2O4
and Ba5B4O11 phases.
2BaB2O4 + BaO / Ba5B4O11 (2)
Thus, the initial growth composition of 54.5 mol% BaB2O4–
45.5 mol% BaF2 could finally transform into 54.5 mol% BaB2O4–
45.5 mol% BaO or 35.3 mol% B2O3–64.7 mol% BaO composi-
tion. According to the phase equilibria along the B3B2O6–
BaB2O4 section (Fig. 521), the composition containing 64.7 mol%
BaO corresponds to the Ba5B4O11 primary crystallization area.
The eutectic temperature of the B3B2O6–BaB2O4 section is 905�7 �C.We could suggest that the much higher eutectic temperature
of 890 �C reported in ref. 17 for the BaB2O4–BaF2 system is due
to the long-term exposure of the high temperature solution to air
and, correspondingly, the accumulation of the high-temperature
Ba5B4O11 compound in the solution.
On the surface of the grown aggregate we observed a lot of
cracks and small spherical particles (see Fig. 5). Table 3 shows
the results of the energy-dispersive X-ray fluorescence analysis.
According to the results of EDXRF analysis, the aggregate
surface lacked boron. The X-ray powder diffraction pattern of
the thin sample cut from the surface, contains b-BaB2O4 and
Ba5B4O11 phases, and also a set of peaks of low temperature a-
modification of BaCO3, which is stable up to 810 �C (Fig. 6). The
a-BaCO3 peaks are rather broad, which could be connected with
2 system
l diametereight/mm
yield coefficient/g/(kg �C) Crystal characteristic
1.05 faceted crystal, poor quality (seeFig. 2)
0.72 unfaceted block crystal0.72 white polycrystalline aggregate
This journal is ª The Royal Society of Chemistry 2011
Fig. 3 X-ray diffraction patterns of the aggregates grown in the
BaB2O4–BaF2 system. 1, b-BaB2O4; 2, Ba5B4O11.
Fig. 4 Phase equilibria along the Ba3B2O6–BaB2O4 section.21 1, the data
obtained by DTA; 2, the data obtained by VPA; 3, the data taken from
Ref. 25.
Fig. 5 Photographs of the surface of the polycrystalline aggregate grown
from the high-temperature solution in the BaB2O4–BaF2 system.
Table 3 The results of the energy-dispersive X-ray fluorescence analysis
Element
Spectrum 1 Spectrum 2
wt% at% wt% at%
C Ka 6.94 19.27 6.08 17.05O Ka 31.60 65.82 32.22 67.82Ba La 61.45 14.91 61.69 15.13
Fig. 6 The X-ray diffraction patterns of the surface layer of the aggre-
gate grown in the BaB2O4–BaF2 system. 1, b-BaB2O4; 2, Ba5B4O11; 3,
a-BaCO3.
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the small size of the blocks of coherent scattering. We believe that
the barium oxide forming in the high-temperature solution due
to the process of pyrohydrolysis could react with carbon dioxide
contained in air according to the reaction shown in eqn 3:
BaO + CO2 / BaCO3 (3)
This results in b-BaCO3 crystallization on the aggregate
surface. While cooling of the grown aggregate phase transition
into low–temperature a-BaCO3 modification occurs.
Conclusions
According to the data obtained, the BaB2O4–BaF2 system is
quasi binary with the eutectic coordinates 750 �C, 41 mol%
BaB2O4, and 59 mol% BaF2. The fast pyrohydrolysis of BaF2 in
air causes a gradual transformation of the BaB2O4–BaF2 system
into the BaB2O4–BaO system and results in the co-crystallization
of BaB2O4 and Ba5B4O11 phases. It seems that b-BaB2O4 crystals
of good quality can be grown in the BaB2O4–BaF2 system only in
an inert gas atmosphere.
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Acknowledgements
The authors wish to thank Mr Gontar’ I.V. for carrying out
chemical analysis. The investigations are partly supported by
RFBR grant # 09-02-12261-ofi_m.
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