Nanophysics III Michael Hietschold Solid Surfaces Analysis Group & Electron Microscopy Laboratory...
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Transcript of Nanophysics III Michael Hietschold Solid Surfaces Analysis Group & Electron Microscopy Laboratory...
Nanophysics IIINanophysics III
Michael Hietschold
Solid Surfaces Analysis Group &
Electron Microscopy Laboratory
Institute of Physics
Portland State University, May 2005
Remark 1: concerning the nature of the „one-dimensional“ states: ψ(r) = φ(z) exp i(kxx + kyy)
Eµ = Ei + ħ2/2m (kx2 + ky
2) E
k┴
EI
EII
EIII
The „1d levels“ correspondto the bottoms of (sub-)bands
Resonance tunneling structure:
50 periods of72 Å n-GaAs quantum well39 Å undoped Al0.33Ga0.67As barrier
18 Å undoped GaAs quantum well,154 Å undoped Al0.33Ga0.67As barrier
Barriers asymmetrically designed to have the same transmittivity for
a forward bias
IR illuminating causes a photo-current
3rd Lecture
4.3. Superlattices
5. 2-Dimensional Electron Gas
6. Quantum Interference, Molecular Devices, and Self-Assembling
7. Outlook
4.3.Superlattices
1970 Esaki & Tsu:Periodic nm-scale superperiodicitysuperimposed on the atomic-scale lattice periodicity
Kronig-Penney model !
contravariant covariant
A1 e κ x + B1 e – κ x ( - l + a ≤ x < 0 )
φ(x) = A2 e ik x + B2 e – ik x ( 0 ≤ x < a )
V(x + l) = V(x) φ(x + l) = λ φ(x) | λ | = 1, i.e. λ = e iKl
e iK l [ A1 e κ (x-l) + B1 e -κ (x-l) ] ( a ≤ x < l )
φ(x) = e iK l [ A2 e ik (x-l) + B2 e –ik (x-l) ] ( l ≤ x < l + a )
Continuous 1st derivative:
cos Kl = cos ka cosh κb + [(κ2 – k2) / (2κk)] sin ka sinh κb
| cos Kl | < 1
„energy bands“ - subbandstructure inside the „ordinary“ bands
Sub-band structure engineering:
http://techtransfer.nrl.navy.mil/exhibits/pdfs/Info%20Sheet%20pdfs/Nanotechnology/STM_Superlattice_2.pd
http://www.pa.uky.edu/~straley/poster/Xu-DeLong2004.pdf
5. 2-Dimensional Electron Gas
Free-Electron Gases: noninteracting free particles ψk,s = χ(sz) φk(r)
φk(r) = 1/√V exp ikr, k = (kx,ky,kz) 3-dimensional
= 1/√A exp ikr, k = (kx,ky) 2-dimensional
Single-particle energies ε(k) = ε0 + ħ2k2/2m
Single-particle density n = N/V = N/A
Wigner-Seitz radius rs
V = N 4π/3 rs
3
rs = 3√3/4πn
A = N π rs
2
rs = 1/√πn
Density of states in k-space
Z(k) = 2 V/(2π)3
Z(k) = 2 A/(2π)2
Energy density of states D(ε) = dN/dε
D(ε) = Z(k)/V Δ3k(ε)/dε
= 1/4π3 4πk┴2dk┴/dε
= 1/π2 2m/ħ2 (ε – ε0) √2m/ħ2 1/2√(ε – ε0)
= 1/2π2 (2m/ħ2)3/2 √(ε – ε0)
D(ε) = Z(k)/A Δ2k(ε)/dε
= 1/2π2 2πk┴dk┴/dε
= 1/π √2m/ħ2 √(ε – ε0) √2m/ħ2 1/2√(ε – ε0)
= 2m/πħ2 θ(ε – ε0),
D(ε) = 1/2π2 (2m/ħ2)3/2 √(ε – ε0) 3d
D(ε) = 2m/πħ2 θ(ε – ε0) 2d
D(ε)
ε
εF
http://www.mtmi.vu.lt/pfk/funkc_dariniai/nanostructures/superlattice.htm
Dimensionality and density of states
The single-particle states are filling the k-space according to Pauli’s-principle till to a maximum value of kF and a
maximum energy εF (Fermi energy).
EF = E0 + ħ2kF2/2m
Occupied Fermi sphere
Fermi circle
2 DEG in accumulation layers
Advantage:
carriers from heavily doped areas collected in weakly doped regions
increase of mobility
Electron gases in a magnetic field
Classical Hall effect:
Ey = RH B jx,
Cross section area A = b d (d – depth of channel)
UH / b = RH B Ix / b d
= I B / e ns(Ugs)
RH ~ 1 / Ugs
Quantum-Hall EffectMeasurement in the gate channel of a FET structure at low temperature and strong magnetic field
K.v.Klitzing et al. 1981
RH
Ugs
h / 2e2
h / 3e2
h / 4e2
Quantization of Hall resistance in fractions of
h/e2 = 25.812,8 Ω with extreme accuracy
Electron gases in a magnetic field
3d: Fermi sphere splits off into concentrical Landau cylinders
Instead of a homogeneousoccupation in k-space there are only electron states on the cylinder surfaces
2d: Fermi circle splits of into concentrical Landau
halos
If there is such a change in the magnetic field thatthe number of cylinders/halos inside the occupied region changes – than there is a major redistribu-tion of all the electron states !!!
Density of states in the magnetic field
H = 0
En = E0 + ħ ωc (n + 1/2) + ħ ωL σz ;
Number of states per circle: η = e B / ħ
In 2d: RH = | UH | / I = B / e ns = B / e i η = h / e2 i
plateaus correspond to maximal filling
E
D(E)
2DEG and measurement of QHE
FET structure
2 DEG
Landau halos
DOS
Energies
Fractional QHE
Still lower T and still higher fields (Störmer, Tsui, Gossard 1982)
Plateaus corresponding to
i = 1/3; 2/3; 1/5; 2/5; 3/5; 4/5; 1/7; 2/7; 3/7; ... 1/9; ... 1/11; ... 1/13; ... 1/15; ...
Electrons form a new state of matter
6. Quantum Interference, Molecular Devices, and Self-Assembling
Aharonov-Bohm Effect:
Interferometer for electron wave functions in magnetic field
external magnetic field interpenetrating
a loop
phase shift between left- and right-
hand going electron wave
∫ dr’ A(r’) - ∫ dr’ A(r’) = ∫ dS’ ∂/∂r’ x A(r’) = ∫ dS’ B(r’) = Φ (1) (2) Constructive interference for Φ = 2 π n ħ / e = n Φ0
B
S
Experimental: periodic fluctuations of conductance on nanostructured Au loops which depend on cross sectional area
H
G
Logical circuits switched by magnetic fields
Molecular devices:
Single molecules (coronene) rotating in a self-assembled molecular mesh (interconnected trimesic acid on a graphitesurface)
Molecular wires; molecular diodes; ...
Help from Life Sciences: assembling; reproduction; repair; ...
7. Outlook
Nanoscience has a big future (very complex tasks can be solved with very little amount of material and energy)
Nanoscience is complex and interdisciplinary (physics, chemistry, engineering, life sciences, ...)
Nanoscience needs revolutionary ideas and enthuisasm
Nanoscience should attract the best young people
References
F.Capasso: Physics of Quantum Electron Devices, Springer 1990
H.Lüth; Surfaces and Interfaces of Solids, Springer 1993
Y.Murayama: Mesoscopic Systems, Wiley VCH 2001
H.-J.Butt, K.Graf, M.Kappl: Physics and Chemistry of Interfaces, Wiley VCH 2003
New books of Bushan