Vishay SiliconixSi4850EY

Document Number: 71146S09-1341-Rev. F, 13-Jul-09

www.vishay.com1

N-Channel Reduced Qg, Fast Switching MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21

Definition • TrenchFET® Power MOSFETs

• 175 °C Maximum Junction Temperature

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)

600.022 at VGS = 10 V 8.5

0.031 at VGS = 4.5 V 7.2

SO-8

S D

S D

S D

G D 5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free) Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

G

S

N-Channel MOSFET

Notes: a. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise notedParameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 60

VGate-Source Voltage VGS ± 20

Continuous Drain Current (TJ = 175 °C)aTA = 25 °C

ID8.5 6.0

ATA = 70 °C 7.1 5.0

Pulsed Drain Current IDM 40

Avalanche Current IAS 15

Single Pulse Avalanche Energy EAS 11 mJ

Maximum Power Dissipationa TA = 25 °CPD

3.3 1.7W

TA = 70 °C 2.3 1.2

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C

THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient at ≤ 10 s

RthJA36 45

°C/WSteady State 75 90

Maximum Junction-to-Foot (Drain) Steady State RthJF 17 20

www.vishay.com2

Document Number: 71146S09-1341-Rev. F, 13-Jul-09

Vishay SiliconixSi4850EY

Notes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise notedParameter Symbol Test Conditions Min. Typ. Max. Unit Static

Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60V

Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 3

Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA

Zero Gate Voltage Drain Current IDSSVDS = 60 V, VGS = 0 V 1

µAVDS = 60 V, VGS = 0 V, TJ = 55 °C 20

On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 40 A

Drain-Source On-State Resistancea RDS(on)

VGS = 10 V, ID = 6.0 A 0.018 0.022

ΩVGS = 10 V, ID = 6.0 A, TJ = 125 °C 0.031 0.037

VGS = 10 V, ID = 6.0 A, TJ = 175 °C 0.039 0.047

VGS = 4.5 V, ID = 5.1 A 0.025 0.031

Forward Transconductancea gfs VDS = 15 V, ID = 6.0 A 25 S

Diode Forward Voltagea VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 V

Dynamicb

Total Gate Charge Qg

VDS = 30 V, VGS = 10 V, ID = 6.0 A

18 27

nCGate-Source Charge Qgs 3.4

Gate-Drain Charge Qgd 5.3

Gate Resistance Rg VGS = 0.1 V, f = 5 MHz 0.5 1.4 2.4 Ω

Turn-On Delay Time td(on)

VDD = 30 V, RL = 30 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

10 20

ns

Rise Time tr 10 20

Turn-Off Delay Time td(off) 25 50

Fall Time tf 12 24

Source-Drain Reverse Recovery Time trr IF = 1.7 A, dI/dt = 100 A/µs 50 80

Output Characteristics

0

8

16

24

32

40

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS = 10 V thru 5 V

4 V

3 V

I D -

Dra

in C

urre

nt (

A)

VDS - Drain-to-Source Voltage (V)

Transfer Characteristics

0

8

16

24

32

40

0 1 2 3 4 5

- 55 °C25 °C

I D -

Dra

in C

urre

nt (

A)

VGS - Gate-to-Source Voltage (V)

TC = 150 °C

Document Number: 71146S09-1341-Rev. F, 13-Jul-09

www.vishay.com3

Vishay SiliconixSi4850EY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0 8 16 24 32 40

VGS = 4.5 V

RD

S(o

n) -

On-

Res

ista

nce

(Ω)

ID - Drain Current (A)

VGS = 10 V

0

2

4

6

8

10

0 4 8 12 16 20

ID = 6.0 V

VDS = 30 V

Qg - Total Gate Charge (nC)

VG

S -

Gat

e-to

-Sou

rce

Vol

tage

(V

)

2.0 2.51

10

50

0.00 0.5 1.0 1.5

TJ = 25 °CTJ = 175 °C

I S -

Sou

rce

Cur

rent

(A

)

VSD - Source-to-Drain Voltage (V)

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

200

400

600

800

1000

1200

1400

0 10 20 30 40 50 60

Crss

Coss

Ciss

C -

Cap

acita

nce

(pF

)

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

- 50 - 25 0 25 50 75 100 125 150 175

VGS = 10 V

ID = 6.0 AR

DS

(on)

- O

n-R

esis

tanc

e

(

Nor

mal

ized

)

TJ - Junction Temperature (°C)

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0 2 4 6 8 10

ID = 6.0 A

VGS - Gate-to-Source Voltage (V)

RD

S(o

n) -

On-

Res

ista

nce

(Ω)

www.vishay.com4

Document Number: 71146S09-1341-Rev. F, 13-Jul-09

Vishay SiliconixSi4850EY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see www.vishay.com/ppg?71146.

Threshold Voltage

- 1.2

- 0.8

- 0.4

0.0

0.4

0.8

- 50 - 25 0 25 50 75 100 125 150 175

ID = 250 µA

VG

S(t

h) V

aria

nce

(V)

TJ - Temperature (°C)

Single Pulse Power

0.01

0

1

50

20

30

10 10000.1

Time (s)

10

40

)W( re

woP

100

Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3 10 -2 1 10 60010-110-4 100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

evitceffE dezi la

mr oN

tneisnarT

ecnadepmI la

mre hT

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 75 °C/W

3. T JM - TA = PDMZthJA(t)

t 1 t 2

t 1 t 2

Notes:

4. Surface Mounted

P DM

Normalized Thermal Transient Impedance, Junction-to-Foot

10-3 10-2 1 1010-110-4

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

evit ceffE dezila

mroN

tneisnarT

e cnadepmI la

mrehT

Vishay SiliconixPackage Information

Document Number: 7119211-Sep-06

www.vishay.com1

DIMMILLIMETERS INCHES

Min Max Min Max

A 1.35 1.75 0.053 0.069

A1 0.10 0.20 0.004 0.008

B 0.35 0.51 0.014 0.020

C 0.19 0.25 0.0075 0.010

D 4.80 5.00 0.189 0.196

E 3.80 4.00 0.150 0.157

e 1.27 BSC 0.050 BSC

H 5.80 6.20 0.228 0.244

h 0.25 0.50 0.010 0.020

L 0.50 0.93 0.020 0.037

q 0° 8° 0° 8°

S 0.44 0.64 0.018 0.026

ECN: C-06527-Rev. I, 11-Sep-06DWG: 5498

431 2

568 7

HE

h x 45

C

All Leads

q 0.101 mm

0.004"LB A1

A

e

D

0.25 mm (Gage Plane)

SOIC (NARROW): 8-LEADJEDEC Part Number: MS-012

S

Application Note 826Vishay Siliconix

www.vishay.com Document Number: 7260622 Revision: 21-Jan-08

A

PP

LIC

AT

ION

NO

TE

RECOMMENDED MINIMUM PADS FOR SO-8

0.24

6

(6.2

48)

Recommended Minimum PadsDimensions in Inches/(mm)

0.172

(4.369)

0.15

2

(3.8

61)

0.04

7

(1.1

94)

0.028

(0.711)

0.050

(1.270)

0.022

(0.559)

Return to Index

Return to Index

Legal Disclaimer Noticewww.vishay.com Vishay

Revision: 08-Feb-17 1 Document Number: 91000

DisclaimerALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED