N- and P-Channel 60-V (D-S) MOSFET - Vishay … Siliconix Si4559ADY Document Number: 73624...

Vishay SiliconixSi4559ADY

Document Number: 73624S09-0393-Rev. B, 09-Mar-09

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N- and P-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21

Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested

APPLICATIONS • CCFL Inverter

PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.)

N-Channel 600.058 at VGS = 10 V 5.3

6 nC0.072 at VGS = 4.5 V 4.7

P-Channel - 600.120 at VGS = - 10 V - 3.9

8 nC0.150 at VGS = - 4.5 V - 3.5

S1 D1

G1 D1

S2 D2

G2 D2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4559ADY-T1-E3 (Lead (Pb)-free)Si4559ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET

D1

G1

S1

S2

G2

D2

P-Channel MOSFET

Notes: a. Based on TC = 25 °C.b. Surface Mounted on 1" x 1" FR4 board.c. t = 10 s.d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise notedParameter Symbol N-Channel P-Channel Unit

Drain-Source Voltage VDS 60 - 60V

Gate-Source Voltage VGS ± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

5.3 - 3.9

A

TC = 70 °C 4.3 - 3.2

TA = 25 °C 4.3b, c - 3.0b, c

TA = 70 °C 3.4b, c - 2.4b, c

Pulsed Drain Current (10 µs Pulse Width) IDM 20 - 25

Source Drain Current Diode CurrentTC = 25 °C

IS2.6 - 2.8

TA = 25 °C 1.7b, c - 1.7b, c

Pulsed Source-Drain Current ISM 20 - 25

Single Pulse Avalanche CurrentL = 0.1 mH

IAS 11 15

Single Pulse Avalanche Energy EAS 6.1 11 mJ

Maximum Power Dissipation

TC = 25 °C

PD

3.1 3.4

WTC = 70 °C 2 2.2

TA = 25 °C 2b, c 2b, c

TA = 70 °C 1.3b, c 1.3b, c

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol N-Channel P-Channel

Unit Typ. Max. Typ. Max.

Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 55 62.5 53 62.5°C/W

Maximum Junction-to-Foot (Drain) Steady State RthJF 33 40 30 37

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SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.a Max. Unit

Static

Drain-Source Breakdown Voltage VDSVGS = 0 V, ID = 250 µA N-Ch 60

VVGS = 0 V, ID = - 250 µA P-Ch - 60

VDS Temperature Coefficient ΔVDS/TJID = 250 µA N-Ch 55

mVID = - 250 µA P-Ch - 50

VGS(th) Temperature Coefficient ΔVGS(th)/TJID = 250 µA N-Ch - 6

ID = - 250 µA P-Ch 4

Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 1 3

VVDS = VGS, ID = - 250 µA P-Ch - 1 - 3

Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V N-Ch 100

nAP-Ch - 100

Zero Gate Voltage Drain Current IDSS

VDS = 60 V, VGS = 0 V N-Ch 1

µAVDS = - 60 V, VGS = 0 V P-Ch - 1

VDS = 60 V, VGS = 0 V, TJ = 55 °C N-Ch 10

VDS = - 60 V, VGS = 0 V, TJ = 55 °C P-Ch - 10

On-State Drain Currentb ID(on) VDS ≥ 5 V, VGS = 10 V N-Ch 20

AVDS ≤ - 5 V, VGS = - 10 V P-Ch - 25

Drain-Source On-State Resistanceb RDS(on)

VGS = 10 V, ID = 4.3 A N-Ch 0.046 0.058

ΩVGS = - 10 V, ID = - 3.1 A P-Ch 0.1 0.120

VGS = 4.5 V, ID = 3.9 A N-Ch 0.059 0.072

VGS = - 4.5 V, ID = - 0.2 A P-Ch 0.126 0.150

Forward Transconductanceb gfs VDS = 15 V, ID = 4.3 A N-Ch 15

SVDS = - 15 V, ID = - 3.1 A P-Ch 8.5

Dynamica

Input Capacitance Ciss N-ChannelVDS = 15 V, VGS = 0 V, f = 1 MHz

P-ChannelVDS = - 15 V, VGS = 0 V, f = 1 MHz

N-Ch 665

pF

P-Ch 650

Output Capacitance CossN-Ch 75

P-Ch 95

Reverse Transfer Capacitance Crss N-Ch 40

P-Ch 60

Total Gate Charge Qg

VDS = 30 V, VGS = 10 V, ID = 4.3 A N-Ch 13 20

nC

VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A P-Ch 14.5 22

N-ChannelVDS = 30 V, VGS = 4.5 V, ID = 4.3 A

P-ChannelVDS = - 30 V, VGS = - 4.5 V, ID = - 3.1 A

N-Ch 6 9

P-Ch 8 12

Gate-Source Charge Qgs N-Ch 2.3

P-Ch 2.2

Gate-Drain Charge Qgd N-Ch 2.6

P-Ch 3.7

Gate Resistance Rg f = 1 MHzN-Ch 2 3

ΩP-Ch 14 20


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Notes:a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.a Max. Unit

Dynamica

Turn-On Delay Time td(on) N-ChannelVDD = 30 V, RL = 8.8 Ω

ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω

P-ChannelVDD = - 30 V, RL = 12.5 Ω

ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω

N-Ch 15 25

ns

P-Ch 30 45

Rise Time trN-Ch 65 100

P-Ch 70 105

Turn-Off Delay Time td(off) N-Ch 15 25

P-Ch 40 60

Fall Time tfN-Ch 10 15

P-Ch 30 45

Turn-On Delay Time td(on) N-ChannelVDD = 30 V, RL = 8.8 Ω

ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω

P-ChannelVDD = - 30 V, RL = 12.5 Ω

ID ≅ - 2.4 A, VGEN = - 10 V, Rg = 1 Ω

N-Ch 10 15

P-Ch 10 15

Rise Time trN-Ch 15 25

P-Ch 13 20

Turn-Off Delay Time td(off) N-Ch 20 30

P-Ch 35 55

Fall Time tfN-Ch 10 15

P-Ch 30 45

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS TC = 25 °C N-Ch 2.6

AP-Ch - 2.8

Pulse Diode Forward Currenta ISMN-Ch 20

P-Ch - 25

Body Diode Voltage VSDIS = 1.7 A N-Ch 0.8 1.2

VIS = - 2 A P-Ch - 0.8 - 1.2

Body Diode Reverse Recovery Time trr

N-ChannelIF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C

P-Channel IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C

N-Ch 30 60ns

P-Ch 30 50

Body Diode Reverse Recovery Charge QrrN-Ch 32 50

nCP-Ch 35 60

Reverse Recovery Fall Time taN-Ch 25

nsP-Ch 16

Reverse Recovery Rise Time tbN-Ch 5

P-Ch 14

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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

2

4

6

8

10

12

14

16

18

20

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VGS = 10 thru 4 V

3 V

VDS - Drain-to-Source Voltage (V)

- D

rain

Cur

rent

(A

)I

D

0.040

0.045

0.050

0.055

0.060

0.065

0.070

0.075

0.080

0 2 4 6 8 10 12 14 16 18 20

VGS = 10 V

ID - Drain Current (A)

VGS = 4.5 V

RD

S(o

n) -

On-

Res

ista

nce

(mΩ

)

0

2

4

6

8

10

0 3 6 9 12 15

VDS = 30 VID = 4.3 A

- G

ate-

to-S

ourc

e Vo

ltage

(V

)

Qg - Total Gate Charge (nC)

VG

S

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

- 55 °C 0

1

2

3

4

5

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

25 °C

TC = 125 °C

VGS - Gate-to-Source Voltage (V)

- D

rain

Cur

rent

(A

)I

D

Crss0

200

400

600

800

1000

0 10 20 30 40 50 60

Coss

Ciss


C -

C

apac

itanc

e (p

F)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

- 50 - 25 0 25 50 75 100 125 150

VGS = 10 VID = 4.3 A

TJ - Junction Temperature (°C)

RD

S(o

n) -

On-

Res

ista

nce

(Nor

mal

ized

)


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Source-Drain Diode Forward Voltage

Threshold Voltage

1.0 1.4

1

10

20

0.0 0.2 0.4 0.6 0.8

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

- S

ourc

e C

urre

nt (

A)

I S

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

- 50 - 25 0 25 50 75 100 125 150

ID = 250 µA

TJ - Temperature (°C)

VG

S(t

h) (

V)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.04

0.05

0.06

0.07

0.08

0.09

0.10

0.11

0.12

0 2 4 6 8 10

I D = 4.3 A

V GS - Gate-to-Source V oltage (V)

RD

S(o

n) -

Dra

in-t

o-S

ourc

e O

n-R

esis

tanc

e (m

Ω)

0

15

25

5

10Pow

er (

W)

Time (s)

20

1 10000.10.01 10 100

Safe Operating Area

100

1

0.1 1 10 100

0.001

10

TA = 25 °C Single Pulse

- D

rain

Cur

rent

(A

)I D

0.1

*DS(on) Limited by R


* VGS minimum VGS at which RDS(on) is specified

0.01

1 ms

10 ms

100 ms

DC

100 µs

1 s10 s

>

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* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

1

2

3

4

5

6

25 50 75 100 125 150

I D -

Dra

in C

urre

nt (

A)

TC - Case Temperature (°C)

Power Derating

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0 25 50 75 100 125 150


Pow

er D

issi

patio

n (W

)

Single Pulse Avalanche Capability

1

100

10

TA - Time In Avalanche (s)

0.0010.00010.000010.000001

I C -

Pea

k A

vala

nche

Cur

rent

(A

)

TA =L . ID

BV - VDD


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Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3 10-2 1 10 60010-110-4 100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

Nor

mal

ized

Effe

ctiv

e T

rans

ient

The

rmal

Impe

danc

e

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 90 °C/W

3. TJM - TA = PDMZthJA(t)

t1t2

t1t2

Notes:

4. Surface Mounted

PDM

Normalized Thermal Transient Impedance, Junction-to-Case

10-3 10-2 1 1010-110-4

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5


Nor

mal

ized

Effe

ctiv

e T

rans

ient

The

rmal

Impe

danc

e

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

5

10

15

20

25

0 1 2 3 4 5 6 7 8

VGS = 10 thru 5 V


- D

rain

Cur

rent

(A

)I

D

3 V

4 V

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0 5 10 15 20 25

ID - Drain Current (A)

VGS = 4.5 V

VGS = 10 V

RD

S(o

n) -

On-

Res

ista

nce

(Ω)

0

2

4

6

8

10

0 3 6 9 12 15

VDS = 30 VID = 3.1 A

- G

ate-

to-S

ourc

e Vo

ltage

(V

)

Qg - Total Gate Charge (nC)

VG

S

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

5

10

15

20

25

0 1 2 3 4 5 6

TC = 125 °C

- 55 °C 25 °C


- D

rain

Cur

rent

(A

)I

D

Crss0

200

400

600

800

1000

0 10 20 30 40 50 60


C -

C

apac

itanc

e (p

F)

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

- 50 - 25 0 25 50 75 100 125 150 175

VGS = 10 VID = 3.1 A

TJ - Junction Temperature (°C)

RD

S(o

n) -

On-

Res

ista

nce

(Nor

mal

ized

)


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Source-Drain Diode Forward Voltage

Threshold Voltage

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 25 °C

20

10

1

VSD - Source-to-Drain Voltage (V)

- S

ourc

e C

urre

nt (

A)

I S

TJ = 150 °C

- 0.4

- 0.2

0.0

0.2

0.4

0.6

- 50 - 25 0 25 50 75 100 125 150

ID = 250 µA

Var

ianc

e (V

)V

GS

(th)

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0 2 4 6 8 10

ID = 3.1 A


RD

S(o

n) -

On-

Res

ista

nce

(Ω)

0

30

10

20Pow

er (

W)

Time (s)

40

1 6001010-110-3

50

10010-2

Safe Operating Area, Junction-to-Case

100

1

0.1 1 10 100

0.01

10

- D

rain

Cur

rent

(A

)I D

0.1TA = 25 °C

Single PulseP(t) = 10DC

ID(on)Limited

BVDSS Limited

P(t) = 1

P(t) = 0.1

P(t) = 0.01

P(t) = 0.001

P(t) = 0.0001

IDM Limited

Limitedby RDS(on)*

VDS - Drain-to-Source Voltage (V)* VGS minimum VGS at which RDS(on) is specified>

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* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

25 50 75 100 125 150

I D -

Dra

in C

urre

nt (

A)


Power Derating, Junction-to-Foot

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0 25 50 75 100 125 150


Pow

er D

issi

patio

n (W

)

Single Pulse Avalanche Capability

1

100

10

TA - Time In Avalanche (s)

0.0010.00010.000010.000001

I C -

Pea

k A

vala

nche

Cur

rent

(A

)

TA

L . IDBV - VDD

=


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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see www.vishay.com/ppg?73624.

Normalized Thermal Transient Impedance, Junction-to-Ambient

10 -3 10 -2 1 1 0 60010 -1 10 -4 100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5


Nor

mal

ized

Ef fe

ctiv

e T

rans

ient

T

herm

al Im

peda

nce

1. Duty Cycle, D =

2. Per Unit Base = R th J A = 85 °C/W

3. T JM - T A = P DM Z th J A (t )

t 1 t 2

t 1 t 2

Notes:

4. Surface Mounted

P DM

Normalized Thermal Transient Impedance, Junction-to-Foot

10-3 10-2 1 1010-110-4

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5


Nor

mal

ized

Effe

ctiv

e T

rans

ient

The

rmal

Impe

danc

e

Vishay SiliconixPackage Information

Document Number: 7119211-Sep-06

www.vishay.com1

DIMMILLIMETERS INCHES

Min Max Min Max

A 1.35 1.75 0.053 0.069

A1 0.10 0.20 0.004 0.008

B 0.35 0.51 0.014 0.020

C 0.19 0.25 0.0075 0.010

D 4.80 5.00 0.189 0.196

E 3.80 4.00 0.150 0.157

e 1.27 BSC 0.050 BSC

H 5.80 6.20 0.228 0.244

h 0.25 0.50 0.010 0.020

L 0.50 0.93 0.020 0.037

q 0° 8° 0° 8°

S 0.44 0.64 0.018 0.026

ECN: C-06527-Rev. I, 11-Sep-06DWG: 5498

431 2

568 7

HE

h x 45

C

All Leads

q 0.101 mm

0.004"LB A1

A

e

D

0.25 mm (Gage Plane)

SOIC (NARROW): 8-LEADJEDEC Part Number: MS-012

S

Application Note 826Vishay Siliconix

www.vishay.com Document Number: 7260622 Revision: 21-Jan-08

A

PP

LIC

AT

ION

NO

TE

RECOMMENDED MINIMUM PADS FOR SO-8

0.24

6

(6.2

48)

Recommended Minimum PadsDimensions in Inches/(mm)

0.172

(4.369)

0.15

2

(3.8

61)

0.04

7

(1.1

94)

0.028

(0.711)

0.050

(1.270)

0.022

(0.559)

Return to Index

Return to Index

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Revision: 08-Feb-17 1 Document Number: 91000

DisclaimerALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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N- and P-Channel 60-V (D-S) MOSFET - Vishay … Siliconix Si4559ADY Document Number: 73624...

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Transcript of N- and P-Channel 60-V (D-S) MOSFET - Vishay … Siliconix Si4559ADY Document Number: 73624...