• Low-capacitance, high-sensitivity, back-side-i l luminated design

• 950–1700 nm response

• Low operating bias, <5 V

• Custom devices available upon request

• Freespace optical communications

• Laser range finding

• Optical t ime domain reflectometry

• Optical coherence tomography

• Fluorescence measurements, spectroscopy, chromatography and electrophoresis

• Telecommunications

• LADAR/LIDAR

Applications

Features Metolius™ P-I-N Photodiodes

High-quantum efficiency P-I-N photodiode increases probability of detection and reduces false alarm rate.

The Metolius PX2-1000 series high-quantum efficiency P-I-N (HQE-PIN) InGaAs photodiodes can provide high-sensitivity NIR light detection with a large-diameter active area, minimal bias (< 5 V), and low dark currents.

This backside-illuminated photodetector provides both higher sensitivity and lower capacitance than competing frontside-illuminated photodiodes. While detector capacitance is minimized at a bias of 3 to 5 Volts, the device can operate with at least 90% of its specified responsivity with a fraction of the dark current at a bias of only 0.7 V.

For ease of integration, the HQE-PIN die is provided on a ceramic submount with or without a co-mounted temperature sensor. Packaging of these diodes is available in either a windowed TO-46 header or with a three-stage thermoelectric cooler (TEC) in a six-pin windowed TO-8 header.

PX2-1000 Series InGaAs P-I-N Photodiodes

Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862

PX2-1000 Series

Metolius™ InGaAs P-I-NPhotodiodes

2

Parameter Min Typical Max Units

Spectral Range, λ 950 1000–1600 1750 nm

Quantum Efficiency 0.82

0.96

0.85

0.98

1064 nm

1550 nm

Absolute Operating Temp. -73

200

-40 – 30

233 – 303

75

348

oC

K

Temperature Sensing Diode

Voltage and ΔV/K10.48 0.50

-2.18 mV/K0.51 V

1 Sourcing 10 µA and 298 K

S p e c i f i c a t i o n s — P X 2 - 1 0 0 0 S e r i e s

Active Diameter (Model) 1150-μm (PX21-SBXA) 650-μm (PX21-RBXA) 300-μm (PX21-QBXA)Units

Min Typical Max Min Typical Max Min Typical Max

Noise Spectral Density 27 20 13 fA/Hz1/2

Dark Current2 1.7 2.2 2.6 0.9 1.2 1.7 0.4 0.5 1.0 nA

Dark Current Dependence on Temperature3 0.30 0.30 0.30 dB/K

Total Capacitance4 38 12 2.9 pF

Max. InstantaneousOptical Input

500 est.

100 est.

50 est.

mW

2 VBias = 2 V, T=298 K3 240 K – 300 K4 VBias = 5 V

PX2-1000 Series

InGaAs P-I-N Metolius™Photodiodes

Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862

PX2-1000 Series

Metolius™ InGaAs P-I-NPhotodiodes

3

Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862

P X 2 1 - - - A

Device Device Type

Detector Format Diameter Package Window Revision

P = non-APD

photo-diode

X = P-I-N

2 = MetoliusTM

HQE-PIN

1 = Single

Element

Q=300µm

R=650µm

S=1150µm

B=Ceramic Submount

C=TO-46

K=TO-8 w/3-stage TEC

A=Flat

X=None

O r d e r i n g I n f o r m a t i o n

Other packaging options for the HQE-PIN photodiodes are available by request. Please contact Voxtel for specific ordering information and parts availability. Upon request, Voxtel will gladly assist customers in implementing the proper controls to ensure safe and reliable operation of detectors in their system.

P e r f o r m a n c e — P X 2 - 1 0 0 0 S e r i e s

0.0

0.20

0.40

0.60

0.80

1.0

-500 0 500 1000 1500 2000

Spatial Uniformity of Photodiode Response

Quantu

m E

ffic

iency

Spot Location (um)

0.0

0.20

0.40

0.60

0.80

1.0

800 1000 1200 1400 1600 1800

Photodiode Spectral Response

Quantu

m E

ffic

iency

Wavelength (nm)

Quantum Efficiency Uniformity Quantum Efficiency vs. Wavelength (2V)

4

PX2-1000 Series

InGaAs P-I-N Metolius™Submounted Photodiode Dies

M e c h a n i c a l I n f o r m a t i o n — S u b m o u n t e d D i e s

CCATHODE CATHODEANODE CATHODE CATHODEANODE

1490 μm x 1490 μm1490 μm x 1490 μm

1500 µm

C

1420 µm

950 µm

CATHODE CATHODEANODE CATHODE CATHODEANODE

1400 µm

1500 µm

C

1020 µm

770 µm

CATHODE CATHODEANODE CATHODE CATHODEANODE

1185 µm

1145 µm 1145 µm

300-micron Submounted Die

650-micron Submounted Die

1150-micron Submounted Die

The submount for the PX2-1000 series InGaAs P-I-N photodetector is 250-μm-thick aluminum-nitrate. The photodiodes are 350-μm thick.

Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862

5

Pinout1) TEC -4) TEC +9) Temp Sense -10) Temp Sense +11) PIN Anode (p)12) PIN Cathode (n)

PIN Plane

M e c h a n i c a l I n f o r m a t i o n — H e r m e t i c a l l y P a c k a g e d P h o t o d i o d e s

TO-8 Packages with 3-stage TEC

6.35 ± 0.1

PX2-1000 Series

Metolius™ InGaAs P-I-NHermetically Packaged Photodiodes

Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862

Pinout1) PIN Cathode2) PIN Anode3) Ground, T Sense -4) T Sense +

TO-46 Packages

2.5 10-11

3.0 10-11

3.5 10-11

4.0 10-11

4.5 10-11

5.0 10-11

5.5 10-11

6.0 10-11

6.5 10-11

0 2 4 6 8 10

#1#2#3

Capacitance (

F)

Reverse Bias (V)

6

Capacitance vs. Voltage—1150-micron device

Typical Impulse Response—1150-micron device at 2.3 V Reverse Bias

-5.0 10-3

0.0

5.0 10-3

1.0 10-2

1.5 10-2

2.0 10-2

2.5 10-2

0 0.5 1 1.5 2

Impulse Response of 1150-um Photodiodeat 2.3 V Reverse Bias

Response (

arb

)

Time (ns)

A d d i t i o n a l I n f o r m a t i o n

PX2-1000 Series

InGaAs P-I-N Metolius™Photodiodes

Voxtel Literature No. PX2-1000 Series InGaAs P-I-N Photodiodes, 20 July 2017 © Voxtel makes no warranty or representation regarding its products’ specific

application suitability and may make changes to the products described without notice.