ITO (80nm) orNi (5nm)/Au(10nm)

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ITO (80nm) orNi(5nm)/Au(10nm) Mg-doped p-type GaN (2um) Nucleation GaN (30nm) Thick p-GaN SPS: Si-doped n + In 0.23 Ga 0.77 N -GaN (5/5 Å) deposited on n+-InGaN–GaN SPS structures carrier concentration: 1*10 19 cm 3 from Hall measurement

description

ITO (80nm) orNi (5nm)/Au(10nm). SPS: Si-doped n + In 0.23 Ga 0.77 N - GaN (5/5 Å ). Mg-doped p-type GaN (2um). Nucleation GaN (30nm). Thick p- GaN. deposited on n+- InGaN–GaN SPS structures. carrier concentration: 1*10 19 cm 3 from Hall measurement. - PowerPoint PPT Presentation

Transcript of ITO (80nm) orNi (5nm)/Au(10nm)

Page 1: ITO (80nm) orNi (5nm)/Au(10nm)

ITO (80nm) orNi(5nm)/Au(10nm)

Mg-doped p-type GaN (2um)

Nucleation GaN (30nm)

Thick p-GaN

SPS: Si-doped n+ In0.23Ga0.77N -GaN (5/5 Å)

deposited on n+-InGaN–GaN SPS structures

carrier concentration: 1*10 19 cm3 from Hall measurement

Page 2: ITO (80nm) orNi (5nm)/Au(10nm)

Ψm

ΨB

X

Ec

Ev

Efm

SemiconductorMetal

Ef

X

Ec

Ev

Semiconductor

Ψm

Efm Ef

Metal

ΨB

ΨB=Ψm-X > 0 ΨB=Ψm-X ≤ 0

Schottky contact Ohmic contact

Results And Discussion


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