DTA experimental result shows that the oxidation start temperature of the post implanted synthetic diamond with either nitrogen ion or metal ion implantation have been improved from 730°C to 800-850°C and the improve extent is increasing with the ion does increasing, but there also exists an optimum implantation doses. Furthermore, the property of diamond transfer to graphite at high temperature have been also greatly improved, the metalation property for Ti implanted diamond have been tested by mill machine and tension testing after the sintering process, the result shows that the adhesive force of the ion implanted synthetic diamond with matrix have been increased by a factor of 2. The Ion Beam Enhanced Deposition (IBED) and double elemental ion implantation have been also applied with preliminary results being given in this paper.

3Q06

3Q07

The PSII-IM Device

Zhengkui Shang Southwestern Institute of Physics, P. 0. Box 432,

Chengdu, 610041, P.R. China

A new PSII device (PSII-IM) has been set up for development of industrial application in Southwestern Institute of Physics (SWIP). The vacuum chamber is made of stainless steel with 1000" diameter and 1070" height surrounded by multicusp permanent magnets. The device is equipped with a cryogenic, a diffusion and a mechanical pump. The background pressure is less than 8 x Pa. The plasma can be generated by multifilament discharge or RF discharge in gas. In addition, there are four metal plasma sources, six sputtering targets, cold and hot target supports. The PSII- BED experiments are carried out on the device. The pulsed negative high voltage is 10-90 kV, the repeated frequency is 10-500 Hz. Generally, plasma density (gas) is lo8 - 10'' ~ m ' ~ , metal plasma density is lo8 - 10'' ~ m - ~ , deposition rate is 0.1 - 1 .O n d s .

Research on Application of Ion Implantation in SWIP

Wei Pu Southwestern Institute of Physics, P. 0. Box 432,

Chengdu, Sichuan, 610041, P.R. China

In the last ten years, the research on application of ion implantation modification in SWIP of China has encompassed work in the areas of ion implantation equipment manufacture, material surface modification and its industrial applications including plasma source ion implantation (PSII) and ion beam ion implantation @IQ technologies. Implantation equipments with the function of implantation and enhanced-deposition have been constructed. MEVVA ion source for metal ion implantation and vacuum arc plasma source for metal plasma ion implantation and deposition have been employed successfully in IBII and PSII equipments respectively. Material surface modification have been carried out in different modes. The modified workpieces have been tested in some industrial field. In this paper the highlights of the above efforts on ion implantation research have been presented.

Ultra-Hard Crystalline p-C,N, Films Synthesized Using a Reactive RF

Magnetron Plasma Source

S . Xu, Han-shi Ki and S . Lee School of Science, National Institute of Education,

Nanyang Technological University, 469 Bukit Timah Road, Singapore, 25097.56

Yin-an Li Institute of Physics, Chinese Academy of Sciences,

Beijing, China

Crystalline P-C3N4 was successfully synthesized on Kbr(100), KCI( loo), Si( 100) and stainless steel substrates using a purpose-designed, high density, low temperature, RF Magnetron plasma source. The substrates were held at ambient temperature during deposition. The films were characterized using various analytical means. XRD, TEM and SEM analyses indicated that the films were of polychrystalline P-C,N, with the biggest crystal grain of over 20 pm. XPS and EDX results showed that the films were composed primarily of carbon and nitrogen. The measured interplanar spacings were in good agreement with the theoretical predictions. To out knowledge, this is the first time crystalline P-C,N4 was successfully

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synthesized by means of reactive RF Magnetron sputtering technique.

3Q09

Charging of Substrates Irradiated by Particle Beams

P.N. Guzdar, A.S. Sharma, and S.K. Guharay Institute for Plasma Research, University of Maryland,

College Park, MD 20742

Charging of a substrate due to irradiation of charged particle beams is a major problem in many applications of current interest, namely, ion implantation, etching, lithography, etc. In order to understand the underlying physical processes and identify the control parameters, a new approach is developed, both analytically and numerically, when the charged particle motion from the source is followed self-consistently and some simple considerations for beam-solid interactions are invoked. The problem is studied for three distinct irradiating species - positive ions, negative ions and neutrals. The time history of the charging potential with the variation of the beam parameters, namely, beam current and beam voltage, is examined. It has been noted that the charging potential of an isolated substrate is minimum for the negative ions, for example, a few volts for beam voltage of several tens of kV. The charging of the substrate reaches a steady state in a time scale of - few microsec in the case of negative ions. The situation is rather serious for positive ions when the substrate is noted to be charged to the beam potential and a steady state does not occur. In the case of irradiation by neutrals, the substrate is charged less than the case of the positive ions, but it is higher than the negative ion case. Thus, the negative ions seem more attractive for the aforementioned applications. Although the present study is done essentially in l-D case, the results explain the observations by Ishikawa [Rev. Sci. Instrum 67, 1410, 19951. Details of the work will be discussed.

3Q10

Cathodic Arc Plasma Density and Profile Measurements”

B.P. Wood and M.G. Tuszewski Los Alamos National Laboratory, Los Alamos NM 87545

D. Pesensen and F. Wessel University of California at Irvine, Irvine, CA 92697

We report a series of measurements of ion current density (with a Faraday cup) and integrated electron line density (with a microwave interferometer) for a cathodic arc derived plasma. The ion current measurements were made at various radii from the center of the plasma plume. We compare the differences in electron density and plasma radial profile between cathode materials (erbium and titanium), arc current (100 A to 400 A), pressure torr to torr), and the presence or absence of a series magnetic solenoid around the coaxial anode and cathode. We find that:

1. Higher pressure reduces the peak current density.

2. Ti yields a higher peak current density than Er.

3. Er yields a wider FWHM plasma profile than Ti.

4. Presence of a solenoid yields a higher peak current density and higher integrated line density.

density and higher integrated line density. 5. Higher arc current yields a higher peak current

*Work supported by U.S. Department of Energy

3Qll

TIN Prepared by Plasma Source Ion Implantation of Nitrogen into Ti as

a Diffusion Barrier for S K U Metallization

W. Wang, J. Booske, H.L. Liu and S.S. Gearhart ERC for Plasma Aided Manufacturing, University of

Wisconsin-Madison, Madison, WZ S. Bedell and W. Lanford

Dept. of Physics, State University of New York-Albany, Albany, NY 12222

TIN films prepared by plasma source ion implantation (PSII) of nitrogen into sputtered Ti films as adhesion promoter and diffusion barriers for SiICu metallization in ultra large scale integrated circuits (ULSIs) were investigated. The nitrogen-PSI1 process utilized a dose of IxlO” ions/cm2 and peak voltages of

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