May 2009

FDL100N

50F N-C

hannel MO

SFET

©2009 Fairchild Semiconductor CorporationFDL100N50F Rev. A

www.fairchildsemi.com1

UniFETTM

FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055Ω

Features• RDS(on) = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A

• Low gate charge ( Typ. 238nC)

• Low Crss ( Typ. 64pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS Compliant

DescriptionThese N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Thermal Characteristics

Symbol Parameter FDL100N50F UnitsVDSS Drain to Source Voltage 500 VVGSS Gate to Source Voltage ±30 V

ID Drain Current-Continuous (TC = 25oC) 100

A-Continuous (TC = 100oC) 60

IDM Drain Current - Pulsed (Note 1) 400 AEAS Single Pulsed Avalanche Energy (Note 2) 5000 mJIAR Avalanche Current (Note 1) 100 AEAR Repetitive Avalanche Energy (Note 1) 73.5 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns

PD Power Dissipation(TC = 25oC) 2500 W- Derate above 25oC 20 W/oC

TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC

TLMaximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds 300 oC

Symbol Parameter Min. Max. UnitsRθJC Thermal Resistance, Junction to Case - 0.05

oC/WRθCS Thermal Resistance, Case to Sink Typ. 0.1 -RθJA Thermal Resistance, Junction to Ambient - 30

*Drain current limited by maximum junction temperature

D

G

S

TO-264FDL SeriesG SD

FDL100N

50F N-C

hannel MO

SFET

FDL100N50F Rev. A www.fairchildsemi.com2

Package Marking and Ordering Information

Electrical Characteristics TC = 25oC unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking Device Package Reel Size Tape Width QuantityFDL100N50F FDL100N50F TO-264 - - 30

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC 500 - - V∆BVDSS ∆TJ

Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25oC - 0.5 - V/oC

IDSS Zero Gate Voltage Drain CurrentVDS = 500V, VGS = 0V - - 10

µAVDS = 400V, TC = 125oC - - 100

IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250µA 3.0 - 5.0 VRDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 50A - 0.043 0.055 ΩgFS Forward Transconductance VDS = 20V, ID = 50A (Note 4) - 95 - S

Ciss Input CapacitanceVDS = 25V, VGS = 0Vf = 1MHz

- 12000 - pFCoss Output Capacitance - 1700 - pFCrss Reverse Transfer Capacitance - 64 - pFQg(tot) Total Gate Charge at 10V

VDD = 400V, ID = 50AVGS = 10V

- 238 - nCQgs Gate to Source Gate Charge - 74 - nCQgd Gate to Drain “Miller” Charge - 95 - nC

td(on) Turn-On Delay TimeVDD = 250V, ID = 50ARG = 4.7Ω

- 63 - nstr Turn-On Rise Time - 186 - nstd(off) Turn-Off Delay Time - 202 - nstf Turn-Off Fall Time - 105 - ns

IS Maximum Continuous Drain to Source Diode Forward Current - - 100 AISM Maximum Pulsed Drain to Source Diode Forward Current - - 400 AVSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 100A - - 1.5 Vtrr Reverse Recovery Time VGS = 0V, ISD = 100A

dIF/dt = 100A/µs- 250 - ns

Qrr Reverse Recovery Charge - 1.5 - nC

Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1mH, IAS = 100A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C3. ISD ≤ 100A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDL100N

50F N-C

hannel MO

SFET

FDL100N50F Rev. A www.fairchildsemi.com3

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

0.1 1 100.5

1

10

100

300

*Notes: 1. 250µs Pulse Test 2. TC = 25oC

VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage[V]4 6 8 10

1

10

100

400

-55oC

150oC

*Notes: 1. VDS = 20V 2. 250µs Pulse Test

25oC

I D, D

rain

Cur

rent

[A]

VGS, Gate-Source Voltage[V]

0.0 0.5 1.0 1.51

10

100

300

*Notes:1. VGS = 0V2. 250µs Pulse Test

150oC

I S, R

ever

se D

rain

Cur

rent

[A]

VSD, Body Diode Forward Voltage [V]

25oC

0 50 100 150 200 2500.03

0.04

0.05

0.06

0.07

*Note: TC = 25oC

VGS = 20V

VGS = 10V

RD

S(O

N) [

Ω],

Dra

in-S

ourc

e O

n-R

esis

tanc

e

ID, Drain Current [A]

10-1 1 10 300

5000

10000

15000

20000

25000

30000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd

*Note: 1. VGS = 0V 2. f = 1MHz

Crss

Cap

acita

nces

[pF]

VDS, Drain-Source Voltage [V]0 50 100 150 200 250

0

2

4

6

8

10

*Note: ID = 50A

VDS = 100VVDS = 250VVDS = 400V

V GS,

Gat

e-So

urce

Vol

tage

[V]

Qg, Total Gate Charge [nC]

FDL100N

50F N-C

hannel MO

SFET

FDL100N50F Rev. A www.fairchildsemi.com4

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

*Notes: 1. VGS = 0V 2. ID = 1mA

BV D

SS, [

Nor

mal

ized

]D

rain

-Sou

rce

Bre

akdo

wn

Volta

ge

TJ, Junction Temperature [oC]-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

*Notes: 1. VGS = 10V 2. ID = 50A

RD

S(on

), [N

orm

aliz

ed]

Dra

in-S

ourc

e O

n-R

esis

tanc

e

TJ, Junction Temperature [oC]

1 10 100 10000.01

0.1

1

10

100

100030µs

100µs1ms

10ms

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]

Operation in This Area is Limited by R DS(on)

*Notes: 1. TC = 25oC

2. TJ = 150oC 3. Single Pulse

DC

25 50 75 100 125 1500

20

40

60

80

100

120

I D

, Dra

in C

urre

nt [A

]

TC, Case Temperature [oC]

10-5 10-4 10-3 10-2 10-1 10.0001

0.001

0.01

0.1

0.01

0.1

0.2

0.05

0.02

*Notes: 1. ZθJC(t) = 0.05oC/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t)

0.5

Single pulse

Ther

mal

Res

pons

e [Z

θJC]

Rectangular Pulse Duration [sec]

t1

PDM

t2

FDL100N

50F N-C

hannel MO

SFET

FDL100N50F Rev. A www.fairchildsemi.com5

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDL100N

50F N-C

hannel MO

SFET

FDL100N50F Rev. A www.fairchildsemi.com6

Peak Diode Recovery dv/dt Test Circuit & Waveforms

D U T

V D S

+

_

D r i v e rR G

S a m e T y p e a s D U T

V G S • d v / d t c o n t r o l l e d b y R G

• I S D c o n t r o l l e d b y p u l s e p e r i o d

V D D

LI S D

1 0 VV G S

( D r i v e r )

I S D

( D U T )

V D S

( D U T )

V D D

B o d y D i o d eF o r w a r d V o l t a g e D r o p

V S D

I F M , B o d y D i o d e F o r w a r d C u r r e n t

B o d y D i o d e R e v e r s e C u r r e n t

I R M

B o d y D i o d e R e c o v e r y d v / d t

d i / d t

D =G a t e P u l s e W i d t hG a t e P u l s e P e r i o d

- - - - - - - - - - - - - - - - - - - - - - - - - -

D U T

V D S

+

_

D r i v e rR G

S a m e T y p e a s D U T

V G S • d v / d t c o n t r o l l e d b y R G

• I S D c o n t r o l l e d b y p u l s e p e r i o d

V D D

LLI S D

1 0 VV G S

( D r i v e r )

I S D

( D U T )

V D S

( D U T )

V D D

B o d y D i o d eF o r w a r d V o l t a g e D r o p

V S D

I F M , B o d y D i o d e F o r w a r d C u r r e n t

B o d y D i o d e R e v e r s e C u r r e n t

I R M

B o d y D i o d e R e c o v e r y d v / d t

d i / d t

D =G a t e P u l s e W i d t hG a t e P u l s e P e r i o d

- - - - - - - - - - - - - - - - - - - - - - - - - -D =G a t e P u l s e W i d t hG a t e P u l s e P e r i o d

- - - - - - - - - - - - - - - - - - - - - - - - - -

FDL100N

50F N-C

hannel MO

SFET

FDL100N50F Rev. A www.fairchildsemi.com7

Mechanical Dimensions

Dimensions in Millimeters

FDL100N

50F MO

SFET

FDL100N50F Rev. A www.fairchildsemi.com8

TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

Auto-SPM™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™EcoSPARK®

EfficentMax™EZSWITCH™ * ™*

Fairchild®

Fairchild Semiconductor®FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™FlashWriter® *FPS™

F-PFS™FRFET®

Global Power ResourceSM

Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MillerDrive™MotionMax™Motion-SPM™OPTOLOGIC®

OPTOPLANAR®®

PDP SPM™Power-SPM™

PowerTrench®

PowerXS™Programmable Active Droop™QFET®

QS™Quiet Series™RapidConfigure™

™Saving our world, 1mW /W /kW at a time™SmartMax™SMART START™SPM®

STEALTH™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS™SyncFET™Sync-Lock™

®*

The Power Franchise®

®

TinyBoost™TinyBuck™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TriFault Detect™TRUECURRENT™*µSerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™XS™

tm

®

tm

tm

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I40