Fast oxygen exchange kinetics of pore-free Bi1−xSrxFeO3−δ thin films
Transcript of Fast oxygen exchange kinetics of pore-free Bi1−xSrxFeO3−δ thin films
16530 Phys. Chem. Chem. Phys., 2011, 13, 16530–16533 This journal is c the Owner Societies 2011
Cite this: Phys. Chem. Chem. Phys., 2011, 13, 16530–16533
Fast oxygen exchange kinetics of pore-free Bi1�xSrxFeO3�d thin filmsw
Anja Wedig,* Rotraut Merkle, Benjamin Stuhlhofer, Hanns-Ulrich Habermeier,
Joachim Maier and Eugene Heifets
Received 24th May 2011, Accepted 8th August 2011
DOI: 10.1039/c1cp21684h
The oxygen incorporation/extraction kinetics of the potential
solid oxide fuel cell (SOFC) cathode material Bi1�xSrxFeO3�d
with x = 0.5 and 0.8 was studied by electrochemical impedance
spectroscopy on geometrically well-defined pore-free thin film
electrodes. The oxygen exchange rate was found to be higher than
that of La1�xSrxFeO3�d and—among cobalt-free perovskites—
only surpassed by Ba1�xSrxFeO3�d which is however known to
be unstable in a SOFC environment.
Mixed-conducting oxides have emerged as preferential candidates
for solid oxide fuel cell cathode materials, since oxygen
reduction can proceed on the whole electrode surface (‘‘bulk
path’’)1 instead of being limited to the electrode–electrolyte–air
triple phase boundary. Especially oxygen-deficient perovskite-
type oxides such as La1�xSrxMnO3�d or A1�xSrxCo1�yFeyO3�d(A = La or Ba) have been the subject of intense studies focusing
not only on application-related aspects, but also on a funda-
mental understanding of the mechanism of surface oxygen
incorporation. The cathode reaction often determines the
overall cell efficiency, particularly at low temperatures, since
its activation energy is typically higher than that of electrolyte
conductivity and anode reaction.2–13 Up to date, the investigations
of the mechanisms involved indicated that not only a high concen-
tration of oxygen vacancies,14 but also a high vacancy mobility
are highly beneficial for fast oxygen incorporation kinetics.13
The perovskite with the highest oxygen exchange rate,
Ba0.5Sr0.5Co0.8Fe0.2O3�d, has not made its way into applications
due to significant drawbacks such as a high reactivity towards
common SOFC electrolytes15–17 and CO218 as well as the
detrimental structural transformation into a hexagonal
perovskite phase between 850 1C and 900 1C.19,20 We expect
that the substitution of Ba by Bi might be a promising
approach towards an alternative high-performance SOFC
cathode material. Owing to a lower basicity compared to
Ba2+, Bi3+ is assumed to increase the chemical stability. In
addition, the high polarizability of Bi3+ attributable to its 6s
lone pair can be expected to provide the required high mobility
of oxygen vacancies. Based on these considerations and further
encouraged by first tentative results, we proposed Bi-containing
perovskites as SOFC cathode materials.21,22 High ionic
conductivities at 800 1C of 0.016 S cm�1 for Bi0.5Sr0.5FeO3�d23
and 0.005–0.022 S cm�1 for Bi0.4Sr0.6FeO3�d and
Bi0.7Sr0.3FeO3�d24 were extracted from permeation experiments.
Recently, area specific resistances (ASR) as low as
0.14–0.49 O cm2 at 700 1C have been measured on porous thick
film electrodes of Bi1�xSrxFeO3�d (x=0.3, 0.5 and 0.8).23,25,26
However, a reliable comparison with ASR values of related
perovskites or any specific conclusions about the oxygen
incorporation mechanism are not possible because of the
complex and hardly reproducible morphology of the porous
electrode films investigated. For this reason, we studied the
oxygen incorporation kinetics on geometrically well-defined
pore-free thin film electrodes of Bi1�xSrxFeO3�d with x = 0.5
and 0.8 in two different measuring arrangements.
Before dealing with the electrocatalytic activity for oxygen
incorporation, let us briefly describe the Bi1�xSrxFeO3�d bulk
properties. For 0.2 r x r 0.8 the materials crystallize in the
cubic perovskite structure with the lattice constant decreasing
from 3.95 A to 3.91 A upon increasing the Sr content.24,27,28
Thermogravimetry in combination with cerimetric titration to
determine a reference point yields the oxygen stoichiometry
(Fig. 1a). While for Bi0.5Sr0.5FeO3�d iron is essentially Fe3+,
Bi0.2Sr0.8FeO3�d contains up to 50% Fe4+ depending on the
applied conditions, and the oxygen vacancy concentration is
approximately p (p(O2))�0.05. As a consequence, the electronic
conductivity (Btotal conductivity) is rather low for
Bi0.5Sr0.5FeO3�d (Fig. 1b). Local lattice distortions as evidenced
by extended X-ray adsorption fine structure (EXAFS)
measurements29 may also contribute to this.
Fig. S1 (ESIw) shows the XRD patterns of 150 nm thin
Bi1�xSrxFeO3�d (x = 0.5 and 0.8) films grown by pulsed laser
deposition (PLD) on Y2O3-doped ZrO2 (YSZ) single crystals
(for experimental details, see ESIw). PLD targets were prepared
from the phase-pure stoichiometric powders obtained by solid
state reaction. Both compositions were found to form polycrystalline
films with a cubic perovskite structure, and no secondary
phases could be detected in the X-ray diffraction patterns.
The pore-free film growth was confirmed by SEM (Fig. S2 and
S3, ESIw). Quantitative analysis by means of ICP-OES
indicated the actual compositions (Bi0.48Sr0.52)1.01(1)FeO3�dand (Bi0.18Sr0.82)1.00(2)FeO3�d (average values derived from
two samples produced in the same PLD run).
Max Planck Institute for Solid State Research, Heisenbergstrasse 1,70569 Stuttgart, Germany. E-mail: [email protected],[email protected]; Fax: +49 711 689 1722;Tel: +49 711 689 1771w Electronic supplementary information (ESI) available: Experimentalprocedures, definition of TEC, XRD/SEM of thin films, EIS ofBi0.2Sr0.8FeO3�d, equivalent circuit, temperature dependence of Cchem.See DOI: 10.1039/c1cp21684h
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Electrochemical impedance spectroscopy (EIS) was performed
on YSZ crystals coated on both sides with a 150 nm thin film
of Bi1�xSrxFeO3�d (‘‘macroscopic samples’’) as well as on
arrays of circular microelectrodes with 20–100 mm diameter
and 150 nm thickness (obtained by photolithography and Ar
ion beam etching) on YSZ with an extended Ag paste counter
electrode on the backside (for details see e.g. ref. 9). A fine Au
mesh (1000 wires inch�1, Precision Eforming, USA) was
attached as a current collector to both large faces of the
macroscopic samples. For the microelectrode samples, one
of the microelectrodes and the Ag counter electrode were
contacted by Pt/Ir probe needles (tip radius: 2.5 mm, Moser
Company, USA). Impedance spectra were recorded using an
Alpha High Resolution Dielectric Analyser (Novocontrol,
Germany) with an AC amplitude of 10 mV. XRD analysis
of the thin film samples after EIS measurements showed no
reaction between the electrode film and the electrolyte YSZ, in
agreement with XRD investigations of powder mixtures of
Bi1�xSrxFeO3�d (x= 0.5 or 0.8) and YSZ annealed for 12 h at
800 1C which did not reveal any reaction products.
The impedance spectra are typically dominated by one
semicircle at low frequencies (Fig. 2 and Fig. S4, ESIw). ForBi0.5Sr0.5FeO3�d, an additional pronounced arc at intermediate
frequencies could be detected in microelectrode measurements
(Fig. 2b), which is most probably caused by sheet resistance
resulting from the low electronic conductivity and the electrode’s
extreme aspect ratio (150 nm thickness but 60 mm diameter).z30The equivalent circuit used for analysis (Fig. S5, ESIw) has
been derived from a general model for mixed-conducting
electrodes31 assuming that oxygen incorporation mainly occurs
via the bulk path and is limited by the surface reaction rather
than by oxygen transport through the electrode bulk.32 The
resistance Rs corresponding to the diameter of the low-
frequency semicircle is attributed to the oxygen exchange at
the electrode surface, and the associated large capacitance is
interpreted as ‘‘chemical capacitance’’ Cchem originating from
oxygen stoichiometry changes within the electrode. The
appearance of the large Cchem combined with a high ionic
conductivity (410�3 S cm�1 at 800 1C for Bi1�xSrxFeO3�d,
0.3 r x r 0.6)23,24 and the pronounced p(O2) dependence of
Rs (see below) strongly support this interpretation. From the
good agreement between (high-temperature) Rs from macro-
scopic and microscopic measurements, respectively, it can be
concluded that neither the Au mesh nor the Pt/Ir probe needle
exhibits any catalytic effect on the oxygen incorporation.
From the impedance spectra of both macroscopic and
microscopic samples, Rs was determined to be 4.8 O cm2 for
Bi0.5Sr0.5FeO3�d and 2.8 O cm2 for Bi0.2Sr0.8FeO3�d at 750 1C
and p(O2) = 0.2 bar. Note that these values refer to the actual
electrode surface in contrast to the ASR of porous films
typically based on the ‘‘footprint’’ area of the electrode. The
estimated real surface area of a porous Bi0.5Sr0.5FeO3�d film
(annealed at 1000 1C) is about a factor of 30 larger,y thus thereported ASR of 0.09 O cm2 at 750 1C26 is in good agreement
with our results for pore-free PLD thin films.
The effective surface exchange rate constant kq
kq ¼ kBT
4e2RscOð1Þ
(kB: Boltzmann constant, T: temperature, e: elementary
Fig. 1 Bulk properties of Bi1�xSrxFeO3�d. (a) Temperature and
p(O2) dependence of the oxygen deficiency d (powder samples).
(b) Temperature dependence of the electrical conductivity at
p(O2) = 0.2 bar (sintered pellets).
Fig. 2 Impedance spectra of pore-free 150 nm thin Bi0.5Sr0.5FeO3�dfilms measured on (a) a macroscopic sample (YSZ single crystal coated
on both sides) and (b) a microelectrode with 60 mm diameter on a YSZ
single crystal.
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16532 Phys. Chem. Chem. Phys., 2011, 13, 16530–16533 This journal is c the Owner Societies 2011
charge, Rs: area specific surface resistance, cO: concentration
of occupied oxygen lattice sites)33 amounts to 6.4 � 10�7 cm s�1
and 1.1 � 10�6 cm s�1 for Bi0.5Sr0.5FeO3�d and
Bi0.2Sr0.8FeO3�d at 750 1C and p(O2) = 0.2 bar. In the
literature, an effective surface exchange rate constant kd of
5.4 � 10�3 cm s�1 at 750 1C was obtained for a ceramic
Bi0.5Sr0.5FeO3�d sample by conductivity relaxation (sample
density not indicated).23 The relation between kq determined
from electrochemical measurements and kd received via a
chemical experiment can be expressed by the thermodynamic
factor oO
kd ¼ oOkq ¼ cO
RT
@mO@cO
kq ð2Þ
(R: gas constant, mO: chemical potential of oxygen).34 From
d(p(O2)) (Fig. 1a), kd is calculated to be 0.6 � 10�3 cm s�1 for
Bi0.5Sr0.5FeO3�d at 750 1C and p(O2) = 0.2 bar.
Activation energies for Rs of 1.1 eV for Bi0.5Sr0.5FeO3�d and
1.2 eV for Bi0.2Sr0.8FeO3�d were measured on the macroscopic
samples (Fig. 3a). The activation energies obtained on micro-
electrodes increase upon decreasing temperature. The reason
for this observation is not yet clear, but there seems to be a
general tendency towards overestimation of the activation
energy of Rs by microelectrode measurements also reported
for Ba- or La-containing compounds.9,13 The p(O2) dependence
of Rs follows Rs p (p(O2))�n with average n values of 0.56 for
Bi0.5Sr0.5FeO3�d and 0.63 for Bi0.2Sr0.8FeO3�d (Fig. 3b). The
temperature and p(O2) dependence of the high-frequency axis
intercept detected on macroscopic and microelectrode samples is
largely consistent with that of the ionic conductivity of YSZ.35
The chemical capacitances Cchem
Cchem ¼4F2
Vm
@cO@mO
ð3Þ
(F: Faraday constant, Vm: molar volume at the considered
temperature)4 of Bi1�xSrxFeO3�d obtained from impedance
spectra are lower than those of related (Ba, Sr, La)(Fe, Co)O3�dperovskites (Table 1) and depend only weakly on temperature
or p(O2) (Fig. S6, ESIw). They may be compared to Cchem
calculated using d(p(O2)) from Fig. 1a which yields
0.4 kF cm�3 and 2.5 kF cm�3 for Bi0.5Sr0.5FeO3�d and
Bi0.2Sr0.8FeO3�d at 750 1C and p(O2) = 0.2 bar. Cchem of
the bulk materials is therefore by a factor of 3–4 larger than
that of thin films. A similar difference has been reported
previously.4
A low Cchem is expected to result in a low thermochemical
expansion coefficient (TEC), since the expansion of the
perovskite lattice upon heating is largely a consequence of
oxygen vacancy formation. A low TEC is favourable for
SOFC applications as it reduces the thermochemical expansion
mismatch to the electrolyte and thus increases the durability of
the cell. Our measurements (Fig. 4) show that the mean TEC
of Bi0.5Sr0.5FeO3�d, TECw, is comparable to that of
La0.6Sr0.4FeO3�d (Table 1), whereas Bi0.2Sr0.8FeO3�d is subject
to stronger thermochemical expansion, in particular at high
p(O2).
In Table 1 data for several Fe-based perovskite cathode
materials are compiled. The ASR of Bi0.5Sr0.5FeO3�d and
Bi0.2Sr0.8FeO3�d is higher than that of Ba0.5Sr0.5FeO3�d, but
comparable to SrFeO3�d and lower than for La0.6Sr0.4FeO3�d.
While the low electronic conductivity (particularly for
Bi0.5Sr0.5FeO3�d) may require an additional current collecting
layer, other problems (carbonate formation in
Ba0.5Sr0.5FeO3�d similar to Ba0.5Sr0.5Co0.8Fe0.2O3�d, phase
transformations in SrFeO3�d40) are reduced in the Bi-based
perovskites. Table 1 further indicates that as a general trend
the oxygen exchange rate increases with increasing ionic
(oxygen vacancy) conductivity, well in line with results obtained
for Ba1�xSrxCoyFe1�yO3�d perovskites.13
To summarize, this study on morphologically well-defined
pore-free thin film electrodes shows that a partial occupation
of the perovskite A site by the highly polarizable Bi3+
Fig. 3 Surface oxygen incorporation resistance Rs of
Bi1�xSrxFeO3�d with x = 0.5 and 0.8 from impedance spectra.
(a) Temperature dependence at p(O2) = 0.2 bar. (b) Oxygen partial
pressure dependence at 750 1C. Solid symbols: macroscopic samples,
open symbols: microelectrode samples.
Table 1 Comparison of Rs and Cchem from (microcontact) impedancemeasurements on pore-free PLD thin films, sion (wwfrom tracer diffu-sion experiments, zzfrom permeation experiments) and TEC at 750 1Cand p(O2) = 0.2–0.5 bar for perovskite-type SOFC cathode materials
Rs/O cm2Cchem/kF cm�3
sion/S cm�1 TEC=10�6 K�1
Ba0.5Sr0.5FeO3�d 1.013 1.821 0.15ww,13 B2236
SrFeO3�d 3.613 2.121 0.03ww,13 B2137
Bi0.2Sr0.8FeO3�d 2.8 0.8 16a–21b
Bi0.5Sr0.5FeO3�d 4.8 0.1 0.006zz,23 14a,b
La0.6Sr0.4FeO3�d 8.29 1.39 1338
La0.5Sr0.5FeO3�d 0.005zz,33
La0.75Sr0.25FeO3�d B0.001ww,39
a measured at p(O2) = 10�3 bar. b measured at p(O2) = 1 bar.
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improves the surface oxygen exchange kinetics over the respective
La1�xSrxFeO3�d perovskites despite a decrease in the materials’
electronic conductivity. In contrast to Ba substitution, this can
be achieved without increasing the danger of detrimental
surface carbonate formation. Further experimental and quantum-
chemical studies on the detailed oxygen incorporation reaction
mechanism are underway.
Acknowledgements
We thank G. Christiani and S. Schmid for assistance with
PLD and lithography/ion beam etching, G. Gotz for XRD,
B. Fenk and T. Reindl for SEM/EDX, P. Lupetin and
K. Adepalli for SPS (all MPI for Solid State Research,
Stuttgart), and A. Meyer for ICP-OES (MPI for Intelligent
Systems, Stuttgart). This study was in part supported by GIF
under contract No. 1025-5.10/2009.
Notes and references
z The alternative assignment of the intermediate-frequency contribu-tion in the Bi0.5Sr0.5FeO3�d microelectrode spectra to processes at theelectrode–electrolyte interface is questionable, since the correspondingcapacitance of 5.2 � 10�4 F cm�2 is more than one order of magnitudehigher than a typical interfacial capacitance.13,32 This indicates thatthe intermediate-frequency feature rather arises from sheet resistancedue to the low electrical conductivity of Bi0.5Sr0.5FeO3�d. A roughestimate gives a resistance contribution of 29 kO from the electronicconductivity (Fig. 1a) of a 150 nm thick strip with 30 mm in length andwidth which is in good agreement with the diameter of theintermediate-frequency semicircle in Fig. 2b. The intermediate-frequency resistance exhibits an activation energy of 0.28 eV and isproportional to (p(O2))
�0.20, in fair agreement with the electricalresistivity being proportional to (p(O2))
�0.23 and having an activationenergy of 0.08 eV between 550 1C and 750 1C. Detailed numericalsimulations are underway.41
y The actual surface of a porous electrode was estimated from the totalparticle perimeter in an area cross-section derived from SEM imagesusing an image processing program (ImageJ) multiplied by theelectrode thickness.
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