EMM5079ZB ED1-2 - sedi.co.jp · Output Power at 1dB G.C.P. P1dB IDD ... Zs=Zl=50ohm 21.5*2 24*2...
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X / Ku-Band Power Amplifier MMIC EMM5079ZB 1 Edition 1.2 June 2010 FEATURES •Output Power; P1dB = 24.0 dBm (Typ.) •High Gain; GL = 23 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω •QFN 20pin Plastic Mold Package(ZB) DESCRIPTION The EMM5079ZB is a wide band power amplifier MMIC that contains a four stage amplifier, internally matched, for standard communications band in 10.0 to 15.4GHz frequency range. This product is well suited for point-to-point radio and VSAT applications. SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Symbol Unit Drain-Source Voltage V DD V Gate-Source Voltage V GG V Input Power P in dBm Storage Temperature T stg o C RECOMMENDED OPERATING CONDITIONS Item Symbol Unit Drain-Source Voltage V DD V Input Power P in dBm Operating Case Temperature Top o C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃) Unit Min. Typ. Max. Frequency Range f V DD =6V 10.0 - 15.4 GHz Output Power at 1dB G.C.P. P 1dB I DD (DC)=350mA typ. 23 *1 25.5 *1 - dBm Zs=Zl=50ohm 21.5 *2 24 *2 Power Gain at 1dB G.C.P. G 1dB 19 22 - dB Power-added Efficiency at 1dB G.C.P. ηadd *1 : f=10.0~11.7GHz - 17 *1 - % *2 : f=11.7~15.4GHz - 15 *2 - Third Order Intermodulation *3 IM3 *3 *3 : ∆f=10MHz , -25 *1 -32 *1 - dBc 2-Tone Test, -30 *2 -40 *2 - Drain Current at 1dB G.C.P. IDD Pout=15dBm S.C.L. - 380 500 mA Input Return Loss (at Pin=-20dBm) RL in - 10 - dB Output Return Loss (at Pin=-20dBm) RL out - 10 - dB G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level ESD Note : Based on JEDEC JESD22-A114C (C=100pF, R=1.5kohm) CASE STYLE MSL Note : Based on IPC/JEDEC J-STD-020C RoHs Compliance ORDERING INFORMATION Part Number EMM5079ZB EMM5079ZBT <=6 -40 to +85 Condition Yes Limits Test Conditions Class 0 =< 250V ZB 3 Item Symbol Rating -55 to +125 10 -3 16 <=6 500 pcs 500 pcs./Reel × 1 Reel=500 pcs./Pack 490 pcs/Tray X 10 Trays=4900pcs/Packing Order Unit Packing No Limitation
Transcript of EMM5079ZB ED1-2 - sedi.co.jp · Output Power at 1dB G.C.P. P1dB IDD ... Zs=Zl=50ohm 21.5*2 24*2...
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
1Edition 1.2June 2010
FEATURES•Output Power; P1dB = 24.0 dBm (Typ.)•High Gain; GL = 23 dB(Typ.)•Wide Frequency Band ; 10.0 – 15.4 GHz•Impedance Matched Zin/Zout = 50Ω•QFN 20pin Plastic Mold Package(ZB)
DESCRIPTIONThe EMM5079ZB is a wide band power amplifier MMIC thatcontains a four stage amplifier, internally matched, for standardcommunications band in 10.0 to 15.4GHz frequency range.This product is well suited for point-to-point radio and VSATapplications.SEDI’s stringent Quality Assurance Program assures thehighest reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGItem Symbol Unit
Drain-Source Voltage VDD VGate-Source Voltage VGG VInput Power Pin dBmStorage Temperature Tstg
oC
RECOMMENDED OPERATING CONDITIONSItem Symbol Unit
Drain-Source Voltage VDD VInput Power Pin dBmOperating Case Temperature Top oC
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25)Unit
Min. Typ. Max.Frequency Range f VDD=6V 10.0 - 15.4 GHzOutput Power at 1dB G.C.P. P1dB IDD(DC)=350mA typ. 23*1 25.5*1 - dBm
Zs=Zl=50ohm 21.5*2 24*2
Power Gain at 1dB G.C.P. G1dB 19 22 - dBPower-added Efficiency at 1dB G.C.P. ηadd *1 : f=10.0~11.7GHz - 17*1 - %
*2 : f=11.7~15.4GHz - 15*2 -Third Order Intermodulation*3 IM3*3 *3 : ∆f=10MHz , -25*1 -32*1 - dBc
2-Tone Test, -30*2 -40*2 -Drain Current at 1dB G.C.P. IDD Pout=15dBm S.C.L. - 380 500 mAInput Return Loss (at Pin=-20dBm) RLin - 10 - dBOutput Return Loss (at Pin=-20dBm) RLout - 10 - dB
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
ESDNote : Based on JEDEC JESD22-A114C (C=100pF, R=1.5kohm)
CASE STYLE
MSLNote : Based on IPC/JEDEC J-STD-020C
RoHs ComplianceORDERING INFORMATION
Part NumberEMM5079ZB
EMM5079ZBT
<=6-40 to +85
Condition
Yes
LimitsTest Conditions
Class 0 =< 250V
ZB
3
Item Symbol
Rating
-55 to +125
10-316
<=6
500 pcs 500 pcs./Reel × 1 Reel=500 pcs./Pack490 pcs/Tray X 10 Trays=4900pcs/Packing
Order Unit PackingNo Limitation
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
2Edition 1.2June 2010
Output Power vs. Frequency Output Power, Drain Current vs. Input Power
Power Added Efficiency vs. Frequency
@VDD=6V, IDD(DC)=350mA
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28
30
9 9.5 10 10.5 11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5
Frequency [GHz]
Out
put P
ower
[dB
m]
Pin=-8dBm -4dBm 0dBm 4dBm P1dB
@VDD=6V, IDD(DC)=350mA
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Input Power [dBm]
Out
put P
ower
[dB
m]
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100
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Dra
in C
urre
nt [
mA
]
10GHz 12GHz 14GHz 15.4GHz
@VDD=6V, IDD(DC)=350mA
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9 9.5 10 10.5 11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5
Frequency [GHz]
Pow
er A
dded
Effi
cien
cy [
%]
Pin=-8dBm -4dBm 0dBm 4dBm P1dB
@VDD=6V, IDD(DC)=350mA
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-55
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2-Tone Total Pout [dBm]
IMD
[dB
c]
10GHz 12GHz 14GHz 15.4GHz
IMD vs. Output Power
IM3 Solid LineIM5 Dash Line
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
3Edition 1.2June 2010
IM3 vs. Frequency
P1dB, G1dB vs. Frequency by Drain Voltage P1dB, G1dB vs. Frequency by Drain Current
@VDD=6V, IDD(DC)=350mA, @Po=15dBm S.C.L.
-60
-55
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-40
-35
-30
-25
-20
9 9.5 10 10.5 11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5
Frequency [GHz]
IM3
[dB
c]
@IDD(DC)=350mA
10
12
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28
30
9 9.5 10 10.5 11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5
Frequency [GHz]
P1dB
[dB
m]
20
22
24
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28
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G1d
B [
dB]
VDD=4V 5V 6V
P1dB
@VDD=6V
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30
9 9.5 10 10.5 11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5
Frequency [GHz]
P1dB
[dB
m]
20
22
24
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28
30
32
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40
G1d
B [
dB]
IDD(DC)=250mA 350mA 450mA
G1dB
P1dB P1dB
G1dB
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
4Edition 1.2June 2010
Output Power, Drain Current vs. Input Powerby Drain Voltage
Output Power, Drain Current vs. Input Powerby Drain Voltage
Output Power, Drain Current vs. Input Powerby Drain Voltage
@f=10GHz, IDD(DC)=350mA
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-10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power [dBm]
Out
put P
ower
[dB
m]
0
100
200
300
400
500
600
700
800
Dra
in C
urre
nt [
mA
]
VDD=4V 5V 6V
@f=12GHz, IDD(DC)=350mA
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-10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power [dBm]
Out
put P
ower
[dB
m]
0
100
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300
400
500
600
700
800
Dra
in C
urre
nt [
mA
]
VDD=4V 5V 6V
@f=14GHz, IDD(DC)=350mA
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-10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power [dBm]
Out
put P
ower
[dB
m]
0
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200
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400
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600
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800
Dra
in C
urre
nt [
mA
]
VDD=4V 5V 6V
@f=15.4GHz, IDD(DC)=350mA
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Input Power [dBm]
Out
put P
ower
[dB
m]
0
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Dra
in C
urre
nt [
mA
]
VDD=4V 5V 6V
Output Power, Drain Current vs. Input Powerby Drain Voltage
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
5Edition 1.2June 2010
Output Power, Drain Current vs. Input Powerby Drain Current
Output Power, Drain Current vs. Input Powerby Drain Current
Output Power, Drain Current vs. Input Powerby Drain Current
@f=10GHz, VDD=6V
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-10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power [dBm]
Out
put P
ower
[dB
m]
0
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Dra
in C
urre
nt [
mA
]
IDD(DC)=250mA 350mA 450mA
@f=12GHz, VDD=6V
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-10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power [dBm]
Out
put P
ower
[dB
m]
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800
Dra
in C
urre
nt [
mA
]
IDD(DC)=250mA 350mA 450mA
@f=14GHz, VDD=6V
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-10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power [dBm]
Out
put P
ower
[dB
m]
0
100
200
300
400
500
600
700
800
Dra
in C
urre
nt [
mA
]
IDD(DC)=250mA 350mA 450mA
@f=15.4GHz, VDD=6V
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14
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-10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power [dBm]
Out
put P
ower
[dB
m]
0
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200
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400
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700
800
Dra
in C
urre
nt [
mA
]
IDD(DC)=250mA 350mA 450mA
Output Power, Drain Current vs. Input Powerby Drain Current
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
6Edition 1.2June 2010
IMD Performance vs. Output Power by Drain Voltage
IMD Performance vs. Output Power by Drain Voltage
IMD Performance vs. Output Power by Drain Voltage
@f=10GHz, IDD(DC)=350mA
-65
-60
-55
-50
-45
-40
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-30
-25
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-15
-10
15 16 17 18 19 20 21 22 23 24 25
2-Tone Total Pout [dBm]
IMD
[dB
c]
VDD=4V 5V 6V
@f=12GHz, IDD(DC)=350mA
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-45
-40
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-15
-10
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2-Tone Total Pout [dBm]
IMD
[dB
c]
VDD=4V 5V 6V
@f=14GHz, IDD(DC)=350mA
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-25
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-15
-10
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2-Tone Total Pout [dBm]
IMD
[dB
c]
VDD=4V 5V 6V
@f=15.4GHz, IDD(DC)=350mA
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
15 16 17 18 19 20 21 22 23 24 25
2-Tone Total Pout [dBm]
IMD
[dB
c]
VDD=4V 5V 6V
IMD Performance vs. Output Power by Drain Voltage
IM3 Solid LineIM5 Dash Line
IM3 Solid LineIM5 Dash Line
IM3 Solid LineIM5 Dash Line
IM3 Solid LineIM5 Dash Line
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
7Edition 1.2June 2010
IMD Performance vs. Output Power by Drain Current
IMD Performance vs. Output Power by Drain Current
IMD Performance vs. Output Power by Drain Current
@f=10GHz, VDD=6V
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
15 16 17 18 19 20 21 22 23 24 25
2-Tone Total Pout [dBm]
IMD
[dB
c]
IDD(DC)=250mA 350mA 450mA
@f=12GHz, VDD=6V
-65
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-55
-50
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-40
-35
-30
-25
-20
-15
-10
15 16 17 18 19 20 21 22 23 24 25
2-Tone Total Pout [dBm]
IMD
[dB
c]
IDD(DC)=250mA 350mA 450mA
@f=14GHz, VDD=6V
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
15 16 17 18 19 20 21 22 23 24 25
2-Tone Total Pout [dBm]
IMD
[dB
c]
IDD(DC)=250mA 350mA 450mA
IMD Performance vs. Output Power by Drain Current
@f=15.4GHz, VDD=6V
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-15
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2-Tone Total Pout [dBm]
IMD
[dB
c]
IDD(DC)=250mA 350mA 450mA
IM3 Solid LineIM5 Dash Line
IM3 Solid LineIM5 Dash Line
IM3 Solid LineIM5 Dash Line
IM3 Solid LineIM5 Dash Line
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
8Edition 1.2June 2010
Output Power, Drain Current vs. Input Powerby Temperature
Output Power, Drain Current vs. Input Powerby Temperature
Output Power, Drain Current vs. Input Powerby Temperature
Output Power, Drain Current vs. Input Powerby Temperature
@VDD=6V, IDD(DC)=350mA(Tc=25°C), Freq=12GHz
12
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16
18
20
22
24
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28
-10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power [dBm]
Out
put P
ower
[dB
m]
0
100
200
300
400
500
600
700
800
Dra
in C
urre
nt [
mA
]
Tc=-40°C Tc=+25°C Tc=+85°C
@VDD=6V, IDD(DC)=350mA(Tc=25°C), Freq=14GHz
12
14
16
18
20
22
24
26
28
-10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power [dBm]
Out
put P
ower
[dB
m]
0
100
200
300
400
500
600
700
800
Dra
in C
urre
nt [
mA
]
Tc=-40°C Tc=+25°C Tc=+85°C
@VDD=6V, IDD(DC)=350mA(Tc=25°C), Freq=10GHz
12
14
16
18
20
22
24
26
28
-10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power [dBm]
Out
put P
ower
[dB
m]
0
100
200
300
400
500
600
700
800
Dra
in C
urre
nt [
mA
]
Tc=-40°C Tc=+25°C Tc=+85°C
@VDD=6V, IDD(DC)=350mA(Tc=25°C), Freq=15.4GHz
12
14
16
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20
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-10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power [dBm]
Out
put P
ower
[dB
m]
0
100
200
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400
500
600
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800
Dra
in C
urre
nt [
mA
]
Tc=-40°C Tc=+25°C Tc=+85°C
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
9Edition 1.2June 2010
IMD Performance vs. Output Powerby Temperature
IMD Performance vs. Output Powerby Temperature
IMD Performance vs. Output Powerby Temperature
IMD Performance vs. Output Powerby Temperature
@VDD=6V, IDD(DC)=350mA(Tc=25°C), Freq=10GHz
-65
-60
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-50
-45
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-35
-30
-25
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-15
-10
15 16 17 18 19 20 21 22 23 24 25
2-Tone Total Pout [dBm]
IMD
[dB
c]
Tc=-40°C Tc=+25°C Tc=+85°C
@VDD=6V, IDD(DC)=350mA(Tc=25°C), Freq=12GHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
15 16 17 18 19 20 21 22 23 24 25
2-Tone Total Pout [dBm]
IMD
[dB
c]
Tc=-40°C Tc=+25°C Tc=+85°C
@VDD=6V, IDD(DC)=350mA(Tc=25°C), Freq=14GHz
-65
-60
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-50
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-40
-35
-30
-25
-20
-15
-10
15 16 17 18 19 20 21 22 23 24 25
2-Tone Total Pout [dBm]
IMD
[dB
c]
Tc=-40°C Tc=+25°C Tc=+85°C
@VDD=6V, IDD(DC)=350mA(Tc=25°C), Freq=15.4GHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
15 16 17 18 19 20 21 22 23 24 25
2-Tone Total Pout [dBm]
IMD
[dB
c]
Tc=-40°C Tc=+25°C Tc=+85°C
IM3 Solid LineIM5 Dash Line
IM3 Solid LineIM5 Dash Line
IM3 Solid LineIM5 Dash Line
IM3 Solid LineIM5 Dash Line
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
10Edition 1.2June 2010
S-PARAMETERS
@VDD=6V, IDD=350mA
0
5
10
15
20
25
30
8 9 10 11 12 13 14 15 16
Frequency (GHz)
Sxx
(dB
)
-25
-20
-15
-10
-5
0
5
S21 S11 S22
@VDD=6V, IDD=350mA
-40-35-30-25-20-15-10-505
1015202530
0 5 10 15 20 25 30
Frequency (GHz)
Sxx
(dB
)
S11 S21 S22
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
11Edition 1.2June 2010
Package Outline and Pin Assignment
Unit : mm
SIDE VIEWTOP VIEW
PIN#1IDENTIFIER
2019181716
678910
12
11
13
14
15
4
5
3
2
1
BOTTOM VIEW
PIN#1IDENTIFIER PIN Assignment
RF IN : 2,3 RF OUT : 13,14 VGG : 20 VDD1 : 7 VDD2 : 8 VDD3 : 9 VDD4 : 10 N/C : 1,4,5,6,11,12, 15,16,17,18,19
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
12Edition 1.2June 2010
PCB Pads and Solder-resist Pattern
Notes :1.LAMINATE : Rogers Corporation RO4003, Thickness t=0.2mm, Cu Foil 18μm Finish to copper foil ; Ni 0.1μm min./Au 0.1±0.08μm (Both side)
Unit : mm
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
13Edition 1.2June 2010
Recommended Bias Network
EMM5079ZBRF IN RF OUT
20
23
8 9
1413
100pF
0.1uF
VDD2
100pF
0.1uF
VGG
100pF
0.1uF
VDD1
100pF
0.1uF
VDD3
7 10
100pF
0.1uF
VDD4
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
14Edition 1.2June 2010
JDEC Tray Packing (Part No. : EMM5079ZB)
(1) Maximum Quantity: 490 pcs/ Tray(2) Maximum Number of Trays in one Pack: 10 Trays(3) Tray Materials: PPE (SPO-2114)
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
15Edition 1.2June 2010
Tape and Reel Packing (Part No. : EMM5079ZBT)
X / Ku-Band Power Amplifier MMIC
EMM5079ZB
16Edition 1.2June 2010
Mounting Method of SMD(Surface Mount Devices) for Lead-free solder
Mounting Condition
1. For soldering, Lead-free solder (Sn-3.0Ag-0.5Cu)*1 or equivalent shall be used. (*1:The figure displays with weight %. A predominantly tin-rich alloy with 3.0% silver and 0.5% copper.)2. A rosin type flux with a chlorine content of 0.2% or less shall be used. The rosin flux with low halogen content is recommended.3. When soldering, use one of the following time/ temperature methods for acceptable solder joints. Make sure the devices have been properly prepared with flux prior soldering.
* Reflow soldering method (Infrared reflow / Heat circulation reflow / Hot plate reflow): Limit solder to 3 reflow cycles because resin is used in the modules manufacturing process. Excessive reflow cycles will effect the resin resulting in a potential failure or latent defect. The recommended reflow temperature profile is shown below. The temperature of the reflow profile must be measured at the device lead.
Reflow temperature profile and condition:
(1) Average Ramp-up Rate: 3 deg-C/seconds (2) Preheating: 150 - 200 deg-C, 60 - 180 seconds (3) Main heating: 220 deg-C, 60 seconds max. (4) Peak Temperature: 260 deg-C max., more than 250 deg-C, 10 seconds max. * Measurement point: Device lead.
4. The above-recommended conditions were confirmed using the manufacture’s equipment and materials. However, when soldering these products, the soldering condition should be verified by customer using their equipment and materials.
200220
(4)
(1)
260250
RT
(2)
(3)
150
Time
Tem
pera
ture
(de
g-C
)
For further information please contact :
Sumitomo Electric Device Innovations, Inc. reserves the right tochange products and specifications without notice.The informationdoes not convey any license under rights of Sumitomo ElectricDevice Innovations, Inc. or others.
CAUTION
Sumitomo Electric Device Innovations, Inc. products contain galliumarsenide (GaAs) which can be hazardous to the human body and theenvironment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Sumitomo Electric Device Innovations, U.S.A., Inc.2355 Zanker Rd.San Jose, CA 95131-1138, U.S.A.TEL: +1 408 232-9500FAX: +1 408 428-9111
Sumitomo Electric Europe Ltd.220 Centennial Park,Elestree WD6 3SL United KingdomTEL: +44 (0) 20 89538118FAX: +44 (0) 20 89538228
Sumitomo Electric Europe Ltd. (Italy Branch)Piazza Don E. Mapelli, 60-20099Sesto San Giovanni, Milano- ItalyTEL: +39-02-496386-01FAX: +39-02-496386-25
Sumitomo Electric Asia, Ltd. Room 2624-2637, 26FSun Hung Kai Centre, 30 Harbour Road Wanchai,Hong KongTEL: +852-2579-0080FAX: +852-2576-6412
Sumitomo Electric Device Innovations, Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan(Kokubo Industrial Park)TEL +81-55-275-4411 FAX +81-55-275-9461
Sumitomo Electric Industries, Ltd.Head Office (Tokyo)3-9-1, Shibaura, Minato-ku, Tokyo 108-8539, JapanTEL +81-3-6722-3287FAX +81-3-6722-3284
© 2010 Sumitomo Electric Device Innovations, Inc.
