TDA7560

4 x 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD

SUPERIOR OUTPUT POWER CAPABILITY:4 x 50W/4Ω MAX.4 x 45W/4Ω EIAJ4 x 30W/4Ω @ 14.4V, 1KHz, 10%4 x 80W/2Ω MAX.4 x 77W/2Ω EIAJ4 x 55W/2Ω @ 14.4V, 1KHz, 10%EXCELLENT 2Ω DRIVING CAPABILITYHI-FI CLASS DISTORTIONLOW OUTPUT NOISEST-BY FUNCTIONMUTE FUNCTIONAUTOMUTE AT MIN. SUPPLY VOLTAGE DE-TECTIONLOW EXTERNAL COMPONENT COUNT:– INTERNALLY FIXED GAIN (26dB)– NO EXTERNAL COMPENSATION– NO BOOTSTRAP CAPACITORSON BOARD 0.35A HIGH SIDE DRIVER

PROTECTIONS:OUTPUT SHORT CIRCUIT TO GND, TO VS,ACROSS THE LOADVERY INDUCTIVE LOADSOVERRATING CHIP TEMPERATURE WITHSOFT THERMAL LIMITEROUTPUT DC OFFSET DETECTION

LOAD DUMP VOLTAGEFORTUITOUS OPEN GNDREVERSED BATTERYESD

DESCRIPTIONThe TDA7560 is a breakthrough BCD (Bipolar /CMOS / DMOS) technology class AB AudioPower Amplifier in Flexiwatt 25 package designedfor high power car radio. The fully complementaryP-Channel/N-Channel output structure allows arail to rail output voltage swing which, combinedwith high output current and minimised saturationlosses sets new power references in the car-radiofield, with unparalleled distortion performances.

November 2001

ORDERING NUMBER: TDA7560

IN1

0.1µF

MUTE

ST-BY

IN2

0.1µF

OUT1+

OUT1-

OUT2+

OUT2-

PW-GND

IN3

0.1µF

IN4

0.1µF

OUT3+

OUT3-

OUT4+

OUT4-

PW-GND

PW-GND

PW-GND

D94AU158C

AC-GND

0.47µF 47µF

SVR TAB S-GND

Vcc1 Vcc2100nF470µF

HSD/VOFFDETHSD

BLOCK AND APPLICATION DIAGRAM

FLEXIWATT25

MULTIPOWER BCD TECHNOLOGY

MOSFET OUTPUT POWER STAGE

1/10

D94AU159A

TA

B

P-G

ND

2

OU

T2-

ST

-BY

OU

T2+

VC

C

OU

T1-

P-G

ND

1

OU

T1+

SV

R

IN1

IN2

S-G

ND

IN4

IN3

AC

-GN

D

OU

T3+

P-G

ND

3

OU

T3-

VC

C

OU

T4+

MU

TE

OU

T4-

P-G

ND

4

HS

D

1 25

PIN CONNECTION (Top view)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

VCC Operating Supply Voltage 18 V

VCC (DC) DC Supply Voltage 28 V

VCC (pk) Peak Supply Voltage (t = 50ms) 50 V

IO Output Peak Current:Repetitive (Duty Cycle 10% at f = 10Hz)Non Repetitive (t = 100µs)

910

AA

Ptot Power dissipation, (Tcase = 70°C) 80 W

Tj Junction Temperature 150 °C

Tstg Storage Temperature – 55 to 150 °C

THERMAL DATA

Symbol Parameter Value Unit

Rth j-case Thermal Resistance Junction to Case Max. 1 °C/W

TDA7560

2/10

ELECTRICAL CHARACTERISTICS (VS = 13.2V; f = 1KHz; Rg = 600Ω; RL = 4Ω; Tamb = 25°C;Refer to the test and application diagram, unless otherwise specified.)

Symbol Parameter Test Condition Min. Typ. Max. UnitIq1 Quiescent Current RL = ∞ 120 200 320 mA

VOS Output Offset Voltage Play Mode ±60 mVdVOS During mute ON/OFF output

offset voltage±60 mV

Gv Voltage Gain 25 26 27 dBdGv Channel Gain Unbalance ±1 dBPo Output Power VS = 13.2V; THD = 10%

VS = 13.2V; THD = 1%VS = 14.4V; THD = 10%VS = 14.4V; THD = 1%

23162820

25193023

WWWW

VS = 13.2V; THD = 10%, 2ΩVS = 13.2V; THD = 1%, 2ΩVS = 14.4V; THD = 10%, 2ΩVS = 14.4V; THD = 1%, 2Ω

42325040

45345543

WWWW

Po EIAJ EIAJ Output Power (*) VS = 13.7V; RL = 4ΩVS = 13.7V; RL = 2Ω

41 4577

WW

Po max. Max. Output Power (*) VS = 14.4V; RL = 4ΩVS = 14.4V; RL = 2Ω

5080

WW

THD Distortion Po = 4WPo = 15W; RL = 2Ω

0.0060.015

0.050.07

%%

eNo Output Noise ”A” WeightedBw = 20Hz to 20KHz

3550

5070

µVµV

SVR Supply Voltage Rejection f = 100Hz; Vr = 1Vrms 50 70 dBfch High Cut-Off Frequency PO = 0.5W 100 300 KHzRi Input Impedance 80 100 120 KΩCT Cross Talk f = 1KHz PO = 4W

f = 10KHz PO = 4W60 70

60––

dBdB

ISB St-By Current Consumption VSt-By = 1.5V 75 µAIpin4 St-by pin Current VSt-By = 1.5V to 3.5V ±10 µA

VSB out St-By Out Threshold Voltage (Amp: ON) 3.5 VVSB in St-By in Threshold Voltage (Amp: OFF) 1.5 VAM Mute Attenuation POref = 4W 80 90 dB

VM out Mute Out Threshold Voltage (Amp: Play) 3.5 VVM in Mute In Threshold Voltage (Amp: Mute) 1.5 VVAM in VS Automute Threshold (Amp: Mute)

Att ≥ 80dB; POref = 4W(Amp: Play)Att < 0.1dB; PO = 0.5W

6.5 7

7.5 8

V

VIpin22 Muting Pin Current VMUTE = 1.5V

(Sourced Current)7 12 18 µA

VMUTE = 3.5V -5 18 µAHSD SECTION

Vdropout Dropout Voltage IO = 0.35A; VS = 9 to 16V 0.25 0.6 VIprot Current Limits 400 800 mA

OFFSET DETECTOR SECTIONVM_ON Mute Voltage for DC offset

detection enabledVstby = 5V 8 V

VM_OFF 6 VVOFF Detected Differential Output Offset Vstby = 5V; Vmute = 8V ±2 ±3 ±4 VV25_T Pin 25 Voltage for Detection =

TRUEVstby = 5V; Vmute = 8VVOFF > ±4V

0 1.5 V

V25_F Pin 25 Voltage for Detection =FALSE

Vstby = 5V; Vmute = 8VVOFF > ±2V

12 V

(*) Saturated square wave output.

TDA7560

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IN1

0.1µF

C9 1µF

IN2

C2 0.1µF

OUT1

OUT2

IN3

C3 0.1µF

IN4

C4 0.1µF

OUT3

OUT4

D95AU335BC5

0.47µFC6

47µF

SVR TAB

Vcc1-2 Vcc3-4

C8 0.1µF

C7 2200µF

C10 1µF

ST-BYR1

10K

R2

47KMUTE

C1

14

15

12

11

22

4

13S-GND

16 10 25 1

HSD

6 20

9

8

7

5

2

3

17

18

19

21

24

23

Figure 1: Standard Test and Application Circuit

TDA7560

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Figure 2: P.C.B. and component layout of the figure 1 (1:1 scale)

COMPONENTS &TOP COPPER LAYER

BOTTOM COPPER LAYER

TDA7560

5/10

8 10 12 14 16 18Vs (V)

140

160

180

200

220

240Id (mA)

Vi= 0

RL = 4 Ohm

Figure 3. Quiescent current vs. supplyvoltage.

8 9 10 11 12 13 14 15 16 17 18Vs (V)

5101520253035404550556065707580

Po (W)

RL=4Ohmf=1 KHz

THD=10 %

THD=1%

Po-max

Figure 4. Output power vs. supply voltage.

8 9 10 11 12 13 14 15 16 17 18Vs(V)

102030405060708090

100110120130

Po(W)

RL=2 Ohmf=1KHz THD=10%

THD=1%

Po-max

Figure 5. Output power vs. supply voltage.

0.1 1 10Po(W)

0.001

0.01

0.1

1

10THD(%)

f= 10KHz

RL= 4Ohm

f= 1 KHz

Vs=14.4V

Figure 6. Distortion vs. output Power

0.1 1 10Po(W)

0.001

0.01

0.1

1

10THD(%)

f = 10KHz

RL= 2 Ohm

f= 1 KHz

Vs=14.4V

Figure 7. Distortion vs. output power

10 100 1000 10000f (Hz)

0.001

0.01

0.1

1

10THD(%)

Po=4 WRL=4 Ohm

Vs=14.4V

Figure 8. Distortion vs. frequency.

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10 100 1000 10000f (Hz)

20

30

40

50

60

70

80

90CROSSTALK(dB)

Po= 4 WRL= 4Ohm

Rg= 600 Ohm

Figure 10. Crosstalk vs. frequency.

10 100 1000 10000f (Hz)

20

30

40

50

60

70

80

90

100SVR(dB)

Vripple=1 Vrms

Rg= 600 Ohm

Figure 11. Supply voltage rejection vs. fre-quency.

5 6 7 8 9 10Vs (V)

0

-20

-40

-60

-80

-100

OUT ATTN(dB)

RL= 4 Ohm

Po= 4 Wref.

Figure 12. Output attenuation vs. supplyvoltage.

1 10 100 1000 10000 100000Rg(Ohm)

2030405060708090

100110120130

En(uV)

Vs=14.4VRL=4 Ohm

”A”wgtd

22-22KHz lin.

Figure 13. Output noise vs. source resistance.

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30Po (W)

0

10

20

30

40

50

60

70

80

90Ptot (W)

0

10

20

30

40

50

60

70

80

90n (%)

Vs=13.2V

RL=4 x 4 Ohm

f=1 KHz SINE

n

Ptot

Figure 14. Power dissipation & efficiency vs.output power (sine-wave operation)

10 100 1000 10000f (Hz)

0.001

0.01

0.1

1

10THD(%)

Po= 8 W

RL=2 OhmVs=14.4V

Figure 9. Distortion vs. frequency.

TDA7560

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0 2 4 6 8 10Po (W)

51015202530354045505560

Ptot (W)

Vs= 13.2VRL=4 x 2 Ohm

CLIP START

GAUSSIAN NOISE

Figure 16. Power dissipation vs. output power(Music/Speech Simulation)

0 1 2 3 4 5 6Po (W)

5

10

15

20

25

30Ptot (W)

Vs= 13.2VRL=4 x 4 Ohm

CLIP STARTGAUSSIANNOISE

Figure 15. Power dissipation vs. ouput power(Music/Speech Simulation)

DC OFFSET DETECTORThe TDA7560 integrates a DC offset detector toavoid that an anomalous DC offset on the inputsof the amplifier may be multiplied by the gain andresult in a dangerous large offset on the outputswhich may lead to speakers damage for over-heating.The feature is enabled by the MUTE pin andworks with the amplifier umuted and with no sig-nal on the inputs. The DC offset detection is sig-naled out on the HSD pin.

APPLICATION HINTS (ref. to the circuit of fig. 1)SVRBesides its contribution to the ripple rejection, theSVR capacitor governs the turn ON/OFF time se-quence and, consequently, plays an essential rolein the pop optimization during ON/OFF tran-sients.To conveniently serve both needs, ITSMINIMUM RECOMMENDED VALUE IS 10µF.

INPUT STAGEThe TDA7560’s inputs are ground-compatible andcan stand very high input signals (± 8Vpk) withoutany performancesdegradation.If the standard value for the input capacitors(0.1µF) is adopted, the low frequency cut-off willamount to 16 Hz.

STAND-BY AND MUTINGSTAND-BY and MUTING facilities are bothCMOS-COMPATIBLE. If unused, a straight con-nection to Vs of their respective pins would be ad-missible. Conventional low-power transistors canbe employed to drive muting and stand-by pins inabsence of true CMOS ports or microprocessors.R-C cells have always to be used in order tosmooth down the transitions for preventing anyaudible transient noises.About the stand-by, the time constant to be as-signed in order to obtain a virtually pop-free tran-sition has to be slower than 2.5V/ms.

HEATSINK DEFINITIONUnder normal usage (4 Ohm speakers) theheatsink’s thermal requirements have to be de-duced from fig. 15, which reports the simulatedpower dissipation when real music/speech pro-grammes are played out. Noise with gaussian-distributed amplitude was employed for this simu-lation. Based on that, frequent clipping occurence(worst-case) will cause Pdiss = 26W. AssumingTamb = 70°C and TCHIP = 150°C as boundaryconditions, the heatsink’s thermal resistanceshould be approximately 2°C/W. This would avoidany thermal shutdown occurence even after long-term and full-volume operation.

TDA7560

8/10

Flexiwatt25

DIM. mm inchMIN. TYP. MAX. MIN. TYP. MAX.

A 4.45 4.50 4.65 0.175 0.177 0.183B 1.80 1.90 2.00 0.070 0.074 0.079C 1.40 0.055D 0.75 0.90 1.05 0.029 0.035 0.041E 0.37 0.39 0.42 0.014 0.015 0.016

F (1) 0.57 0.022G 0.80 1.00 1.20 0.031 0.040 0.047

G1 23.75 24.00 24.25 0.935 0.945 0.955H (2) 28.90 29.23 29.30 1.138 1.150 1.153H1 17.00 0.669H2 12.80 0.503H3 0.80 0.031

L (2) 22.07 22.47 22.87 0.869 0.884 0.904L1 18.57 18.97 19.37 0.731 0.747 0.762

L2 (2) 15.50 15.70 15.90 0.610 0.618 0.626L3 7.70 7.85 7.95 0.303 0.309 0.313L4 5 0.197L5 3.5 0.138M 3.70 4.00 4.30 0.145 0.157 0.169M1 3.60 4.00 4.40 0.142 0.157 0.173N 2.20 0.086O 2 0.079R 1.70 0.067

R1 0.5 0.02R2 0.3 0.12R3 1.25 0.049R4 0.50 0.019V 5° (Typ.)V1 3° (Typ.)V2 20° (Typ.)V3 45° (Typ.)

(1): dam-bar protusion not included(2): molding protusion included

H3

R4

GV

G1

L2

H1H

FM1

L

FLEX25ME

V3

OL3

L4

H2

R3

N

V2

R

R2

R2

C

B

L1

M

R1

L5 R1 R1

E

D

A

V

V1

V1

OUTLINE ANDMECHANICAL DATA

TDA7560

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication aresubject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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