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V(BR)DSS RDS(on)MAX ID

20V0.022Ω @ 4.5V

6.0A0.030Ω @ 2.5V

MARKING

Equivalent Circuit

S8205A SOT-23-6 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package

Dual N-Channel MOSFET

APPLICATION Battery Protection Load Switch Power Management

SOT-23-6

ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Parameter Symbol Value Unit

Drain-Source Voltage VDS 20

Gate-Source Voltage VGS ±10 V

Continuous Drain Current ID A Pulsed Drain Current (note 1) IDM 20 A

Thermal Resistance from Junction to Ambient (note 2) RθJA 100 /W Junction Temperature TJ 150

Storage Temperature TSTG -55~+150

Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260

V

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Y :year code W :week code

8205A

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MOSFET ELECTRICAL CHARACTERISTICS

Ta =25 unless otherwise specified

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23-6 Plastic-Encapsulate MOSFETS

Parameter Symbol Test Condition Min Typ Max Unit

STATIC CHARACTERICTISCS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 20 V

Zero gate voltage drain current IDSS VDS =18V,VGS = 0V 500 nA

Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA

Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.5 V

Drain-source on-resistance (note 3) RDS(on) VGS =4.5V, ID =5A mΩ

VGS =2.5V, ID =4A 30 mΩ

Forward tranconductance (note 3) gFS VDS =5V, ID =5A 10 S

Diode forward voltage (note 3) VSD IS=1.25A, VGS = 0V 1.2 V

DYNAMIC CHARACTERICTISCS (note4)

Input Capacitance Ciss

VDS =8V,VGS =0V,f =1MHz

800 pF

Output Capacitance Coss 155 pF

Reverse Transfer Capacitance Crss 125 pF

SWITCHING CHARACTERICTISCS (note 4) Turn-on delay time td(on)

VDD=10V,VGS=4V,

ID=1A,RGEN=10Ω

18 ns

Turn-on rise time tr 4.8 ns

Turn-off delay time td(off) 43.5 ns

Turn-off fall time tf 20 ns

Total Gate Charge Qg

VDS =10V,VGS =4.5V,ID=4A 11 nC

Gate-Source Charge Qgs 2.2 nC

Gate-Drain Charge Qgd 2.5 nC

Notes : 1.Repetitive rating：Pluse width limited by maximum junction temperature

2.Surface Mounted on FR4 board，t≤10 sec.

3. Pulse test : Pulse width≤300μs, duty cycle≤2%.

4. Guaranteed by design, not subject to production.

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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23-6 Plastic-Encapsulate MOSFETS

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Typical Electrical and Thermal Characteristics

Vgs Rgen

Vin

G

Vdd

RlVout

S

D

Figure 1:Switching Test Circuit

TJ-Junction Temperature()

Figure 3 Power Dissipation

Vds Drain-Source Voltage (V) Figure 5 Output Characteristics

VIN

VOUT

10%

10%

50% 50%

PULSE WIDTH

INVERTED

td(on)

90%

tr

ton

90%

10%

toff

td(off)tf

90%

VIN

VOUT

10%

10%

50% 50%

PULSE WIDTH

INVERTED

td(on)

90%90%

tr

ton

90%

10%

toff

td(off)tf

90%

Figure 2:Switching Waveforms

TJ-Junction Temperature()

Figure 4 Drain Current

ID- Drain Current (A) Figure 6 Drain-Source On-Resistance

PD

P

ower

(W)

I D- D

rain

Cur

rent

(A）

R

dson

On-

Res

ista

nce(

mΩ

)

I D- D

rain

Cur

rent

(A)

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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23-6 Plastic-Encapsulate MOSFETS

Vgs Gate-Source Voltage (V)

Figure 7 Transfer Characteristics

Vgs Gate-Source Voltage (V)

Figure 9 Rdson vs Vgs

Qg Gate Charge (nC) Figure 11 Gate Charge

TJ-Junction Temperature() Figure 8 Drain-Source On-Resistance

Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds

Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward

I D- D

rain

Cur

rent

(A)

Rds

on O

n-R

esis

tanc

e(mΩ

) V

gs G

ate-

Sou

rce

Volta

ge (V

)

Nor

mal

ized

On-

Res

ista

nce

C C

apac

itanc

e (p

F)

I s- R

ever

se D

rain

Cur

rent

(A)

5

5

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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23-6 Plastic-Encapsulate MOSFETS

Vds Drain-Source Voltage (V)

Figure 13 Safe Operation Area

Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance

r(t),

Nor

mal

ized

Effe

ctiv

e Tr

ansi

ent T

herm

al Im

peda

nce

I D- D

rain

Cur

rent

(A)

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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23-6 Plastic-Encapsulate MOSFETS

SOT23-6 Package Information

S8205A

www.sztuofeng.com Dec,2019 V1.1