Post on 24-Jan-2016
description
Semiconductor Group 1 07/96
BUZ 338
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1 Pin 2 Pin 3
G D S
Type VDS ID RDS(on ) Package Ordering Code
BUZ 338 500 V 13.5 A 0.4 Ω TO-218 AA C67078-S3126-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TC = 28 °C
ID 13.5
A
Pulsed drain current
TC = 25 °C
IDpuls
54
Avalanche current,limited by Tjmax IAR 13.5
Avalanche energy,periodic limited by Tjmax EAR 18 mJ
Avalanche energy, single pulse
ID = 13.5 A, VDD = 50 V, RGS = 25 Ω
L = 9.18 mH, Tj = 25 °C
EAS
930
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25 °C
Ptot
180
W
Operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC ≤ 0.7 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group 2 07/96
BUZ 338
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V(BR)DSS
500 - -
V
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th)
2.1 3 4
Zero gate voltage drain current
VDS = 500 V, VGS = 0 V, Tj = 25 °C
VDS = 500 V, VGS = 0 V, Tj = 125 °C
IDSS
-
-
10
0.1
100
1
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS
- 10 100
nA
Drain-Source on-resistance
VGS = 10 V, ID = 8.5 A
RDS(on)
- 0.3 0.4
Ω
Semiconductor Group 3 07/96
BUZ 338
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
VDS≥ 2 * ID * RDS(on)max, ID = 8.5 A
gfs
8 15 -
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss
- 2500 3325
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss
- 320 480
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
- 120 180
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50 Ω
td(on)
- 40 60
ns
Rise time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50 Ω
tr
- 100 150
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50 Ω
td(off)
- 450 600
Fall time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50 Ω
tf
- 120 160
Semiconductor Group 4 07/96
BUZ 338
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
IS- - 13.5
A
Inverse diode direct current,pulsed
TC = 25 °C
ISM
- - 54
Inverse diode forward voltage
VGS = 0 V, IF = 27 A
VSD
- 1.1 1.6
V
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/µs
trr- 400 -
ns
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Qrr
- 6.2 -
µC
5 07/96Semiconductor Group
BUZ 338
Drain current ID = ƒ(TC)
parameter: VGS ≥ 10 V
0 20 40 60 80 100 120 °C 160TC
0 1
2
3
4
5
6
7
8
9
10
11
12
A
14
ID
Power dissipation Ptot = ƒ(TC)
0 20 40 60 80 100 120 °C 160TC
0
20
40
60
80
100
120
140
160
W
190
Ptot
Safe operating area ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
-1 10
0 10
1 10
2 10
A
ID
10 0 10 1 10 2 10 3 V VDS
R DS(on
) =
V DS
/
I D
DC
10 ms
1 ms
100 µs
10 µs
tp = 6.8µs
Transient thermal impedance Zth JC = ƒ(tp)
parameter: D = tp / T
-3 10
-2 10
-1 10
0 10
K/W
ZthJC
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 6 07/96
BUZ 338
Typ. output characteristics ID = ƒ(VDS)
parameter: tp = 80 µs
0 4 8 12 16 20 V 28VDS
0 2
4
6
8
10
12
14
16
18
20
22
24
26
A
30
ID
VGS [V]
a
a 4.0
b
b 4.5
c
c 5.0
d
d 5.5
e
e 6.0
f
f 6.5
g
g 7.0
h
h 7.5
i
i 8.0
j
j 9.0
k
k 10.0
lPtot = 180W
l 20.0
Typ. drain-source on-resistance RDS (on) = ƒ(ID)
parameter: VGS
0 4 8 12 16 20 A 28ID
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Ω
1.3
RDS (on)
VGS [V] = a4.0
VGS [V] =
a
a4.5
b
b5.0
c
c5.5
d
d6.0
e
e6.5
f
f7.0
g
g7.5
h
h8.0
i
i9.0
j
j10.0
k
k20.0
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µsVDS≥2 x ID x RDS(on)max
0 1 2 3 4 5 6 7 8 V 10VGS
0 1
2
3
4
5
6
7
8
9
10
11
12
13
A
15
ID
Typ. forward transconductance gfs = f (ID)parameter: tp = 80 µs,VDS≥2 x ID x RDS(on)max
0 2 4 6 8 10 A 14ID
0
2
4
6
8
10
12
14
16
S
20
gfs
7 07/96Semiconductor Group
BUZ 338
Gate threshold voltage VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
VGS(th)
-60 -20 20 60 100 °C 160Tj
2%
typ
98%
Drain-source on-resistance RDS (on) = ƒ(Tj)
parameter: ID = 8.5 A, VGS = 10 V
-60 -20 20 60 100 °C 160Tj
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Ω
1.7
RDS (on)
typ
98%
Typ. capacitances
C = f (VDS)parameter:VGS = 0V, f = 1MHz
0 5 10 15 20 25 30 V 40VDS
-2 10
-1 10
0 10
1 10
nF
C
Crss
Coss
Ciss
Forward characteristics of reverse diode IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
-1 10
0 10
1 10
2 10
A
IF
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0VSD
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
Semiconductor Group 8 07/96
BUZ 338
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 13.5 A, VDD = 50 V
RGS = 25 Ω, L = 9.18 mH
20 40 60 80 100 120 °C 160Tj
0
100
200
300
400
500
600
700
800
mJ
1000
EAS
Typ. gate charge VGS = ƒ(QGate)
parameter: ID puls = 20 A
0 20 40 60 80 100 120 140 160 nC 190QGate
0
2
4
6
8
10
12
V
16
VGS
DS maxV0,8
DS maxV0,2
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj)
-60 -20 20 60 100 °C 160Tj
450 460
470
480
490
500
510
520
530
540
550
560
570
580
V
600
V(BR)DSS
Semiconductor Group 9 07/96
BUZ 338
Package OutlinesTO-218 AADimension in mm
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