Report - P1 – Silicon Superjunction and GaN HEMT Power DevicesMay 09, 2016  · LS = 0.1 µm LGS =1.5 µm LG =1.5 µm LGD = 3 or 9 µm LD = 0.1 µm Nitride thicknes = 0.05 µm Al0.2Ga0.8N

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