N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 …This is information on a product in full...

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This is information on a product in full production. October 2016 DocID026836 Rev 3 1/13 STP110N7F6 N-channel 68 V, 0.0055 typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1. Internal schematic diagram Features Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R DS(on) in all packages. TO-220 1 2 3 TAB Order code V DS R DS(on)max. I D P TOT STP110N7F6 68 V 0.0065 110 A 176 W Table 1. Device summary Order code Marking Package Packing STP110N7F6 110N7F6 TO-220 Tube www.st.com

Transcript of N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 …This is information on a product in full...

Page 1: N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 …This is information on a product in full production. October 2016 DocID026836 Rev 3 1/13 STP110N7F6 N-channel 68 V, 0.0055 Ω typ.,

This is information on a product in full production.

October 2016 DocID026836 Rev 3 1/13

STP110N7F6

N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Very low on-resistance

• Very low gate charge

• High avalanche ruggedness

• Low gate drive power loss

Applications• Switching applications

DescriptionThis device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

TO-220

12

3

TAB

Order code VDS RDS(on)max. ID PTOT

STP110N7F6 68 V 0.0065 Ω 110 A 176 W

Table 1. Device summary

Order code Marking Package Packing

STP110N7F6 110N7F6 TO-220 Tube

www.st.com

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Contents STP110N7F6

2/13 DocID026836 Rev 3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.1 TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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DocID026836 Rev 3 3/13

STP110N7F6 Electrical ratings

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1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 68 V

VGS Gate- source voltage ±20 V

IDDrain current (continuous) at TC = 25 °C 110 A

Drain current (continuous) at TC = 100 °C 80 A

IDM(1)

1. Pulse width is limited by safe operating area

Drain current (pulsed) TC = 25 °C 440 A

PTOT Total dissipation at TC = 25 °C 176 W

EAS(2)

2. Starting TJ = 25 °C, ID = 35 A, VDD = 50 V

Single pulse avalanche energy 185 mJ

TJ Operating junction temperature range-55 to 175

°C

Tstg Storage temperature range °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max. 0.85 °C/W

Rthj-amb Thermal resistance junction-ambient max. 62.5 °C/W

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Electrical characteristics STP110N7F6

4/13 DocID026836 Rev 3

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On/off-states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown voltage

VGS = 0, ID = 1 mA 68 V

IDSSZero gate voltage drain current

VGS = 0, VDS = 68 V 1 µA

VGS = 0, VDS = 68 V, TC = 125 °C (1)

1. Defined by design, not subject to production test.

100 µA

IGSSGate-body leakagecurrent

VDS = 0, VGS = +20 V 100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V

RDS(on)Static drain-source on- resistance

VGS = 10 V, ID = 55 A 0.0055 0.0065 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

-

5850

-

pF

Coss Output capacitance 340 pF

CrssReverse transfer capacitance

240 pF

Qg Total gate charge VDD = 34 V, ID = 110 A,VGS = 10 V

(see Figure 14)

100 nC

Qgs Gate-source charge 32 nC

Qgd Gate-drain charge 19 nC

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 34 V, ID = 55 A,

RG = 4.7 Ω, VGS = 10 V(see Figure 13)

-

23

-

ns

tr Rise time 29 ns

td(off) Turn-off delay time 103 ns

tf Fall time 23 ns

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DocID026836 Rev 3 5/13

STP110N7F6 Electrical characteristics

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Table 7. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

VSD(1)

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage ISD = 110 A, VGS = 0

-

1.2 V

trr Reverse recovery timeISD = 110 A, di/dt = 100 A/µs

VDD = 54 V, (see Figure 15)

31 ns

Qrr Reverse recovery charge 39 nC

IRRM Reverse recovery current 2.6 A

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Electrical characteristics STP110N7F6

6/13 DocID026836 Rev 3

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Normalized thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistanceVGS

6

4

2

00 20 Qg(nC)

(V)

8

40

10

VDD=34VID=110A

60 80 100

12

AM15423v1

Page 7: N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 …This is information on a product in full production. October 2016 DocID026836 Rev 3 1/13 STP110N7F6 N-channel 68 V, 0.0055 Ω typ.,

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STP110N7F6 Electrical characteristics

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Figure 8. Capacitance variations Figure 9. Normalized V(BR)DSS vs temperatureC

3000

2000

1000

00 40 VDS(V)

(pF)

20 60

Ciss

CossCrss

4000

5000

6000

7000

AM15425v1 V(BR)DSS

-75 -25 TJ(°C)

(norm)

-50 500 25 750.8

0.85

0.9

0.95

1

1.05

ID = 1mA

100125150

1.1

AM15428v1

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized on-resistance vs temperature

VGS(th)

0.6

0.4

0.2

0-75 -25 TJ(°C)

(norm)

-50

0.8

500 25 75 100

1 ID=250 µA

125150

1.2

175

AM15426v1 RDS(on)

1.5

1

0.5

0TJ(°C)

2VGS=10V

(norm)

-75 -25-50 500 25 75 100 125 150

AM15424v1

Figure 12. Source-drain diode forward characteristics

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Test circuits STP110N7F6

8/13 DocID026836 Rev 3

3 Test circuits

Figure 13. Switching times test circuit for resistive load

Figure 14. Gate charge test circuit

Figure 15. Test circuit for inductive load switching and diode recovery times

Figure 16. Unclamped inductive load test circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

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DocID026836 Rev 3 9/13

STP110N7F6 Package information

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4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Page 10: N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 …This is information on a product in full production. October 2016 DocID026836 Rev 3 1/13 STP110N7F6 N-channel 68 V, 0.0055 Ω typ.,

Package information STP110N7F6

10/13 DocID026836 Rev 3

4.1 TO-220 package information

Figure 19. TO-220 type A package outline

Page 11: N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 …This is information on a product in full production. October 2016 DocID026836 Rev 3 1/13 STP110N7F6 N-channel 68 V, 0.0055 Ω typ.,

DocID026836 Rev 3 11/13

STP110N7F6 Package information

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Table 8. TO-220 type A mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13 14

L1 3.50 3.93

L20 16.40

L30 28.90

øP 3.75 3.85

Q 2.65 2.95

Page 12: N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 …This is information on a product in full production. October 2016 DocID026836 Rev 3 1/13 STP110N7F6 N-channel 68 V, 0.0055 Ω typ.,

Revision history STP110N7F6

12/13 DocID026836 Rev 3

5 Revision history

Table 9. Document revision history

Date Revision Changes

04-Dec-2014 1 First release.

30-Mar-2015 2 Document status promoted from preliminary to production data.

13-Oct-2016 3Updated Figure 11: Normalized on-resistance vs temperature and Section 4.1: TO-220 package information.Minor text changes.

Page 13: N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 …This is information on a product in full production. October 2016 DocID026836 Rev 3 1/13 STP110N7F6 N-channel 68 V, 0.0055 Ω typ.,

DocID026836 Rev 3 13/13

STP110N7F6

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