2.4
1.47
Thermal Characteristics
FQP3P50P-Channel QFET® MOSFET-500 V, -2.7 A, 4.9 Ω
Description
©2000 Fairchild Semiconductor Corporation FQP3P50 Rev.
www.fairchildsemi.com1
FQP3P50 —
P-Channel Q
FET® M
OSFET
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features• -2.7 A, -500 V, RDS(on) = 4.9 Ω (Max.) @ VGS = -10 V,
ID = -1.35 A
• Low Gate Charge (Typ. 18 nC)
• Low Crss (Typ 9.5 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
FQP3P50
+θ Thermal Resistance, Junction-to-Case, Max. 6?
+θ Thermal Resistance, Junction-to-Ambient, Max. -' & 6?
TO-220GDS
G
S
D
Symbol Parameter FQP3P50 UnitVDSS Drain-Source Voltage -500 V
ID Drain Current -2.7 A- Continuous (TC = 25°C)
- Continuous (TC = 100°C) -1.71 A
IDM Drain Current - Pulsed (Note 1) -10.8 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 250 mJ
IAR Avalanche Current (Note 1) -2.7 A
EAR Repetitive Avalanche Energy (Note 1) 8.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -4.5 V/ns
PD Power Dissipation (TC = 25°C) 85 W
- Derate above 25°C 0.68 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum lead temperature for soldering, 1/8" from case for 5 seconds
300 °C
January 2016
Package Marking and Ordering Information
www.fairchildsemi.com2
FQP3P50 —
P-Channel Q
FET® M
OSFET
1. Repetitive rating : pulse-width limited by maximum junction temperature.2. L = 62 mH, IAS = -2.7 A, VDD = -50 V, RG = 25 Ω, starting TJ = 25°C.3. ISD ≤ -2.7 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.4. Essentially independent of operating temperature.
Notes:
Part Number Top Mark Package Reel Size Tape Width QuantityTO-220 N/A N/A 50 units
Packing MethodTube
( N ote 4)
( Note 4)
Elerical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -500 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature Coefficient
ID = -250 µA, Referenced to 25°C -- 0.42 -- V/°C
IDSSZero Gate Voltage Drain Current
VDS = -500 V, VGS = 0 V -- -- -1 µA
VDS = -400 V, TC = 125°C -- -- -10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA
On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V
RDS(on) Static Drain-Source On-Resistance
VGS = -10 V, ID = -1.35 A -- 3.9 4.9 Ω
gFS Forward Transconductance VDS = -50 V, ID = -1.35 A -- 2.35 -- S
Dynamic CharacteristicsCiss Input Capacitance VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 510 660 pF
Coss Output Capacitance -- 70 90 pF
Crss Reverse Transfer Capacitance -- 9.5 12 pF
Switching Characteristics td(on) Turn-On Delay Time
VDD = -250 V, ID = -2.7 A,
RG = 25 Ω
-- 12 35 ns
tr Turn-On Rise Time -- 56 120 ns
td(off) Turn-Off Delay Time -- 35 80 ns
tf Turn-Off Fall Time -- 45 100 ns
Qg Total Gate Charge VDS = -400 V, ID = -2.7 A,
VGS = -10 V
-- 18 23 nC
Qgs Gate-Source Charge -- 3.6 -- nC
Qgd Gate-Drain Charge -- 9.2 -- nC
Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- -2.7 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -10.8 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.7 A -- -- -5.0 V
trr Reverse Recovery Time VGS = 0 V, IS = -2.7 A,
dIF / dt = 100 A/µs
-- 270 -- ns
Qrr Reverse Recovery Charge -- 1.5 -- µC
FQP3P50 FQP3P50
2.4©2000 Fairchild Semiconductor Corporation FQP3P50 Rev.
www.fairchildsemi.com3
FQP3P50 —
P-Channel Q
FET® M
OSFET
0 2 4 6 8 10 21 41 16 81 200
2
4
6
8
10
12
VDS
= -250V
VDS
= -100V
VDS
= -400V
※ Note : ID = -2.7 A
-VG
S, G
ate-
Sou
rce
Vol
tage
[V]
QG, Total Gate Charge [nC]
10-1 0
101
0
200
400
600
800
1000
1200C
iss = C
gs + C
gd (C
ds = shorted)
Coss
= Cds
+ Cgd
Crss
= Cgd
※ Notes : 1. V
GS = 0 V
2. f = 1 MHzCrss
Coss
Ciss
Cap
acita
nce
[pF]
10
VDS
, Drain-Source Voltage [V]
0.0 0.5 1.0 1.5 2.0 2.5 3.010
-1
100
101
150※ Notes : 1. V
GS = 0V
2. 250μs Pulse Test
25
-ID
R ,
Rev
erse
Dra
in C
urre
nt [
A]
-VSD
, Source-Drain Voltage [V]
420002
3
4
5
6
7
8
※ Note : TJ = 25
VGS
= - 20V
VGS
= - 10V
RD
S(o
n) [
Ω],
Dra
in-S
ourc
e O
n-R
esis
tanc
e
-ID , Drain Current [A]
2 6 84 1010
-1
100
101
150
25
-55 ※ Notes : 1. V
DS = -50V
2. 250μs Pulse Test
-ID ,
Dra
in C
urre
nt [
A]
-VGS
, Gate-Source Voltage [V]10
-110
010
110
-2
10-1
100
101
VGS
Top : -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V
Bottom : -5.5 V
※ Notes : 1. 250μs Pulse Test 2. TC = 25
-ID, D
rain
Cur
rent
[A]
-VDS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
2.4©2000 Fairchild Semiconductor Corporation FQP3P50 Rev.
www.fairchildsemi.com4
FQP3P50 —
P-Channel Q
FET® M
OSFET
(Continued)Typical Characteristics
1 0-5
1 0-4
1 00
1 01
1 0-2
1 0-1
1 00
※ N o te s : 1 . Z θ J C
( t ) = 1 4 7.4 /W M a x . 2 . D u ty F a c to r , D = t
1/ t
2
3 . TJ M
- TC
= PD M
* Z θ J C( t )
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
1 0-3
1 0-2
1 0-1
t1, S q u a re W a v e P u ls e D u ra t io n [s e c ]
25 50 75 100 125 1500.0
0.5
1.0
1.5
2.0
2.5
3.0
-ID, D
rain
Cur
rent
[A]
TC, Case Temperature []
100
101
102
103
10-2
10-1
100
101
DC
10 ms
1 ms
100 µs
Operation in This Area is Limited by R
DS(on)
※ Notes :
1. TC = 25
oC
2. TJ = 150
oC
3. Single Pulse
-ID, D
rain
Cur
rent
[A]
-VDS
, Drain-Source Voltage [V]
-100 -50 0 50 100 150 2000.0
0.5
1.0
1.5
2.0
2.5
※ Notes : 1. V
GS = -10 V
2. ID = -1.35 A
RD
S(O
N), (
Nor
mal
ized
)D
rain
-Sou
rce
On-
Res
ista
nce
TJ, Junction Temperature [
oC]
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
※ Notes : 1. V
GS = 0 V
2. ID = -250 μA
-BV
DSS
, (N
orm
aliz
ed)
Dra
in-S
ourc
e Br
eakd
own
Volta
ge
TJ, Junction Temperature [
oC]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs. Case Temperature
Figure 7. Breakdown Voltage Variationvs. Temperature
Figure 8. On-Resistance Variationvs. Temperature
Figure 11. Transient Thermal Response Curve
t1
PDM
t2
Z JC
(t), T
herm
al R
espo
nse
[o C/W
]
2.4©2000 Fairchild Semiconductor Corporation FQP3P50 Rev.
www.fairchildsemi.com5
FQP3P50 —
P-Channel Q
FET® M
OSFET
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VVDSDS
VVGSGS1010%%
90%90%
ttd(d(onon)) ttrr
tt onon tt ofofff
ttd(d(ofofff)) ttffVVDDDD
VVDSDS
RRLL
DUTDUT
RRGG
VVGSGS
ChChargargee
VVGSGS
QQgg
QQgsgs QQgdgdVVGSGS
DUDUTT
VVDSDS
300300nFnF
50K50KΩΩ
200n200nFF12V12V
SamSamee T Tyypepeas as DUDUTT
EEEAS AS AS ----=== 21212121------------ LLL ASASASIII
BVBVDSDSSS222 ----------------------------------------
BVBVDSDSSS - V- VDDDD
VVDDDD
VVDSDS
BVBVDSSDSS
t t pp
VVDDDD
IIASAS
VVDS DS (t)(t)
IID D (t(t))
TiTimmee
DUDUTT
RRGG
LLL
III DDD
t t pp
IG = const.
VVGSGS
VVGSGS
2.4©2000 Fairchild Semiconductor Corporation FQP3P50 Rev.
www.fairchildsemi.com6
FQP3P50 —
P-Channel Q
FET® M
OSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
••
DUTDUT
VVDSDS
++
__
DrivDrivererRRGG
ComCompplliimmentent ofof DUTDUT (N-(N-CChannelhannel))
VVGSGS •• ddvv//dtdt ccoontntrroolllleed d bbyy RRGG
IISDSD ccononttrrolollleded byby pupullsse e peperriiodod
VVDDDD
LLLII SDSD
1010VVVVGSGS
( ( DrivDriver er ))
II SDSD
( ( DUT DUT ))
VVDSDS
( ( DUT DUT ))
VVDDDDBoBodydy DDiiooddee
ForForwward ard VVololttagage e DrDropop
IIFMFM ,, BoBodydy DDiiodode e FFororwwaarrd d CCuurrrrenentt
VVSDSD
BoBodydy DDiiodode e RReevveerrssee CCuurrrrenentt
IIRMRM
BoBodydy DiDiodode e RReecovcoveerryy dvdv/d/dtt
didi//dtdt
D D D === ---------GateGateGate--------------------------- PPPulululsss------------------------e e e WWWiiiddd---------------ttthhh---GaGaGate te te PuPuPulllssseee PePePerrriiiododod
2.4©2000 Fairchild Semiconductor Corporation FQP3P50 Rev.
www.fairchildsemi.com7
FQP3P50 —
P-Channel Q
FET® M
OSFET
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation ABPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003
2.4©2000 Fairchild Semiconductor Corporation FQP3P50 Rev.
8
FQP3P50 —
P-Channel Q
FET® M
OSFET
www.fairchildsemi.com
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
AccuPower™AttitudeEngine™Awinda®
AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®
Dual Cool™EcoSPARK®
EfficentMax™ESBC™
Fairchild®
Fairchild Semiconductor®FACT Quiet Series™FACT®
FastvCore™FETBench™FPS™
F-PFS™FRFET®
Global Power ResourceSM
GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™MotionGrid®
MTi®MTx®
MVN®
mWSaver®OptoHiT™OPTOLOGIC®
OPTOPLANAR®
Power Supply WebDesigner™PowerTrench®
PowerXS™Programmable Active Droop™QFET®
QS™Quiet Series™RapidConfigure™
Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®
STEALTH™SuperFET®
SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®
SyncFET™Sync-Lock™
®*
TinyBoost®TinyBuck®
TinyCalc™TinyLogic®
TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*μSerDes™
UHC®
Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™Xsens™仙童 ®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
™
Rev. I77
TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
tm
®
AUTHORIZED USEUnless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customer’s use of this product is subject to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild’s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be subject to Fairchild’s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties.
ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Terms of UseCounterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handling and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
2.4©2000 Fairchild Semiconductor Corporation FQP3P50 Rev.
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor:
FQP3P50
Top Related