©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comFQP12N60C / FQPF12N60C Rev. B1
FQP12N
60C / FQ
PF12N60C
600V N-C
hannel MO
SFET
September 2007
QFET ®
FQP12N60C / FQPF12N60C 600V N-Channel MOSFETFeatures• 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V• Low gate charge ( typical 48 nC)• Low Crss ( typical 21pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• RoHS compliant
DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary, planarstripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology.
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
TO-220FFQPF Series
G SD
D
G
S
Symbol Parameter FQP12N60C FQPF12N60C UnitVDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C)- Continuous (TC = 100°C)
127.4
12*7.4*
AA
IDM Drain Current - Pulsed (Note 1) 48 48* A
VGSS Gate-Source voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 870 mJ
IAR Avalanche Current (Note 1) 12 A
EAR Repetitive Avalanche Energy (Note 1) 22.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)- Derate above 25°C
2251.78
510.41
WW/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds 300 °C
Symbol Parameter FQP12N60C FQPF12N60C UnitRθJC Thermal Resistance, Junction-to-Case 0.56 2.43 °C/W
RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
TO-220FQP Series
GSD
2 www.fairchildsemi.comFQP12N60C / FQPF12N60C Rev. B1
FQP12N
60C / FQ
PF12N60C
600V N-C
hannel MO
SFET
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C3. ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking Device Package Reel Size Tape Width QuantityFQP12N60C FQP12N60C TO-220 - - 50
FQPF12N60C FQPF12N60C TO-220F - - 50
Symbol Parameter Conditions Min Typ Max UnitsOff Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V
∆BVDSS/ ∆TJ
Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.5 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0VVDS = 480V, TC = 125°C
----
----
110
µAµA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 -- 4.0 V
RDS(on) Static Drain-SourceOn-Resistance VGS = 10V, ID = 6A -- 0.53 0.65 Ω
gFS Forward Transconductance VDS = 40V, ID = 6A (Note 4) -- 13 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V,f = 1.0MHz
-- 1760 2290 pF
Coss Output Capacitance -- 182 235 pF
Crss Reverse Transfer Capacitance -- 21 28 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300V, ID = 12ARG = 25Ω
(Note 4, 5)
-- 30 70 ns
tr Turn-On Rise Time -- 85 180 ns
td(off) Turn-Off Delay Time -- 140 280 ns
tf Turn-Off Fall Time -- 90 190 ns
Qg Total Gate Charge VDS = 400V, ID = 12AVGS = 10V
(Note 4, 5)
-- 48 63 nC
Qgs Gate-Source Charge -- 8.5 -- nC
Qgd Gate-Drain Charge -- 21 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- -- 12 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 12A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 12AdIF/dt =100A/µs (Note 4)
-- 420 -- ns
Qrr Reverse Recovery Charge -- 4.9 -- µC
3 www.fairchildsemi.comFQP12N60C / FQPF12N60C Rev. B1
FQP12N
60C / FQ
PF12N60C
600V N-C
hannel MO
SFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward VoltageDrain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
100 101
100
101
VGSTop : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 VBottom : 4.5 V
Notes :※ 1. 250µs Pulse Test 2. TC = 25
I D, D
rain
Cur
rent
[A]
VDS, Drain-Source Voltage [V]
2 4 6 8 1010-1
100
101
150oC
25oC-55oC
Notes :※ 1. VDS = 40V 2. 250µs Pulse Test
I D, D
rain
Cur
rent
[A]
VGS, Gate-Source Voltage [V]
0 5 10 15 20 25 30 35
0.5
1.0
1.5
VGS = 20V
VGS = 10V
Note : T※ J = 25
RDS
(ON) [Ω
],D
rain
-Sou
rce
On-
Res
ista
nce
ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
150
Notes :※ 1. VGS = 0V 2. 250µs Pulse Test
25
I DR, R
ever
se D
rain
Cur
rent
[A]
VSD, Source-Drain voltage [V]
10-1 100 1010
500
1000
1500
2000
2500
3000
3500Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd
Notes ;※ 1. VGS = 0 V 2. f = 1 MHzCrss
Coss
Ciss
Cap
acita
nce
[pF]
VDS, Drain-Source Voltage [V]
0 10 20 30 40 500
2
4
6
8
10
12
VDS = 300V
VDS = 120V
VDS = 480V
Note : I※ D = 12A
V GS,
Gat
e-So
urce
Vol
tage
[V]
QG, Total Gate Charge [nC]
4 www.fairchildsemi.comFQP12N60C / FQPF12N60C Rev. B1
FQP12N
60C / FQ
PF12N60C
600V N-C
hannel MO
SFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area for FQP12N60C for FQPF12N60C
Figure 10. Maximum Drain Current vs. Case Temperature
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
Notes :※ 1. VGS = 0 V 2. ID = 250 µA
BVDS
S, (N
orm
aliz
ed)
Dra
in-S
ourc
e Br
eakd
own
Volta
ge
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 2000.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :※ 1. VGS = 10 V 2. ID = 6.0 A
RDS
(ON), (
Nor
mal
ized
)D
rain
-Sou
rce
On-
Res
ista
nce
TJ, Junction Temperature [oC]
100 101 102 10310-2
10-1
100
101
102
100 ms
10 µs
DC
10 ms1 ms
100 µs
Operation in This Area is Limited by R DS(on)
Notes :※
1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse
I D, D
rain
Cur
rent
[A]
VDS, Drain-Source Voltage [V]100 101 102 103
10-2
10-1
100
101
102
100 ms
10 µs
DC
10 ms1 ms
100 µs
Operation in This Area is Limited by R DS(on)
Notes :※
1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse
I D, D
rain
Cur
rent
[A]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 1500
2
4
6
8
10
12
14
I D, D
rain
Cur
rent
[A]
TC, Case Temperature [ ]
5 www.fairchildsemi.comFQP12N60C / FQPF12N60C Rev. B1
FQP12N
60C / FQ
PF12N60C
600V N-C
hannel MO
SFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP12N60C
Figure 11-2. Transient Thermal Response Curve for FQPF12N60C
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1
1 0 -2
1 0 -1
1 0 0
N o tes :※ 1 . Z θ JC(t) = 0 .56 /W M a x . 2 . D u ty F a c to r, D = t1/t2 3 . T JM - T C = P D M * Z θ JC(t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z θJC
(t), T
herm
al R
espo
nse
t 1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
t1
PDM
t2
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1
1 0 -2
1 0 -1
1 0 0
N o tes :※ 1 . Z θ JC(t) = 2 .43 /W M ax . 2 . D u ty F ac to r, D = t1/t2 3 . T JM - T C = P D M * Z θ JC(t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z θJC
(t), T
herm
al R
espo
nse
t 1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
t1
PDM
t2
6 www.fairchildsemi.comFQP12N60C / FQPF12N60C Rev. B1
FQP12N
60C / FQ
PF12N60C
600V N-C
hannel MO
SFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
7 www.fairchildsemi.comFQP12N60C / FQPF12N60C Rev. B1
FQP12N
60C / FQ
PF12N60C
600V N-C
hannel MO
SFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
8 www.fairchildsemi.comFQP12N60C / FQPF12N60C Rev. B1
FQP12N
60C / FQ
PF12N60C
600V N-C
hannel MO
SFET
Mechanical Dimensions
Dimensions in Millimeters
TO - 220
9 www.fairchildsemi.comFQP12N60C / FQPF12N60C Rev. B1
FQP12N
60C / FQ
PF12N60C
600V N-C
hannel MO
SFET
Mechanical Dimensions (Continued)
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30
±0.
1015
.80
±0.2
0
15.8
7 ±0
.20
6.68
±0.
20
9.75
±0.
30
4.70
±0.
20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.200.35 ±0.10
ø3.18 ±0.10
2.54TYP[2.54 ±0.20]
2.54TYP[2.54 ±0.20]
0.50+0.10–0.05
TO-220F
Dimensions in Millimeters
10 www.fairchildsemi.com10 www.fairchildsemi.com
FQP12N
60C / FQ
PF12N60C
600V N-C
hannel MO
SFET
FQP12N60C / FQPF12N60C Rev. B1
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LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES ORSYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or (b)support or sustain life, and (c) whose failure to perform whenproperly used in accordance with instructions for use providedin the labeling, can be reasonably expected to result in asignificant injury to the user.
2. A critical component in any component of a life support,device, or system whose failure to perform can be reasonablyexpected to cause the failure of the life support device orsystem, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms
ACEx®
Build it Now™CorePLUS™CROSSVOLT™CTL™Current Transfer Logic™EcoSPARK®
Fairchild®
Fairchild Semiconductor®FACT Quiet Series™FACT®
FAST®
FastvCore™FPS™FRFET®
Global Power ResourceSM
Green FPS™Green FPS™ e-Series™GTO™i-Lo™IntelliMAX™ISOPLANAR™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MillerDrive™Motion-SPM™OPTOLOGIC®
OPTOPLANAR®®
PDP-SPM™Power220®
Power247®
POWEREDGE®
Power-SPM™PowerTrench®
Programmable Active Droop™QFET®
QS™QT Optoelectronics™Quiet Series™RapidConfigure™SMART START™SPM®
STEALTH™SuperFET™SuperSOT™-3SuperSOT™-6
SuperSOT™-8SyncFET™The Power Franchise®
TinyBoost™TinyBuck™TinyLogic®
TINYOPTO™TinyPower™TinyPWM™TinyWire™µSerDes™UHC®
UniFET™VCX™
®
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary First ProductionThis datasheet contains preliminary data; supplementary data will be pub-lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontin-ued by Fairchild Semiconductor. The datasheet is printed for reference infor-mation only.
Rev. I31
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