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(-482) 1
C. C. Katsidis (ETY-482)
A. .
0 , VL ,
1 , VH.
, 0
, VH , 1 , VL.
(OR)
A B Y 0 0 0 0 1 1 1 0 1 1 1 1
(OR)
(OR) A B Y
VH VH VH VH VL VL VL VH VL VL VL VL
(AND) A B Y 0 0 0 0 1 0 1 0 0 1 1 1
A B Y VL VL VL VL VH VH VH VL VH VH VH VH
(-482) 2
C. C. Katsidis (ETY-482)
(AND)
(AND) A B Y
VH VH VH VH VL VH VL VH VH VL VL VL
(OR) A B Y 0 0 0 0 1 1 1 0 1 1 1 0
(OR)
(OR) A B Y
VH VH VH VH VL VL VL VH VL VL VL VH
OXI (NOT)
A Y 0 1 1 0
A B Y VL VL VL VL VH VL VH VL VL VH VH VH
A B Y VL VL VL VL VH VH VH VL VH VH VH VL
(-482) 3
C. C. Katsidis (ETY-482)
OXI (NOT)
A Y VL VH VH VL
OXI (NOT)
A Y VH VL VL VH
(OR)
A B C Y 0 0 0 0 0 0 1 1 0 1 0 1 0 1 1 1 1 0 0 1 1 0 1 1 1 1 0 1 1 1 1 1
OXI (NOR)
A B C Y 0 0 0 1 0 0 1 0 0 1 0 0 0 1 1 0 1 0 0 0 1 0 1 0 1 1 0 0 1 1 1 0
(-482) 4
C. C. Katsidis (ETY-482)
KAI (AND)
A B C Y 0 0 0 0 0 0 1 0 0 1 0 0 0 1 1 0 1 0 0 0 1 0 1 0 1 1 0 0 1 1 1 1
OXI KAI (NAND)
A B C Y 0 0 0 1 0 0 1 1 0 1 0 1 0 1 1 1 1 0 0 1 1 0 1 1 1 1 0 1 1 1 1 0
. , DL (Diode-
Logic configuration) .
1. OR .
(-482) 5
C. C. Katsidis (ETY-482)
OR, "1"
"1".
, "0"
"0".
1
"1" ( VL)
,
( "1").
( )
"1" :
( )R A KR on R
i f
V V VV I R V RR r R
+
= = + + (1)
VK (0.2V
0.6V ) , rf,
.
i fR R r+ , :
('1')A K K L KV V V V V V + = + = + (2)
"0"
( V) VR=VH,
= VR=VH,
"0".
(-482) 6
C. C. Katsidis (ETY-482)
2. OR .
2 OR .
VR
"0"
, VL.
VH,
"1", , ,
( "1") .
VH
Ri
.
low, "0",
Y VR,
low, "0".
(-482) 7
C. C. Katsidis (ETY-482)
3. AND .
H AND 3
OR
2.
AND "1"
"1".
"0".
, "1" ( , VL,
)
VR=VL, ( "1"). ,
"0", VH,
,
( "0") VH-VK.
(-482) 8
C. C. Katsidis (ETY-482)
4. AND .
, AND
4 OR
1.
"1" ,
VH
VR (=VH) "1". ,
(
"0" ),
VH+VK.
. NOT .
5, npn
(-482) 9
C. C. Katsidis (ETY-482)
VBB= 12V, VH
"1".
5. , NOT.
"0"
VL (=0Volt),
.
2
1 2
( )B BBR V
R R =
+ (3)
,
VCC ( "1")
.
"1"
V (=12Volt),
.
=CE(SAT) 0.2Volt ( "0").
(-482) 10
C. C. Katsidis (ETY-482)
:
( )( )
0.2CC CE SAT CCC SAT
C C
V VIR R
= (4)
R1 R2 :
( )1
1 1
0.8A BE SAT HV VIR R
= (5)
( )2
2 2
( ) 0.8BE SAT BB BBV VIR R
+= (6)
:
( )1 2
C SATB
II I I
= = (7)
R1=15K, R2=100K, RC=2.2K, -VBB=-12V, VCC=12V.
. DTL, TTL & RTL.
DTL
6 NAND DTL.
AND
4 5.
R1,
.
(-482) 11
C. C. Katsidis (ETY-482)
6. NAND DTL.
.
7. NAND DTL
(-482) 12
C. C. Katsidis (ETY-482)
6,
, 7
D1 D2.
R2
.
: RD=5K, RC=2.2K, R2=5K VCC=VH=5V.
NAND (
AND),
( "0")
( "1"). ,
( "1") ( "0").
,
( "0")
( VL
).
, , (VL+VD). VD
. ,
D1 D2
Q =0
VY=VCC=VH,
( "1").
( "1")
VCC.
D1 D2
, , .
(-482) 13
C. C. Katsidis (ETY-482)
Q
, CE(SAT),
"0".
.
,
7 :
( "1") D1 D2
( "0").
:
1 2 ( ) 0.7 0.7 0.8 2.2D D BE SATV V V V Volt = + + = + + = (8)
( ) 0.8BE SATV Volt= (9) Q
.
1 :
12.2CC CC
D D
V V VIR R
= = (10)
2 :
( )2
2 2
0.8BE SATVIR R
= (11)
:
1 22
2.2 0.8CCB
D
VI I IR R
= = (12)
(-482) 14
C. C. Katsidis (ETY-482)
:
( ) 0.2CC CE SAT CCC
C C
V V VIR R
= = (13)
12 13
:
min2
0.2 2.2 0.8C CC CCC DB
I V VR R RI
= = (14)
D1 D2 .
D1 D2 Q
.
:
0.2 0.7 0.9L DV V Volt = + = + = (15) (
D1 D2 )
:
0.9 0.6 0.3BEV V V Volt = = = (16) VK(=0.6Volt) (:
0.7Volt ).
VK (=VBE) = 0.5 Volt
0.3Volt
D1 D2. 0.2 Volt
0.5 Volt
(-482) 15
C. C. Katsidis (ETY-482)
:
0.9 0.6 0.6 0.3BEV V V V Volt = = = (17)
()
()
8. ) NAND DTL
D1 7
. )
.
(-482) 16
C. C. Katsidis (ETY-482)
VBE
0.2 0.8 Volt.
.
8 DTL NAND
Q2
(IC2).
: RD1=1.75K, RD2=2K, RC2=2.2K, R2=5K, VCC=5V.
NAND
.
8,
Q2 NAND ()
NAND
.
13
NAND
(IC=IC(0)). NAND
NAND
NAND
NAND
Q2 ( NAND)
( 8)
Q2 ..
,
Q2
. :
(-482) 17
C. C. Katsidis (ETY-482)
( ) (0)C N CI I NI= + (18)
:
1 2 1 2 1 2
0.7 0.9CC D Y CC L CCD D D D D D
V V V V V VIR R R R R R
= = =+ + + (19)
Q2
,
NAND :
( ) (0) 2C N C BI I NI I= + =
21 2
0.2 0.9CC CCB
C D D
V VN IR R R
+ =+ (20)
Q2 D1
Q1.
, Q1
. :
1( ) 2 2( ) 0.7 0.7 0.8 2.2BE ACT D BE SATV V V V Volt = + + = + + = . (21)
1 2 :
1 1 1C BI I I= + , 2 2( ) 2 2/ 0.8 /BE SATI V R R= (22) Q2:
2 1 2 1 1 20.8 /B C BI I I I I R= = + (23)
(-482) 18
C. C. Katsidis (ETY-482)
, Q1 D1
Q2
.
HT-DTL NAND.
9. NAND HT-DTL (High Threshold
DTL) Zener
.
,
8
D2 Zener.
.
RD1=3K, RD2=12K, RC2=15K, VZ=6.9V,R2=5K.
(-482) 19
C. C. Katsidis (ETY-482)
TTL NAND.
10. TTL NAND
TTL NAND 10,
DTL-NAND 7.
: RB1=4K, RC2=1.4K, RC3=4K,
R2=1K.
DTL-NAND 7
(Transistor-Transistor Logic
- TTL).
D2 ( 7) -
Q2. D1 pn
- Q1 .
A, B, C
pn - Q1.
(-482) 20
C. C. Katsidis (ETY-482)
TTL NAND.
(
"0") :
1 0.2 0.7 0.9L BEV V V Volt = + + = (24)
- Q1 Q2
Q3 V =
0.7+0.7+0.7=2.1Volt. Q2 Q3
,
"1" ( VH=VCC=5Volt).
Q1 (
-) ( -
) .
,
- Q1 . V
VCC Q2 Q3 .
, VY = VCE3(SAT) = 0.2V = VL ( "0").
.
Q2 -
-
Q2 Q3
.
,
Q2 Q3
.
Q1 :
(-482) 21
C. C. Katsidis (ETY-482)
1 2( ) 3( ) 0.8 0.8 1.6C BE SAT BE SATV V V Volt= + + = (25)
"1" "0" , VL0.2Volt
24 Q1 V1= V
=0.9Volt VBC1=VB1-VC1=0.9-1.6=-0.7 . ,
(p-) (n-)
. ,
.
TTL NAND TOTEM.
11. TTL NAND
TOTEM.
(-482) 22
C. C. Katsidis (ETY-482)
, Q1 ,
RB1 VCC AND.
.
: RB1=4K, RC2=1.6K, RC3=130,
R2=1K.
Q3 Q4 Totem (
npn npn )
TTL. Totem
Q3 Q4 Q3 Q4.
Q3 Q4
. ( ) Q4
Q3 .
& ,
VL, Q1
Q1 VB1=VL+0.7Volt.
, Q2
Q1 Q2
, Q3
(
1.5V ):
3 3 1Y B BE DV V V V= (26) ( "1")
. Q2
Q4
Q3 .
(-482) 23
C. C. Katsidis (ETY-482)
( "0"). D1
Q3 Q4
- Q3. Q2 Q4
:
3 4( ) 2( ) 1B BE SAT CE SATV V V Volt= + (27)
3 4( ) 1 0.9E CE SAT DV V V Volt= + (28) Q3 .
TTL NOR.
12. TTL NOR
TOTEM.
(-482) 24
C. C. Katsidis (ETY-482)
TTL NOR TTL
NAND ( Q5 Q6).
: RB1=4, RB5=4K, RC2=1.6K,
RC3=130, R2=1K.
Q2 Q6
OR.
,
NOR.
, VL,
Q1 Q5
VL+0.7 Volt Q2 Q6.
Q3
.
( )
(Q1 Q5)
Q2 Q6 .
Q2 Q6
Q4
.
(-482) 25
C. C. Katsidis (ETY-482)
RTL NOR
13. NOR RTL
: RC=600,
RB=400, VCC=3.6V.
( "0"),
VCC ( "1").
,
CE(SAT) .
RTL (Resistor Transistor Logic)
wafer
.
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