TO-247

12

3

C(2, TAB)

E(3)NG1E3C2T

G(1)

Features• Maximum junction temperature: TJ = 175 °C• 10 μs of short-circuit withstand time• Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A• Tight parameter distribution• Positive VCE(sat) temperature coefficient• Low thermal resistance• Soft- and fast-recovery antiparallel diode

Applications• Industrial drives• UPS• Solar• Welding

DescriptionThis device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimalbalance between inverter system performance and efficiency where the low-loss andthe short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer parallelingoperation.

Product status link

STGW25M120DF3

Product summary

Order code STGW25M120DF3

Marking G25M120DF3

Package TO-247

Packing Tube

Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package

STGW25M120DF3

Datasheet

DS10300 - Rev 4 - November 2019For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 1200 V

ICContinuous collector current at TC = 25 °C 50 A

Continuous collector current at TC = 100 °C 25 A

ICP(1) Pulsed collector current 100 A

VGEGate-emitter voltage ±20 V

Transient gate-emitter voltage ±30 V

IFContinuous forward current at TC = 25 °C 50 A

Continuous forward current at TC = 100 °C 25 A

IFP(1) Pulsed forward current 100 A

PTOT Total power dissipation at TC = 25 °C 375 W

TSTG Storage temperature range -55 to 150 °C

TJ Operating junction temperature range -55 to 175 °C

1. Pulse width is limited by maximum junction temperature.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJCThermal resistance junction-case IGBT 0.4 °C/W

Thermal resistance junction-case diode 0.96 °C/W

RthJA Thermal resistance junction-ambient 50 °C/W

STGW25M120DF3Electrical ratings

DS10300 - Rev 4 page 2/16

2 Electrical characteristics

TJ = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 2 mA 1200 V

VCE(sat)Collector-emitter saturationvoltage

VGE = 15 V, IC = 25 A 1.85 2.3

V

VGE = 15 V, IC = 25 A,

TJ = 125 °C2.1

VGE = 15 V, IC = 25 A,

TJ = 175 °C2.2

VF Forward on-voltage

IF = 25 A 2.95 4.1

VIF = 25 A, TJ = 125 °C 2.25

IF = 25 A, TJ = 175 °C 1.9

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitanceVCE = 25 V, f = 1 MHz,

VGE = 0 V

- 1550 -

pFCoes Output capacitance - 180 -

Cres Reverse transfer capacitance - 65 -

Qg Total gate charge VCC = 960 V, IC = 25 A,

VGE = 0 to 15 V

(see Figure 29. Gate charge testcircuit)

- 85 -

nCQge Gate-emitter charge - 11.5 -

Qgc Gate-collector charge - 45.5 -

STGW25M120DF3Electrical characteristics

DS10300 - Rev 4 page 3/16

Table 5. IGBT switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VCE = 600 V, IC = 25 A,

VGE = 15 V, RG = 15 Ω

(see Figure 28. Test circuit forinductive load switching)

28 - ns

tr Current rise time 15 - ns

(di/dt)on Turn-on current slope 1370 - A/µs

td(off) Turn-off delay time 150 - ns

tf Current fall time 155 - ns

Eon(1) Turn-on switching energy 0.85 - mJ

Eoff(2) Turn-off switching energy 1.3 - mJ

Ets Total switching energy 2.15 - mJ

td(on) Turn-on delay time

VCE = 600 V, IC = 25 A,

VGE = 15 V, RG = 15 Ω,

TJ = 175 °C

(see Figure 28. Test circuit forinductive load switching)

28 - ns

tr Current rise time 17 - ns

(di/dt)on Turn-on current slope 1270 - A/µs

td(off) Turn-off delay time 155 - ns

tf Current fall time 240 - ns

Eon(1) Turn-on switching energy 1.6 - mJ

Eoff(2) Turn-off switching energy 1.9 - mJ

Ets Total switching energy 3.5 - mJ

tsc Short-circuit withstand timeVCC ≤ 600 V, VGE = 15 V,

TJstart ≤ 150 °C10 - µs

1. Including the reverse recovery of the diode2. Including the tail of the collector current

Table 6. Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time

IF = 25 A, VR = 600 V,

VGE = 15 V, di/dt = 1000 A/µs

(see Figure 28. Test circuit forinductive load switching)

- 265 - ns

Qrr Reverse recovery charge - 1.2 - µC

Irrm Reverse recovery current - 19 - A

dIrr/dt Peak rate of fall of reverserecovery current during tb

- 1090 - A/µs

Err Reverse recovery energy - 0.22 - mJ

trr Reverse recovery timeIF = 25 A, VR = 600 V,

VGE = 15 V, TJ = 175 °C,

di/dt = 1000 A/µs

(see Figure 28. Test circuit forinductive load switching)

- 585 - ns

Qrr Reverse recovery charge - 5 - µC

Irrm Reverse recovery current - 30 - A

dIrr/dt Peak rate of fall of reverserecovery current during tb

- 270 - A/µs

Err Reverse recovery energy - 0.75 - mJ

STGW25M120DF3Electrical characteristics

DS10300 - Rev 4 page 4/16

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

Ptot

240

160

80

00 50 100

(W)

320

150 TC(°C)

VGE ≥ 15 V, TJ ≤ 175 °C

GIPD301020140906FSR

Figure 2. Collector current vs case temperature

IC

30

20

10

00 50 100

(A)

40

150 TC(°C)

50VGE ≥ 15 V, TJ ≤ 175 °C

GIPD301020140909FSR

Figure 3. Output characteristics (TJ = 25 °C)

IC

60

40

20

00 1 3

(A)

2 4

80

VCE(V)

9V

11V

13VVGE=15V

5

7V

GIPD301020140913FSR

Figure 4. Output characteristics (TJ = 175 °C)

IC

80

60

20

00 1 3

(A)

2 4 VCE(V)

409V

11V

13VVGE=15V

5

7V

GIPD301020140919FSR

Figure 5. VCE(sat) vs junction temperature

VCE(sat)

2.0

1.2-50 0 100

(V)

50 150

2.4

TC(°C)

1.6

2.8

VGE=15V

IC=12.5A

IC=50A

IC=25A

3.2

GIPD301020140924FSR

Figure 6. VCE(sat) vs collector current

1.6

0.80 10 3020 40

2.0

IC(A)

1.2

2.4

VGE=15V Tj=175°C

Tj=25°C

Tj=-40°C

VCE(sat) (V)

2.8

3.2

GIPD301020141133FSR

STGW25M120DF3Electrical characteristics (curves)

DS10300 - Rev 4 page 5/16

Figure 7. Collector current vs switching frequency

IC

60

20

01

(A)

10 f(kHz)

40

TC=80°C

TC=100°C

Rectangular current shape,(duty cycle=0.5, Vcc= 600V Rg=15Ω, Vge=0/15V, Tj=175 °C)

GIPD301020141144FSR

Figure 8. Safe operating area

IC

10

1

(A)

10 VCE(V)1

10µs

100µs

1ms

100

Single pulse, Tc=25°CTj<175°C, VGE=15V

1µs

1000

100

GIPD301020141151FSR

Figure 9. Transfer characteristics

IC

80

60

20

03

(A)

5 VGE(V)

40 Tj=175°C

Tj=25°C

7 9 11

VCE = 8V

GIPD301020141159FSR

Figure 10. Diode VF vs forward current

2

00 20 6040 80

3

IC(A)

1

4

Tj=175°C

Tj=25°C

Tj=-40°CVF (V)

5

6

GIPD301020141203FSR

Figure 11. Normalized VGE(th) vs junction temperature

VGE(th)

0.8

1.1

-50

(norm)

TC(°C)0.7

0

0.9

1.0

50 100 150

VCE=VGE

IC=1mA

GIPD301020141315FSR

Figure 12. Normalized V(BR)CES vs junction temperature

V(BR)CES

1.04

0.88-50

(norm)

TC(°C)

1.00

0 50 100 150

IC=2mA

0.92

0.96

GIPD301020141322FSR

STGW25M120DF3Electrical characteristics (curves)

DS10300 - Rev 4 page 6/16

Figure 13. Capacitance variations

C(pF)

100

0.1 VCE(V)1 10

1000

Cies

Coes

Cres10

100

f= 1MHz

GIPD301020141335FSR

Figure 14. Gate charge vs gate-emitter voltage

VGE(V)

00 Qg(nC)40 80

4

8

12

16

20 60

VCC = 960 VIC = 25 AIG = 1 mA

GIPD301020141341FSR

Figure 15. Switching energy vs collector current

E(mJ)

0.00 IC(A)

0.8

10 20

1.6

30 40

VCC=600V, VGE=15VRg=15Ω, Tj=175°C

2.4

3.2

Eon

Eoff

50

GIPD301020141347FSR

Figure 16. Switching energy vs gate resistance

E(mJ)

0 Rg(Ω)

1.4

10 201.0

1.8

30 40

VCC=600V, VGE=15VIC=25A, Tj=175°C

2.2

2.6

Eon

Eoff

50 60

GIPD301020141410FSR

Figure 17. Switching energy vs junction temperature

E(mJ)

TJ(°C)

1.0

500.8

1.2

100

VCC=600V, VGE=15VIC=25A, Rg=15Ω

1.4

1.6

1.8

Eon

Eoff

1500

GIPD301020141418FSR

Figure 18. Switching energy vs collector emitter voltage

E(mJ)

200 VCE(V)

1.5

400 6000.5

2.5

800

VGE=15V, Tj=175°CIC=25A, Rg=15Ω

Eon

Eoff

1.0

2.0

GIPD301020141422FSR

STGW25M120DF3Electrical characteristics (curves)

DS10300 - Rev 4 page 7/16

Figure 19. Short-circuit time and current vs VGE

tsc(µs)

9 VGE(V)

25

10 115

12

VCC ≤ 600VTJ ≤150 °C

Isc

tsc

15

35

13 14 15

100

20

60

140

Isc(A)GIPD301020141425FSR

Figure 20. Switching times vs collector current

t(ns)

0 IC(A)10 201

30 40

VCC=600V,Tj=175°C,

VGE=15VRg=15Ω

tdoff

tdon

10

tf

tr

50

100

GIPD301020141429FSR

Figure 21. Switching times vs gate resistance

t(ns)

0 Rg(Ω)10 20

100

30 40

VCC=600V,Tj=175°C,

VGE=15VIC=25A

tdoff

tdon

tr

tf

5010

60

GIPD301020141432FSR

Figure 22. Reverse recovery current vs diode currentslope

Irrm(A)

200 di/dt(A/µs)800 1400

24

2000

VCC=600V,Tj=175°C,

VGE=15VIF=25A

32

16

40

48

GIPD301020141437FSR

Figure 23. Reverse recovery time vs diode current slope

trr(ns)

200 di/dt(A/µs)800 1400

400

2000

VCC=600V,Tj=175°C,

VGE=15VIF=25A

500

300

600

700

GIPD301020141439FSR

Figure 24. Reverse recovery charge vs diode currentslope

Qrr(µC)

200 di/dt(A/µs)800 1400

4.4

2000

VCC=600V,Tj=175°C,

VGE=15VIF=25A

4.6

4.2

4.8

5.0

5.2

GIPD301020141442FSR

STGW25M120DF3Electrical characteristics (curves)

DS10300 - Rev 4 page 8/16

Figure 25. Reverse recovery energy vs diode current slope

Err(mJ)

200 di/dt(A/µs)800 1400

0.5

2000

VCC=600V,Tj=175°C,

VGE=15VIF=25A

0.6

0.4

0.7

0.8

0.9

GIPD301020141445FSR

Figure 26. Thermal impedance for IGBT

ZthTO2T_A

10 -1

10 -2

10 -5 10 -4 10 -3 10 -2 10 -1

K

tp (s)

δ = 0.5

δ = 0.2

δ = 0.1 δ = 0.05

δ = 0.02

δ = 0.01

Single pulse

Figure 27. Thermal impedance for diode

STGW25M120DF3Electrical characteristics (curves)

DS10300 - Rev 4 page 9/16

3 Test circuits

Figure 28. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 29. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 30. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

IC td(on)

ton

tr(Ion)

td(off)

toff

tf

tr(Voff)

tcross

90%

10%

Figure 31. Diode reverse recovery waveform

t

GADG180720171418SA

10%

VRRM

dv/dt

di/dt

IRRM

IF

trr

ts tf

Qrr

IRRM

STGW25M120DF3Test circuits

DS10300 - Rev 4 page 10/16

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

STGW25M120DF3Package information

DS10300 - Rev 4 page 11/16

4.1 TO-247 package information

Figure 32. TO-247 package outline

0075325_9

STGW25M120DF3TO-247 package information

DS10300 - Rev 4 page 12/16

Table 7. TO-247 package mechanical data

Dim.mm

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

ØP 3.55 3.65

ØR 4.50 5.50

S 5.30 5.50 5.70

STGW25M120DF3TO-247 package information

DS10300 - Rev 4 page 13/16

Revision history

Table 8. Document revision history

Date Version Changes

22-Apr-2014 1 Initial release.

31-Oct-2014 2

Document status promoted from preliminary to production data. Updated allthe document accordingly.

Added Section 2.1: Electrical characteristics (curves).

Updated Section 4: Package mechanical data.

18-Jun-2018 3

The part number STGWA25M120DF3 has been moved to a separatedatasheet, and the document has been updated accordingly.

Updated features list on cover page.

Updated Table 1. Absolute maximum ratings.

Minor text changes

20-Nov-2019 4Modified Table 3. Static characteristics.

Minor text changes.

STGW25M120DF3

DS10300 - Rev 4 page 14/16

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

STGW25M120DF3Contents

DS10300 - Rev 4 page 15/16

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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© 2019 STMicroelectronics – All rights reserved

STGW25M120DF3

DS10300 - Rev 4 page 16/16