X-ray nanodiffraction in lithographically-defined...
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k i k f q = k f - k i ω 2θ X-ray nanodiffraction in lithographically-defined semiconductor structures Daniel Chrastina 1,* , Valeria Mondiali 1 , Monica Bollani 2 , Jacopo Frigerio 1 , Marco Fiocco 1 , Emiliano Bonera 3 * - [email protected] http://lness.como.polimi.it/ 1. L-NESS Dipartimento di Fisica Polo Territoriale di Como, via Anzani 42, I-22100 Como 2. IFN-CNR, L-NESS, via Anzani 42, I-22100 Como 3. Dipartimento di Scienza dei Materiali and L-NESS, Universit à di Milano-Bicocca, I-20125 Milano Gilbert Chahine, Tobias Schülli ESRF Grenoble DefCon4 2011-0331 The continued progress of computing technologies continually requires new concepts which improve the performance, efficiency, and scalability of Si-based devices. Uniaxial strain obtained using local stressors has become part of mainstream Si-based technology over the past few years, since uniaxial strain in Si improves its figures of merit in terms of microelectronic applications. In this work, top down structures obtained by nanolithography ‑ are used as stressors for the creation of high deformation fields. Exploiting the fact that the Ge lattice parameter is 4.17% larger than that of Si, carefully shaped SiGe nanostructures can be used to locally induce uniaxial strain in Si. Nanofocused x-ray beams based on refractive or diffractive optics have recently become available at synchrotron light sources, allowing the distribution of strain within individual nanostructures to be measured directly. Patterning allows elastic strain relief Tensile strain induced in Si cap Compressive strain induced in Si substrate a Si a || ~ a a || > a Si a Si a || < a Si 10 nm Si 100 nm Si 0.7 Ge 0.3 Si(001) D. Scopece et al. Strained Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis , Semicond. Sci. Technol. 29 (2014) 095012. E. Bonera et al. Substrate strain manipulation by nanostructure perimeter forces , J. Appl. Phys. 113 (2013) 164308. M. Bollani et al. Lithographically-defined low dimensional SiGe nanostripes as silicon stressors , J. Appl. Phys. 112 (2012) 094318. D. Chrastina et al. Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction , Nanotechnology 23 (2012) 155702. ω ~ 90° would give smallest beam footprint, limited to < 55° by optical microscope 2θ ~ ω: “grazing exit” concentrates scattering near the surface of the sample ω 2θ Reciprocal Space Maps reconstructed from scanning of focused beam over structure Simulated RSMs calculated by kinematical diffraction over FEM displacement field. k i k f q = k f - k i ω 2θ Simulated “beam” scans over structures Comparison of RSMs allows strained SiGe and Si to be identified
Transcript of X-ray nanodiffraction in lithographically-defined...
kik
f
q = kf - k
i
ω2θ
X-ray nanodiffraction in lithographically-definedsemiconductor structures
Daniel Chrastina1,*, Valeria Mondiali1, Monica Bollani2, Jacopo Frigerio1,Marco Fiocco1, Emiliano Bonera3
* - [email protected] http://lness.como.polimi.it/1. L-NESS Dipartimento di Fisica Polo Territoriale di Como, via Anzani 42, I-22100 Como2. IFN-CNR, L-NESS, via Anzani 42, I-22100 Como3. Dipartimento di Scienza dei Materiali and L-NESS, Università di Milano-Bicocca, I-20125 Milano
Gilbert Chahine, Tobias Schülli ESRF Grenoble
DefCon4 2011-0331
The continued progress of computing technologies continually requires new concepts which improve the performance, efficiency, and scalability of Si-based devices. Uniaxial strain obtained using local stressors has become part of mainstream Si-based technology over the past few years, since uniaxial strain in Si improves its figures of merit in terms of microelectronic applications.In this work, top down structures obtained by nanolithography ‑are used as stressors for the creation of high deformation fields. Exploiting the fact that the Ge lattice parameter is 4.17% larger than that of Si, carefully shaped SiGe nanostructures can be used to locally induce uniaxial strain in Si.Nanofocused x-ray beams based on refractive or diffractive optics have recently become available at synchrotron light sources, allowing the distribution of strain within individual nanostructures to be measured directly.
Patterning allows elastic strain reliefTensile strain induced in Si capCompressive strain induced in Si substrate
aSi
a|| ~ a
a|| > aSi
aSi
a|| < aSi
10 nm Si100 nm Si
0.7Ge
0.3
Si(001)
D. Scopece et al. Strained Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis, Semicond. Sci. Technol. 29 (2014) 095012.E. Bonera et al. Substrate strain manipulation by nanostructure perimeter forces, J. Appl. Phys. 113 (2013) 164308.M. Bollani et al. Lithographically-defined low dimensional SiGe nanostripes as silicon stressors, J. Appl. Phys. 112 (2012) 094318.D. Chrastina et al. Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction, Nanotechnology 23 (2012) 155702.
ω ~ 90° would give smallest beam footprint, limited to < 55° by optical microscope
2θ ~ ω: “grazing exit” concentrates scattering near the surface of the sample
ω
2θ
Reciprocal Space Maps reconstructed from scanning of focused beam over structureSimulated RSMs calculated by kinematical diffraction over FEM displacement field.
kik
f
q = kf - k
i
ω2θ
Simulated “beam” scans over structuresComparison of RSMs allows strained SiGe and Si to be identified
