Vishay Siliconix 2019. 10. 13.آ  rrent (A) Power Derating 0 5 10 15 20 25 25 50 75 100 125 150 TC...

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  • Vishay Siliconix Si7232DN

    New Product

    Document Number: 68986 S09-1499-Rev. B, 10-Aug-09

    www.vishay.com 1

    Dual N-Channel 20-V (D-S) MOSFET

    FEATURES • Halogen-free According to IEC 61249-2-21

    Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

    APPLICATIONS • DC/DC • Notebook System Power • POL

    PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.)

    20

    0.0164 at VGS = 4.5 V 25f

    12 nC0.020 at VGS = 2.5 V 25f

    0.024 at VGS = 1.8 V 24.6

    1

    2

    3

    4

    5

    6

    7

    8

    S1

    G1

    S2

    G2

    D1

    D1

    D2

    D2

    3.30 mm 3.30 mm

    PowerPAK® 1212-8

    Bottom View

    Ordering Information: Si7232DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET

    G 1

    D 1

    S 1

    N-Channel MOSFET

    G 2

    D 2

    S 2

    Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

    copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.

    d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 94 °C/W. f. Package Limited.

    ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 8

    Continuous Drain Current (TJ = 150 °C)

    TC = 25 °C

    ID

    25f

    A

    TC = 70 °C 23.8 TA = 25 °C 10a, b

    TA = 70 °C 8a, b

    Pulsed Drain Current IDM 40

    Continuous Source-Drain Diode Current TC = 25 °C IS

    19 TA = 25 °C 2.2a, b

    Single Pulse Avalanche Current L = 0.1 mH

    IAS 15 Single Pulse Avalanche Energy EAS 11 mJ

    Maximum Power Dissipation

    TC = 25 °C

    PD

    23

    W TC = 70 °C 14.8 TA = 25 °C 2.6a, b

    TA = 70 °C 1.7a, b

    Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)c, d 260

    THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit

    Maximum Junction-to-Ambienta, e t ≤ 10 s RthJA 38 48 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 4.3 5.4

  • www.vishay.com 2

    Document Number: 68986 S09-1499-Rev. B, 10-Aug-09

    Vishay Siliconix Si7232DN

    New Product

    Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing.

    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

    SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit

    Static

    Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V

    VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 22

    mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 3

    Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.4 1 V

    Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA

    Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1

    µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 10

    On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 20 A

    Drain-Source On-State Resistancea RDS(on)

    VGS = 4.5 V, ID = 10 A 0.0135 0.0164

    ΩVGS = 2.5 V, ID = 9 A 0.016 0.020

    VGS = 1.8 V, ID = 8.2 A 0.019 0.024

    Forward Transconductancea gfs VDS = 10 V, ID = 10 A 47 S

    Dynamicb

    Input Capacitance Ciss

    VDS = 10 V, VGS = 0 V, f = 1 MHz

    1220

    pFOutput Capacitance Coss 180

    Reverse Transfer Capacitance Crss 80

    Total Gate Charge Qg VDS = 15 V, VGS = 8 V, ID = 10 A 21 32

    nC VDS = 15 V, VGS = 4.5 V, ID = 10 A

    12 18

    Gate-Source Charge Qgs 2

    Gate-Drain Charge Qgd 1.3

    Gate Resistance Rg f = 1 MHz 1.8 3.6 Ω

    Turn-On Delay Time td(on)

    VDD = 10 V, RL = 1.25 Ω ID ≅ 8 A, VGEN = 4.5 V, Rg = 1 Ω

    10 15

    ns

    Rise Time tr 10 15

    Turn-Off Delay Time td(off) 35 55

    Fall Time tf 10 15

    Turn-On Delay Time td(on)

    VDD = 10 V, RL = 1.25 Ω ID ≅ 8 A, VGEN = 8 V, Rg = 1 Ω

    10 15

    Rise Time tr 10 15

    Turn-Off Delay Time td(off) 25 40

    Fall Time tf 10 15

    Drain-Source Body Diode Characteristics

    Continuous Source-Drain Diode Current

    IS TC = 25 °C 19 A

    Pulse Diode Forward Current ISM 40

    Body Diode Voltage VSD IS = 8 A, VGS = 0 V 0.81 1.2 V

    Body Diode Reverse Recovery Time trr

    IF = 8 A, dI/dt = 100 A/µs, TJ = 25 °C

    20 30 ns

    Body Diode Reverse Recovery Charge Qrr 15 25 nC

    Reverse Recovery Fall Time ta 12.5 ns

    Reverse Recovery Rise Time tb 7.5

  • Document Number: 68986 S09-1499-Rev. B, 10-Aug-09

    www.vishay.com 3

    Vishay Siliconix Si7232DN

    New Product

    TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

    Output Characteristics

    On-Resistance vs. Drain Current and Gate Voltage

    Gate Charge

    0

    10

    20

    30

    40

    0.0 0.5 1.0 1.5 2.0 2.5 3.0

    VGS = 5 V thru 2 V

    VGS = 1.5 V

    VGS = 1 V

    VDS - Drain-to-Source Voltage (V)

    - D

    ra in

    C ur

    re nt

    (A )

    I D

    0.010

    0.015

    0.020

    0.025

    0.030

    0.035

    0.040

    0 10 20 30 40

    VGS = 10 V

    VGS = 1.8 V

    VGS = 2.5 V

    - O

    n- R

    es is

    ta nc

    e (Ω

    ) R

    D S

    (o n)

    ID - Drain Current (A)

    0

    2

    4

    6

    8

    0 3 6 9 12 15 18 21

    ID = 10 A

    VDS = 16 V

    VDS = 10 V

    - G

    at e-

    to -S

    ou rc

    e V

    ol ta

    ge (V

    )

    Qg - Total Gate Charge (nC)

    V G

    S

    Transfer Characteristics

    Capacitance

    On-Resistance vs. Junction Temperature

    0

    4

    8

    12

    16

    20

    0.0 0.3 0.6 0.9 1.2 1.5

    TC = 125 °C

    TC = 25 °C

    TC = - 55 °C

    VGS - Gate-to-Source Voltage (V)

    - D

    ra in

    C ur

    re nt

    (A )

    I D

    Crss 0

    200

    400

    600

    800

    1000

    1200

    1400

    1600

    0 4 8 12 16 20

    Ciss

    Coss

    VDS - Drain-to-Source Voltage (V)

    C -

    C ap

    ac ita

    nc e

    (p F

    )

    0.6

    0.8

    1.0

    1.2

    1.4

    1.6

    - 50 - 25 0 25 50 75 100 125 150

    ID = 10 A

    VGS = 1.8 V, 2.5 V, 4.5 V

    TJ - Junction Temperature (°C)

    (N or

    m al

    iz ed

    )

    - O

    n- R

    es is

    ta nc

    e R

    D S

    (o n)

  • www.vishay.com 4

    Document Number: 68986 S09-1499-Rev. B, 10-Aug-09

    Vishay Siliconix Si7232DN

    New Product

    TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

    Source-Drain Diode Forward Voltage

    Threshold Voltage

    0.0 0.2 0.4 0.6 0.8 1.0 1.2

    10

    1

    100

    TJ = 25 °C

    TJ = 150 °C

    VSD - Source-to-Drain Voltage (V)

    - S

    ou rc

    e C

    ur re

    nt (A

    ) I S

    0.2

    0.3

    0.4

    0.5

    0.6

    0.7

    0.8

    0.9

    - 50 - 25 0 25 50 75 100 125 150

    ID = 250 µA

    (V )

    V G

    S (t

    h)

    TJ - Temperature (°C)

    On-Resistance vs. Gate-to-Source Voltage

    Single Pulse Power, Junction-to-Ambient

    0

    0.01

    0.02

    0.03

    0.04

    0.05

    0 1 2 3 4 5

    TJ = 125 °C

    TJ = 25 °C

    ID = 10 A

    - O

    n- R

    es is

    ta nc

    e (Ω

    ) R

    D S

    (o n)

    VGS - Gate-to-Source Voltage (V)

    0

    30

    50

    10

    20P ow

    er (

    W )

    Time (s)

    40

    100 6000.10.001 1 100.01

    Safe Operating Area, Junction-to-Ambient

    0.01

    100

    1

    100

    0.01

    0.1

    1 ms

    10 ms

    100 ms

    0.1 1 10

    10

    TA = 25 °C Single Pulse

    Limited by RDS(on)*

    10 s, 1 s

    100 µs

    BVDSS Limited

    DC

    IDM Limited

    ID(on) Limited

    VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified

    - D

    ra in

    C ur

    re nt

    (A )

    I D

  • Document Number: 68986 S09-1499-Rev. B, 10-Aug-09

    www.vishay.com 5

    Vishay Siliconix Si7232DN

    New Product

    TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

    * The power dissipation PD is based on TJ