uClamp3306P Low Voltage TVS for ESD Protection · Circuit Diagram Package ... % of Rated Power or I...

9
1 www.semtech.com PROTECTION PRODUCTS - MicroClamp TM uClamp3306P Low Voltage TVS for ESD Protection Description Features Circuit Diagram Package Revision 01/17/2007 The μClamp TM series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient events. Each device will protect up to six lines operating at 3.3 volts. The μClamp TM 3306P is a solid-state device designed specifically for transient suppression. It is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capaci- tance over traditional pn junction processes. They offer desirable characteristics for board level protection including fast response time, low clamping voltage and no device degradation. The μClamp3306P may be used to meet the immunity requirements of IEC 61000-4-2, level 4 (±15kV air, ±8kV contact discharge). It is packaged in an ultra small SLP1616P6 package with a low profile of only 0.58mm. The leads are spaced at a pitch of 0.5mm and are finished with lead-free NiPd. The small package makes it ideal for use in portable electronics such as cell phones, digital still cameras, and notebook computers. Applications Mechanical Characteristics Cellular handsets and accessories Notebooks and handhelds MP3 Players Digital cameras Portable instrumentation Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) Small package for use in portable electronics Protects Six I/O Working voltage: 3.3V Low leakage current Low operating and clamping voltages Solid-state silicon-avalanche technology SLP1616P6 package RoHS/WEEE Compliant Nominal Dimensions: 1.6 x 1.6 x 0.58 mm Lead Pitch: 0.5mm Lead Finish: NiPd Marking : Orientation Mark and Marking Code Packaging : Tape and Reel per EIA 481 6 Pin SLP package (Bottom Side View) 1.6 x 1.6 x 0.58mm (Nominal) Device Schematic Center Tab (GND) 2 3 4 5 6 1 0.6 1.6 1.6 1 0.5 6

Transcript of uClamp3306P Low Voltage TVS for ESD Protection · Circuit Diagram Package ... % of Rated Power or I...

Page 1: uClamp3306P Low Voltage TVS for ESD Protection · Circuit Diagram Package ... % of Rated Power or I PP Power Derating Curve Clamping Voltage vs. Peak Pulse Current Normalized Capacitance

PROTECTION PRODUCTS

1 www.semtech.com

PROTECTION PRODUCTS - MicroClampTM

uClamp3306PLow Voltage TVS

for ESD Protection

Description Features

Circuit Diagram Package

Revision 01/17/2007

The μClampTM series of TVS arrays are designed toprotect sensitive electronics from damage or latch-updue to ESD, lightning, and other voltage-inducedtransient events. Each device will protect up to six linesoperating at 3.3 volts.

The μClampTM3306P is a solid-state device designedspecifically for transient suppression. It is constructedusing Semtech’s proprietary EPD process technology.The EPD process provides low standoff voltages withsignificant reductions in leakage currents and capaci-tance over traditional pn junction processes. They offerdesirable characteristics for board level protectionincluding fast response time, low clamping voltage andno device degradation.

The μClamp3306P may be used to meet the immunityrequirements of IEC 61000-4-2, level 4 (±15kV air,±8kV contact discharge). It is packaged in an ultrasmall SLP1616P6 package with a low profile of only0.58mm. The leads are spaced at a pitch of 0.5mmand are finished with lead-free NiPd. The small packagemakes it ideal for use in portable electronics such as cellphones, digital still cameras, and notebook computers.

Applications

Mechanical Characteristics

Cellular handsets and accessoriesNotebooks and handheldsMP3 PlayersDigital camerasPortable instrumentation

Transient protection for data lines toIEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)Small package for use in portable electronicsProtects Six I/OWorking voltage: 3.3VLow leakage currentLow operating and clamping voltagesSolid-state silicon-avalanche technology

SLP1616P6 packageRoHS/WEEE CompliantNominal Dimensions: 1.6 x 1.6 x 0.58 mmLead Pitch: 0.5mmLead Finish: NiPdMarking : Orientation Mark and Marking CodePackaging : Tape and Reel per EIA 481

6 Pin SLP package (Bottom Side View)1.6 x 1.6 x 0.58mm (Nominal)

Device Schematic

Center Tab (GND)

2 3 4 5 61

0.6

1.6

1.6

1

0.5

6

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2© 2007 Semtech Corp. www.semtech.com

PROTECTION PRODUCTS

uClamp3306P

Absolute Maximum Rating

Electrical Characteristics (T=25oC)

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3© 2007 Semtech Corp. www.semtech.com

PROTECTION PRODUCTS

uClamp3306P

Typical Characteristics

Non-Repetitive Peak Pulse Power vs. Pulse Time

0

10

20

30

40

50

60

70

80

90

100

110

0 25 50 75 100 125 150

Ambient Temperature - TA (oC)

% o

f Rat

ed P

ower

or I

PP

Power Derating Curve

Clamping Voltage vs. Peak Pulse Current

Normalized Capacitance vs. Reverse VoltageESD Clamping

(8kV Contact per IEC 61000-4-2)

0.01

0.1

1

0.1 1 10 100 1000

Pulse Duration - tp (µs)

Peak

Pul

se P

ower

- P

PP (k

W)

Forward Voltage vs. Forward Current

0

1

2

3

4

5

6

7

8

0 1 2 3 4 5 6Forward Current - IF (A)

Forw

ard

Volta

ge -

V F (V

)

Waveform Parameters:

tr = 8μstd = 20μs

0

0.2

0.4

0.6

0.8

1

1.2

0 0.5 1 1.5 2 2.5 3 3.5Reverse Voltage - VR (V)

CJ(

V R) /

CJ(

V R=0

)

f = 1 MHz

Line-Ground

Line-Line

0

2

4

6

8

10

0 1 2 3 4 5 6Peak Pulse Current - IPP (A)

Cla

mpi

ng V

olta

ge -

V C (V

)

Waveform Parameters:

tr = 8μstd = 20μs

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4© 2007 Semtech Corp. www.semtech.com

PROTECTION PRODUCTS

uClamp3306P

Insertion Loss S21 - LtoL (I/O to I/O) Insertion Loss S21 -LtoG (I/O to Pin 2)

2 3

4

1

START . 030 MHz 3 STOP 000 . 000 000 MHz

CH1 S21 LOG 6 dB / REF 0 dB

1: -3.0155 dB 260 MHz 2: -7.4637 dB

900 MHz 3: -9.2053dB

1.8 GHz 4: -9.9280 dB

2.5 GHz

0 dB

-6 dB

-12 dB

-18 dB

-24 dB

-30 dB

-36 dB 1

GHz 100 MHz

3 GHz

10 MHz

1 MHz

2 3

4

1

START . 030 MHz 3 STOP 000 . 000 000 MHz

CH1 S21 LOG 6 dB / REF 0 dB

1: -3.0041 dB 532 MHz 2: -4.0655 dB

900 MHz 3: -6.1405dB

1.8 GHz 4: -8.0944 dB

2.5 GHz

0 dB

-6 dB

-12 dB

-18 dB

-24 dB

-30 dB

-36 dB 1 GHz

100 MHz

3 GHz

10 MHz

1 MHz

Crosstalk S21 (I/O to Pin 4)

START . 030 MHz 3 STOP 000 . 000 000 MHz

CH1 S21 LOG 20 dB / REF 0 dB

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5© 2007 Semtech Corp. www.semtech.com

PROTECTION PRODUCTS

uClamp3306P

Device Connection Options

The μClamp3306P is designed to protect 6 signal lineswith an operating voltage of 0 to 3.3V. It will present ahigh impedance to the protected line up to 3.3 volts. Itwill “turn on” when the line voltage exceeds 3.5 volts.The device is unidirectional and may be used on lineswhere the signal polarity is above ground.

Pins 1, 2, 3, 4, 5, and 6 are connected to I/O signals.The center tab is connected to system ground. Allsignal lines and ground should be made with the lowestimpedance and inductance path as possible. This willimprove signal quality of the lines and keep theclamping voltage as low as possible during a fasttransient.

EPD TVS Characteristics

These devices are constructed using Semtech’sproprietary EPD technology. The structure of the EPDTVS is vastly different from the traditional pn-junctiondevices. At voltages below 5V, high leakage currentand junction capacitance render conventional ava-lanche technology impractical for most applications.However, by utilizing the EPD technology, these devicescan effectively operate at 3.3V while maintainingexcellent electrical characteristics.

The EPD TVS employs a complex nppn structure incontrast to the pn structure normally found in tradi-tional silicon-avalanche TVS diodes. The EPD mecha-nism is achieved by engineering the center region ofthe device such that the reverse biased junction doesnot avalanche, but will “punch-through” to a conduct-ing state. This structure results in a device with supe-rior DC electrical parameters at low voltages whilemaintaining the capability to absorb high transientcurrents.

Applications InformationFigure 1 - Circuit Diagram

IPP

ISB

IPTIR

VRWM VV PT VC

VF

IF

SB

Figure 3 - EPD TVS IV Characteristic Curve

Figure 2 - Layout Example

Center Tab (GND)

2 3 4 5 61

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6© 2007 Semtech Corp. www.semtech.com

PROTECTION PRODUCTS

uClamp3306P

Figure 3 - μClamp3306P Spice Model

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JV tloV 75.0

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M -- 632.0

N -- 1.1

GE Ve 11.1

I/O

Applications Information - Spice Model

Page 7: uClamp3306P Low Voltage TVS for ESD Protection · Circuit Diagram Package ... % of Rated Power or I PP Power Derating Curve Clamping Voltage vs. Peak Pulse Current Normalized Capacitance

7© 2007 Semtech Corp. www.semtech.com

PROTECTION PRODUCTS

uClamp3306P

Outline Drawing - SLP1616P6

Land Pattern - SLP1616P6

bxN

E/2LxN

E1

D1A2

A

E

D

1.701.50.067.059

1.50 1.70.067.059

INCHES

.020 BSC

b .008

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D1

Le

D

.010

.041

DIM

A1A2

AMIN

0.00.020

0.300.20.012 0.25.010

0.40

1.30

0.25

1.05

.004

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.013

.063

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.016

.051

0.080.10

60.33

1.601.20

0.50 BSC

MILLIMETERSMAX

0.050.65

DIMENSIONS

MIN

0.00

NOM

(.005)

.023

.001

MAX

.002

.026NOM

0.500.03

(0.13)

0.58

CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).

COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.

NOTES:

2.

1.

E1 .010 .016 .020 0.25 0.40 0.501.60.063E

AB

A1

SEATING PLANE

C

aaa C

1 2

N

e

PIN 1INDICATOR

(LASER MARK)

bbb C A B

D/2

CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).1.

FUNCTIONAL PERFORMANCE OF THE DEVICE.FAILURE TO DO SO MAY COMPROMISE THE THERMAL AND/OR SHALL BE CONNECTED TO A SYSTEM GROUND PLANE.THERMAL VIAS IN THE LAND PATTERN OF THE EXPOSED PAD3.

THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR

NOTES:

2.

DIM

XY

P

GC

MILLIMETERSINCHES1.52

.012

.025

.035

.020

.060

0.300.63

0.50

0.89

DIMENSIONS

COMPANY'S MANUFACTURING GUIDELINES ARE MET.

2.15.085Z

.018H 0.45

X

Z

P

Y

G(C)H

K

K .051 1.30

Page 8: uClamp3306P Low Voltage TVS for ESD Protection · Circuit Diagram Package ... % of Rated Power or I PP Power Derating Curve Clamping Voltage vs. Peak Pulse Current Normalized Capacitance

8© 2007 Semtech Corp. www.semtech.com

PROTECTION PRODUCTS

uClamp3306P

Marking Ordering Information

MicroClamp, uClamp and μClamp are marks of SemtechCorporation

Tape and Reel Specification

Device Orientation in Tape

epaThtdiW

)xaM(,B D 1D E FK

)XAM(P 0P 2P )XAM(T W

mm8mm2.4)561.(

mm1.0+5.1mm0.0-

500.+95.0()000.-

mm8.050.0±)130.(

01.±057.1mm

)400.±960.(

50.0±5.3mm

)200.±831.(

mm4.2)490.(

1.0±0.4mm

-00.±751.()4

1.0±0.4mm

-00.±751.()4

-m50.0±0.2m

)200.±970.(

mm4.0)610.(

mm0.8mm3.0+mm1.0-

)210.±213.(

Contact Information

Semtech CorporationProtection Products Division

200 Flynn Rd., Camarillo, CA 93012Phone: (805)498-2111 FAX (805)498-3804

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Page 9: uClamp3306P Low Voltage TVS for ESD Protection · Circuit Diagram Package ... % of Rated Power or I PP Power Derating Curve Clamping Voltage vs. Peak Pulse Current Normalized Capacitance

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