EE415/515 Fundamentals of Semiconductor Devices Fall 2012 ...
TVS3V3L4U - Semiconductor & System Solutions
Transcript of TVS3V3L4U - Semiconductor & System Solutions
TVS3V3L4UProtection device
TVS (transient voltage suppressor)Bi/uni-directional, 3.3 V, 2 pF, RoHS and halogen free compliant
Feature list• ESD/Transient/Surge protection according to:
- IEC61000-4-2 (ESD): ±30 kV (air/contact discharge)- IEC61000-4-4 (EFT): ±4 kV/±80 A (5/50 ns)- IEC61000-4-5 (Surge): ±20 A (8/20 μs)
• Reverse working voltage up to: VRWM = 3.3 V• Low leakage current: IR <50 nA• Low capacitance: CL = 2 pF (typical, I/O to GND), 1 pF (typical, I/O to I/O)• Low clamping voltage: VCL = 7.7 V (typical) at Ipp = 20 A (8/20 µs)• Pb-free (RoHS compliant) and halogen free package
Potential applications• 10/100/1000 Ethernet• 4 lines uni-directional (pin 1, 3, 4, 6 to GND)• 2 lines bi-directional (pin 2 n.c.)
Product validationQualified for industrial applications according to the relevant tests of JEDEC47/20/22
Device information
TVS3V3L4U_PinConf_and_SchematicDiag1.vsd
Pin 2 Pin 3
Pin 6 Pin 5 Pin 4
Pin 1a) Pin configuration b) Schematic diagram
Pin 1 Pin 3 Pin 4
Pin 2GND
Pin 6Pin 5n.c.
Figure 1 Pin configuration and schematic diagram
Table 1 Part information
Type Package Configuration Marking codeTVS3V3L4U SC74-6-2 4-lines uni-directional or
2-lines bi-directionalE1s
Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.5www.infineon.com 2018-02-16
Table of contents
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Typical characteristic diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124.1 SC74-6-2 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
TVS3V3L4UProtection device
Table of contents
Datasheet 2 Revision 2.52018-02-16
1 Maximum ratingsNote: TA = 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter Symbol Values Unit Note or test conditionMin. Max.
ESD discharge 1) VESD -30 30 kV air
-30 30 contact
Peak pulse current Ipp -20 20 A tp = 8/20 μs2)
Peak pulse power PPK – 154 W tp = 8/20 μs 2)
– 1044 tp = 100 ns3)
Operating temperature TOP -55 125 °C –
Storage temperature Tstg -55 150 –
Attention: Stresses above the maximum values listed here may cause permanent damage to the device.Exposure to absolute maximum rating conditions for extended periods may affect devicereliability. Maximum ratings are absolute ratings. Exceeding only one of these values may causeirreversible damage to the component.
1 VESD according to IEC61000-4-22 Ipp according to IEC61000-4-5. PPKis calculated by Ipp x VCL3 Please refer to AN210 [1]. PPK is calculated by ITLP x VCL
TVS3V3L4UProtection device
Maximum ratings
Datasheet 3 Revision 2.52018-02-16
2 Electrical characteristicsNote: TA = 25 °C, unless otherwise specified.
VF
RDYNΔVΔI
ITLP
VR
IF
IR
IPP
VFCVTLP
ITLP
IPP
IRWM
VRWMVt1 VhVRCVTLP
ΔV
ΔI
RDYNΔVΔI
VF ... Forward voltage
VR ... Reverse voltage
IR ... Reverse current
IF ... Forward current
Diode_Characteristic_Curve_with_snapback_Uni-directional.svg
ΔI
ΔV
RDYN ... Dynamic resistance
VFC ... Forward clamping voltageVh ... Holding voltageVt1 ... Trigger voltageVRWM ... Reverse working voltage max.
VTLP ... TLP voltage
IPP ... Peak pulse currentITLP ... TLP current
IRWM ... Reverse working current max.
VRC ... Reverse clamping voltage
Figure 2 Definitions of electrical characteristics
TVS3V3L4UProtection device
Electrical characteristics
Datasheet 4 Revision 2.52018-02-16
Table 3 DC characteristics
Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.
Reverse working voltage VRWM – – 3.3 V –
Reverse current IR – – 50 nA VR = 3.3 V
Table 4 RF characteristics
Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.
Line capacitance CL – 2 3 pF I/O to GND, VR = 0 V,f = 1 MHz
– 1 – I/O to I/O, VR = 0 V,f = 1 MHz
Table 5 ESD characteristics
Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.
Reverse clamping voltage 1) VCL – 4.2 – V I/O to GND, tp = 8/20 µs,IPP = 1 A
– 4.9 – I/O to GND, tp = 8/20 µs,IPP = 5 A
– 5.8 – I/O to GND, tp = 8/20 µs,IPP = 10 A
– 6.7 – I/O to GND, tp = 8/20 µs,IPP = 15 A
– 7.7 – I/O to GND, tp = 8/20 µs,IPP = 20 A
Reverse clamping voltage2) – 5.8 – I/O to GND, tp = 100 ns,IPP = 16 A
Forward clamping voltage 1) VFC – 1.1 – GND to I/O, tp = 8/20 µs,IPP = 1 A
– 4 – GND to I/O, tp = 8/20 µs,IPP = 20 A
Forward clamping voltage 2) – 3.1 – GND to I/O, tp = 100 ns,IPP = 16 A
Dynamic resistance 1) RDYN – 0.15 – Ω I/O to GND, tp = 8/20 µs
Dynamic resistance 2) – 0.09 – I/O to GND, tp = 100 ns
1 IPP according to IEC61000-4-52 Please refer to application note AN210 [1], TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging
window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLPcharacteristics between IPP1 = 10 A and IPP2 = 40 A
TVS3V3L4UProtection device
Electrical characteristics
Datasheet 5 Revision 2.52018-02-16
3 Typical characteristic diagramsNote: TA = 25 °C, unless otherwise specified.
1
1.5
2
2.5
3
0 0.5 1 1.5 2 2.5 3 3.5
CL [
pF
]
VR [V]
Figure 3 Line capacitance: CL = f(VR)
10-9
10-8
10-7
10-6
10-5
10-4
10-3
10-2
10-1
0.2 0.4 0.6 0.8 1
I F [
A]
VF [V]
Figure 4 Forward characteristic: IF = f(VF)
TVS3V3L4UProtection device
Typical characteristic diagrams
Datasheet 6 Revision 2.52018-02-16
10-12
10-11
10-10
10-9
10-8
10-7
0 0.5 1 1.5 2 2.5 3 3.5
I R [
A]
VR [V]
Figure 5 Reverse current: IR= f(VR)
10-9
10-8
10-7
-75 -50 -25 0 25 50 75 100 125
I R [
A]
TA [°C]
Figure 6 Reverse current: IR= f(TA), VR = 3.3 V
TVS3V3L4UProtection device
Typical characteristic diagrams
Datasheet 7 Revision 2.52018-02-16
4
6
8
10
12
14
16
18
20
22
4 5 6 7 8
I PP [
A]
VCL [V]
Figure 7 Pulse reverse current versus clamping voltage: IPP= f(VCL), according to IEC61000-4-5
4
6
8
10
12
14
16
18
20
22
1 2 3 4 5
I PP [
A]
VCL [V]
Figure 8 Pulse forward current versus clamping voltage: IPP= f(VCL), according to IEC61000-4-5
TVS3V3L4UProtection device
Typical characteristic diagrams
Datasheet 8 Revision 2.52018-02-16
0
10
20
30
40
50
60
70
80
90
4 5 6 7 8 9 10 11 12 0
10
20
30
40
I TL
P [
A]
Equ
iva
lent
VIE
C
[kV
]
VTLP [V]
TVS3V3L4URDYN
RDYN=0.085Ω
Figure 9 Clamping voltage (TLP): ITLP = f(VTLP), reverse pulse [1]
0
10
20
30
40
50
60
70
80
90
0 2 4 6 8 10 12 0
10
20
30
40
I TL
P [
A]
Eq
uiv
ale
nt
VIE
C
[kV
]
VTLP [V]
TVS3V3L4URDYN
RDYN=0.117Ω
Figure 10 Clamping voltage (TLP): ITLP = f(VTLP), forward pulse [1]
TVS3V3L4UProtection device
Typical characteristic diagrams
Datasheet 9 Revision 2.52018-02-16
-50
0
50
100
0 50 100 150 200 250
VC
L [
V]
tp [ns]
-25
0
25
50
-5 0 5 10 15 20 25 30V
CL [
V]
tp [ns]
Figure 11 Clamping voltage (ESD): VCL = f(t), 8 kV positive pulse according to IEC61000-4-2
-50
0
50
100
0 50 100 150 200 250
VC
L [
V]
tp [ns]
-25
0
25
50
-5 0 5 10 15 20 25 30
VC
L [
V]
tp [ns]
Figure 12 Clamping voltage (ESD): VCL = f(t), -8 kV negative pulse according to IEC61000-4-2
TVS3V3L4UProtection device
Typical characteristic diagrams
Datasheet 10 Revision 2.52018-02-16
-50
0
50
100
0 50 100 150 200 250
VC
L [
V]
tp [ns]
-25
0
25
50
-5 0 5 10 15 20 25 30V
CL [
V]
tp [ns]
Figure 13 Clamping voltage (ESD): VCL = f(t), +15 kV positive pulse according to IEC61000-4-2
-50
0
50
100
0 50 100 150 200 250
VC
L [
V]
tp [ns]
-25
0
25
50
-5 0 5 10 15 20 25 30
VC
L [
V]
tp [ns]
Figure 14 Clamping voltage (ESD): VCL = f(t), -15 kV negative pulse according to IEC61000-4-2
TVS3V3L4UProtection device
Typical characteristic diagrams
Datasheet 11 Revision 2.52018-02-16
4 Package informationNote: Dimensions in mm.
4.1 SC74-6-2 package
SC74-PO V04
5 46
321
1.1 MAX.
(0.35)(2.25)
±0.22.9 B
0.2+0.1-0.050.35
Pin 1marking
M B 6x0.95
1.9
0.15 -0.06+0.1
1.6
A
±0.1
2.5
0.25
±0.1
±0.1
A0.2 M
0.1 MAX.
Figure 15 SC74-6-2 package outline
Figure 16 SC74-6-2 footprint
SC74-TP
2.7
4
3.15Pin 1marking
8
0.2
1.15
Figure 17 SC74-6-2 packing
Figure 18 SC74-6-2 marking example (marking code see Device information)
TVS3V3L4UProtection device
Package information
Datasheet 12 Revision 2.52018-02-16
5 References[1] Infineon AG - Application Note AN210: Effective ESD protection design at system level using VF-TLP
characterization methodology
Revision historyRevision history: Rev. 2.4. 2013-02-06Page or Item Subjects (major changes since previous revision)Revision 2.5, 2018-02-16
All Data sheet layout changed, editorial changes, references updated
TVS3V3L4UProtection device
References
Datasheet 13 Revision 2.52018-02-16
TrademarksAll referenced product or service names and trademarks are the property of their respective owners.
Edition 2018-02-16Published byInfineon Technologies AG81726 Munich, Germany © 2018 Infineon Technologies AGAll Rights Reserved. Do you have a question about anyaspect of this document?Email: [email protected] Document referenceIFX-rza1515758558601
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