the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS...

45
Neuroengineering the Next Decade N E Dejan Marković UCLA ECE Department [email protected]

Transcript of the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS...

Page 1: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

Neuroengineeringthe Next Decade

N

E

Dejan MarkovićUCLA ECE Department

[email protected]

Page 2: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 2

Radio

2

Low-Power Expertise, New Challenges

SDR DFE Rx/TxMIMO BB

Neural-spike DSP

500 μm

10 μm

MTJ

Bottom Electrode

Top Electrode

Technology

Set/Reset Voltage

Device Size

RP and TMR

Die Area

Supply Voltage

65-nm CMOS

0.5V / 1.1V

5.8kΩ / 5%

190 x 60 nm2

23.43 x 13.05 mm2

1.5V

Flexible logic Post-CMOS

Cognitive DSP BB

Energy harvesting Neuroscience and therapy

New dsp

biomed

1.9

44

mm

1.424 mm

AD

C C

h0

(Diff. V

CO

)

AD

C C

h0

Co

un

tGe

n

AD

C C

h1

(Diff. V

CO

)

AD

C C

h1

Co

un

tGe

n

AD

C C

h2

(Diff. V

CO

)

AD

C C

h2

Co

un

tGe

n

AD

C C

h3

(Diff. V

CO

)

AD

C C

h3

Co

un

tGe

n

Te

st A

DC

(Diff. V

CO

)

Te

st A

DC

Co

un

tGe

n

AD

C C

h4

(Diff. V

CO

)

AD

C C

h4

Co

un

tGe

n

AD

C C

h5

(Diff. V

CO

)

AD

C C

h5

Co

un

tGe

n

AD

C C

h6

(Diff. V

CO

)

AD

C C

h6

Co

un

tGe

n

AD

C C

h7

(Diff. V

CO

)

AD

C C

h7

Co

un

tGe

n

Te

st

Str

uctu

res

Te

st

Str

uctu

res

PM

UP

acke

tiza

tio

n

En

gin

e

SP

I

Ma

ste

r

Co

nfig

. R

eg

An

d C

on

tro

ller

Te

st

Cfg

Re

g

IO

PE

1

PE

2

PE

3

PE

4

PE

5

PE

6

PE

7

PE

8

PE

9

PE

10

PE

11

PE

12

PE

13

PE

14

PE

15

PE

16

2.98 mm

2.9

8 m

m

register bank / scheduler

3.16

mm

2.17 mm

Reg. File Bank

128-2048 ptFFT

Hard-outputSphere

Decoder Soft

-ou

tpu

t B

ank

Pre

-pro

c.

Rx DFE0.4 mm2

1.34 mm

1.20

mm

M1

M2

M3

STA+DTA

Power Est.

TestCircuitry

STA+DTA

MW

FFT

Memory Logic

MW+FFT

Level Shifters

18

20

um

1520 um

1.2

6m

m

1.15mm

0.2

mm

Featu

re Ex.

0.6

5m

m

Mem

ory

(PSD

Sensin

g)

P/S + S/P

Mem

ory

(64

-81

92

-pt FFT)

Mixer+C

IC

64

-81

92

-pt

FFT+P

SD Sen

sing

Level Shifter

Ban

d Se

g.

DSP

Logic

DSP

BR

AM

BR

AM

Logic

DSP

Slice L/M

Slice L/M

Slice L/M

Slice L

DSP-48, Slice L, BRAM

Slice L/M

Slice L/M

Slice L/M

64-8kFFT 16-core UDSP

R-C Bank

MPPT

AD

MN

ILR

O

CTSCP

ModeSensing

Native

NM

OS

Page 3: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 3

Socio-economic impact in US

• Chronic pain (100M people) → $635B / year

• Alzheimer’s (5.3M people) → $220B / year

• Depression (18M)

• Anxiety (3.3M)

• Epilepsy (2.3M)

• Parkinson’s (1M)

3

Brain Disease is a Growing Problem

A subset of patients (1-10%) would qualify for DBS

Effective therapy

>100x treatment gap

Epilepsy

monitoring:

a gateway

to these

indications

Limited therapy

10x treatment gap

>1,000x treatment gap

Extremely limited or no therapy

Can’t treat complex network diseases with old tools

Page 4: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 4

Low-Precision Tools = Large Treatment Gap

DBS leads today allowcontinent-level access

4

Page 5: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 5

• Long procedure, manual control

• Chest-based device, very bulky (34cc)

• Low resolution interface technology

5

Existing DBS Device for Parkinson’s Disease

Medtronic Activa SC

500th DBS patient @ UCLA

May 23, 2013

Courtesy: Dr. Nader Pouratian (UCLA)

6.1 x 5.6 x 1cm

34cc

4 ring

contacts

Page 6: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 6

• 8 channels, record (up to 30 min)

• Rec + stim (not simultaneously)

• Replace battery (2-5 years)

Therapeutic Device for Epilepsy

NeuroPace RNS-300

FDA

2014

6

Page 7: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 77

Parkinson's

10 M

Epilepsy

70 M

Deafness

360 M

Depression

350 M

Blindness

285 M

Paralysis

17 M

Alzheimer’s

114 M

Temporallobe

Auditorynerve

ACC

Visualcortex

HC

STN

The Burden of Neurological Disease

NA

OCD

138 M

# of patients worldwide

• Pharmacological therapies are limited

• Surgical therapies are even more limited

• Existing surgical therapies <10% market penetration

Page 8: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 88

Problems: Why Did Other Indications Fail?

• Same probe design in nearly all DBS applications, despite morphological and anatomical differences in target nuclei

• Mostly open-loop stimulation (on 1 or 2 contacts)▪ Continuous 130-Hz stimulation (amplitude, pulse changes)

• Limited sensing (no sensing, or blank during stimulation)▪ Limited understanding of stimulation tissue response

• Limited wireless data (kbps) and power▪ Limited understanding of deep-brain activity

• Bulky devices, long surgeries

Page 9: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 9

UCLA Medicine and Engineering

Medicine

Engineering

9

Page 10: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 10

• Alzheimer’s disease (age 65+)▪ Cost of care in 2015: $221B [1]

▪ Apple 2015 revenue: $233B

• Younger population (0-14), US▪ Epilepsy: 5 children per day [2]

▪ TBI: 1 ER visit per minute [3]

A Challenge: Understand Memory

[1] www.alz.org [2] www.epilepsyfoundation.org [3] www.cdc.gov

Negative effects on declarative memory

10

Page 11: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 11

• Conscious recollection: uniquely human

▪ Episodic (events), semantic (facts)

Perception and Memory Model

SensoryRegister

Encoding

Perception

Short-TermMemory

WorkingMemory

5-9 items

Long-TermMemory

ActiveMemories

Large storage

Learn (save)

Retrieve

Temporary

Storage

Permanent

Storage

0.5s visual

2-4s auditory~30sec

11

Page 12: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 12

Neuro-

scienceMedicine

Engineering

12

Page 13: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 13

Studies of Human Memory Today

Epilepsy monitoring technology

• Wall-plugged instruments

• Deep intracranial probes

• Hospital environment

• Limited closed-loop Courtesy: R. Staba (UCLA)

Memory areas

13

Page 14: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 14

Our focus: hippocampus and entorhinal cortex

Human Memory Circuits

14

Page 15: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 15

Local field potential

• Local field potential (LFP)▪ Population activity

▪ Analyze frequency bands

15

What to Measure?

Actionpotential

Frequency (Hz)

Am

plit

ud

e (

V)

10k1k1001010.11µ

10µ

100µ

1m

10m

𝜃(3-8Hz)

High-𝛾(80-130Hz)

Also analyze various temporal correlations

• Action potential (AP)▪ Individual neurons

▪ Firing (time, rate)

▪ ~50x higher fsample

Page 16: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 16

Non-Topographic Organization of Memory Cells

• Adjacent cells encode different concepts

• Response to multiple instances of a concept

• Single units encode specific memories

16Courtesy: Dr. Itzhak Fried (UCLA)

Page 17: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 17

• Access to deep brain areas▪ Rare clinical situations

• Need both population and single-unit activity▪ Very power hungry

• Need more channels▪ And higher density…

▪ Study specific memories

Why is Engineering Human Memory Hard?

BF probe

(UCLA)

17

Page 18: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 18

1. Sensing

2. Stimulation

3. Power & Config

4. Data

6. Update

5. Status and Display

Device Channels Spacing AP + LFP Battery Volume

Activa PC+S 2 x 4 1.5 mm N Y (6.3 Ah) 39 cm3

RNS-300 2 x 4 3.5 mm N Y (0.7 Ah) 13 cm3

Proposed 2 x 32 0.3 mm Y N (RF) <1 cm3 18

Page 19: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 1919

• Cochlear: stable power only at a narrow distance (→ alignment magnet)

• Proposed: stable power delivery up to 3cm (→ no implant magnet)

Distance

sensitive

Distance

tolerant

> 30mW

Proposed

Cochlear

Benefit: no magnet

Cochlear implant

Revolutionizing Wireless Power

Page 20: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 2020

Page 21: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 21

• 40 contacts (10x more)

• Multi-scale, high-density

• Same diameter (1.27mm)

21

Our High-Precision Implantable Lead

Our 40-contact probe

Large

defocused

stimulation

contacts

Medium-sized focal

stimulation contacts

Small contacts for

cell-level recording

150µm

30µm

1mm

1mm 150µm 30µm

Page 22: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 22

• Stimulation: 0.2-0.6mA

▪ 2 distal macro channels

▪ 300µs per phase

▪ 50Hz pulses for 1s

• Micro-channel recording (7.3mm away from the stimulation site)

• Recording: 30kHz sampling

Dynamic Range in Closed-Loop Systems?

Patient 448, REC

Bipolar stimulation

Micro-chrecording

BF probe

This setup uses wall-plugged electronicsto achieve sufficient input dynamic range

22

Page 23: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 23

~5b of Headroom at Microwatt Power?

1s

Extra

DR

Sign

al a

mp

litu

de

(m

V)

Time (s)

cleaned

signal

signal +artifact

14mV

20mV

6mV

Patient 448

0

Headroom: 20mV / 0.5mV = 40 (32dB) → +5bits

5 10 15 20 25 30 35 40 45–25

–20

–15

–10

–5

0

5

10

15

20

25

spikes

0.5

−0.5m

V

23

Page 24: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 24

High DR

24

Key Requirements for Implantable Amplifiers

Single-unit front-end

• Pseudo-R nonlinearity distorts Vout

• R<5GΩ & large caps for low HPC

• Sensitive to process and temp

1 High Zin Low HP corner Low power2 3 4

[1] R. Harrison, et al., IEEE J. Solid-State Circuits, June 2003, pp 958–965.

[2] F. Zhang, et al., IEEE Trans. BioCAS, Jan. 2012, pp 344–355.

[3] T. Denison, et al., IEEE J. Solid-State Circuits, Dec. 2007, pp 2934–2945.

[4] Q. Fan, et al., IEEE J. Solid-State Circuits, July 2011, pp 1534–1543.

Vref

Vout

Cin

Vin gm

CL

CF

Chopper-based LFP front-end

• Electrode offset = large DC current due to reduced Zin

• SoA designs: Zin < 30MΩ(need >1GΩ to avoid Coff-chip) Vref

Vout

Cin

Vin gm

CL

CF

f0

f0

f0

Zin

Coff-chip ICVin

Page 25: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 25

Voltage-to-voltage/current gain: output saturates

25

Addressing the Dynamic Range Issue

+

Desired Signal

1mV

Interferes

100mV

Signal Recovery

Not Possible

Blind-Source

Separation

Signal Recovery

Possible

Conventional

Proposed

Signal recovery not

possible

Voltage-to-phase gain: output does not saturate

AFE

(conventional receive chains are inadequate)

Page 26: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 26

(suitable for kHz-rate biosignals)

26

Oscillator-based Analog Front End

EEG ECG EMG

< 1µW < 1µW ~ 5µW

Vinp Vinn

Vbp Vbn

Digital Logic

Dout

Configurable to multiple biosignals

Reference DR THD Vpk Zin Vn,rms VDD Power

Denison, JSSC’07 74dB −60dB 2.5mV 8MΩ 1µV 1.8V 2µW

Muller, ISSCC’14 52dB −48dB 0.5mV 28MΩ 1.3µV 0.5V 2.3µW

This Work 91dB −87dB 100mV >1GΩ 2µV 1.2V 3µW

Coff-chip

W. Jiang, V. Hokhikyan, H. Chandrakumar, V. Karkare, D. Marković, ISSCC 2016, pp. 484-485.

Page 27: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 27

Full-Duplex Recording and Stimulation

1 10 100

1

10

100

1k

10k

Po

we

r p

er

chan

ne

l (μ

W)

Commercial wall-powered

Peak Linear Input (mV)

ImplantThis work

1,000x

10x

27

Page 28: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 28

Embedded Computational Memory Model

Raw

data

Pre-processing

LFP

spike

Raw

features

Dim. red

Machine learning

Stim. control

Model

features

Shape, time,

freq, space

offline

Biophysical & machine-learning

Spike ActivityLFP Spectum

Correct (View) Spectrogram for RMH

Fre

quency (

Hz)

Time (s)

-4 -2 0 2 4

5

10

15

20

25

30

35

-4

-3

-2

-1

0

1

2

3

4

5Correct (View) Spectrogram for RMH

Fre

quency (

Hz)

Time (s)

-4 -2 0 2 4

5

10

15

20

25

30

35

-4

-3

-2

-1

0

1

2

3

4

5

LFP Phase

-200 -150 -100 -50 0 50 100 150 2000

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

Phase (degrees)

Norm

aliz

ed C

ount

Left HP -- Theta Phase 5 ms around Picture Presentation

Correct

Missed

Spike-Phase Coherence

1

2

3

30

210

60

240

90

270

120

300

150

330

180 0

Right Hippocampus Spike Field Coherence at +- 4 ms

• Patient specific: offline learning & online adaptation

• Closed-loop: non-linear adaptive stim-artifact removal28

Page 29: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 2929

Demo of UCLA NMU

Page 30: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 30

S. Basir-Kazeruni, S. Vlaski, H. Salami, A.H. Sayed, and D. Marković, IEEE EMBS Conf. on Neural Eng., pp. 186-189, May 2017.

Measurements on adjacent channel(s)

30

Waveform Shape Agnostic Adaptive Stimulation Artifact Rejection

Page 31: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 3131

True Concurrent Stimulation + Sensing

signal (s) + artifact (a)

cleaned signal (s )

without ASAR with ASAR

Page 32: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

1cm3mm

System Approach to Integration & Miniaturization

Page 33: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

Companion External (Trial) Device

LEGO-style assembly

IRB-approved for human recordings at UCLA

Page 34: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

• Closed-loop stimulation

• Up to 256 channels

• Wireless charging

• Wireless data

Modular Implant Device

Page 35: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

23 mm

5 mm

Neuromodulator

Page 36: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

64-channel

sensing and

stimulation

Neuromodulator

Page 37: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

Depth

array

Surface

array

64 contacts

Page 38: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 3838

Page 39: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 3939

Page 40: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 40

780µW/cm2

Demonstration of Autonomous Energy

Regulated Pout = 645µWΔT=3.5K effective

+ –170mV

Measured VTEH

Acknowledgment: Rick Staba and Joyel Almajano (UCLA Neurology)

in-vivo (3.5K)

fully autonomous

Early feasibility study

• Smallest footprint (by >6x)

• Best power density (by >7x)

Next: anatomical integration

R-C Bank

MPPT

AD

MN

ILR

O

CTSCP

ModeSensing

Native

NM

OS

D. Rozgić and D. Marković, VLSI’15, pp. 278-279.

1.4mm x 1.4mm

40

Page 41: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 41

The Brain Basis for Group Dynamics

Wireless data link

r1

rk

rN

sNsks1

Animal k:

rk – sense

sk – stim

Battery-less wireless motes

Record neuronal signatures of group dynamics + injury

Multi-channel, multi-animal closed-loop control system

Autism, ADD,Social NS

41

C. Giza, D. Hovda (UCLA)

Page 42: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 42

Brain Stethoscope: EEG in Your Pocket

with Josef Parvizi and Chris Chafe (Stanford)

Linking Neurology and Computer Music

42

Page 44: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 44

Hear Brains of Other People?

Technology:dense EEG array + vocal synthesis

downloadBrainTunes

44

Page 45: the Next Decade - IEEESet/Reset Voltage Device Size R P 5and TMR Die Area Supply Voltage 65-nm CMOS 0.5V / 1.1V.8kO / % 19 0x 6 nm2 23.43 x 13.05 mm2 1.5V Flexible logic Post-CMOS

D. Markovic / Slide 45

• Facilitate new clinical science▪ Translation to therapy

Revolutionizing Brain Therapies

45

• Network neurotechnology

• Electrical engineering:Signal processing, control, circuits, power, data, …

Neuro-science

Medicine

Engineering