STF18N60M2 - S · PDF fileThis is information on a product in full production. February 2014...

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This is information on a product in full production. February 2014 DocID024729 Rev 3 1/13 13 STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Q g Power MOSFET in a TO-220FP package Datasheet production data Figure 1. Internal schematic diagram Features Extremely low gate charge Lower R DS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Applications Switching applications LLC converters, resonant converters Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Q g . This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. AM15572v1 TO-220FP 1 2 3 Order code V DS @ T Jmax R DS(on) max I D STF18N60M2 650 V 0.28 Ω 13 A Table 1. Device summary Order code Marking Package Packaging STF18N60M2 18N60M2 TO-220FP Tube www.st.com

Transcript of STF18N60M2 - S · PDF fileThis is information on a product in full production. February 2014...

Page 1: STF18N60M2 - S · PDF fileThis is information on a product in full production. February 2014 DocID024729 Rev 3 1/13 13 STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus

This is information on a product in full production.

February 2014 DocID024729 Rev 3 1/13

13

STF18N60M2

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg

Power MOSFET in a TO-220FP package

Datasheet − production data

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Lower RDS(on)

x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications• Switching applications

• LLC converters, resonant converters

DescriptionThis device is an N-channel Power MOSFET

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. This

revolutionary Power MOSFET associates a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

AM15572v1

TO-220FP

1

2

3

Order code VDS @ TJmax RDS(on) max ID

STF18N60M2 650 V 0.28 Ω 13 A

Table 1. Device summary

Order code Marking Package Packaging

STF18N60M2 18N60M2 TO-220FP Tube

www.st.com

Page 2: STF18N60M2 - S · PDF fileThis is information on a product in full production. February 2014 DocID024729 Rev 3 1/13 13 STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus

Contents STF18N60M2

2/13 DocID024729 Rev 3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Page 3: STF18N60M2 - S · PDF fileThis is information on a product in full production. February 2014 DocID024729 Rev 3 1/13 13 STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus

DocID024729 Rev 3 3/13

STF18N60M2 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VGS

Gate-source voltage ± 25 V

ID

Drain current (continuous) at TC

= 25 °C 13(1)

1. Limited by maximum junction temperature

A

ID

Drain current (continuous) at TC

= 100 °C 8(1)

A

IDM

(2)

2. Pulse width limited by safe operating area

Drain current (pulsed) 52(1)

A

PTOT

Total dissipation at TC

= 25 °C 25 W

dv/dt (3)

3. ISD

≤ 13 A, di/dt ≤ 400 A/μs; VDS

peak

< V(BR)DSS

, VDD

=400 V.

Peak diode recovery voltage slope 15 V/ns

dv/dt(4)

4. VDS

≤ 480 V

MOSFET dv/dt ruggedness 50 V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s,TC

= 25 °C)

2500 V

Tstg

Storage temperature

- 55 to 150 °C

Tj

Max. operating junction temperature

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case

Thermal resistance junction-case max 5 °C/W

Rthj-amb

Thermal resistance junction-ambient max 62.5 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

IAR

Avalanche current, repetetive or not

repetetive (pulse width limited by Tjmax

)

3 A

EAS

Single pulse avalanche energy (starting

Tj=25°C, I

D= I

AR; V

DD=50)

135 mJ

Page 4: STF18N60M2 - S · PDF fileThis is information on a product in full production. February 2014 DocID024729 Rev 3 1/13 13 STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus

Electrical characteristics STF18N60M2

4/13 DocID024729 Rev 3

2 Electrical characteristics

(TC

= 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID

= 1 mA, VGS

= 0 600 V

IDSS

Zero gate voltage

drain current (VGS

= 0)

VDS

= 600 V 1 μA

VDS

= 600 V, TC

=125 °C 100 μA

IGSS

Gate-body leakage

current (VDS

= 0)

VGS

= ± 25 V ±10 μA

VGS(th)

Gate threshold voltage VDS

= VGS

, ID

= 250 μA 2 3 4 V

RDS(on)

Static drain-source

on-resistance

VGS

= 10 V, ID

= 6.5 A 0.255 0.28 Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss

Input capacitance

VDS

= 100 V, f = 1 MHz,

VGS

= 0

- 791 - pF

Coss

Output capacitance - 40 - pF

Crss

Reverse transfer

capacitance- 5.6 - pF

Coss eq.

(1)

1. Coss eq.

is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VDS

= 0 to 480 V, VGS

= 0 - 164.5 - pF

RG

Intrinsic gate

resistance

f = 1 MHz, ID

= 0 - 5.6 - Ω

Qg

Total gate chargeV

DD = 480 V, I

D = 13 A,

VGS

= 10 V

(see Figure 15)

- 21.5 - nC

Qgs

Gate-source charge - 3.2 - nC

Qgd

Gate-drain charge - 11.3 - nC

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on)

Turn-on delay time

VDD

= 300 V, ID

= 6.5 A,

RG

= 4.7 Ω, VGS

= 10 V

(see Figure 14 and Figure 19)

- 12 - ns

tr

Rise time - 9 - ns

td(off)

Turn-off delay time - 47 - ns

tf

Fall time - 10.6 - ns

Page 5: STF18N60M2 - S · PDF fileThis is information on a product in full production. February 2014 DocID024729 Rev 3 1/13 13 STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus

DocID024729 Rev 3 5/13

STF18N60M2 Electrical characteristics

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD

Source-drain current - 13 A

ISDM

(1)

1. Pulse width limited by safe operating area.

Source-drain current (pulsed) - 52 A

VSD

(2)

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage ISD

= 13 A, VGS

= 0 - 1.6 V

trr

Reverse recovery time

ISD

= 13 A, di/dt = 100 A/μs

VDD

= 60 V (see Figure 16)

- 305 ns

Qrr

Reverse recovery charge - 3.3 μC

IRRM

Reverse recovery current - 22 A

trr

Reverse recovery timeISD

= 13 A, di/dt = 100 A/μs

VDD

= 60 V, Tj = 150 °C

(see Figure 16)

- 417 ns

Qrr

Reverse recovery charge - 4.6 μC

IRRM

Reverse recovery current - 22 A

Page 6: STF18N60M2 - S · PDF fileThis is information on a product in full production. February 2014 DocID024729 Rev 3 1/13 13 STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus

Electrical characteristics STF18N60M2

6/13 DocID024729 Rev 3

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

ID

1

0.1

0.010.1 1 100 VDS(V)10

(A)

Operation in

this

area is

Limite

d by max RDS(o

n)

10µs

100µs

1ms

10msTj=150°CTc=25°C

Singlepulse

10

AM15834v1

ID

15

10

5

00 10 VDS(V)

(A)

5 15

20

4V

5V

6V

VGS=7, 8, 9, 10V

20

25

30

AM15837v1ID

10

00 4 VGS(V)8

(A)

2 6

20

30VDS=18V

10

5

15

25

AM15838v1

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

VDS

VGS

6

4

2

00 Qg(nC)

(V)

5

8

10

VDD=480V

300

200

100

0

400

VDS

10

500

VDS(V)

ID=13A

15 20 25

12

AM15839v1RDS(on)

0.260

0.255

0.250

0.2450 2 ID(A)

(Ω)

0.265

4

VGS=10V0.270

6 8 10 12

AM15840v1

Page 7: STF18N60M2 - S · PDF fileThis is information on a product in full production. February 2014 DocID024729 Rev 3 1/13 13 STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus

DocID024729 Rev 3 7/13

STF18N60M2 Electrical characteristics

Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs. temperature

Figure 10. Normalized on-resistance vs temperature

Figure 11. Source-drain diode forward characteristics

Figure 12. Normalized V(BR)DSS vs temperature Figure 13. Output capacitance stored energy

C

100

10

10.1 10 VDS(V)

(pF)

1 100

Ciss

Coss

Crss

1000

AM15841v1 VGS(th)

0.8

0.7TJ(°C)

(norm)

-50

0.9

-25 50 1000 25 75 125

1.0

1.1

ID=250 µA

AM15828v1

RDS(on)

1.3

1.1

0.9

0.7

TJ(°C)

(norm)

0.5-50 -25 0 25

ID=6.5 A

50 75 100 125

1.5

1.7

1.9

2.1

2.3

2.5VGS=10V

AM15829v1VSD

0 2 ISD(A)

(V)

40

0.2

0.4

0.6

TJ=-50°C

TJ=150°CTJ=25°C

0.8

6

1

1.2

1.4

8 10 12

AM15842v1

V(BR)DSS

0.99

0.97

0.95

0.93TJ(°C)

(norm)

-50

1.01

ID=1mA

-25 50 100

1.03

0 25 75 125

1.05

1.07

1.09

1.11

AM15831v1Eoss

0 VDS(V)

(µJ)

200100 5000

1

2

3

300 400 600

4

5

6

AM15843v1

Page 8: STF18N60M2 - S · PDF fileThis is information on a product in full production. February 2014 DocID024729 Rev 3 1/13 13 STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus

Test circuits STF18N60M2

8/13 DocID024729 Rev 3

3 Test circuits

Figure 14. Switching times test circuit for resistive load

Figure 15. Gate charge test circuit

Figure 16. Test circuit for inductive load switching and diode recovery times

Figure 17. Unclamped inductive load test circuit

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

Page 9: STF18N60M2 - S · PDF fileThis is information on a product in full production. February 2014 DocID024729 Rev 3 1/13 13 STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus

DocID024729 Rev 3 9/13

STF18N60M2 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK®

is an ST trademark.

Page 10: STF18N60M2 - S · PDF fileThis is information on a product in full production. February 2014 DocID024729 Rev 3 1/13 13 STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus

Package mechanical data STF18N60M2

10/13 DocID024729 Rev 3

Figure 20. TO-220FP drawing

7012510_Rev_K_B

Page 11: STF18N60M2 - S · PDF fileThis is information on a product in full production. February 2014 DocID024729 Rev 3 1/13 13 STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus

DocID024729 Rev 3 11/13

STF18N60M2 Package mechanical data

Table 9. TO-220FP mechanical data

Dim.mm

Min. Typ. Max.

A 4.4 4.6

B 2.5 2.7

D 2.5 2.75

E 0.45 0.7

F 0.75 1

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.2

G1 2.4 2.7

H 10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L5 2.9 3.6

L6 15.9 16.4

L7 9 9.3

Dia 3 3.2

Page 12: STF18N60M2 - S · PDF fileThis is information on a product in full production. February 2014 DocID024729 Rev 3 1/13 13 STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus

Revision history STF18N60M2

12/13 DocID024729 Rev 3

5 Revision history

Table 10. Document revision history

Date Revision Changes

04-Jun-2013 1 First release.

05-Jun-2013 2

– Added: note 2 in Table 2– Modified: typical value for C

iss, C

oss eq., Q

g, Q

gs, Q

gd

– Modified: Figure 10 and 11

– Minor text changes

28-Feb-2014 3

– Modified: note 1 in Table 2

– Rthj-case

value in Table 3– Minor text changes

Page 13: STF18N60M2 - S · PDF fileThis is information on a product in full production. February 2014 DocID024729 Rev 3 1/13 13 STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus

DocID024729 Rev 3 13/13

STF18N60M2

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