STF15NM65N, STFI15NM65N - st.com .This is information on a product in full production. July 2016

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Transcript of STF15NM65N, STFI15NM65N - st.com .This is information on a product in full production. July 2016

  • This is information on a product in full production.

    July 2016 DocID13853 Rev 4 1/15

    STF15NM65N,STFI15NM65N

    N-channel 650 V, 0.35 typ., 12 A MDmesh II Power MOSFETs in TO-220FP and IPAKFP packages

    Datasheet - production data

    Figure 1. Internal schematic diagram

    Features

    100% avalanche tested Low input capacitance and gate charge Low gate input resistance

    Applications Switching applications

    DescriptionThese devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFETs associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

    TO-220FP123

    1 2 3

    I PAKFP2

    (TO-281)

    Order code VDSS @Tjmax RDS(on) max. ID

    STF15NM65N710 V 0.38 12 A

    STFI15NM65N

    Table 1. Device summary

    Order code Marking Packages Packing

    STF15NM65N15NM65N

    TO-220FPTube

    STFI15NM65N I2PAKFP (TO-281)

    www.st.com

    http://www.st.com

  • Contents STF15NM65N, STFI15NM65N

    2/15 DocID13853 Rev 4

    Contents

    1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

    2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

    2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

    3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

    4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

    4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

    4.2 I2PAKFP (TO-281) package information . . . . . . . . . . . . . . . . . . . . . . . . . 12

    5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

  • DocID13853 Rev 4 3/15

    STF15NM65N, STFI15NM65N Electrical ratings

    15

    1 Electrical ratings

    Table 2. Absolute maximum ratings

    Symbol ParameterValue

    UnitTO-220FP I2PAKFP

    VDS Drain source voltage 650 V

    VGS Gate source voltage 25 V

    ID Drain current continuous Tc = 25 C 12(1)

    1. Limited by maximum junction temperature.

    A

    ID Drain current continuous Tc = 100 C 7.56 A

    IDM(2)

    2. Pulse width limited by safe operating area.

    Drain current pulsed 48 A

    PTOT Total dissipation at Tc = 25 C 30 W

    dv/dt(3)

    3. ISD 12 A, di/dt 400 A/s, VDSpeak V(BR)DSS, VDD = 80 % V(BR)DSS

    Peak diode recovery voltage slope 15 V/ns

    VISO

    Insulation withstand voltage (RMS from all three leads to external heatsink(t = 1 s; TC = 25 C)

    2500 V

    TJ Operating junction temperature range-55 to 150 C

    Tstg Storage temperature range

    Table 3. Thermal data

    Symbol ParametersValue

    UnitTO-220FP I2PAKFP

    Rthjc Thermal resistance junction-case 4.17 C/W

    Rthj-amb Thermal resistance junction-ambient 62.5 C/W

    Table 4. Avalanche characteristics

    Symbol Parameters Value Unit

    IASAvalanche current, repetitive or not-repetitive (pulse width limited by Tjmax)

    3 A

    EASSingle pulse avalanche energy

    (starting TJ = 25 C, ID = IAR, VDD = 50 V)187 mJ

  • Electrical characteristics STF15NM65N, STFI15NM65N

    4/15 DocID13853 Rev 4

    2 Electrical characteristics

    (TCASE = 25 C unless otherwise specified).

    Table 5. On/off states

    Symbol Parameter Test conditions Min. Typ. Max. Unit

    V(BR)DSS Drain-source breakdown voltage VGS = 0, ID = 1 mA 650 V

    lDSS Zero gate voltage drain current

    VDD = 650 V, VGS=0 1 A

    VDD = 650 V, VGS = 0TC = 125 C

    (1)

    1. Defined by design, not subject to production test

    100 A

    lGSS Gate body leakage VGS= 25 V, VDS = 0 V 100 nA

    VGS(th) Gate threshold voltage ID= 250 A, VGS =VDS 2 3 4 V

    RDS(on)Static drain-source on-resistance

    ID= 6 A, VGS= 10V 0.35 0.38

    Table 6. Dynamic

    Symbol Parameter Test conditions Min. Typ. Ma. Unit

    Ciss Input capacitanceVDS= 50 V, f = 1MHz,

    VGS= 0 V

    - 983 - pF

    Coss Output capacitance - 57 - pF

    Crss Reverse capacitance - 4.5 - pF

    Cosseq (1)

    1. Cross eq: defined as a constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0 to 80 % VDSS.

    Equivalent output. capacitance

    VDS = 0 V to 520 V, VGS = 0 V - 146 - pF

    Rg Intrinsic gate resistance f = 1MHz ID = 0 A - 4.6 -

    Qg Total gate charge VDD= 520 V, ID=12 A, VGS= 10 V (see Figure 13: Gate charge test circuit)

    - 33.3 - nC

    Qgs Gate source charge - 5.7 - nC

    Qgd Gate-drain charge - 17 - nC

    Table 7. Switching times

    Symbol Parameter Test conditions Min. Typ. Max. Unit

    td(on) Turn-on delay time VDD= 325 V, ID = 6 ARg= 4.7 , VGS = 10 V(see Figure 12: Switching times test circuit for resistive load and Figure 17: Switching time waveform)

    - 55.5 - ns

    tr Rise time - 8.5 - ns

    td(off) Turn-off-delay time - 14 - ns

    tf Fall time - 11.4 - ns

  • DocID13853 Rev 4 5/15

    STF15NM65N, STFI15NM65N Electrical characteristics

    15

    Table 8. Source drain diode

    Symbol Parameter Test conditions Min. Typ. Max. Unit

    ISD Source drain current - 12 A

    ISDM(1)

    1. Pulse width limited by safe operating area.

    Source drain current (pulsed)

    - 48 A

    VSD(2)

    2. Pulsed: pulse duration = 300 s, duty cycle 1.5 %

    Forward on voltage ISD = 12 A, VGS = 0 V - 1.6 V

    trr Reverse recovery time ISD = 12 A, di/dt = 100 A/sVDD = 60 V(see Figure 14: Test circuit for inductive load switching and diode recovery times)

    - 428 ns

    QrrReverse recovery charge

    - 4.7 C

    IRRMReverse recovery current

    - 21.5 A

    trr Reverse recovery time ISD= 12 A, di/dt = 100 A/sVDD = 60 V, Tj = 150 C (see Figure 14: Test circuit for inductive load switching and diode recovery times)

    - 570 ns

    QrrReverse recovery charge

    - 6.2 C

    IRRMReverse recovery current

    - 22 A

  • Electrical characteristics STF15NM65N, STFI15NM65N

    6/15 DocID13853 Rev 4

    2.1 Electrical characteristics (curves)

    Figure 2. Safe operating area Figure 3. Thermal impedance

    ID

    10

    1

    0.1

    0.1 1 100 VDS(V)10

    (A)

    Oper

    ation

    in th

    is ar

    ea is

    Limite

    d by

    max

    RDS

    (on)

    10s

    100s

    1ms

    10msTj=150CTc=25CSingle pulse

    0.01

    AM10307v1

    Figure 4. Output characteristics Figure 5. Transfer characteristics

    Figure 6. Static drain-source on-resistance Figure 7. Gate charge vs gate-source voltage

    ID

    15

    10

    5

    00 6 VDS(V)10

    (A)

    2 8 12

    20

    25

    5V

    6V

    VGS=10V

    4 14 16 18 20 22

    AM10308v1ID

    15

    10

    5

    00 4 VGS(V)8

    (A)

    2 6 10

    20

    25VDS=19V

    AM10309v1

    RDS(on)

    0.345

    0.340

    0.335

    0.3300 4 ID(A)

    ()

    2 6

    0.350

    0.355

    0.360

    0.365 VGS=10V

    108 12

    AM10311v1

  • DocID13853 Rev 4 7/15

    STF15NM65N, STFI15NM65N Electrical characteristics

    15

    Figure 11. Normalized VDS vs temperature

    Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature

    Figure 10. Normalized on-resistance vs temp. Source-drain diode forward characteristics

    C

    1000

    100

    10

    10.1 10 VDS(V)

    (pF)

    1 100

    Ciss

    Coss

    Crss

    AM10313v1

    VGS(th)

    1.00

    0.90

    0.80

    0.70-50 0 TJ(C)

    (norm)

    -25

    1.10

    7525 50 100

    ID=250A

    AM10314v1

    RDS(on)

    0.5

    0.7

    -50 0 TJ(C)

    (norm)

    -25 7525 50 100

    0.9

    1.1

    1.3

    1.5

    1.7

    1.9

    2.1ID=6A

    AM10315v1 VSD

    0 4 ISD(A)

    (V)

    2 106 80

    0.2

    0.4

    0.6

    0.8

    1.0

    1.2

    TJ=-50C

    TJ=150C

    TJ=25C

    12

    1.4

    AM10316v1

    VDS

    -50 0 TJ(C)

    (norm)

    -25 7525 50 1000.920.94

    0.96

    0.98

    1.00

    1.02

    1.04

    1.06

    ID=1mA

    1.08

    1.10

    AM09028v1

  • Test circuits STF15NM65N, STFI15NM65N

    8/15 DocID13853 Rev 4

    3 Test circuits

    Figure 12. Switching times test circuit for resistive load

    Figure 13. Gate charge test circuit

    Figure 14. Test circuit for inductive load switching and diode recovery times

    Figure 15. Unclamped inductive load test circuit

    Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform

    AM01468v1

    VGS

    PW

    VD

    RG

    RL

    D.U.T.

    2200

    F3.3F

    VDD

    AM01469v1

    VDD

    47k 1k

    47k

    2.7k

    1k

    12V

    Vi=20V=VGMAX2200F

    PW

    IG=CONST100

    100nF

    D.U.T.

    VG

    AM01470v1

    AD

    D.U.T.

    SB

    G

    25

    A A

    BB

    RG

    G

    FASTDIODE

    D

    S

    L=100H

    F3.3 1000

    F VDD

    AM01471v1

    Vi

    Pw

    VD

    ID

    D.U.T.

    L

    2200F

    3.3F VDD

    AM01472v1

    V(BR)DSS

    VDDVDD

    VD

    IDM

    ID

    AM01473v1

    VDS

    ton

    tdon tdoff

    toff

    tftr

    90%

    10%

    10%

    0

    0

    90%

    90%

    10%

    VGS

  • DocID13853 Rev 4 9/15