STA401A NPN Darlington...PW (mS) – 40 0 50 100 150 20 16 12 8.0 4.0 0 P T (W) Ta ( C) 24 With...

2
161 Characteristic curves IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical) VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA) STA401A (Ta=25°C) Symbol Ratings Unit VCBO 60±10 V VCEO 60±10 V VEBO 6 V IC 4 A ICP 8 (PW10ms, Du50%) A 4 (Ta=25°C) 20 (Tc=25°C) Tj 150 °C Tstg –40 to +150 °C (Ta=25°C) Symbol Unit Conditions ICBO 100 µA VCB=50V IEBO 10 mA VEB=6V VCEO 50 60 70 V IC=10mA hFE 1000 VCE=4V, IC=3A VCE(sat) 2.0 V IC=3A, IB=10mA ton 1.0 µs VCC 30V, tstg 4.0 µs IC=3A, tf 1.5 µs IB1=–IB2=10mA 5 4 3 2 1 0 0 1 2 3 4 1.0mA 0.8mA 0.6mA 0.5mA 0.4mA 0.3mA IB=2.0mA VCE (V) IC (A) 20000 0.05 0.1 1 4 IC (A) 10000 5000 1000 500 100 50 0.5 hFE (VCE=4V) typ 20000 10000 5000 1000 500 100 0.05 0.1 0.5 1 4 Ta=125°C 25°C –30°C hFE IC (A) (VCE=4V) 0.1 2 1 0 0.5 1 4 IC (A) VCE (sat) (V) Ta=–30°C 25°C 125°C (IC / IB=1000) 3 2 1 0 0.2 0.5 1 5 10 50 100 VCE (sat) (V) IB (mA) IC=4A IC=2A IC=3A IC=1A 20 10 5 1.0 0.5 1 5 10 50 100 500 1000 θ j–a (°C / W) PW (mS) –40 0 50 100 150 20 16 12 8.0 4.0 0 PT (W) Ta (°C) 24 With Infinite Heatsink 100×100×2 50×50×2 25×50×2 Without Heatsink With Silicone Grease Natural Cooling Heatsink: Aluminum in mm 10 5 1 0.5 0.1 3 5 10 50 IC (A) VCE (V) 0.05 100 10ms 1ms Single Pulse Without Heatsink Ta=25°C 2 1 3 R1 R2 4 5 6 7 8 9 10 R1: 3ktyp R2: 150typ NPN Darlington With built-in avalanche diode 0 1 VBE (V) 2 3 4 2 1 0 IC (A) (VCE=–4V) Ta=125°C 75°C 25°C –30°C Absolute maximum ratings PT W Equivalent circuit diagram Specification min typ max Electrical characteristics External dimensions D • • • STA (10-pin) Not Recommended for New Designs

Transcript of STA401A NPN Darlington...PW (mS) – 40 0 50 100 150 20 16 12 8.0 4.0 0 P T (W) Ta ( C) 24 With...

  • 161

    Characteristic curvesIC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)

    VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)

    θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)

    STA401A(Ta=25°C)

    Symbol Ratings Unit

    VCBO 60±10 V

    VCEO 60±10 V

    VEBO 6 V

    IC 4 A

    ICP 8 (PW≤10ms, Du≤50%) A

    4 (Ta=25°C)

    20 (Tc=25°C)

    Tj 150 °C

    Tstg –40 to +150 °C

    (Ta=25°C)

    Symbol Unit Conditions

    ICBO 100 µA VCB=50V

    IEBO 10 mA VEB=6V

    VCEO 50 60 70 V IC=10mA

    hFE 1000 VCE=4V, IC=3A

    VCE(sat) 2.0 V IC=3A, IB=10mA

    ton 1.0 µs VCC 30V,

    tstg 4.0 µs IC=3A,

    tf 1.5 µs IB1=–IB2=10mA

    5

    4

    3

    2

    1

    00 1 2 3 4

    1.0mA

    0.8mA

    0.6mA

    0.5mA

    0.4mA

    0.3mA

    IB=2.0

    mA

    VCE (V)

    IC

    (A)

    20000

    0.05 0.1 1 4

    IC (A)

    10000

    5000

    1000

    500

    100

    500.5

    hF

    E

    (VCE=4V)

    typ

    20000

    10000

    5000

    1000

    500

    100

    0.05 0.1 0.5 1 4

    Ta=1

    25°C

    25°C

    –30°Ch

    FE

    IC (A)

    (VCE=4V)

    0.1

    2

    1

    00.5 1 4

    IC (A)

    VC

    E (

    sat)

    (V

    )

    Ta=–30°C

    25°C

    125°C

    (IC / IB=1000)3

    2

    1

    00.2 0.5 1 5 10 50 100

    VC

    E (

    sat)

    (V

    )

    IB (mA)

    IC=4AIC=2A

    IC=3A

    IC=1A

    20

    10

    5

    1.0

    0.51 5 10 50 100 500 1000

    θj–

    a (

    °C /

    W)

    PW (mS)–40 0 50 100 150

    20

    16

    12

    8.0

    4.0

    0

    PT (

    W)

    Ta (°C)

    24

    With Infinite Heatsink

    100×100×2

    50×50×2

    25×50×2Without Heatsink

    With Silicone GreaseNatural CoolingHeatsink: Aluminumin mm

    10

    5

    1

    0.5

    0.1

    3 5 10 50

    IC (

    A)

    VCE (V)

    0.05100

    10ms

    1ms

    Single PulseWithout HeatsinkTa=25°C

    2

    1

    3

    R1 R2

    45

    67

    89

    10

    R1: 3kΩ typ R2: 150Ω typ

    NPN Darlington

    With built-in avalanche diode

    0 1VBE (V)

    2

    3

    4

    2

    1

    0

    IC (

    A)

    (VCE=–4V)

    Ta=1

    25°C

    75°C

    25°C

    –30°

    C

    Absolute maximum ratings

    PT W

    ■ Equivalent circuit diagram

    Specificationmin typ max

    Electrical characteristics

    External dimensions D • • • STA (10-pin)

    Not R

    ecomm

    ende

    d for

    New

    Desi

    gns

  • 190 Transistors

    Package Type (Dimensions)

    • SIP 8 (STA8Pin) • SIP 10 (STA10Pin)

    • SIP 12 (SMA12Pin) • SIP 15 (SMA15Pin)

    • SIP 12 with Fin (SLA12Pin) • SIP 15 with Fin (SLA15Pin)

    • SIP 15 with Fin (SLA15Pin)

    1

    C1.5±0.5

    1.2±

    0.2

    0.5±

    0.15

    7 × P2.54 = 17.78

    Pin No.

    1.0±0.25 0.5±0.15 (2.54)

    20.4 max

    4.7±

    0.5

    11.3

    ±0.2

    2.5

    max

    9.0±

    0.2

    2 3 4 5 6 7 8

    4.0±

    0.2

    31.0±0.2

    10.2

    ±0.2

    (10.

    4)

    2.4

    1.46±0.15

    4.0±0.2

    2.5±0.2

    1.2±0.127.94

    2.54

    a

    b

    0.85–0.1+0.2

    0.55–0.1+0.2

    a: Part Numberb: Lot No.

    31.5max

    9.5m

    in16

    .0±0

    .2

    13.0

    ±0.2

    2.7

    31.0±0.2

    24.4±0.2

    a

    b

    Ellipse3.2±0.15 × 3.8 4.8±0.2

    1.7±0.1

    2.2±0.71.2±0.15 1.45±0.15 0.55–0.1+0.20.85

    –0.1+0.2

    12

    11 × P2.54±0.7 = 27.94±1.0

    Pin1

    a: Part Numberb: Lot No.

    3.2±0.15φ

    31.3±0.2

    4.8±0.2

    1.7±0.1

    2.45±0.2

    9.9±

    0.2

    13.0

    ±0.2

    16.0

    ±0.2

    31.0±0.2

    24.4±0.2

    16.4±0.2

    1.15–0.1+0.2 0.55–0.1

    +0.2

    9.7–

    0.5

    +1.

    0

    0.65–0.1+0.2

    3.2±0.15φ 3.2±0.15 × 3.8φ

    14 × P2.03±0.7=28.42±1.0

    R-End

    4.0±0.7

    (3.0

    )6.

    7±0.

    5

    * **

    1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

    31.0±0.2

    10.2

    ± 0.2

    4.0±0.2

    2.5±0.2

    a

    b

    1.15–0.1+0.2

    0.65–0.1+0.2

    14 × P2.03±0.7= 28.42±1.0* *

    1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

    0.55–0.1+0.2

    9.7–

    0.5

    +1.

    0

    R-End

    4.0±0.7

    (3.0

    )6.

    7±0.

    5

    *

    (Unit:mm)

    9.0±

    0.2

    2.3±

    0.2

    11.3

    ±0.2

    4.7±

    0.5

    0.5±

    0.15

    1.2±

    0.2

    4.0±

    0.2

    0.5±0.15

    C1.5±0.5

    1.0±0.25(2.54)

    9 × 2.54 = 22.86±0.25

    25.25±0.2

    a

    b

    1E

    2B

    3C

    4B

    5C

    6B

    7C

    8B

    9C

    10E

    a: Part Numberb: Lot No.

    31.0±0.2

    9.9±

    0.2

    12.9

    ±0.2

    16±0

    .2

    24.4±0.2

    16.4±0.23.2±0.15 × 3.8

    3.2±0.15

    20 × P1.43±0.5=28.6±1.0

    31.3±0.24±0.7

    4–(R1)

    3±0.

    517

    .9±0

    .6

    (5)

    12

    34

    56

    78

    910

    1112

    1314

    1516

    1718

    1920

    21

    0.65–0.1+0.2

    0.55–0.1

    2.45±0.2

    1.7±0.14.8±0.2

    +0.2

    φ

    φ

    a: Part Numberb: Lot No.

    a

    b

    Gate burr

    Not R

    ecomm

    ende

    d for

    New

    Desi

    gns

    kawano-miho線

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