SLPS296A –FEBRUARY 2012–REVISED JANUARY 2014 ...SLPS296A –FEBRUARY 2012–REVISED JANUARY 2014...

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0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 6 V GS - Gate-to- Source Voltage - V R DS(on29 - On-State Resistance - mT C = 25°C T C = 125ºC I D = 1.5A G001 0 1 2 3 4 5 6 0 2 4 Q g - Gate Charge - nC (nC) V GS - Gate-to-Source Voltage (V) I D = 1.5A V DD = 10V G001 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD25211W1015 SLPS296A – FEBRUARY 2012 – REVISED JANUARY 2014 CSD25211W1015, P-Channel NexFET™ Power MOSFET 1 1 Features 1Ultra-Low On Resistance Ultra-Low Q g and Q gd Small Footprint 1.0 mm × 1.5 mm Low Profile 0.62 mm Height Pb Free Gate-Source Voltage Clamp Gate ESD Protection – 3 kV RoHS Compliant Halogen Free 2 Applications Battery Management Load Switch Battery Protection 3 Description The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Top View Product Summary T A = 25°C unless otherwise stated TYPICAL VALUE UNIT V DS Drain-to-Source Voltage –20 V Q g Gate Charge Total (–4.5V) 3.4 nC Q gd Gate Charge Gate to Drain 0.2 nC R DS(on) Drain-to-Source On Resistance V GS = –2.5 V 36 mV GS = –4.5 V 27 mV GS(th) Voltage Threshold –0.8 V Ordering Information Device Package Media Qty Ship CSD25211W1015 1 × 1.5 Wafer Level Package 7-inch reel 3000 Tape and Reel Absolute Maximum Ratings T A = 25°C unless otherwise stated VALUE UNIT V DS Drain-to-Source Voltage -20 V V GS Gate-to-Source Voltage -6 V I D Continuous Drain Current, T A = 25°C (1) -3.2 A I DM Pulsed Drain Current, T A = 25°C (2) -9.5 A I G Continuous Drain Current, T A = 25°C -0.5 A Pulsed Drain Current -7 A P D Power Dissipation (1) 1 W T STG Storage Temperature Range –55 to 150 °C T J Operating Junction Temperature Range (1) Typical R θJA = 119°C/W on 1 inch 2 of 2 oz. Cu on 0.06-inch thick FR4 PCB. (2) Pulse width 10 μs, duty cycle 2% R DS(ON) vs V GS Gate Charge 3.1 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

Transcript of SLPS296A –FEBRUARY 2012–REVISED JANUARY 2014 ...SLPS296A –FEBRUARY 2012–REVISED JANUARY 2014...

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VGS ­ Gate­to­ Source Voltage ­ V

RD

S(o

n)

­ O

n­S

tate

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TC = 25°CTC = 125ºC

ID = 1.5A

G001

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Qg ­ Gate Charge ­ nC (nC)

VG

S ­

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­to­S

ourc

e V

oltage (

V) ID = 1.5A

VDD = 10V

G001

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD25211W1015SLPS296A –FEBRUARY 2012–REVISED JANUARY 2014

CSD25211W1015, P-Channel NexFET™ Power MOSFET

1

1 Features1• Ultra-Low On Resistance• Ultra-Low Qg and Qgd

• Small Footprint 1.0 mm × 1.5 mm• Low Profile 0.62 mm Height• Pb Free• Gate-Source Voltage Clamp• Gate ESD Protection – 3 kV• RoHS Compliant• Halogen Free

2 Applications• Battery Management• Load Switch• Battery Protection

3 DescriptionThe device is designed to deliver the lowest onresistance and gate charge in the smallest outlinepossible with excellent thermal characteristics in anultra-low profile.

Top View

Product SummaryTA = 25°C unless otherwise stated TYPICAL VALUE UNIT

VDS Drain-to-Source Voltage –20 V

Qg Gate Charge Total (–4.5V) 3.4 nC

Qgd Gate Charge Gate to Drain 0.2 nC

RDS(on) Drain-to-Source On ResistanceVGS = –2.5 V 36 mΩ

VGS = –4.5 V 27 mΩ

VGS(th) Voltage Threshold –0.8 V

Ordering InformationDevice Package Media Qty Ship

CSD25211W1015 1 × 1.5 WaferLevel Package 7-inch reel 3000 Tape and

Reel

Absolute Maximum RatingsTA = 25°C unless otherwise stated VALUE UNIT

VDS Drain-to-Source Voltage -20 V

VGS Gate-to-Source Voltage -6 V

ID Continuous Drain Current, TA = 25°C(1) -3.2 A

IDM Pulsed Drain Current, TA = 25°C(2) -9.5 A

IGContinuous Drain Current, TA = 25°C -0.5 A

Pulsed Drain Current -7 A

PD Power Dissipation(1) 1 W

TSTG Storage Temperature Range–55 to 150 °C

TJ Operating Junction Temperature Range

(1) Typical RθJA = 119°C/W on 1 inch2 of 2 oz. Cu on 0.06-inchthick FR4 PCB.

(2) Pulse width ≤ 10 µs, duty cycle ≤ 2%

RDS(ON) vs VGS Gate Charge

3.1 Electrostatic Discharge CautionThese devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.

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M0155-01

P-Chan 1.0x1.5 CSP TTA MAX Rev1

M0156-01

P-Chan 1.0x1.5 CSP TTA MIN Rev1

2

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3.2 Electrical Characteristics(TA = 25°C unless otherwise stated)

PARAMETER TEST CONDITIONS MIN TYP MAX UNITStatic CharacteristicsBVDSS Drain-to-Source Voltage VGS = 0 V, ID = –250 μA –20 VBVGSS Gate-to-Source Voltage VDS = 0 V, IG = –250 μA –6.1 –7.2 VIDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = –16 V –1 μAIGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = –6 V –100 nAVGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = –250 μA –0.5 –0.8 –1.1 V

RDS(on) Drain-to-Source On ResistanceVGS = –2.5 V, ID = –1.5 A 36 44 mΩVGS = –4.5 V, ID = –1.5 A 27 33 mΩ

gfs Transconductance VDS = –10 V, ID = –1.5 A 12 SDynamic CharacteristicsCISS Input Capacitance

VGS = 0 V, VDS = –10 V, ƒ = 1 MHz475 570 pF

COSS Output Capacitance 234 281 pFCRSS Reverse Transfer Capacitance 10.5 13.1 pFQg Gate Charge Total (–4.5 V)

VDS = –10 V, ID = –1.5 A

3.4 4.1 nCQgd Gate Charge Gate to Drain 0.2 nCQgs Gate Charge Gate to Source 1.1 nCQg(th) Gate Charge at Vth 0.6 nCQOSS Output Charge VDS = –10 V, VGS = 0 V 3.8 nCtd(on) Turn On Delay Time

VDS = –10 V, VGS = –4.5 V, ID = –1.5 ARG = 4 Ω

13.6 nstr Rise Time 8.8 nstd(off) Turn Off Delay Time 36.9 nstf Fall Time 14.2 nsDiode CharacteristicsVSD Diode Forward Voltage IS = –1.5 A, VGS = 0 V –0.8 –1 VQrr Reverse Recovery Charge

Vdd= –10 V, IF = –1.5 A, di/dt = 200 A/μs6.9 nC

trr Reverse Recovery Time 11.6 ns

3.3 Thermal Characteristics(TA = 25°C unless otherwise stated)

PARAMETER MIN TYP MAX UNIT

R θJAThermal Resistance Junction to Ambient (Minimum Cu area) 230 °C/WThermal Resistance Junction to Ambient (1 in2 Cu area) 149 °C/W

Max RθJA = 149°C/Wwhen mounted on 1inch2 of 2 oz. Cu.

Max RθJA = 230°C/Wwhen mounted onminimum pad area of2 oz. Cu.

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I DS ­

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in­t

o­S

ourc

e C

urr

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A

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VGS =4.0V

VGS =2.5V

VGS =2.0V

G001

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I DS ­

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in­t

o­S

ourc

e C

urr

ent ­

A

TC = 125°C

TC = 25°C

TC = −55°C

VDS = 5V

G001

3

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4 Typical MOSFET Characteristics(TA = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics

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aliz

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n­S

tate

Resis

tance

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I SD −

Sourc

e­t

o­D

rain

Curr

ent ­

A

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ID = 250µA

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Crss = Cgd

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Typical MOSFET Characteristics (continued)(TA = 25°C unless otherwise stated)

Figure 4. Gate Charge Figure 5. Capacitance

Figure 6. Threshold Voltage vs Temperature Figure 7. On Resistance vs Gate Voltage

Figure 8. Normalized On Resistance vs Temperature Figure 9. Typical Diode Forward Voltage

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urr

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I DS ­

Dra

in­t

o­S

ourc

e C

urr

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1ms

10ms

100ms

1s

DC

Single Pulse

Typical RthetaJA = 184ºC/W(min Cu)

Area Limited

by Rds(on)

G001

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10

50

0.01 0.1 1

t(AV) ­ Time in Avalanche ­ ms

I (A

V)

­ P

eak A

vala

nche C

urr

ent ­

A

TC = 125°C

TC = 25°C

G001

5

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Typical MOSFET Characteristics (continued)(TA = 25°C unless otherwise stated)

Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching

Figure 12. Maximum Drain Current vs Temperature

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5 Mechanical Data

5.1 CSD25211W1015 Package Dimensions

NOTE: All dimensions are in mm (unless otherwise specified)

PinoutPOSITION DESIGNATION

C1, C2 DrainA1 Gate

A2, B1, B2 Source

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M0158-01

0.50

1 2

Ø 0.25

0.5

0

1.0

0

B

A

C

7

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5.2 Land Pattern Recommendation

NOTE: All dimensions are in mm (unless otherwise specified)

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6 Revision HistoryNOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Original (February 2012) to Revision A Page

• Included part number in title ................................................................................................................................................... 1• Added more precision in the CSD25211W1015 Package Dimensions.................................................................................. 6

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PACKAGE OPTION ADDENDUM

www.ti.com 10-Dec-2020

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead finish/Ball material

(6)

MSL Peak Temp(3)

Op Temp (°C) Device Marking(4/5)

Samples

CSD25211W1015 ACTIVE DSBGA YZC 6 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -55 to 150 25211

(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substancedo not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI mayreference these types of products as "Pb-Free".RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide basedflame retardants must also meet the <=1000ppm threshold requirement.

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to twolines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

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TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

CSD25211W1015 DSBGA YZC 6 3000 180.0 8.4 1.09 1.56 0.65 2.0 8.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 18-Sep-2020

Pack Materials-Page 1

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*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

CSD25211W1015 DSBGA YZC 6 3000 182.0 182.0 20.0

PACKAGE MATERIALS INFORMATION

www.ti.com 18-Sep-2020

Pack Materials-Page 2

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IMPORTANT NOTICE AND DISCLAIMER

TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you permission to use these resources only for development of an application that uses the TI products described in the resource. Other reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources.TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable warranties or warranty disclaimers for TI products.

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