Single Cell Lithium-Ion Charge Management Controller with Mode Indicator and Charge...

M MCP73827Single Cell Lithium-Ion Charge Management Controller

with Mode Indicator and Charge Current Monitor

Features• Linear Charge Management Controller for Single

Lithium-Ion Cells• High Accuracy Preset Voltage Regulation:

+ 1% (max)• Two Preset Voltage Regulation Options:

- 4.1V - MCP73827-4.1- 4.2V - MCP73827-4.2

• Programmable Charge Current• Automatic Cell Preconditioning of Deeply

Depleted Cells, Minimizing Heat Dissipation Dur-ing Initial Charge Cycle

• Charge Status Output for LED Drive or Microcon-troller Interface

• Charge Current Monitor Output• Automatic Power-Down when Input Power

Removed• Temperature Range: -20°C to +85°C• Packaging: 8-Pin MSOP

Applications• Single Cell Lithium-Ion Battery Chargers• Personal Data Assistants• Cellular Telephones• Hand Held Instruments• Cradle Chargers• Digital Cameras

Typical Application Circuit

DescriptionThe MCP73827 is a linear charge management con-troller for use in space-limited, cost sensitive applica-tions. The MCP73827 combines high accuracyconstant voltage, controlled current regulation, cell pre-conditioning, and charge status indication in a spacesaving 8-pin MSOP package. The MCP73827 providesa stand-alone charge management solution.The MCP73827 charges the battery in three phases:preconditioning, controlled current, and constant volt-age. If the battery voltage is below the internal low-volt-age threshold, the battery is preconditioned with afoldback current. The preconditioning phase protectsthe lithium-ion cell and minimizes heat dissipation. Following the preconditioning phase, the MCP73827enters the controlled current phase. The MCP73827allows for design flexibility with a programmable chargecurrent set by an external sense resistor. The chargecurrent is ramped up, based on the cell voltage, fromthe foldback current to the peak charge current estab-lished by the sense resistor. This phase is maintaineduntil the battery reaches the charge-regulation voltage.

Then, the MCP73827 enters the final phase, constantvoltage. The accuracy of the voltage regulation is betterthan +1% over the entire operating temperature rangeand supply voltage range. The MCP73827-4.1 is presetto a regulation voltage of 4.1V, while theMCP73827-4.2 is preset to 4.2V. The charge statusoutput, MODE, indicates when the charge cycle hastransitioned to constant voltage mode. The chargecycle can be terminated by a timer that is started whenthe MODE pin goes to a logic High or by monitoring thecharge current monitor output, IMON, for a minimumcurrent.The MCP73827 operates with an input voltage rangefrom 4.5V to 5.5V. The MCP73827 is fully specifiedover the ambient temperature range of -20°C to +85°C.

Package Type1 2

5

7

8

MCP73827

6

MODE

332Ω

4IMON3

+-

GND

VDRVVSNS

VIN VBAT

SHDN

10 µF

100 kΩ

100 mΩVIN

Single Lithium-IonCell

NDS8434MA2Q705

500 mA Lithium-Ion Battery Charger

5V

10 µF

MSOP

VDRV

VSNS

VIN

VBAT

SHDN 1

2

3

4

8

7MCP73827

5

6MODE

IMON

GND

2002 Microchip Technology Inc. DS21704A-page 1

MCP73827
Functional Block Diagram
+ - MO

DE

C

OM

PAR

ATO

R

MO

DE

I MO

N+ –

CH

AR

GE

CU

RR

ENT

M

ON

ITO

R A

MPL

IFIE

R

138

k Ω10

0 kΩ VO

LTAG

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ON

TRO

L AM

PLIF

IER

SH

UTD

OW

N,

RE

FER

ENC

EG

ENE

RAT

OR

VR

EF (1

.2V)

+ –

VR

EF

VIN

CH

AR

GE

CU

RR

ENT

CO

NTR

OL

AM

PLIF

IER

+ –

VR

EF

SHD

N

V BAT

GN

D

V DR

V

+–

CH

AR

GE

C

UR

REN

T AM

PLIF

IER

V IN

VSN

S

1.1

kΩ

12kΩ

500

kΩ

75kΩ

75kΩ35

2.5

kΩ

(NO

TE 1

)

CH

AR

GE

CU

RR

ENT

FO

LDBA

CK

AM

PLI

FIER

+ –37

.5kΩ

112.

5kΩ

V IN

0.3V

CLA

MP

NO

TE 1

: Va

lue

= 34

0.5K

Ω fo

r MC

P73

827-

4.1

V

alue

= 3

52.5

KΩ fo

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P738

27-4

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DS21704A-page 2 2002 Microchip Technology Inc.

MCP73827
1.0 ELECTRICAL
CHARACTERISTICS1.1 Maximum Ratings*

VIN...................................................................... -0.3V to 6.0VAll inputs and outputs w.r.t. GND ................-0.3 to (VIN+0.3)VCurrent at MODE Pin .............................................. +/-30 mACurrent at VDRV.......................................................... +/-1 mAMaximum Junction Temperature, TJ.............................. 150°CStorage temperature .....................................-65°C to +150°CESD protection on all pins ..................................................≥ 4 kV

*Notice: Stresses above those listed under “MaximumRatings” may cause permanent damage to the device.This is a stress rating only and functional operation ofthe device at those or any other conditions above thoseindicated in the operational listings of this specificationis not implied. Exposure to maximum rating conditionsfor extended periods may affect device reliability.

PIN FUNCTION TABLE

DC CHARACTERISTICS: MCP73827-4.1, MCP73827-4.2

Pin Name Description

1 SHDN Logic Shutdown

2 GND Battery Management0V Reference

3 MODE Charge Status Output

4 IMON Charge Current Monitor5 VBAT Cell Voltage Monitor Input

6 VDRV Drive Output7 VSNS Charge Current Sense Input

8 VIN Battery ManagementInput Supply

Unless otherwise specified, all limits apply for VIN = [VREG(typ)+1V], RSENSE = 500 mΩ, TA = -20°C to +85°C.Typical values are at +25°C. Refer to Figure 1-1 for test circuit.

Parameter Sym Min Typ Max Units ConditionsSupply Voltage VIN 4.5 — 5.5 VSupply Current IIN —

—0.5250

15560

µA Shutdown, VSHDN = 0VConstant Voltage Mode

Voltage Regulation (Constant Voltage Mode)Regulated Output Voltage VREG 4.059

4.1584.14.2

4.1414.242

VV

MCP73827-4.1 onlyMCP73827-4.2 only

Line Regulation ∆VBAT -10 — 10 mV VIN = 4.5V to 5.5V, IOUT = 75 mA

Load Regulation ∆VBAT -1 +0.1 1 mV IOUT=10 mA to 75 mAOutput Reverse Leakage Current ILK — 8 — µA VIN=Floating, VBAT=VREG

External MOSFET Gate DriveGate Drive Current IDRV —

0.08——

1—

mAmA

Sink, CV ModeSource, CV Mode

Gate Drive Minimum Voltage VDRV — 1.6 — VCurrent Regulation (Controlled Current Mode)Current Sense Gain ACS — 100 — dB ∆(VSNS-VDRV) / ∆VBAT

Current Limit Threshold VCS 40 53 75 mV (VIN-VSNS) at IOUT

Foldback Current Scale Factor K — 0.43 — A/ACharge Status Indicator - MODEThreshold Voltage VTH — VREG — VLow Output Voltage VOL — — 400 mV ISINK = 10 mALeakage Current ILK — — 1 µA ISINK=0 mA, VMODE=5.5VShutdown Input - SHDNInput High Voltage Level VIH 40 — — %VIN

Input Low Voltage Level VIL — — 25 %VIN

Input Leakage Current ILK — — 1 µA VSHDN=0V to 5.5VCharge Current Monitor - IMONCharge Current Monitor Gain AIMON — 26 — V/V ∆VIMON / ∆(VIN-VSNS)


MCP73827
TEMPERATURE SPECIFICATIONS
FIGURE 1-1: MCP73827 Test Circuit.

Unless otherwise specified, all limits apply for VIN = 4.5V-5.5VParameters Symbol Min Typ Max Units Conditions

Temperature RangesSpecified Temperature Range TA -20 — +85 °COperating Temperature Range TA -40 — +125 °CStorage Temperature Range TA -65 — +150 °C

Package Thermal Resistance

Thermal Resistance, 8L-MSOP θJA — 206 — °C/WSingle Layer SEMI G42-88 Standard Board, Natural Convection

GND

VDRVVSNS

VIN VBAT

SHDN1 2

5

7

8

622 µF

22 µF100 kΩ

RSENSEVIN = 5.1V NDS8434 IOUT

VOUT

(MCP73827-4.1)

VIN = 5.2V(MCP73827-4.2)

MCP73827

MODE3 4IMON

100 kΩ


MCP73827
2.0 TYPICAL PERFORMANCE CHARACTERISTICS
Note: Unless otherwise indicated, IOUT = 10 mA, Constant Voltage Mode, TA = 25°C. Refer to Figure 1-1 for test circuit.

FIGURE 2-1: Output Voltage vs. Output Current(MCP73827-4.2).

FIGURE 2-2: Output Voltage vs. Input Voltage(MCP73827-4.2)

FIGURE 2-3: Output Voltage vs. Input Voltage(MCP73827-4.2)

FIGURE 2-4: Supply Current vs. Output Current.

FIGURE 2-5: Supply Current vs. Input Voltage.

FIGURE 2-6: Supply Current vs. Input Voltage.

Note: The graphs and tables provided following this note are a statistical summary based on a limited number ofsamples and are provided for informational purposes only. The performance characteristics listed hereinare not tested or guaranteed. In some graphs or tables, the data presented may be outside the specifiedoperating range (e.g., outside specified power supply range) and therefore outside the warranted range.

4.195

4.196

4.197

4.198

4.199

4.200

4.201

4.202

4.203

4.204

4.205

0 200 400 600 800 1000

Output Current (mA)

Out

put V

olta

ge (V

)

4.195

4.196

4.197

4.198

4.199

4.200

4.201

4.202

4.203

4.204

4.205

4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5

Input Voltage (V)

Out

put V

olta

ge (V

)

IOUT = 1000 mA

4.195

4.196

4.197

4.198

4.199

4.200

4.201

4.202

4.203

4.204

4.205

4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5

Input Voltage (V)

Out

put V

olta

ge (V

)

IOUT = 10 mA

200

220

240

260

280

300

0 200 400 600 800 1000

Output Current (mA)

Supp

ly C

urre

nt (µ

A)

200

220

240

260

280

300

4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5

Input Voltage (V)

Supp

ly C

urre

nt (µ

A)

IOUT = 1000 mA

200

220

240

260

280

300

4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5

Input Voltage (V)

Supp

ly C

urre

nt (µ

A)

IOUT = 10 mA


MCP73827
FIGURE 2-7: Output Reverse Leakage Current vs.Output Voltage.

FIGURE 2-8: Output Reverse Leakage Current vs.Output Voltage.

FIGURE 2-9: Current Limit Foldback.

FIGURE 2-10: Supply Current vs. Temperature.

FIGURE 2-11: Output Voltage vs. Temperature(MCP73827-4.2).

FIGURE 2-12: Power-Up / Power-Down.

0

2

4

6

8

10

12

2.0 2.5 3.0 3.5 4.0 4.5

Output Voltage (V)

Out

put R

ever

se L

eaka

ge C

urre

nt (

µA)

85oC

25oC

-20oC

VIN = FloatingVSHDN = VOUT

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

2.0 2.5 3.0 3.5 4.0 4.5

Output Voltage (V)

Out

put R

ever

se L

eaka

ge C

urre

nt (

µA)

85oC

25oC

-20oC

VIN = FloatingVSHDN = GND

0.000

0.500

1.000

1.500

2.000

2.500

3.000

3.500

4.000

4.500

0 20 40 60 80 100 120

Output Current (mA)

Out

put V

olta

ge (V

)

150

175

200

225

250

275

300

-20 -10 0 10 20 30 40 50 60 70 80

Temperature (oC)

Supp

ly C

urre

nt (µ

A)

4.190

4.192

4.194

4.196

4.198

4.200

4.202

4.204

4.206

-20 -10 0 10 20 30 40 50 60 70 80

Temperature (oC)

Out

put V

olta

ge (V

)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0 1 2 3 4 5 6 7 8 9 10Input Voltage (V)

Out

put V

olta

ge (V

)

Power Up Power Down

4 3 2 1 0


MCP73827
FIGURE 2-13: Line Transient Response.

FIGURE 2-14: Line Transient Response.

FIGURE 2-15: Load Transient Response.

FIGURE 2-16: Load Transient Response.


MCP73827
3.0 PIN DESCRIPTIONThe descriptions of the pins are listed in Table 3-1.
TABLE 3-1: Pin Function Table.

3.1 Logic Shutdown (SHDN)

Input to force charge termination, initiate charge, or ini-tiate recharge.

3.2 Battery Management 0V Reference (GND)

Connect to negative terminal of battery.

3.3 Charge Status Output (MODE)

Open-drain drive for connection to an LED for chargestatus indication. Alternatively, a pull-up resistor can beapplied for interfacing to a microcontroller. A lowimpedance state indicates foldback current limit or con-trolled current phase. A high impedance indicates con-stant voltage phase or battery cell disconnected.

3.4 Charge Current Monitor (IMON)

Amplified output of the voltage difference between VINand VSNS. A host microcontroller can monitor this out-put with an A/D converter.

3.5 Cell Voltage Monitor Input (VBAT)

Voltage sense input. Connect to positive terminal ofbattery. Bypass to GND with a minimum of 10 µF toensure loop stability when the battery is disconnected.A precision internal resistor divider regulates the finalvoltage on this pin to VREG.

3.6 Drive Output (VDRV)

Direct output drive of an external P-channel MOSFETpass transistor for current and voltage regulation.

3.7 Charge Current Sense Input (VSNS)

Charge current is sensed via the voltage developedacross an external precision sense resistor. The senseresistor must be placed between the supply voltage(VIN) and the source of the external pass transistor. A50 mΩ sense resistor produces a fast charge current of1 A, typically.

3.8 Battery Management Input Supply (VIN)

A supply voltage of 4.5V to 5.5V is recommended.Bypass to GND with a minimum of 10 µF.

Pin Name Description

1 SHDN Logic Shutdown

2 GND Battery Management0V Reference

3 MODE Charge Status Output

4 IMON Charge Current Monitor

5 VBAT Cell Voltage Monitor Input

6 VDRV Drive Output

7 VSNS Charge Current Sense Input

8 VIN Battery ManagementInput Supply


MCP73827
4.0 DEVICE OVERVIEWThe MCP73827 is a linear charge management con-troller. Refer to the functional block diagram on page 2and the typical application circuit, Figure 6-1.
4.1 Charge Qualification and Preconditioning

Upon insertion of a battery or application of an externalsupply, the MCP73827 verifies the state of the SHDNpin. The SHDN pin must be above the logic High level.If the SHDN pin is above the logic High level, theMCP73827 initiates a charge cycle. The charge statusoutput, MODE, is pulled low throughout throughout thepreconditioning and controlled current phases (seeTable 5-1 for charge status outputs). If the cell is belowthe preconditioning threshold, 2.4V typically, theMCP73827 preconditions the cell with a scaled backcurrent. The preconditioning current is set to approxi-mately 43% of the fast charge peak current. The pre-conditioning safely replenishes deeply depleted cellsand minimizes heat dissipation in the external passtransistor during the initial charge cycle.

4.2 Controlled Current Regulation - Fast Charge

Preconditioning ends and fast charging begins whenthe cell voltage exceeds the preconditioning threshold.Fast charge utilizes a foldback current scheme basedon the voltage at the VSNS input developed by the dropacross an external sense resistor, RSENSE, and the out-put voltage, VBAT. Fast charge continues until the cellvoltage reaches the regulation voltage, VREG.

4.3 Constant Voltage Regulation

When the cell voltage reaches the regulation voltage,VREG, constant voltage regulation begins. TheMCP73827 monitors the cell voltage at the VBAT pin.This input is tied directly to the positive terminal of thebattery. The MCP73827 is offered in two fixed-voltageversions for battery packs with either coke or graphiteanodes: 4.1V (MCP73827-4.1) and 4.2V(MCP73827-4.2).

4.4 Charge Cycle Completion

The charge cycle can be terminated by a host micro-controller when the output of the charge current moni-tor, IMON, has diminished below approximately 10% ofthe peak output voltage level. Alternatively, the transi-tion of the charge status output, MODE, can be used toinitialize a timer to terminate the charge. The charge isterminated by pulling the shutdown pin, SHDN, to alogic Low Level.


MCP73827
5.0 DETAILED DESCRIPTIONRefer to the typical application circuit, Figure 6-1.
5.1 Analog Circuitry

5.1.1 CHARGE CURRENT MONITOR (IMON)

The IMON pin provides an output voltage that is propor-tional to the battery charging current. It is an amplifiedversion of the sense resistor voltage drop that the cur-rent loop uses to control the external P-channel passtransistor. This voltage signal can be applied to theinput of an A/D Converter and used by a host microcon-troller to display information about the state of the bat-tery or charge current profile.

5.1.2 CELL VOLTAGE MONITORED INPUT (VBAT)

The MCP73827 monitors the cell voltage at the VBATpin. This input is tied directly to the positive terminal ofthe battery. The MCP73827 is offered in two fixed-volt-age versions for single cells with either coke or graphiteanodes: 4.1V (MCP73827-4.1) and 4.2V(MCP73827-4.2).

5.1.3 GATE DRIVE OUTPUT (VDRV)

The MCP73827 controls the gate drive to an externalP-channel MOSFET, Q1. The P-channel MOSFET iscontrolled in the linear region, regulating current andvoltage supplied to the cell. The drive output is auto-matically turned off when the input supply falls belowthe voltage sensed on the VBAT input.

5.1.4 CURRENT SENSE INPUT (VSNS)

Fast charge current regulation is maintained by thevoltage drop developed across an external sense resis-tor, RSENSE, applied to the VSNS input pin. The follow-ing formula calculates the value for RSENSE:

Where:VCS is the current limit threshold

IOUT is the desired peak fast charge current inamps. The preconditioning current is scaled toapproximately 43% of IPEAK.

5.1.5 SUPPLY VOLTAGE (VIN)

The VIN input is the input supply to the MCP73827. TheMCP73827 automatically enters a power-down mode ifthe voltage on the VIN input falls below the voltage onthe VBAT pin. This feature prevents draining the batterypack when the VIN supply is not present.

5.2 Digital Circuitry

5.2.1 SHUTDOWN INPUT (SHDN)

The shutdown input pin, SHDN, can be used to termi-nate a charge anytime during the charge cycle, initiatea charge cycle, or initiate a recharge cycle.

Applying a logic High input signal to the SHDN pin, ortying it to the input source, enables the device. Apply-ing a logic Low input signal disables the device and ter-minates a charge cycle. In shutdown mode, thedevice’s supply current is reduced to 0.5 µA, typically.

5.2.2 CHARGE STATUS OUTPUT (MODE)

A charge status output, MODE, provides information onthe state of charge. The open drain output can be usedto illuminate an external LED. Optionally, a pull-upresistor can be used on the output for communicationwith a microcontroller. Table 5-1 summarizes the stateof the charge status output during a charge cycle.

TABLE 5-1: Charge Status Output.

RSENSEVCSIOUT------------=

Charge Cycle State Mode

Qualification OFFPreconditioning ONControlled Current Fast Charge ONConstant Voltage OFFDisabled - Sleep mode OFFBattery Disconnected OFF


MCP73827
6.0 APPLICATIONSThe MCP73827 is designed to operate in conjunctionwith a host microcontroller or in stand-alone applica-tions. The MCP73827 provides the preferred chargealgorithm for Lithium-Ion cells, controlled current fol-
lowed by constant voltage. Figure 6-1 depicts a typicalstand-alone application circuit and Figure 6-2 depictsthe accompanying charge profile.

FIGURE 6-1: Typical Application Circuit.

FIGURE 6-2: Typical Charge Profile.

VOLTAGE REGULATED WALL CUBE

PACK+

PACK-

+

-

RSENSE

GND

VDRV

VSNS

VIN

VBAT

SHDN1

2

3

4

8

7MCP73827

5

6MODE

IMON

SINGLE CELLLITHIUM-ION

22 kΩ10 µF

100 kΩ

MA2Q705

100 mΩ

NDS8434

10 µF

BATTERY PACK

Q1IOUT

332 Ω

REGULATION VOLTAGE (VREG)

REGULATION CURRENT (IOUT(PEAK))

TRANSITION THRESHOLD

PRECONDITION CURRENT

CHARGE CURRENT

CHARGE VOLTAGE

PRECONDITIONINGPHASE

CONTROLLED CURRENTPHASE

CONSTANT VOLTAGE PHASE

MODE - CHARGE STATUS OUTPUT

IMON - CHARGE CURRENT MONITOR

0V

1.5V

0V

5V


MCP73827
6.1 Application Circuit Design
Due to the low efficiency of linear charging, the mostimportant factors are thermal design and cost, whichare a direct function of the input voltage, output currentand thermal impedance between the external P-chan-nel pass transistor, Q1, and the ambient cooling air.The worst-case situation is when the output is shorted.In this situation, the P-channel pass transistor has todissipate the maximum power. A trade-off must bemade between the charge current, cost and thermalrequirements of the charger.

6.1.1 COMPONENT SELECTION

Selection of the external components in Figure 6-1 iscrucial to the integrity and reliability of the charging sys-tem. The following discussion is intended as a guide forthe component selection process.

6.1.1.1 SENSE RESISTOR

The preferred fast charge current for Lithium-Ion cellsis at the 1C rate with an absolute maximum current atthe 2C rate. For example, a 500 mAH battery pack hasa preferred fast charge current of 500 mA. Charging atthis rate provides the shortest charge cycle times with-out degradation to the battery pack performance or life.

The current sense resistor, RSENSE, is calculated by:

Where:

VCS is the current limit threshold voltageIOUT is the desired fast charge current

For the 500 mAH battery pack example, a standardvalue 100 mΩ, 1% resistor provides a typical peak fastcharge current of 530 mA and a maximum peak fastcharge current of 758 mA. Worst case power dissipa-tion in the sense resistor is:

A Panasonic ERJ-L1WKF100U 100 mΩ, 1%, 1 Wresistor is more than sufficient for this application.A larger value sense resistor will decrease the peakfast charge current and power dissipation in both thesense resistor and external pass transistor, but willincrease charge cycle times. Design trade-offs must beconsidered to minimize space while maintaining thedesired performance.

6.1.1.2 EXTERNAL PASS TRANSISTOR

The external P-channel MOSFET is determined by thegate to source threshold voltage, input voltage, outputvoltage, and peak fast charge current. The selected P-channel MOSFET must satisfy the thermal and electri-cal design requirements.

Thermal Considerations

The worst case power dissipation in the external passtransistor occurs when the input voltage is at the maxi-mum and the output is shorted. In this case, the powerdissipation is:

Where:VINMAX is the maximum input voltage

IOUT is the maximum peak fast charge currentK is the foldback current scale factor.

Power dissipation with a 5V, +/-10% input voltagesource, 100 mΩ, 1% sense resistor, and a scale factorof 0.43 is:

Utilizing a Fairchild NDS8434 or an International Recti-fier IRF7404 mounted on a 1in2 pad of 2 oz. copper, thejunction temperature rise is 90°C, approximately. Thiswould allow for a maximum operating ambient temper-ature of 60°C.By increasing the size of the copper pad, a higherambient temperature can be realized or a lower valuesense resistor could be utilized.Alternatively, different package options can be utilizedfor more or less power dissipation. Again, design trade-offs should be considered to minimize size while main-taining the desired performance.

Electrical ConsiderationsThe gate to source threshold voltage and RDSON of theexternal P-channel MOSFET must be considered in thedesign phase. The worst case, VGS provided by the controller occurswhen the input voltage is at the minimum and thecharge current is at the maximum. The worst case, VGSis:

Where:VDRVMAX is the maximum sink voltage at the VDRVoutput

RSENSEVCSIOUT------------=

PowerDissipation 100mΩ 758mA2× 57.5mW= =

PowerDissipation VINMAX IOUT K××=

PowerDissipation 5.5V 758mA× 0.43× 1.8W= =

VGS VDRVMAX VINMIN IOUT RSENSE× )–(–=


MCP73827
VINMIN is the minimum input voltage sourceIOUT is the maximum peak fast charge current
RSENSE is the sense resistorWorst case, VGS with a 5V, +/-10% input voltagesource, 100 mΩ, 1% sense resistor, and a maximumsink voltage of 1.6V is:

At this worst case VGS, the RDSON of the MOSFETmust be low enough as to not impede the performanceof the charging system. The maximum allowableRDSON at the worst case VGS is:

The Fairchild NDS8434 and International RectifierIRF7404 both satisfy these requirements.

6.1.1.3 EXTERNAL CAPACITORS

The MCP73827 is stable with or without a battery load.In order to maintain good AC stability in the constantvoltage mode, a minimum capacitance of 10 µF is rec-ommended to bypass the VBAT pin to GND. This capac-itance provides compensation when there is no batteryload. In addition, the battery and interconnectionsappear inductive at high frequencies. These elementsare in the control feedback loop during constant voltagemode. Therefore, the bypass capacitance may be nec-essary to compensate for the inductive nature of thebattery pack.Virtually any good quality output filter capacitor can beused, independent of the capacitor’s minimum ESR(Effective Series Resistance) value. The actual value ofthe capacitor and its associated ESR depends on theforward trans conductance, gm, and capacitance of theexternal pass transistor. A 10 µF tantalum or aluminumelectrolytic capacitor at the output is usually sufficientto ensure stability for up to a 1 A output current.

6.1.1.4 REVERSE BLOCKING PROTECTION

The optional reverse blocking protection diodedepicted in Figure 6-1 provides protection from afaulted or shorted input or from a reversed polarity inputsource. Without the protection diode, a faulted orshorted input would discharge the battery pack throughthe body diode of the external pass transistor.

If a reverse protection diode is incorporated in thedesign, it should be chosen to handle the peak fastcharge current continuously at the maximum ambienttemperature. In addition, the reverse leakage current ofthe diode should be kept as small as possible.

6.1.1.5 SHUTDOWN INTERFACE

In the stand-alone configuration, the shutdown pin isgenerally tied to the input voltage. The MCP73827 willautomatically enter a low power mode when the inputvoltage is less than the output voltage reducing the bat-tery drain current to 8 µA, typically.By connecting the shutdown pin as depicted inFigure 6-1, the battery drain current may be furtherreduced. In this application, the battery drain currentbecomes a function of the reverse leakage current ofthe reverse protection diode.

6.1.1.6 CHARGE STATUS INTERFACE

The charge status indicator, MODE, can be utilized toilluminate an LED when the MCP73827 is in the con-trolled current phase. When the MCP73827 transitionsto constant voltage mode, the MODE pin will transitionto a high impedance state. A current limit resistorshould be used in series with the LED to establish anominal LED bias current of 10 mA. The maximumallowable sink current of the MODE pin is 30 mA.

6.2 PCB Layout Issues

For optimum voltage regulation, place the battery packas close as possible to the device’s VBAT and GNDpins. It is recommended to minimize voltage dropsalong the high current carrying PCB traces.

If the PCB layout is used as a heatsink, adding manyvias around the external pass transistor can help con-duct more heat to the back-plane of the PCB, thusreducing the maximum junction temperature.

VGS 1.6V 4.5V 758mA 99mΩ×–( )– 2.8– V= =

RDSONVINMIN IPEAK RSENSE×– VBATMAX–

IOUT----------------------------------------------------------------------------------------------=

RDSON4.5V 758mA 99mΩ×– 4.242V–

758mA-------------------------------------------------------------------------------- 242mΩ= =


MCP73827
7.0 PACKAGING INFORMATION7.1 Package Marking Information
8-Lead MSOP Example:

XXXXXX

YWWNNN

738271

YWWNNN

Part Number Code

MCP73827-4.1VUA 738271MCP73827-4.2VUA 738272

Legend: XX...X Part Number code + temperature range + voltage (two letter code)*Y Year code (last 2 digits of calendar year)WW Week code (week of January 1 is week ‘01’)NNN Alphanumeric traceability code

Note: In the event the full Microchip part number cannot be marked on one line, it willbe carried over to the next line thus limiting the number of available characters for cus-tomer specific information.

* Standard OTP marking consists of Microchip part number, year code, week code, and traceability code.


MCP73827
8-Lead Plastic Micro Small Outline Package (MSOP)
D

L

c

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not

.037.035FFootprint (Reference)

exceed .010" (0.254mm) per side.

Notes:

Drawing No. C04-111

*Controlling Parameter

Mold Draft Angle TopMold Draft Angle Bottom

Foot Angle

Lead WidthLead Thickness

βα

cB

φ

77

.004

.010

0.006.012

(F)

β

Dimension Limits

Overall HeightMolded Package Thickness

Molded Package WidthOverall LengthFoot Length

Standoff §Overall Width

Number of PinsPitch

A

L

E1D

A1E

A2

.016

.114

.114.022

.118

.118

.002

.030

.193

.034

MIN

pn

Units

.026

NOM8

INCHES

1.000.950.90.039

0.150.30

.008

.016

60.100.25

0

77

0.200.40

6

MILLIMETERS*

0.65

0.86

3.003.000.55

4.90

.044

.122

.028

.122

.038

.006

0.40

2.902.90

0.050.76

MINMAX NOM

1.18

0.70

3.103.10

0.150.97

MAX8

α

E1

E

Bn 1

2

φ

§ Significant Characteristic

.184 .200 4.67 .5.08


MCP73827
NOTES:

MCP73827

ON-LINE SUPPORTMicrochip provides on-line support on the MicrochipWorld Wide Web (WWW) site.

The web site is used by Microchip as a means to makefiles and information easily available to customers. Toview the site, the user must have access to the Internetand a web browser, such as Netscape or MicrosoftExplorer. Files are also available for FTP downloadfrom our FTP site.

Connecting to the Microchip Internet Web Site The Microchip web site is available by using yourfavorite Internet browser to attach to:

www.microchip.comThe file transfer site is available by using an FTP ser-vice to connect to:

ftp://ftp.microchip.comThe web site and file transfer site provide a variety ofservices. Users may download files for the latestDevelopment Tools, Data Sheets, Application Notes,User's Guides, Articles and Sample Programs. A vari-ety of Microchip specific business information is alsoavailable, including listings of Microchip sales offices,distributors and factory representatives. Other dataavailable for consideration is:

• Latest Microchip Press Releases• Technical Support Section with Frequently Asked

Questions • Design Tips• Device Errata• Job Postings• Microchip Consultant Program Member Listing• Links to other useful web sites related to

Microchip Products• Conferences for products, Development Systems,

technical information and more• Listing of seminars and events

2002 Microchip Technology Inc.

Systems Information and Upgrade Hot Line The Systems Information and Upgrade Line providessystem users a listing of the latest versions of all ofMicrochip's development systems software products.Plus, this line provides information on how customerscan receive any currently available upgrade kits.TheHot Line Numbers are: 1-800-755-2345 for U.S. and most of Canada, and

1-480-792-7302 for the rest of the world.013001

DS21704A-page 17

MCP73827
READER RESPONSEIt is our intention to provide you with the best documentation possible to ensure successful use of your Microchip prod-uct. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentationcan better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.
Please list the following information, and use this outline to provide us with your comments about this Data Sheet.

1. What are the best features of this document?

2. How does this document meet your hardware and software development needs?

3. Do you find the organization of this data sheet easy to follow? If not, why?

4. What additions to the data sheet do you think would enhance the structure and subject?

5. What deletions from the data sheet could be made without affecting the overall usefulness?

6. Is there any incorrect or misleading information (what and where)?

7. How would you improve this document?

8. How would you improve our software, systems, and silicon products?

To: Technical Publications Manager

RE: Reader ResponseTotal Pages Sent

From: Name

CompanyAddressCity / State / ZIP / Country

Telephone: (_______) _________ - _________Application (optional):

Would you like a reply? Y N

Device: Literature Number:

Questions:

FAX: (______) _________ - _________

DS21704AMCP73827


MCP73827
PRODUCT IDENTIFICATION SYSTEMTo order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Sales and SupportData SheetsProducts supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-72773. The Microchip Worldwide Site (www.microchip.com)

Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

New Customer Notification SystemRegister on our web site (www.microchip.com/cn) to receive the most current information on our products.

PART NO. -X.X XX

PackageOutputVoltage

Device

Device: MCP73827: Linear Charge Management Controller

Output Voltage: 4.1 = 4.1V4.2 = 4.2V

Temperature Range: V = -20°C to +85°C

Package: UA = Plastic Micro Small Outline (MSOP), 8-lead

Examples:a) MCP73827-4.1VUA: Linear Charge Man-

agement Controller, 4.1Vb) MCP73827-4.2VUA: Linear Charge Man-

agement Controller, 4.2Vc) MCP73827-4.2VUATR: Linear Charge Man-

agement Controller, 4.2V, in tape and reel

X

TemperatureRange

2002 Microchip Technology Inc. DS21704A-page19

MCP73827
NOTES:

MCP73827
NOTES:
2002 Microchip Technology Inc. DS21704A-page21

MCP73827
NOTES:

Information contained in this publication regarding deviceapplications and the like is intended through suggestion onlyand may be superseded by updates. It is your responsibility toensure that your application meets with your specifications.No representation or warranty is given and no liability isassumed by Microchip Technology Incorporated with respectto the accuracy or use of such information, or infringement ofpatents or other intellectual property rights arising from suchuse or otherwise. Use of Microchip’s products as critical com-ponents in life support systems is not authorized except withexpress written approval by Microchip. No licenses are con-veyed, implicitly or otherwise, under any intellectual propertyrights.

2002 Microchip Technology Inc.

Trademarks

The Microchip name and logo, the Microchip logo, FilterLab,KEELOQ, MPLAB, PIC, PICmicro, PICMASTER, PICSTART,PRO MATE, SEEVAL and The Embedded Control SolutionsCompany are registered trademarks of Microchip TechnologyIncorporated in the U.S.A. and other countries.

dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,In-Circuit Serial Programming, ICSP, ICEPIC, microID,microPort, Migratable Memory, MPASM, MPLIB, MPLINK,MPSIM, MXDEV, PICC, PICDEM, PICDEM.net, rfPIC, SelectMode and Total Endurance are trademarks of MicrochipTechnology Incorporated in the U.S.A.

Serialized Quick Term Programming (SQTP) is a service markof Microchip Technology Incorporated in the U.S.A.

All other trademarks mentioned herein are property of theirrespective companies.

© 2002, Microchip Technology Incorporated, Printed in theU.S.A., All Rights Reserved.

Printed on recycled paper.

DS21704A - page 23

Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs and microperipheral products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified.


MAMERICASCorporate Office2355 West Chandler Blvd.Chandler, AZ 85224-6199Tel: 480-792-7200 Fax: 480-792-7277Technical Support: 480-792-7627Web Address: http://www.microchip.comRocky Mountain2355 West Chandler Blvd.Chandler, AZ 85224-6199Tel: 480-792-7966 Fax: 480-792-7456

Atlanta500 Sugar Mill Road, Suite 200BAtlanta, GA 30350Tel: 770-640-0034 Fax: 770-640-0307Boston2 Lan Drive, Suite 120Westford, MA 01886Tel: 978-692-3848 Fax: 978-692-3821Chicago333 Pierce Road, Suite 180Itasca, IL 60143Tel: 630-285-0071 Fax: 630-285-0075Dallas4570 Westgrove Drive, Suite 160Addison, TX 75001Tel: 972-818-7423 Fax: 972-818-2924DetroitTri-Atria Office Building 32255 Northwestern Highway, Suite 190Farmington Hills, MI 48334Tel: 248-538-2250 Fax: 248-538-2260Kokomo2767 S. Albright Road Kokomo, Indiana 46902Tel: 765-864-8360 Fax: 765-864-8387Los Angeles18201 Von Karman, Suite 1090Irvine, CA 92612Tel: 949-263-1888 Fax: 949-263-1338New York150 Motor Parkway, Suite 202Hauppauge, NY 11788Tel: 631-273-5305 Fax: 631-273-5335San JoseMicrochip Technology Inc.2107 North First Street, Suite 590San Jose, CA 95131Tel: 408-436-7950 Fax: 408-436-7955Toronto6285 Northam Drive, Suite 108Mississauga, Ontario L4V 1X5, CanadaTel: 905-673-0699 Fax: 905-673-6509

ASIA/PACIFICAustraliaMicrochip Technology Australia Pty LtdSuite 22, 41 Rawson StreetEpping 2121, NSWAustraliaTel: 61-2-9868-6733 Fax: 61-2-9868-6755China - BeijingMicrochip Technology Consulting (Shanghai)Co., Ltd., Beijing Liaison OfficeUnit 915Bei Hai Wan Tai Bldg.No. 6 Chaoyangmen Beidajie Beijing, 100027, No. ChinaTel: 86-10-85282100 Fax: 86-10-85282104China - ChengduMicrochip Technology Consulting (Shanghai)Co., Ltd., Chengdu Liaison OfficeRm. 2401, 24th Floor, Ming Xing Financial TowerNo. 88 TIDU StreetChengdu 610016, ChinaTel: 86-28-6766200 Fax: 86-28-6766599China - FuzhouMicrochip Technology Consulting (Shanghai)Co., Ltd., Fuzhou Liaison OfficeUnit 28F, World Trade PlazaNo. 71 Wusi RoadFuzhou 350001, ChinaTel: 86-591-7503506 Fax: 86-591-7503521China - ShanghaiMicrochip Technology Consulting (Shanghai)Co., Ltd.Room 701, Bldg. BFar East International PlazaNo. 317 Xian Xia RoadShanghai, 200051Tel: 86-21-6275-5700 Fax: 86-21-6275-5060China - ShenzhenMicrochip Technology Consulting (Shanghai)Co., Ltd., Shenzhen Liaison OfficeRm. 1315, 13/F, Shenzhen Kerry Centre,Renminnan LuShenzhen 518001, ChinaTel: 86-755-2350361 Fax: 86-755-2366086Hong KongMicrochip Technology Hongkong Ltd.Unit 901-6, Tower 2, Metroplaza223 Hing Fong RoadKwai Fong, N.T., Hong KongTel: 852-2401-1200 Fax: 852-2401-3431IndiaMicrochip Technology Inc.India Liaison OfficeDivyasree Chambers1 Floor, Wing A (A3/A4)No. 11, O’Shaugnessey RoadBangalore, 560 025, IndiaTel: 91-80-2290061 Fax: 91-80-2290062

JapanMicrochip Technology Japan K.K.Benex S-1 6F3-18-20, ShinyokohamaKohoku-Ku, Yokohama-shiKanagawa, 222-0033, JapanTel: 81-45-471- 6166 Fax: 81-45-471-6122KoreaMicrochip Technology Korea168-1, Youngbo Bldg. 3 FloorSamsung-Dong, Kangnam-KuSeoul, Korea 135-882Tel: 82-2-554-7200 Fax: 82-2-558-5934SingaporeMicrochip Technology Singapore Pte Ltd.200 Middle Road#07-02 Prime CentreSingapore, 188980Tel: 65-6334-8870 Fax: 65-6334-8850TaiwanMicrochip Technology Taiwan11F-3, No. 207Tung Hua North RoadTaipei, 105, TaiwanTel: 886-2-2717-7175 Fax: 886-2-2545-0139

EUROPEDenmarkMicrochip Technology Nordic ApSRegus Business CentreLautrup hoj 1-3Ballerup DK-2750 DenmarkTel: 45 4420 9895 Fax: 45 4420 9910FranceMicrochip Technology SARLParc d’Activite du Moulin de Massy43 Rue du Saule TrapuBatiment A - ler Etage91300 Massy, FranceTel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79GermanyMicrochip Technology GmbHGustav-Heinemann Ring 125D-81739 Munich, GermanyTel: 49-89-627-144 0 Fax: 49-89-627-144-44ItalyMicrochip Technology SRLCentro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 120041 Agrate BrianzaMilan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883United KingdomArizona Microchip Technology Ltd.505 Eskdale RoadWinnersh TriangleWokingham Berkshire, England RG41 5TUTel: 44 118 921 5869 Fax: 44-118 921-5820

03/01/02

*DS21704A*

WORLDWIDE SALES AND SERVICE

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