Dual 30V P-Channel PowerTrench MOSFET

SS

SSO-8

G

D1D1

D2D2

S1G1

S2G2

Pin 1

SOP-8

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

4953

V(BR)DSS RDS(on)MAX ID

-30V0.059Ω@-10. V

-5.3A0.089Ω@-4.5V

P-Channel 30- V(D-S) MOSFET4953 Dual

SOP-8L

General FEATURETrenchFET Power MOSFETLead free product is acquiredSurface mount package

APPLICATIONLoad Switch for Portable DevicesDC/DC Converter

Maximum ratings (Ta=25 unless otherwise noted)

Parameter Symbol Value Unit

Drain-Source Voltage VDS -30V

Gate-Source Voltage VGS ±20

Continuous Drain Current ID -5.3

Pulsed Drain Current IDM -20A

Maximum Power Dissipation PD 2.0 W

Thermal Resistance from Junction to Ambient(t ≤5s) R θJA /W

Junction Temperature TJ 150

Storage Temperature Tstg -55 ~+150

125

Equivalent Cir cuit

MARKING

www.sztuofeng.com Feb,2018 V1.01

4953

oTFCYWP

Y :year code W :week code

-

G1

D1

S1 G2

D2

S2

Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V

IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA

IGSSF Gate–Body Leakage, Forward VGS = –20 V, VDS = 0 V –100 nA

IGSSR Gate–Body Leakage, Reverse VGS = 20 V, VDS = 0 V 100 nA

On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.7 –3 V

RDS(on) Static Drain–Source On–Resistance

V GS = –10 V, ID = –5.3 A

V GS = –4.5 V, ID = –4.2 A

54

84

59

89 mΩ

ID(on) On–State Drain Current VGS = –10 V, VDS = –5.0 V –20 A

gFS Forward Transconductance VDS = –5 V, ID = –5 A 10 S

Dynamic Characteristics Ciss Input Capacitance 528 pF

Coss Output Capacitance 132 pF

Crss Reverse Transfer Capacitance

VDS = –15 V, V GS = 0 V, f = 1.0 MHz

70 pF

Switching Characteristics td(on) Turn–On Delay Time 7 ns

tr Turn–On Rise Time 13 ns

td(off) Turn–Off Delay Time 14 ns

tf Turn–Off Fall Time

VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω

9 ns

Qg Total Gate Charge 6.0 9 nC

Qgs Gate–Source Charge 2.2 nC

Qgd Gate–Drain Charge

VDS = –15 V, ID = –5 A, VGS = –5 V

2.0 nC

Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A

VSD Drain–Source Diode Forward Voltage V GS = 0 V, IS = –2.6 A –0.8 –1.2 V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

Dual 20V P-Channel PowerTrench MOSFET SOP-8L

www.sztuofeng.com Feb,2018 V1.02

4953

Dual 20V P-Channel PowerTrench MOSFET

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8L

www.sztuofeng.com Feb,2018 V1.03

Typical Characteristics

0

10

20

30

0 1 2 3 4 5 6

-VDS, DRAIN TO SOURCE VOLTAGE (V)

-I D, D

RA

IN C

UR

RE

NT

(A)

VGS = -10V

-3.0V

-3.5V

-4.0V

-4.5VV

-5.0VV

-6.0V

0.8

1

1.2

1.4

1.6

1.8

2

0 6 12 18 24 30

-ID, DRAIN CURRENT (A)

RD

S(O

N), N

OR

MA

LIZE

DD

RA

IN-S

OU

RC

E O

N-R

ES

ISTA

NC

E

VGS=-4.0V

-4.0V

-6.0V -7.0V

-8.0V -10V

-5.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

RD

S(O

N), N

OR

MA

LIZE

D D

RA

IN-S

OU

RC

E O

N-R

ES

ISTA

NC

E

ID = -5AVGS = -10V

0

0.05

0.1

0.15

0.2

0.25

2 4 6 8 10

-VGS, GATE TO SOURCE VOLTAGE (V)

RD

S(O

N),

ON

-RE

SIS

TAN

CE

(OH

M)

ID = -2.5A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation with Temperature.

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

0

3

6

9

12

15

1 1.5 2 2.5 3 3.5 4 4.5

-VGS, GATE TO SOURCE VOLTAGE (V)

-I D, D

RA

IN C

UR

RE

NT

(A)

TA = -55oC25oC

125oC

VDS = -5V

0.0001

0.001

0.01

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

-IS, R

EV

ER

SE

DR

AIN

CU

RR

EN

T (

A) VGS =0V

TA = 125oC

25oC

-55 oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

4953

Dual 20V P-Channel PowerTrench MOSFET

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8L

www.sztuofeng.com Feb,2018 V1.04

Typical Characteristics

0

2

4

6

8

10

0 2 4 6 8 10

Qg, GATE CHARGE (nC)

-VG

S, G

ATE

-SO

UR

CE

VO

LTA

GE

(V)

ID = -5AVDS = -5V -10V

-15V

0

100

200

300

400

500

600

700

800

0 5 10 15 20 25 30

-V DS, DRAIN TO SOURCE VOLTAGE (V)

CA

PA

CIT

AN

CE

(pF) CISS

COSS

CRSS

f = 1 MHzVGS = 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1 1 10 100

-VDS, DRAIN-SOURCE VOLTAGE (V)

-ID, D

RA

IN C

UR

RE

NT

(A)

DC

10s1s

100ms

100µ sRDS(ON) LIMIT

VGS = -10VSINGLE PULSERθJA = 135 oC/W

TA = 25oC

10ms1ms

0

10

20

30

40

50

0.001 0.01 0.1 1 10 100

t1, TIME (sec)

P(p

k), P

EA

K T

RA

NS

IEN

T P

OW

ER

(W

) SINGLE PULSERθJA = 135°C/W

TA = 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

r(t),

NO

RM

ALI

ZED

EFF

ECTI

VE

TRA

NSI

ENT

THER

MA

L R

ESIS

TAN

CE

RθJA(t) = r(t) + RθJA

RθJA = 135 °C/W

TJ - TA = P * RθJA(t)Duty Cycle, D = t1 / t2

P(pk)

t1t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

4953

Dual 20V P-Channel PowerTrench MOSFET

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOP-8L

www.sztuofeng.com Feb,2018 V1.0

SOP8 Package Outline Dimensions

SOP8 Suggested Pad Layout

Min Max Min MaxA

A1 0.100 0.250 0.004 0.010A2 1.350 1.550 0.053 0.061b 0.330 0.510 0.013 0.020c 0.170 0.250 0.007 0.010D 4.800 5.000 0.189 0.197eE 5.800 6.200 0.228 0.244

E1 3.800 4.000 0.150 0.157L 0.400 1.270 0.016 0.050

θ 0° 8° 0° 8°

SymbolDimensions In Millimeters Dimensions In Inches

0.050（BSC）1.270（BSC）

1.350 1.750 0.053 0.069

5

4953