PTP2 N80 · 2019. 2. 15. · PTP2 N80 800V N-Channel MOSFET Features Low Intrinsic Capacitances...

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N80 Units 2 PTP2 N80 800V N-Channel MOSFET Features Low Intrinsic Capacitances Excellent Switching Characteristics TO220 GGate,DDrain,SSourse Extended Safe Operating Area Unrivalled Gate Charge :Qg= 13nC (Typ.) BVDSS=800V,ID=3A R DS(on) : 5 (Max) @VG=10V 100% Avalanche Tested Absolute Maximum Ratings Tc=25unless other wise noted Symbol Parameter V DSS Drain-Sourse Voltage 800 V I D Drain Current -continuous (Tc=25) 3 A -continuous (Tc=100) 1.9 A V GS Gate-Sourse Voltage ±30 V E AS Single Plused Avanche Energy (Note1) 320 mJ I AR Avalanche Current (Note2) 3 A P D Power Dissipation (Tc=25) 107 W T J ,T STG Operating and Storage Temperature Range -55 ~ +150 TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds 300 Thermal Characteristics Symbol Parameter Typ. Max Units R θJC Thermal Resistance,Junction to Case -- 1.17 /W R θCS Thermal Resistance,Case to Sink 0.5 -- /W R θJA Thermal Resistance,Junction to Ambient -- 62.5 /W G S D ! ! ! ! ! ! S D G 1 - 2012-7-8 -

Transcript of PTP2 N80 · 2019. 2. 15. · PTP2 N80 800V N-Channel MOSFET Features Low Intrinsic Capacitances...

Page 1: PTP2 N80 · 2019. 2. 15. · PTP2 N80 800V N-Channel MOSFET Features Low Intrinsic Capacitances Excellent Switching Characteristics TO‐220 G‐Gate,D‐Drain,S‐Sourse Extended

N80 Units 2

PTP2 N80

800V N-Channel MOSFET

Features

Low Intrinsic Capacitances

Excellent Switching Characteristics

TO‐220

G‐Gate,D‐Drain,S‐Sourse

Extended Safe Operating Area

Unrivalled Gate Charge :Qg= 13nC (Typ.)

BVDSS=800V,ID=3A

RDS(on) : 5 Ω (Max) @VG=10V

100% Avalanche Tested

Absolute Maximum Ratings

Tc=25 unless other wise noted

Symbol Parameter

VDSS Drain-Sourse Voltage 800 V

ID

Drain Current -continuous (Tc=25) 3 A -continuous (Tc=100) 1.9 A

VGS Gate-Sourse Voltage ±30 V EAS Single Plused Avanche Energy (Note1) 320 mJ IAR Avalanche Current (Note2) 3 A PD

Power Dissipation (Tc=25) 107 W TJ,TSTG Operating and Storage Temperature Range -55 ~ +150

TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds

300

Thermal Characteristics Symbol Parameter Typ. Max Units

RθJC Thermal Resistance,Junction to Case -- 1.17 /W

RθCS Thermal Resistance,Case to Sink 0.5 -- /W

RθJA Thermal Resistance,Junction to Ambient -- 62.5 /W

G SD

!!!!

!!!!

!!!!

!!!!

!!!!

!!!!

S

D

G

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HIGH VOLTAGE N-Channel MOSFET

Electrical Characteristics Tc=25 unless other wise noted

Symbol Parameter Test Condition Min. Typ. Max Units

Off Characteristics BVDSS Drain-Sourse Breakdown Voltage ID=250μA,VGS=0 800 -- -- V

BVDSS/TJ

Breakdown Voltage Temperature Conficient

ID=250μA,Reference to 25

-- 0.9 -- V/

IDSS Zero Gate Voltage Drain Current Vds=800V, Vgs=0V -- -- 10 μA Vds=640V, Tc=125 100 μA

IGSSF Gate-body leakage Current, Forward

Vgs=+30V, Vds=0V -- -- 100 nA

IGSSR Gate-body leakage Current, Reverse

Vgs=-30V, Vds=0V -- -- -100 nA

On Characteristics VGS(th) Date Threshold Voltage Id=250uA,Vds=Vgs 3 -- 5 V

RDS(on) Static Drain-Sourse On-Resistance

Id=1.5A,Vgs=10V -- -- 5 Ω

Dynamic Characteristics Ciss Input Capacitance

VDS=25V,VGS=0, f=1.0MHz

-- 530 690 pF Coss Output Capacitance -- 57 75 pF Crss Reverse Transfer Capacitance -- 7 9 pF

Switching Characteristics Td(on) Turn-On Delay Time

VDD=400V,ID=3A RG=25Ω (Note 3,4)

-- 15 40 nS Tr Turn-On Rise Time -- 40 90 nS

Td(off) Turn-Off Delay Time -- 30 70 nS Tf Turn-Off Fall Time -- 30 70 nS Qg Total Gate Charge

VDS=640,VGS=10V, ID=3A (Note 3,4)

-- 15 19 nC Qgs Gate-Sourse Charge -- 3.5 -- nC Qgd Gate-Drain Charge 7.7 -- nC

Drain-Sourse Diode Characteristics and Maximum Ratings IS Maximun Continuous Drain-Sourse Diode Forward Current -- -- 3 A

ISM Maximun Plused Drain-Sourse DiodeForwad Current -- -- 12 A

VSD Drain-Sourse Diode Forward Voltage

Id=3A -- -- 1.4 V

trr Reverse Recovery Time IS=3A,VGS =0V diF/dt=100A/μs (Note3)

-- 180 -- nS Qrr Reverse Recovery Charge -- 0.72 -- μC

*Notes 1, L=66.7mH, IAS=3.0A, VDD=50V, RG=25Ω, Starting TJ =25°C

2, Repetitive Rating : Pulse width limited by maximum junction temperature

3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%

4, Essentially Independent of Operating Temperature

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HIGH VOLTAGE N-Channel MOSFET

Typical Characteristics

0 3 6 9 12 150

2

4

6

8

10

12

VDS = 400V

VDS = 160V

VDS = 640V

※ Note : ID = 3A

V GS, G

ate-

Sour

ce V

oltag

e [V]

QG, Total Gate Charge [nC]

0.2 0.4 0.6 0.8 1.0 1.2 1.410-1

100

101

150※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test

25

I DR

, Rev

erse

Dra

in Cu

rrent

[A]

VSD, Source-Drain voltage [V]0 2 4 6 8

2

4

6

8

10

VGS = 20V

VGS = 10V

※ Note : TJ = 25

RDS

(ON)

[Ω],

Drain

-Sou

rce

On-R

esist

ance

ID, Drain Current [A]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vsDrain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation with Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

10-1 100 10110-2

10-1

100

101

VGSTop : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 VBottom : 5.5 V

※ Notes : 1. 250μ s Pulse Test 2. TC = 25

I D, D

rain

Curre

nt [A

]

VDS, Drain-Source Voltage [V]

4 6 8 1010-1

100

101

150oC

25oC-55oC

※ Notes : 1. VDS = 50V 2. 250μ s Pulse Test

I D, D

rain

Curre

nt [A

]

VGS, Gate-Source Voltage [V]

10-1 100 1010

200

400

600

800Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd

※ Notes : 1. VGS = 0 V 2. f = 1 MHz

Crss

Coss

Ciss

Capa

citan

ce [p

F]

VDS, Drain-Source Voltage [V]

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HIGH VOLTAGE N-Channel MOSFET

Typical Characteristics (Continued)

Figure 9-1. Maximum Safe Operating Areafor WGP3N80

Figure 10. Maximum Drain Currentvs Case Temperature

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

※ Notes : 1. VGS = 0 V 2. ID = 250 μA

BVDS

S, (N

orma

lized

)Dr

ain-S

ource

Bre

akdo

wn V

oltag

e

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes : 1. VGS = 10 V 2. ID = 1.5 A

R DS(

ON), (

Norm

alize

d)Dr

ain-S

ource

On-

Resis

tance

TJ, Junction Temperature [oC]

100 101 102 10310-2

10-1

100

101

100 ms

DC

10 ms1 ms

100 µs

Operation in This Area is Limited by R DS(on)

※ Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse

I D, D

rain

Curre

nt [A

]

VDS, Drain-Source Voltage [V]

25 50 75 100 125 1500

1

2

3

4

I D,

Dra

in Cu

rrent

[A]

TC, Case Temperature []

Figure 7. Breakdown Voltage Variationvs Temperature

Figure 8. On-Resistance Variationvs Temperature

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1

1 0 -2

1 0 -1

1 0 0

※ N o tes : 1 . Z

θ JC( t) = 1 .1 7 /W M a x . 2 . D u ty F a c to r, D = t1/t2 3 . T JM - T C = P D M * Z

θ JC ( t)

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

Z θJC(t

), T

he

rma

l Re

spo

nse

t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-1. Transient Thermal Response Curve for WGP3N80

t1

PDM

t2

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HIGH VOLTAGE N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

Same Typeas DUT

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

Same Typeas DUT

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

VDSRL

DUT

RG

VGS

EAS = L IAS2----

21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

DUT

RG

L

I D

t p

EAS = L IAS2----

21EAS = L IAS

2----21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

DUT

RG

LL

I DI D

t p

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HIGH VOLTAGE N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------D =Gate Pulse WidthGate Pulse Period

--------------------------

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HIGH VOLTAGE N-Channel MOSFET

Package Dimension

4.50 ±0.209.90 ±0.20

1.52 ±0.10

0.80 ±0.102.40 ±0.20

10.00 ±0.20

1.27 ±0.10

ø3.60 ±0.10

(8.70)

2.80

±0.

1015

.90

±0.2

0

10.0

8 ±0

.30

18.9

5MA

X.

(1.7

0)

(3.7

0)(3

.00)

(1.4

6)

(1.0

0)

(45°)

9.20

±0.

2013

.08

±0.2

0

1.30

±0.

10

1.30+0.10–0.05

0.50+0.10–0.05

2.54TYP[2.54 ±0.20]

2.54TYP[2.54 ±0.20]

TO-220

Dimensions in Millimeters

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