Prinsipp for transistor i D = (15 V)/(1000 Ω) =15 mA i D = (0 V)/(1000 Ω) = 0 ”load line”
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Transcript of Prinsipp for transistor i D = (15 V)/(1000 Ω) =15 mA i D = (0 V)/(1000 Ω) = 0 ”load line”
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Prinsipp for transistor
iD = (15 V)/(1000 Ω) =15 mA
iD = (0 V)/(1000 Ω) = 0
”load line”
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JFET (Junction Field Effect Transistor)
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x x+dx
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JFET (Junction Field Effect Transistor)
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Figure 6.7
MESFET (Metal Semiconductor Field Effect Transistor)
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MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
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MOSFET
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Ulike typer av MOSFET
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Likevekt
Ansamling av hull
Deplesjon av hull
Ansamling av elektroner
V=0 V>0
V<0 V>>0
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Qm = | Qd + Qn |
V = VG = Vi + Φs
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Figure 6.17 Figure 6.18
Terskelspenning VT i virkeligheten; m s
m < s
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VT i virkeligheten; ladninger i gate-oksiden
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MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
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Ei∞
qΦ(x) = Ei∞ - Ei(x)
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MOSFET
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VT i virkeligheten
Figure 6.20Influence of materials parameters on threshold voltage.
(a) the threshold voltage equation indicating signs of the four contributions.
(b) variation of VT with substrate doping for n-channel and p-channel n+ poly-SiO2-Si devices.
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VT år 1990 vs 2009
2009
n+ poly-SiO2-Si devicesAl-SiO2-Si devices
19901990
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C-V for n-kanale MOS-kapasitanse
(~100 Hz)
(~106 Hz)
Figure 6.16: Capacitance-voltage relation for a n-channel (p-substrate) MOS capacitor. The
dashed curve for V > VT occurs for high measurement frequencies.
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y(x)
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Påvirken av elektriskt felt (Ex og Ey) på kanalmobilitet
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y(x)
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Sammenlikning av likning 6:49 og 6:50
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
N-MOSFETL = 1 µmZ = 10 µmd(SiO2) = 10 nm
Na = 1x1015 cm-3
VT = 0.54 V
Eq. (6:49)
Eq. (6:50)
VD (Volt)
VG = 2 V
VG = 3 V
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’Typical feature size’ vs tid for Si-DRAM (Moore’s lov)
Figure 9.3