STB80NF55-08 STP80NF55-08 - STW80NF55-08N-channel 55 V - 0.0065 - 80 A - TO-220 - D2PAK - TO-247 STripFET Power MOSFETFeaturesType STB80NF55-08 STP80NF55-08 STW80NF55-08

VDSS 55 V 55 V 55 V

RDS(on) max < 0.008 < 0.008 < 0.008

ID 80 A 80 A 80 A TO-2471 2 3

TO-220

Standard threshold drive3 1

Application

Switching applications

DPAK

DescriptionThis Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram

Table 1.

Device summaryOrder codes Marking B80NF55-08 P80NF55-08 W80NF55-08 Package DPAK TO-220 TO-247 Packaging Tape & reel Tube Tube

STB80NF55-08 STP80NF55-08 STW80NF55-08

March 2008

Rev 1

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Contents

STP80NF55-08 - STB80NF55-08 - STW80NF55-08

Contents1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) ............................. 6

3 4 5 6

Test circuit

................................................ 8

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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Electrical ratings

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Electrical ratingsTable 2.Symbol VDS VGS ID(1)

Absolute maximum ratingsParameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuos) at TC = 25 C Drain current (continuos) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 55 20 80 80 320 300 2 -55 to 175 Unit V V A A A W W/C C

ID (1) IDM(2)

PTOT

Tj Tstg

Operating junction temperature Storage temperature

1. Current limited package 2. Pulse width limited by safe operating area

Table 3.Symbol Rthj-case Rthj-amb Tl

Thermal resistanceValue Parameter D2PAK Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 35(1) 300 TO-220 0.5 62.5 50 TO-247 C/W C/W C Unit

1. When mounted on 1 inch2 FR-4 board, 2 oz Cu

Table 4.Symbol IAR EAS

Avalanche characteristicsParameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 30 V) Max value 40 1000 Unit A mJ

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Electrical characteristics

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Electrical characteristics(TCASE = 25 C unless otherwise specified) Table 5.Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)

On/off statesParameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = max rating VDS = max rating@125 C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 40 A 2 3 Min. 55 1 10 100 4 Typ. Max. Unit V A A nA V

0.0065 0.008

Table 6.Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd

DynamicParameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =15 V , ID = 18 A VDS = 25 V, f = 1 MHz, VGS= 0 VDD= 27 V, ID = 80 A VGS =10 V (see Figure 14) Min. Typ. 40 3740 830 265 112 20 40 155 Max. Unit S pF pF pF nC nC nC

1. Pulsed: pulse duration=300s, duty cycle 1.5%

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Electrical characteristics

Table 7.Symbol td(on) tr td(off) tf

Switching timesParameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 27 V, ID = 40 A RG = 4.7 VGS = 10 V (see Figure 13) Min. Typ. 20 110 75 35 Max. Unit ns ns ns ns

Table 8.Symbol ISD ISDM (1) VSD trr(2) Qrr IRRM

Source drain diodeParameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, VGS = 0 ISD = 80 A,VDD = 25 V di/dt=100 A/s, Tj =150 C (see Figure 18) 80 230 5.7 Test conditions Min Typ. Max 80 320 1.5 Unit A A V ns nC A

1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5%

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Electrical characteristics

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2.1Figure 2.

Electrical characteristics (curves)Safe operating area Figure 3. Thermal impedance

Figure 4.

Output characteristics

Figure 5.

Transfer characteristics

Figure 6.

Normalized BVDSS vs temperature

Figure 7.

Static drain-source on resistance

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STP80NF55-08 - STB80NF55-08 - STW80NF55-08 Figure 8. Gate charge vs gate-source voltage Figure 9.

Electrical characteristics Capacitance variations

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized on resistance vs temperature

Figure 12. Source-drain diode forward characteristics

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Test circuit

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3

Test circuitFigure 14. Gate charge test circuit

Figure 13. Switching times test circuit for resistive load

Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit

Figure 17. Unclamped inductive waveform

Figure 18. Switching time waveform

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Package mechanical data

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Package mechanical dataIn order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:: www.st.com

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Package mechanical data

STP80NF55-08 - STB80NF55-08 - STW80NF55-08

TO-220 mechanical data

mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6

inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116

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Package mechanical data

TO-247 Mechanical datamm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75

Dim. A A1 b b1 b2 c D E e L L1 L2 P R S

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Package mechanical data

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DPAK (TO-263) mechanical data

mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334

inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8

0079457_M

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Packaging mechanical data

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Packaging mechanical dataD2PAK FOOTPRINT

TAPE AND REEL SHIPMENTREEL MECHANICAL DATADIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992

TAPE MECHANICAL DATADIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956

BASE QTY 1000

* on sales type

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Revision history

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Revision historyTable 9.Date 03-Mar-2008

Document revision historyRevision 1 First release Changes

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