N-Channel QFET MOSFET N- Description semiconductor_fqp2n40... · 2016-02-14 · ID = 0.9 A TO-220...

October 2013

FQP2N40N-Channel QFET® MOSFET400 V, 1.8 A, 5.8 Ω

Description

FQP2N

40 — N

-Channel Q

FET® M

OSFET

©2000 Fairchild Semiconductor Corporation FQP2N40 Rev. C0

www.fairchildsemi.com1

Features

Absolute Maximum Ratings TC = 25oC unless otherwise noted.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

1.8 A, 400 V, RDS(on) = 5.8 Ω (Max.) @ VGS = 10 V, ID = 0.9 A

TO-220GDS

G

S

D

Low Gate Charge (Typ. 4.0 nC) Low Crss (Typ. 3.0 pF) Fast Switching 100% Avalanche Tested Improved dv/dt Capability

FQP2N40_F080

* * ()) *

4 0,6-71 % & '

0,%))71 % %( '

4 8 9 6 '

* :* ±2) *

; 8'!; &- <

4 '! % & '

; +!'!; ( ) <

!5 8=+!!5 ( - *5

8 80,6-71 () >

"!6-7 ) 26 >57

+ --?%-) 7

@

%5& -2)) 7

+θ Thermal Resistance, Junction-to-Case, Max. 2 %2 7>

+θ Thermal Resistance, Case-to-Sink, Typ. 0.5 7>

+θ Thermal Resistance, Junction-to-Ambient, Max. A6 - 7>

FQP2N40_F080

Package Marking and Ordering InformationPart Number Top Mark Package Reel Size Tape Width Quantity

FQP2N40FQP2N40_F080 TO-220 N/A N/A 50 units

FQP2N

40 — N

-Channel Q

FET® M

OSFET



1. Repetitive rating : pulse-width limited by maximum junction temperature.2. L = 45 mH, IAS = 1.8 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC.3. ISD ≤ 1.8 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.4. Essentially independent of operating temperature.

Packing MethodTube

Electrical Characteristics TC = 25oC unless otherwise noted.

VDS = 320 V, ID = 1.8 A,VGS = 10 V

B* B=* *,)*4,6-)µ' ()) *

∆B*

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B=*

4,6-)µ'+6-7 ) ( *57

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+

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F : % %

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F +!+! ) ( µ

FQP2N

40 — N

-Channel Q

FET® M

OSFET



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Ω

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FQP2N

40 — N

-Channel Q

FET® M

OSFET



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Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

VGS

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

EAS = L IAS2----

21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

EAS = L IAS2----

21EAS = L IAS

2----21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p

VGSVGS

IG = const.



FQP2N

40 — N

-Channel Q

FET® M

OSFET

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------D =Gate Pulse WidthGate Pulse Period

--------------------------

FQP2N

40 — N

-Channel Q

FET® M

OSFET





FQP2N

40 — N

-Channel Q

FET® M

OSFET

Mechanical Dimensions

Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003



TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

Fairchild®

Fairchild Semiconductor®FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™FPS™

F-PFS™FRFET®

Global Power ResourceSM

GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®

OPTOPLANAR®

PowerTrench®

PowerXS™Programmable Active Droop™QFET®

QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®

STEALTH™SuperFET®

SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®

SyncFET™

Sync-Lock™®*

TinyBoost®TinyBuck®

TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I66

tm

®

FQP2N

40 — N

-Channel Q

FET® M

OSFET

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor:

FQP2N40

http://www.mouser.com/Fairchild-Semiconductor

http://www.mouser.com/access/?pn=FQP2N40

N-Channel QFET MOSFET N- Description semiconductor_fqp2n40... · 2016-02-14 · ID = 0.9 A TO-220...

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Transcript of N-Channel QFET MOSFET N- Description semiconductor_fqp2n40... · 2016-02-14 · ID = 0.9 A TO-220...