N-channel 650 V, 35 A, 0.067 typ., MDmesh V Power … · This is information on a product in full...

This is information on a product in full production.

May 2014 DocID024049 Rev 2 1/18

STFW45N65M5, STW45N65M5, STWA45N65M5

N-channel 650 V, 35 A, 0.067 Ω typ., MDmesh™ V Power MOSFETs

in TO-3PF, TO-247 and TO-247 long leads packages

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Worldwide best RDS(on)

* area

• Higher VDSS

rating and high dv/dt capability

• Excellent switching performance

• 100% avalanche tested

Applications• Switching applications

DescriptionThese devices are N-channel MDmesh™ V

Power MOSFETs based on an innovative

proprietary vertical process technology, which is

combined with STMicroelectronics’ well-known

PowerMESH™ horizontal layout structure. The

resulting product has extremely low on-

resistance, which is unmatched among silicon-

based Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.

TO-2471

2

3

TO-247 long leads

111

123

TO-3PF

Order codes VDS @ TJmax RDS(on) max ID

STFW45N65M5

710 V 0.078 Ω 35 ASTW45N65M5

STWA45N65M5

Table 1. Device summary

Order codes Marking Package Packaging

STFW45N65M5

45N65M5

TO-3PF

TubeSTW45N65M5 TO-247

STWA45N65M5 TO-247 long leads

www.st.com

http://www.st.com

Contents STFW45N65M5, STW45N65M5, STWA45N65M5

2/18 DocID024049 Rev 2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1 TO-3PF, STFW45N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.2 TO-247, STW45N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3 TO-247 long leads, STWA45N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

DocID024049 Rev 2 3/18

STFW45N65M5, STW45N65M5, STWA45N65M5 Electrical ratings

18

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter

Value

UnitTO-3PF

TO-247,

TO-247 long leads

VGS

Gate-source voltage ± 25 V

ID

Drain current (continuous) at TC

= 25 °C 35 A

ID

Drain current (continuous) at TC

= 100 °C 22 A

IDM

(1)

1. Limited by maximum junction temperature

Drain current (pulsed) 140 A

PTOT

Total dissipation at TC

= 25 °C 57 210 W

dv/dt (2)

2. ISD

≤ 35 A, di/dt ≤ 400 A/μs, VDS(Peak)

< V(BR)DSS

, VDD

= 400 V

Peak diode recovery voltage slope 15 V/ns

dv/dt (3)

3. VDS

< 520 V

MOSFET dv/dt ruggedness 50 V/ns

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1 s; Tc=25°C)

3500 V

Tstg

Storage temperature - 55 to 150 °C

Tj

Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter

Value

UnitTO-3PF

TO-247, TO-247 long leads

Rthj-case

Thermal resistance junction-case max 2.2 0.6 °C/W

Rthj-amb

Thermal resistance junction-ambient max 50 50 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax

)

9 A

EAS

Single pulse avalanche energy (starting tj=25°C,

Id= I

AR; V

dd=50)

810 mJ

Electrical characteristics STFW45N65M5, STW45N65M5, STWA45N65M5

4/18 DocID024049 Rev 2

2 Electrical characteristics

(TC

= 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID

= 1 mA, VGS

= 0 650 V

IDSS

Zero gate voltage

drain current (VGS

= 0)

VDS

= 650 V 1 μA

VDS

= 650 V, TC

=125 °C 100 μA

IGSS

Gate-body leakage

current (VDS

= 0)

VGS

= ± 25 V ± 100 nA

VGS(th)

Gate threshold voltage VDS

= VGS

, ID

= 250 μA 3 4 5 V

RDS(on)

Static drain-source

on-resistance

VGS

= 10 V, ID

= 17.5 A 0.067 0.078 Ω

Table 6. Dynamic


Ciss

Input capacitance

VDS

= 100 V, f = 1 MHz,

VGS

= 0

- 3470 - pF

Coss Output capacitance - 82 - pF

Crss

Reverse transfer

capacitance- 7 - pF

Co(tr)

(1)

1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when

VDS

increases from 0 to 80% VDSS

Equivalent

capacitance time

related

VDS

= 0 to 520 V, VGS

= 0

- 280 - pF

Co(er)

(2)

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS

increases from 0 to 80% VDSS

Equivalent

capacitance energy

related

- 79 - pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain - 2 - Ω

Qg

Total gate chargeV

DD = 520 V, I

D = 17.5 A,

VGS

= 10 V

(see Figure 18)

- 82 - nC

Qgs

Gate-source charge - 18.5 - nC

Qgd

Gate-drain charge - 35 - nC

DocID024049 Rev 2 5/18

STFW45N65M5, STW45N65M5, STWA45N65M5 Electrical characteristics

18

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max Unit

td (v) Voltage delay time

VDD

= 400 V, ID

= 23 A,

RG

= 4.7 Ω, VGS

= 10 V

(see Figure 19 and

Figure 22)

- 79.5 - ns

tr (v) Voltage rise time - 11 - ns

tf (i) Current fall time - 9.3 - ns

tc(off) Crossing time - 16 - ns

Table 8. Source drain diode


ISD

Source-drain current - 35 A

ISDM

(1)

1. Pulse width limited by safe operating area.

Source-drain current (pulsed) - 140 A

VSD

(2)

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage ISD

= 35 A, VGS

= 0 - 1.5 V

trr

Reverse recovery time

ISD

= 35 A, di/dt = 100 A/μs

VDD

= 100 V (see Figure 19)

- 392 ns

Qrr

Reverse recovery charge - 7.4 μC

IRRM

Reverse recovery current - 38 A

trr

Reverse recovery timeISD

= 35 A, di/dt = 100 A/μs

VDD

= 100 V, Tj = 150 °C

(see Figure 19)

- 468 ns

Qrr

Reverse recovery charge - 9.7 μC

IRRM

Reverse recovery current - 42 A


6/18 DocID024049 Rev 2

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-3PF Figure 3. Thermal impedance for TO-3PF

Single pulse

δ=0.5

0.05

0.02

0.01

0.1

0.2

K

10 tp(s)-4 10-310-3

10-2

10-5 10-2 10-1 100

c

10-1

101

GIPG040420141142SA

Figure 4. Safe operating area for TO-247 and TO-247LL

Figure 5. Thermal impedance for TO-247 and TO-247LL

Figure 6. Output characteristics Figure 7. Transfer characteristics

ID

100

10

1

0.10.1 1 100 VDS(V)10

(A)

Opera

tion

in th

is ar

ea is

Limite

d by

max

RDS(o

n)

10µs

100µs

1ms

10ms

Tj=150°C

Tc=25°CSingle pulse

AM13079v1

ID

60

40

20

00 10 VDS(V)20

(A)

5 15

80

6V

VGS= 9, 10V

10

30

50

707V

90 8V

AM13080v1ID

60

40

20

03 5 VGS(V)7

(A)

4 6 8

80

9

10

30

50

70

VDS=25V90

AM13081v1

DocID024049 Rev 2 7/18

STFW45N65M5, STW45N65M5, STWA45N65M5 Electrical characteristics

18

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance

Figure 10. Capacitance variations Figure 11. Output capacitance stored energy

Figure 12. Normalized gate threshold voltage vs. temperature

Figure 13. Normalized on-resistance vs. temperature

VGS

6

4

2

00 20 Qg(nC)

(V)

80

8

40 60

10

VDD=520VID=17.5A

100

12

300

200

100

0

400

500

VDS

VDS(V)

AM13082v1RDS(on)

0.067

0.065

0.063

0.0610 15 ID(A)

(Ω)

10 20

0.069

0.071

VGS=10V

255

AM13083v1

C

1000

100

10

10.1 10 VDS(V)

(pF)

1

10000

100

Ciss

Coss

Crss

AM13084v1Eoss

6

4

2

00 100 VDS(V)

(µJ)

400

8

200 300

10

12

500 600

14

16

AM13085v1

VGS(th)

1.00

0.90

0.80

0.70-50 0 TJ(°C)

(norm)

-25

1.10

7525 50 100

ID=250µA

AM05459v2 RDS(on)

1.7

1.3

0.9

0.5-50 0 TJ(°C)

(norm)

-25 7525 50 100

0.7

1.1

1.5

1.9

2.1VGS=10VID=17.5V

AM05460v2


8/18 DocID024049 Rev 2

Figure 14. Drain-source diode forward characteristics

Figure 15. Normalized V(BR)DSS vs. temperature

Figure 16. Switching losses vs. gate resistance (1)

1. Eon including reverse recovery of a SiC diode

VSD

0 20 ISD(A)

(V)

10 5030 400

0.2

0.4

0.6

0.8

1.0

1.2

TJ=-50°C

TJ=150°C

TJ=25°C

AM05461v1 V(BR)DSS

-50 0 TJ(°C)

(norm)

-25 7525 50 1000.92

0.94

0.96

0.98

1.00

1.04

1.06

1.02

ID = 1mA1.08

AM10399v1

E

300

200

100

00 20 RG(Ω)

(μJ)

10 30

400

500

600

40

ID=23AVDD=400V

Eon

Eoff

VGS=10V

AM13086v1

DocID024049 Rev 2 9/18

STFW45N65M5, STW45N65M5, STWA45N65M5 Test circuits

18

3 Test circuits

Figure 17. Switching times test circuit for resistive load

Figure 18. Gate charge test circuit

Figure 19. Test circuit for inductive load switching and diode recovery times

Figure 20. Unclamped inductive load test circuit

Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM05540v2

Id

Vgs

Vds

90%Vds

10%Id

90%Vgs on

Tdelay-off

TfallTrise

Tcross -over

10%Vds

90%Id

Vgs(I(t))

on

-off

TfallTrise

-

))

Concept waveform for Inductive Load Turn-off

Package mechanical data STFW45N65M5, STW45N65M5, STWA45N65M5

10/18 DocID024049 Rev 2

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK is an ST trademark.

http://www.st.com

DocID024049 Rev 2 11/18

STFW45N65M5, STW45N65M5, STWA45N65M5 Package mechanical data

18

4.1 TO-3PF, STFW45N65M5

Figure 23. TO-3PF drawing

7627132_D


12/18 DocID024049 Rev 2

Table 9. TO-3PF mechanical data

Dim.mm

Min. Typ. Max.

A 5.30 5.70

C 2.80 3.20

D 3.10 3.50

D1 1.80 2.20

E 0.80 1.10

F 0.65 0.95

F2 1.80 2.20

G 10.30 11.50

G1 5.45

H 15.30 15.70

L 9.80 10 10.20

L2 22.80 23.20

L3 26.30 26.70

L4 43.20 44.40

L5 4.30 4.70

L6 24.30 24.70

L7 14.60 15

N 1.80 2.20

R 3.80 4.20

∅ 3.40 3.80

DocID024049 Rev 2 13/18


18

4.2 TO-247, STW45N65M5

Figure 24. TO-247 drawing

0075325_G


14/18 DocID024049 Rev 2

Table 10. TO-247 mechanical data

Dim.mm.

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

∅P 3.55 3.65

∅R 4.50 5.50

S 5.30 5.50 5.70

DocID024049 Rev 2 15/18


18

4.3 TO-247 long leads, STWA45N65M5

Figure 25. TO-247 long leads drawing

7395426_G


16/18 DocID024049 Rev 2

Table 11. TO-247 long leads mechanical data

Dim.mm

Min. Typ. Max.

A 4.90 5.15

D 1.85 2.10

E 0.55 0.67

F 1.07 1.32

F1 1.90 2.38

F2 2.87 3.38

G 10.90 BSC

H 15.77 16.02

L 20.82 21.07

L1 4.16 4.47

L2 5.49 5.74

L3 20.05 20.30

L4 3.68 3.93

L5 6.04 6.29

M 2.25 2.55

V 10°

V1 3°

V3 20°

Dia. 3.55 3.66

DocID024049 Rev 2 17/18

STFW45N65M5, STW45N65M5, STWA45N65M5 Revision history

18

5 Revision history

2

Table 12. Document revision history

Date Revision Changes

11-Dec-2012 1 First release.

09-May-2014 2

– Added: TO-3PF package

– Added: dv/dt (MOSFET dv/dt ruggedness) parameter and VISO

– Modified: Figure 6 and 7

– Minor text changes

STFW45N65M5, STW45N65M5, STWA45N65M5

18/18 DocID024049 Rev 2

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N-channel 650 V, 35 A, 0.067 typ., MDmesh V Power … · This is information on a product in full...

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