N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c...

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February 2011 Doc ID 15322 Rev 3 1/14 14 STW77N65M5 N-channel 650 V, 0.033 , 69 A, MDmesh™ V Power MOSFET TO-247 Features Higher V DSS rating Higher dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested Application Switching applications Description This device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram Order code V DSS @T jmax. R DS(on) max. I D STW77N65M5 710 V < 0.038 69 A TO-247 1 2 3 Table 1. Device summary Order code Marking Package Packaging STW77N65M5 77N65M5 TO-247 Tube www.st.com

Transcript of N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c...

Page 1: N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50

February 2011 Doc ID 15322 Rev 3 1/14

14

STW77N65M5N-channel 650 V, 0.033 Ω, 69 A, MDmesh™ V Power MOSFET

TO-247

Features

Higher VDSS rating

Higher dv/dt capability

Excellent switching performance

Easy to drive

100% avalanche tested

ApplicationSwitching applications

DescriptionThis device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Figure 1. Internal schematic diagram

Order codeVDSS

@Tjmax.RDS(on) max. ID

STW77N65M5 710 V < 0.038 Ω 69 A

TO-247

12

3

Table 1. Device summary

Order code Marking Package Packaging

STW77N65M5 77N65M5 TO-247 Tube

www.st.com

Page 2: N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50

Contents STW77N65M5

2/14 Doc ID 15322 Rev 3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Page 3: N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50

STW77N65M5 Electrical ratings

Doc ID 15322 Rev 3 3/14

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate- source voltage 25 V

ID Drain current (continuous) at TC = 25 °C 69 A

ID Drain current (continuous) at TC = 100 °C 41.5 A

IDM (1)

1. Pulse width limited by safe operating area

Drain current (pulsed) 276 A

PTOT Total dissipation at TC = 25 °C 400 W

IARMax current during repetitive or single pulse avalanche (pulse width limited by TJMAX)

15 A

EASSingle pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)2000 mJ

dv/dt (2)

2. ISD ≤ 69 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS, VDD = 400 V

Peak diode recovery voltage slope 15 V/ns

Tstg Storage temperature - 55 to 150 °C

Tj Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 0.31 °C/W

Rthj-amb Thermal resistance junction-ambient max 50 °C/W

Tl Maximum lead temperature for soldering purpose 300 °C

Page 4: N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50

Electrical characteristics STW77N65M5

4/14 Doc ID 15322 Rev 3

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown voltage

ID = 1 mA, VGS = 0 650 V

IDSSZero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

1

100

µA

µA

IGSSGate-body leakage

current (VDS = 0)VGS = ± 25 V 100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

RDS(on)Static drain-source on resistance

VGS = 10 V, ID = 34.5 A 0.033 0.038 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0-

9800

2006

-

pF

pFpF

Co(tr)(1)

1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Equivalent capacitance time related

VGS = 0, VDS = 0 to 520 V - 590 - pF

Co(er)(2)

2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

Equivalent capacitance energy related

VGS = 0, VDS = 0 to 520 V - 194 - pF

RGIntrinsic gate resistance

f = 1 MHz open drain - 1.2 - Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source chargeGate-drain charge

VDD = 520 V, ID = 34.5 A,

VGS = 10 V(see Figure 16)

-

185

4565

-

nC

nCnC

Page 5: N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50

STW77N65M5 Electrical characteristics

Doc ID 15322 Rev 3 5/14

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(V)

tr(V)

tf(i)tc(off)

Voltage delay time

Voltage rise timeCurrent fall time

Crossing time

VDD = 400 V, ID = 40 A,

RG = 4.7 Ω, VGS = 10 V(see Figure 17)

(see Figure 20)

-

160

2220

40

-

ns

nsns

ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD

ISDM (1)

1. Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)-

69

276

A

A

VSD (2)

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage ISD = 69 A, VGS = 0 - 1.5 V

trrQrr

IRRM

Reverse recovery timeReverse recovery charge

Reverse recovery current

ISD = 69 A, di/dt = 100 A/µsVDD = 100 V (see Figure 17)

-57014

48

nsµC

A

trrQrr

IRRM

Reverse recovery time

Reverse recovery chargeReverse recovery current

ISD = 69 A, di/dt = 100 A/µsVDD = 100 V, Tj = 150 °C

(see Figure 17)

-

700

2058

ns

µCA

Page 6: N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50

Electrical characteristics STW77N65M5

6/14 Doc ID 15322 Rev 3

2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance

ID

100

10

1

0.10.1 1 100 VDS(V)10

(A)

Opera

tion

in th

is ar

ea is

Limite

d by

max

RDS(o

n)

10µs

100µs

1ms

10msTj=150°CTc=25°C

Singlepulse

AM04964v1

ID

60

40

20

00 10 VDS(V)20

(A)

5 15 25

80

100

5V

6V

7V

VGS=10V

120

140

30

AM04965v1 ID

60

40

20

00 4 VGS(V)8

(A)

2 6 10

80

100

120

140VDS=25V

AM04966v1

VGS

6

4

2

00 50 Qg(nC)

(V)

200

8

100 150

10

VDD=520V

ID=34.5A12

300

200

100

0

400

500VDS VGS

AM04969v1RDS(on)

0.025

0.020

0.015

0.010 20 ID(A)

(Ω)

10 30

0.030

0.035

VGS=10V

5040 60

AM04968v1

Page 7: N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50

STW77N65M5 Electrical characteristics

Doc ID 15322 Rev 3 7/14

Figure 8. Capacitance variations Figure 9. Output capacitance stored energy

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized on resistance vs temperature

Figure 12. Source-drain diode forward characteristics

Figure 13. Normalized BVDSS vs temperature

C

1000

100

10

10.1 10 VDS(V)

(pF)

1

10000

100

Ciss

Coss

Crss

100000

AM04970v1 Eoss

15

10

5

00 100 VDS(V)

(µJ)

400

20

200 300

25

30

500 600

35

40

AM04971v1

VGS(th)

1.00

0.90

0.80

0.70-50 0 TJ(°C)

(norm)

-25

1.10

7525 50 100

AM04972v1 RDS(on)

1.7

1.5

0.9

0.5-50 0 TJ(°C)

(norm)

-25 7525 50 100

0.7

1.1

1.3

1.9

2.1

125

ID= 34.5 A

VGS= 10 V

AM05501v1

VSD

0 20 ISD(A)

(V)

10 5030 400

0.2

0.4

0.6

0.8

1.0

1.2TJ=-50°C

TJ=150°C

TJ=25°C

AM04974v1 BVDSS

-50 0 TJ(°C)

(norm)

-25 7525 50 1000.93

0.95

0.97

0.99

1.01

1.05

1.07

1.03

ID = 1mA

AM04967v1

Page 8: N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50

Electrical characteristics STW77N65M5

8/14 Doc ID 15322 Rev 3

Figure 14. Switching losses vs gate resistance(1)

1. Eon including reverse recovery of a SiC diode

E

600

400

200

00 20 RG(Ω)

(µJ)

10 30

800

1000

1200

40

ID=40A

VDD=400V

Eon

Eoff

1400

1600VGS=10VTJ=25°C

AM04973v1

Page 9: N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50

STW77N65M5 Test circuits

Doc ID 15322 Rev 3 9/14

3 Test circuits

Figure 15. Switching times test circuit for resistive load

Figure 16. Gate charge test circuit

Figure 17. Test circuit for inductive load switching and diode recovery times

Figure 18. Unclamped inductive load test circuit

Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

µF3.3µF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200µF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100µH

µF3.3 1000

µF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200µF

3.3µF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

Page 10: N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50

Package mechanical data STW77N65M5

10/14 Doc ID 15322 Rev 3

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Page 11: N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50

STW77N65M5 Package mechanical data

Doc ID 15322 Rev 3 11/14

Table 8. TO-247 mechanical data

Dim.mm

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.45

L 14.20 14.80

L1 3.70 4.30

L2 18.50

∅P 3.55 3.65

∅R 4.50 5.50

S 5.50

Page 12: N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50

Package mechanical data STW77N65M5

12/14 Doc ID 15322 Rev 3

Figure 21. TO-247 drawing

0075325_F

Page 13: N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50

STW77N65M5 Revision history

Doc ID 15322 Rev 3 13/14

5 Revision history

Table 9. Document revision history

Date Revision Changes

20-Jan-2009 1 First release.

14-Jul-2009 2 Document status promoted from preliminary data to datasheet.

03-Feb-2011 3 Section 2.1: Electrical characteristics (curves) has been updated.

Page 14: N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFET TO-247 · b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50

STW77N65M5

14/14 Doc ID 15322 Rev 3

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