N-channel 650 V, 0.024 typ., 84 A, MDmesh V Power ......This is information on a product in full...

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This is information on a product in full production. July 2014 DocID022522 Rev 5 1/16 16 STW88N65M5 STWA88N65M5 N-channel 650 V, 0.024 typ., 84 A, MDmesh™ V Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Figure 1. Internal schematic diagram Features Worldwide best R DS(on) in TO-247 Higher V DSS rating Higher dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested Applications High efficiency switching applications: Servers PV inverters Telecom infrastructure Multi kW battery chargers Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. TO-247 1 2 3 TO-247 long leads Order codes V DSS @T jmax. R DS(on) max. I D STW88N65M5 710 V 0.029 84 A STWA88N65M5 Table 1. Device summary Order codes Marking Packages Packaging STW88N65M5 88N65M5 TO-247 Tube STWA88N65M5 TO-247 long leads www.st.com

Transcript of N-channel 650 V, 0.024 typ., 84 A, MDmesh V Power ......This is information on a product in full...

This is information on a product in full production.

July 2014 DocID022522 Rev 5 1/16

16

STW88N65M5 STWA88N65M5

N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh™ V Power MOSFETs in TO-247 and TO-247 long leads packages

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Worldwide best RDS(on) in TO-247

• Higher VDSS rating

• Higher dv/dt capability

• Excellent switching performance

• Easy to drive

• 100% avalanche tested

Applications• High efficiency switching applications:

– Servers– PV inverters– Telecom infrastructure– Multi kW battery chargers

DescriptionThese devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

TO-247

12

3

TO-247 long leads

Order codesVDSS

@Tjmax.RDS(on) max. ID

STW88N65M5710 V 0.029 Ω 84 A

STWA88N65M5

Table 1. Device summary

Order codes Marking Packages Packaging

STW88N65M588N65M5

TO-247Tube

STWA88N65M5 TO-247 long leads

www.st.com

Contents STW88N65M5, STWA88N65M5

2/16 DocID022522 Rev 5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

DocID022522 Rev 5 3/16

STW88N65M5, STWA88N65M5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate- source voltage ±25 V

ID Drain current (continuous) at TC = 25 °C 84 A

ID Drain current (continuous) at TC = 100 °C 50.5 A

IDM (1)

1. Pulse width limited by safe operating area

Drain current (pulsed) 336 A

PTOT Total dissipation at TC = 25 °C 450 W

IARMax current during repetitive or single pulse avalanche (pulse width limited by TJMAX)

15 A

EASSingle pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)2000 mJ

dv/dt (2)

2. ISD ≤ 84 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS, VDD = 400 V

Peak diode recovery voltage slope 15 V/ns

Tstg Storage temperature - 55 to 150 °C

Tj Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 0.28 °C/W

Rthj-amb Thermal resistance junction-ambient max 50 °C/W

Electrical characteristics STW88N65M5, STWA88N65M5

4/16 DocID022522 Rev 5

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown voltage

VGS = 0, ID = 1 mA 650 V

IDSSZero gate voltage

drain current

VGS = 0, VDS = 650 V 1 µA

VGS = 0, VDS = 650 V, TC=125 °C

100 µA

IGSSGate-body leakagecurrent

VDS = 0, VGS = ± 25 V ± 100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

RDS(on)Static drain-source on- resistance

VGS = 10 V, ID = 42 A 0.024 0.029 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VGS = 0, VDS = 100 V, f = 1 MHz

- 8825 - pF

Coss Output capacitance - 223 - pF

CrssReverse transfer capacitance

- 11 - pF

Co(tr)(1)

1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Equivalent capacitance time related

VGS = 0, VDS = 0 to 520 V - 778 - pF

Co(er)(2)

2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

Equivalent capacitance energy related

VGS = 0, VDS = 0 to 520 V - 202 - pF

RGIntrinsic gate resistance

f = 1 MHz open drain - 1.79 - Ω

Qg Total gate charge VDD = 520 V, ID = 42 A,VGS = 10 V(see Figure 16)

- 204 - nC

Qgs Gate-source charge - 51 - nC

Qgd Gate-drain charge - 84 - nC

DocID022522 Rev 5 5/16

STW88N65M5, STWA88N65M5 Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(V) Voltage delay timeVDD = 400 V, ID = 56 A,

RG = 4.7 Ω, VGS = 10 V(see Figure 17)(see Figure 20)

- 141 - ns

tr(V) Voltage rise time - 16 - ns

tf(i) Current fall time - 29 - ns

tc(off) Crossing time - 56 - ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current- 84 A

ISDM (1)

1. Pulse width limited by safe operating area

Source-drain current (pulsed) - 336 A

VSD (2)

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage ISD = 84 A, VGS = 0 - 1.5 V

trr Reverse recovery time ISD = 84 A, di/dt = 100 A/µsVDD = 100 V (see Figure 17)

- 544 ns

Qrr Reverse recovery charge - 14 µC

IRRM Reverse recovery current - 50 A

trr Reverse recovery time ISD = 84 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C(see Figure 17)

- 660 ns

Qrr Reverse recovery charge - 20 µC

IRRM Reverse recovery current - 60 A

Electrical characteristics STW88N65M5, STWA88N65M5

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2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance

ID

100

10

1

0.10.1 1 100 VDS(V)10

(A)

Opera

tion

in th

is ar

ea is

Limite

d by

max

RDS(o

n)

10µs

100µs

1ms

10ms

Tj=150°CTc=25°CSingle pulse

AM10392v1

ID

50

00 10 VDS(V)20

(A)

5 15 25

100

8V

6V

7V

VGS=9, 10V

150

200

250

AM10393v1ID

75

50

25

03 5 VGS(V)7

(A)

4 6

100

125

150

175

VDS=30V

8 9

200

225

250

AM10394v1

VGS

6

4

2

00 50 Qg(nC)

(V)

200

8

100 150

10

VDD=520VID=42A

12

300

200

100

0

400

500VDS

VDS (V)

14

AM10395v1RDS(on)

0.026

0.024

0.022

0.0200 20 ID(A)

(Ω)

10 30

VGS=10V

5040 60 70 80

AM10396v1

DocID022522 Rev 5 7/16

STW88N65M5, STWA88N65M5 Electrical characteristics

Figure 8. Capacitance variations Figure 9. Output capacitance stored energy

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized on-resistance vs temperature

Figure 12. Source-drain diode forward characteristics

Figure 13. Normalized V(BR)DSS vs temperature

C

1000

100

10

10.1 10 VDS(V)

(pF)

1

10000

100

Ciss

Coss

Crss

100000

AM10397v1 Eoss

15

10

5

00 100 VDS(V)

(µJ)

400

20

200 300

25

30

500 600

35

40

AM10398v1

VGS(th)

1.00

0.90

0.80

0.70-50 0 TJ(°C)

(norm)

-25

1.10

7525 50 100

ID=250µA

AM04972v1 RDS(on)

1.7

1.5

0.9

0.5-50 0 TJ(°C)

(norm)

-25 7525 50 100

0.7

1.1

1.3

1.9

2.1

125

ID= 42 A

VGS= 10 V

AM05501v2

VSD

0 20 ISD(A)

(V)

10 5030 400

0.2

0.4

0.6

0.8

1.0

1.2TJ=-50°C

TJ=150°C

TJ=25°C

AM04974v1 V(BR)DSS

-50 0 TJ(°C)

(norm)

-25 7525 50 1000.92

0.94

0.96

0.98

1.00

1.04

1.06

1.02

ID = 1mA1.08

AM10399v1

Electrical characteristics STW88N65M5, STWA88N65M5

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Figure 14. Switching losses vs gate resistance (1)

1. Eon including reverse recovery of a SiC diode

E

00 20 RG(Ω)

(μJ)

10 30

1000

2000

40

ID=56A

VDD=400V Eon

Eoff

3000

VGS=10VTJ=25°C

AM11171v1

DocID022522 Rev 5 9/16

STW88N65M5, STWA88N65M5 Test circuits

3 Test circuits

Figure 15. Switching times test circuit for resistive load

Figure 16. Gate charge test circuit

Figure 17. Test circuit for inductive load switching and diode recovery times

Figure 18. Unclamped inductive load test circuit

Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

Package mechanical data STW88N65M5, STWA88N65M5

10/16 DocID022522 Rev 5

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

DocID022522 Rev 5 11/16

STW88N65M5, STWA88N65M5 Package mechanical data

Figure 21. TO-247 drawing

0075325_G

Package mechanical data STW88N65M5, STWA88N65M5

12/16 DocID022522 Rev 5

Table 8. TO-247 mechanical data

Dim.mm.

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

∅P 3.55 3.65

∅R 4.50 5.50

S 5.30 5.50 5.70

DocID022522 Rev 5 13/16

STW88N65M5, STWA88N65M5 Package mechanical data

Figure 22. TO-247 long leads drawing

7395426_G

Package mechanical data STW88N65M5, STWA88N65M5

14/16 DocID022522 Rev 5

Table 9. TO-247 long leads mechanical data

Dim.mm

Min. Typ. Max.

A 4.90 5.15

D 1.85 2.10

E 0.55 0.67

F 1.07 1.32

F1 1.90 2.38

F2 2.87 3.38

G 10.90 BSC

H 15.77 16.02

L 20.82 21.07

L1 4.16 4.47

L2 5.49 5.74

L3 20.05 20.30

L4 3.68 3.93

L5 6.04 6.29

M 2.25 2.55

V 10°

V1 3°

V3 20°

Dia. 3.55 3.66

DocID022522 Rev 5 15/16

STW88N65M5, STWA88N65M5 Revision history

5 Revision history

Table 10. Document revision history

Date Revision Changes

23-Nov-2011 1 First release.

09-Dec-2011 2 Document status promoted from preliminary data to datasheet.

12-Jun-2012 3 Updated title on the cover page.

30-Nov-2012 4Added new part number: STWA88N65M5Updated: Section 4: Package mechanical data

16-Jul-2014 5– Updated: Figure 4 and 5– Minor text changes

STW88N65M5, STWA88N65M5

16/16 DocID022522 Rev 5

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