This is information on a product in full production.

February 2015 DocID025255 Rev 3 1/15

STF28N60M2, STFI28N60M2

N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in TO-220FP and I2PAKFP packages

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Excellent output capacitance (Coss) profile

• 100% avalanche tested

• Zener-protected

Applications• Switching applications

• LCC converters, resonant converters

DescriptionThese devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

TO-220FP

12

3

I PAKFP (TO-281)2

1 23

AM15572v1

Order code VDS @ TJmax RDS(on) max ID

STF28N60M2650 V 0.150 Ω 22 A

STFI28N60M2

Table 1. Device summary

Order code Marking Package Packaging

STF28N60M228N60M2

TO-220FPTube

STFI28N60M2 I2PAKFP (TO-281)

www.st.com

Contents STF28N60M2, STFI28N60M2

2/15 DocID025255 Rev 3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.2 I2PAK (TO-281) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

DocID025255 Rev 3 3/15

STF28N60M2, STFI28N60M2 Electrical ratings

15

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate-source voltage ± 25 V

ID Drain current (continuous) at TC = 25 °C 22(1)

1. Limited by maximum junction temperature.

A

ID Drain current (continuous) at TC = 100 °C 14(1) A

IDM (2)

2. Pulse width limited by safe operating area.

Drain current (pulsed) 88(1) A

PTOT Total dissipation at TC = 25 °C 30 W

dv/dt (3)

3. ISD ≤ 22 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD= 400 V.

Peak diode recovery voltage slope 15 V/ns

dv/dt(4)

4. VDS ≤ 480 V

MOSFET dv/dt ruggedness 50 V/ns

VISO

Insulation withstand voltage (RMS) from all three leads to external heat sink

(t = 1 s; TC = 25 °C)2500 V

Tstg Storage temperature- 55 to 150 °C

Tj Operating junction temperature

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 4.17 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

IARAvalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

3.6 A

EASSingle pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50V)

350 mJ

Electrical characteristics STF28N60M2, STFI28N60M2

4/15 DocID025255 Rev 3

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown voltage

ID = 1 mA, VGS = 0 600 V

IDSSZero gate voltage drain current (VGS = 0)

VDS = 600 V 1 µA

VDS = 600 V, TC=125 °C 100 µA

IGSSGate-body leakage

current (VDS = 0)VGS = ± 25 V ±10 µA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V

RDS(on)Static drain-source on-resistance

VGS = 10 V, ID = 11 A 0.135 0.150 Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0

- 1440 - pF

Coss Output capacitance - 70 - pF

CrssReverse transfer capacitance

- 2 - pF

Coss eq.(1)

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS

Equivalent output capacitance

VDS = 0 to 480 V, VGS = 0 - 104 - pF

RGIntrinsic gate resistance

f = 1 MHz open drain - 5.5 - Ω

Qg Total gate charge VDD = 480 V, ID = 22 A,

VGS = 10 V(see Figure 15)

- 36 - nC

Qgs Gate-source charge - 7.2 - nC

Qgd Gate-drain charge - 16 - nC

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 300 V, ID = 11 A, RG = 4.7 Ω, VGS = 10 V

(see Figure 14 and Figure 19)

- 14.5 - ns

tr Rise time - 7.2 - ns

td(off) Turn-off delay time - 100 - ns

tf Fall time - 8 - ns

DocID025255 Rev 3 5/15

STF28N60M2, STFI28N60M2 Electrical characteristics

15

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 22 A

ISDM (1)

1. Pulse width limited by safe operating area.

Source-drain current (pulsed) - 88 A

VSD (2)

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage ISD = 22 A, VGS = 0 - 1.6 V

trr Reverse recovery timeISD = 22 A, di/dt = 100 A/µsVDD = 60 V (see Figure 19)

- 350 ns

Qrr Reverse recovery charge - 4.7 µC

IRRM Reverse recovery current - 27 A

trr Reverse recovery time ISD = 22 A, di/dt = 100 A/µsVDD = 60 V, Tj = 150 °C(see Figure 19)

- 451 ns

Qrr Reverse recovery charge - 6.5 µC

IRRM Reverse recovery current - 29 A

Electrical characteristics STF28N60M2, STFI28N60M2

6/15 DocID025255 Rev 3

2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

ID

1

0.1

0.010.1 1 VDS(V)10

(A)

Opera

tion

in th

is ar

ea is

Limite

d by

max

RDS(o

n)

10µs

1ms

100µs

Tj=150°CTc=25°CSingle pulse

10ms

100

10

AM17988v1

ID

50

30

10

00 5 VDS(V)10

(A)

15

4V

5V

VGS=7, 8, 9, 10V

20

40

20

6V

AM17989v1ID

40

20

00 4 VGS(V)8

(A)

2 6 10

10

30

50VDS=18V

AM17990v1

VGS

6

4

2

00 20 Qg(nC)

(V)

8

30 40

10

VDD=480VID=22A12

300

200

100

0

400

500VDS

10

VDS(V)

AM17991v1RDS(on)

0.134

0.132

0.1300 8 ID(A)

(Ω)

4 12

0.136

VGS=10V

16

0.138

0.140

0.142

20

AM17992v1

DocID025255 Rev 3 7/15

STF28N60M2, STFI28N60M2 Electrical characteristics

15

Figure 8. Capacitance variations Figure 9. Output capacitance stored energy

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized on-resistance vs temperature

Figure 12. Normalized V(BR)DSS vs temperature Figure 13. Source-drain diode forward characteristics

C

1000

100

10

10.1 10 VDS(V)

(pF)

1 100

Ciss

Coss

Crss

10000

AM17993v1 Eoss

4

2

00 100 VDS(V)

(µJ)

400200 300

6

500 600

8

10

AM17994v1

VGS(th)

1.0

0.9

0.8

0.7-50 0 TJ(°C)

(norm)

-25

1.1

7525 50 100

ID=250µA

AM17995v1RDS(on)

1.9

1.3

0.9

0.5-50 0 TJ(°C)

(norm)

-25 7525 50 100

0.7

1.1

1.5

1.7

2.1

2.3

ID=11A

AM17996v1

-50 0 TJ(°C)-25 7525 50 1000.91

0.95

0.99

1.03

ID=1mA

1.07

1.11

AM117997V(BR)DSS VSD

0 4 ISD(A)

(V)

1280

0.2

0.4

0.6

TJ=-50°C

TJ=150°CTJ=25°C

0.8

1

16 20

1.4

1.2

AM17998v1

Test circuits STF28N60M2, STFI28N60M2

8/15 DocID025255 Rev 3

3 Test circuits

Figure 14. Switching times test circuit for resistive load

Figure 15. Gate charge test circuit

Figure 16. Test circuit for inductive load switching and diode recovery times

Figure 17. Unclamped inductive load test circuit

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

DocID025255 Rev 3 9/15

STF28N60M2, STFI28N60M2 Package information

15

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Package information STF28N60M2, STFI28N60M2

10/15 DocID025255 Rev 3

4.1 TO-220FP package information

Figure 20. TO-220FP outline

7012510_Rev_K_B

DocID025255 Rev 3 11/15

STF28N60M2, STFI28N60M2 Package information

15

Table 9. TO-220FP mechanical data

Dim.mm

Min. Typ. Max.

A 4.4 4.6

B 2.5 2.7

D 2.5 2.75

E 0.45 0.7

F 0.75 1

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.2

G1 2.4 2.7

H 10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L5 2.9 3.6

L6 15.9 16.4

L7 9 9.3

Dia 3 3.2

Package information STF28N60M2, STFI28N60M2

12/15 DocID025255 Rev 3

4.2 I2PAK (TO-281) package information

Figure 21. I2PAKFP (TO-281) outline

DocID025255 Rev 3 13/15

STF28N60M2, STFI28N60M2 Package information

15

Table 10. I2PAKFP (TO-281) mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 - 4.60

B 2.50 2.70

D 2.50 2.75

D1 0.65 0.85

E 0.45 0.70

F 0.75 1.00

F1 1.20

G 4.95 5.20

H 10.00 10.40

L1 21.00 23.00

L2 13.20 14.10

L3 10.55 10.85

L4 2.70 3.20

L5 0.85 1.25

L6 7.50 7.60 7.70

Revision history STF28N60M2, STFI28N60M2

14/15 DocID025255 Rev 3

5 Revision history

Table 11. Document revision history

Date Revision Changes

13-Sep-2013 1 First release.

29-Jan-2014 2

– Added: I2PAKFP package– Modified: title, ID value and features in cover page– Modified: ID, IDM and PTOT values in Table 2

– Modified: note 3– Modified: Rthj-case value in Table 3– Modified: the entire typical values in Table 4, 6, 7 and 8

– Modified: RDS(on) typical value– Modified: Figure 7 and 8– Updated: Table 9 and Figure 14

– Added: Section 4: Package information– Minor text changes

13-Feb-2015 3

– Updated title, description and features in cover page.– Updated Table 2.: Absolute maximum ratings and Table 4.:

Avalanche characteristics.– Updated Figure 12.: Normalized V(BR)DSS vs temperature.– Updated 4: Package information.

– Minor text changes.

DocID025255 Rev 3 15/15

STF28N60M2, STFI28N60M2

15

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