N-channel 500 V, 0.73 , 5 A MDmesh II Power MOSFET in TO-220FP · STF8NM50N 8NM50N TO-220FP Tube...

12
November 2011 Doc ID 022505 Rev 2 1/12 12 STF8NM50N N-channel 500 V, 0.73 , 5 A MDmesh™II Power MOSFET in TO-220FP Features 100% avalanche tested Low input capacitances and gate charge Low gate input resistance Applications Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Order codes V DSS @T JMAX R DS(on) max. I D STF8NM50N 550 V < 0.79 5 A 1 2 3 TO-220FP Table 1. Device summary Order codes Marking Packages Packaging STF8NM50N 8NM50N TO-220FP Tube www.st.com

Transcript of N-channel 500 V, 0.73 , 5 A MDmesh II Power MOSFET in TO-220FP · STF8NM50N 8NM50N TO-220FP Tube...

Page 1: N-channel 500 V, 0.73 , 5 A MDmesh II Power MOSFET in TO-220FP · STF8NM50N 8NM50N TO-220FP Tube November 2011 Doc ID 022505 Rev 2 1/12 12 STF8NM50N N-channel 500 V, 0.73 Ω, 5 A

November 2011 Doc ID 022505 Rev 2 1/12

12

STF8NM50NN-channel 500 V, 0.73 Ω, 5 A MDmesh™II Power MOSFET

in TO-220FP

Features

100% avalanche tested

Low input capacitances and gate charge

Low gate input resistance

Applications Switching applications

DescriptionThis device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Figure 1. Internal schematic diagram

Order codes VDSS@TJMAX RDS(on)max. ID

STF8NM50N 550 V < 0.79 Ω 5 A

12

3

TO-220FP

Table 1. Device summary

Order codes Marking Packages Packaging

STF8NM50N 8NM50N TO-220FP Tube

www.st.com

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Contents STF8NM50N

2/12 Doc ID 022505 Rev 2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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STF8NM50N Electrical ratings

Doc ID 022505 Rev 2 3/12

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 500 V

VGS Gate-source voltage ± 25 V

ID Drain current (continuous) at TC = 25 °C 5 (1)

1. Limited by maximum junction temperature.

A

PTOT Total dissipation at TC = 25 °C 20 W

dv/dt (2)

2. ISD ≤ 7 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDS= 80% V(BR)DSS

Peak diode recovery voltage slope 15 V/ns

VISO

Insulation withstand voltage (RMS) from all three leads to external heat sink

(t = 1 s; TC = 25 °C)2500 V

Tstg Storage temperature - 55 to 150 °C

Tj Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 6.25 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W

TlMaximum lead temperature for soldering purpose

300 °C

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

IARAvalanche current, repetitive or not-repetitive (pulse width limited by Tj max)

2 A

EASSingle pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50 V)140 mJ

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Electrical characteristics STF8NM50N

4/12 Doc ID 022505 Rev 2

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown voltage (VGS = 0)

ID = 1 mA 500 V

IDSSZero gate voltage drain current (VGS = 0)

VDS = 500 VVDS = 500 V, TC = 125 °C

1100

µAµA

IGSSGate-body leakagecurrent (VDS = 0)

VGS = ± 25 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V

RDS(on)Static drain-source on resistance

VGS = 10 V, ID = 2.5 A 0.73 0.79 Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitanceOutput capacitance

Reverse transfer capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

-

364

33

1.2

-

pF

pF

pF

Coss(eq)(1)

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS

Equivalent outputcapacitance time related

VDS = 0 to 50 V, VGS = 0 - 147.5 - pF

RGIntrinsic gate resistance

f = 1 MHz open drain - 5.4 - Ω

Qg

Qgs

Qgd

Total gate chargeGate-source charge

Gate-drain charge

VDD = 400 V, ID = 5 A,VGS = 10 V

(see Figure 14)

-143

7

-nCnC

nC

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max Unit

td(on)

trtd(off)

tf

Turn-on delay time

Rise time

Turn-off-delay timeFall time

VDD = 250 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V

(see Figure 13)

-

7

4.4

258.8

-

ns

ns

nsns

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STF8NM50N Electrical characteristics

Doc ID 022505 Rev 2 5/12

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD

ISDM (1)

1. Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)-

5

20

A

A

VSD (2)

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage ISD = 5 A, VGS = 0 - 1.5 V

trrQrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5 A, di/dt = 100 A/µsVDD = 60 V (see Figure 18)

-

187

1.3

14

ns

µC

A

trrQrr

IRRM

Reverse recovery time

Reverse recovery chargeReverse recovery current

ISD = 5 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C(see Figure 18)

-

224

1.513

ns

µCA

Page 6: N-channel 500 V, 0.73 , 5 A MDmesh II Power MOSFET in TO-220FP · STF8NM50N 8NM50N TO-220FP Tube November 2011 Doc ID 022505 Rev 2 1/12 12 STF8NM50N N-channel 500 V, 0.73 Ω, 5 A

Electrical characteristics STF8NM50N

6/12 Doc ID 022505 Rev 2

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Static drain-source on resistance Figure 7. Gate charge vs gate-source voltage

ID

10

1

0.1

0.010.1 1 100 VDS(V)10

(A)

Opera

tion

in th

is ar

ea is

Limite

d by

max

RDS(o

n) 10µs

100µs

1ms10ms

Tj=150°CTc=25°C

Sinlgepulse

AM07917v1

5V

6V

7V

VGS=10V

ID

6

4

2

00 10 VDS(V)20

(A)

30

8

10

AM07917v1ID

6

4

2

00 4 VGS(V)8

(A)

2 6

8

10VDS= 20 V

AM07918v1

RDS(on)

0.72

0.71

0.7

0.690 2 ID(A)

(Ω)

1 3

0.73

0.74

0.75

VGS=10V

4 5

0.76

0.77

AM07919v1

6

4

2

00 5 Qg(nC)

8

10 15

10

VDD=400 V

ID=5 A12

150

100

50

0

200

250

VDS

300

350

400

VGS

(V)

AM03195v1

Page 7: N-channel 500 V, 0.73 , 5 A MDmesh II Power MOSFET in TO-220FP · STF8NM50N 8NM50N TO-220FP Tube November 2011 Doc ID 022505 Rev 2 1/12 12 STF8NM50N N-channel 500 V, 0.73 Ω, 5 A

STF8NM50N Electrical characteristics

Doc ID 022505 Rev 2 7/12

Figure 8. Capacitance variations Figure 9. Output capacitance stored energy

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized on resistance vs temperature

Figure 12. Normalized VDS vs temperature

C

1000

100

10

10 10 VDS(V)

(pF)

1 100

Ciss

Coss

Crss

AM07921v1E

2

1

00 200 VDS(V)

(µJ)

100 300 400 500

AM07922v1

VGS(th)

1.00

0.90

0.80

0.70-50 0 TJ(°C)

(norm)

-25 7525 50 100

ID = 250 µA

AM07923v1 RDS(on)

1.7

1.3

0.9

0.5-50 0 TJ(°C)

(norm)

-25 7525 50 100

2.1ID = 2.5 A

AM07924v1

VDS

-50 0 TJ(°C)

(norm)

-25 7525 50 1000.920.94

0.96

0.98

1.00

1.02

1.04

1.06

ID=1mA

1.08

1.10

AM09028v1

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Test circuits STF8NM50N

8/12 Doc ID 022505 Rev 2

3 Test circuits

Figure 13. Switching times test circuit for resistive load

Figure 14. Gate charge test circuit

Figure 15. Test circuit for inductive load switching and diode recovery times

Figure 16. Unclamped inductive load test circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

µF3.3µF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200µF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100µH

µF3.3 1000

µF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200µF

3.3µF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

Page 9: N-channel 500 V, 0.73 , 5 A MDmesh II Power MOSFET in TO-220FP · STF8NM50N 8NM50N TO-220FP Tube November 2011 Doc ID 022505 Rev 2 1/12 12 STF8NM50N N-channel 500 V, 0.73 Ω, 5 A

STF8NM50N Package mechanical data

Doc ID 022505 Rev 2 9/12

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Page 10: N-channel 500 V, 0.73 , 5 A MDmesh II Power MOSFET in TO-220FP · STF8NM50N 8NM50N TO-220FP Tube November 2011 Doc ID 022505 Rev 2 1/12 12 STF8NM50N N-channel 500 V, 0.73 Ω, 5 A

Package mechanical data STF8NM50N

10/12 Doc ID 022505 Rev 2

Figure 19. TO-220FP drawing

Table 9. TO-220FP mechanical data

Dim.mm

Min. Typ. Max.

A 4.4 4.6

B 2.5 2.7

D 2.5 2.75

E 0.45 0.7

F 0.75 1

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.2

G1 2.4 2.7

H 10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L5 2.9 3.6

L6 15.9 16.4

L7 9 9.3

Dia 3 3.2

7012510_Rev_K

AB

H

Dia

L7

D

E

L6L5

L2

L3

L4

F1 F2

F

G

G1

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STF8NM50N Revision history

Doc ID 022505 Rev 2 11/12

5 Revision history

Table 10. Document revision history

Date Revision Changes

17-Nov-2011 1 First release.

18-Nov-2011 2 Updated dv/dt in Table 2: Absolute maximum ratings.

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STF8NM50N

12/12 Doc ID 022505 Rev 2

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